70908HKIM No. A1053-1/6
STK760-710A-E
Overview
The STK760-710A-E is a power hybrid IC that incorporates active devices including a bridge diode, IGBT, FRD and a
driver circuit necessary for configuring a power factor correction (PFC) circuit in the same package.
Applications
• Power rectification for air conditioners and general-purpose inverters as a single-phase rectification active converter.
Features
• Power devices including a bridge diode, IGBT, and FRD necessary for configuring a PFC circuit are integrated in a single
package.
• Full switching PFC circuit for single-phase 200V/15A can be conf igured.
• Significantly increased flexibility in mounting in end products
Ordering number : EN*A1053A
Thick-Film Hybrid IC
Single-phase Rectification
PFC Hybrid IC
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
sproductsor
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
STK760-710A-E
No. A1053-2/6
Specifications
Absolute maximum ratings at Ta = 25°C, Tc = 25°C otherwise unless specified.
Parameter Symbol Conditions Ratings unit
Collector-to-emitter voltage VCES 600 V
Gate-to-emitter voltage VGES ±20 V
Repetitive peak collector current ICP *1 120 A
Collector current IC 43 A
IGBT
(TR1+TR2)
Allowable power dissipation Pd 83 W
Diode reverse voltage VRM 600 V
Peak one cycle surge current IFSM *2 220 A
I2t value I2t 180 A2s
BD
(D1 to D4)
Forward Current IF 33 A
Peak one cycle surge current IFSM *1 15 A
Forward current IF 8A
FRD
(D5)
Allowable power dissipation Pd 13 W
Peak repetitive reverse voltage VRM 600 V
Peak one cycle surge current IFSM *2 210 A
Forward current IF 33 A
FRD
(D6)
Allowable power dissipation Pd 58 W
Supply voltage (Pin 8) VCC 20 V
Signal pin input voltage (Pin 9) VIN VCC V
Switching frequency fc Under the operating conditions of the
application circuit 25 kHz
Input current (in steady state) IIN(AC) Under the operating conditions of the
application ci rcuit.
Tc=100°C, fc=20kHz 15 Arms
Junction temperature Tj 150 °C
Operating case temperature Tc Center of the resin package on the
reverse side -20 to +100 °C
Storage temperature Tstg -40 to +125 °C
Tightening torque Screw installation part *3 1.0 N • m
Dielectric strength voltage VINS Sine wave, 50Hz, AC 1 minute *4 2000 VRMS
*1. Repetitive peak current with the duty ratio of D=0.1 and tp =1ms.
*2. 50Hz sine wave, non-repetitive one cycle peak current.
*3. The flatness of the heat sink to be connected must be 0.15mm or less.
*4. Test conditions: AC 2500V for 1 second.
Electrical Characteristics at Tc=25°C
Parameter Symbol Conditions min typ max unit
IGBT
Collector-to-emitter cutoff current (TR1+TR2) ICES VCE=600V 200 µA
VGR=15V, IC=20A (Tc=25°C) 1.4 1.9 V
Collector-to-emitter saturation voltage (TR1+TR2) VCE(sat)
VGR=15V, IC=20A (Tc=100°C) 1.55 V
Gate threshold voltage VGE(th) VCE=VGE, IC=430µA 3.75 5.75 µA
Junction-to-case thermal resistance θj-c 1.5 °C/W
D1 to D4
Diode reverse current IR VR=600V 10 µA
Forward voltage VF I
F=20A (10ms Pulse) 1.1 1.5 V
Junction-to-case thermal resistance θj-c 2.9 °C/W
D5
Forward voltage VF I
F=5A (10ms Pulse) 1.2 1.6 V
Junction-to-case thermal resistance θj-c 9 °C/W
Continued on next page.
STK760-710A-E
No. A1053-3/6
Continued from preceding page.
Parameter Symbol Conditions min typ max unit
D6
Diode reverse current IR VR=600V 100 µA
Forward voltage VF IF=20A (10ms Pulse) 1.7 2.1 V
Junction-to-case thermal resistance θj-c 2.15 °C/W
Drive circuit / Output block
VIN(ON) Threshold voltage VIN(ON)th VIN=VCC=VC, IC=430µA 4.1 6.3 V
VIN Leak current (Pin 9) IIN(leak) VIN=0 to 15V, VCC=15V,
VCE=0V 10 µA
tON 110 ns
tOFF
IC=20A, VCC=15V, RCC=22Ω
RB=39Ω, Inductive load 300 1.4 ns
Switching time
trr I
F=20A, di/dt=-100A/µs 40 ns
Package Dimensions
unit:mm (typ)
118
56.0
17 2.54=43.18
2.54
21.59
46.2
(11.4)
2.55.0
11.4
0.6
6.2
3.2
0.5
25.3
25.8
3.4
62.0
50.0
5.5
2.0
2.0
R1.7
STK760-710A-E
No. A1053-4/6
90
20
10
00 2.00.5 1.0 1.5 2.5 3.0
IC - VCE(sat)
Collector-to-Emitter Voltage, VCE - V
Collector Current, IC- A
ITF02483
50
60
80
70
40
30
0 10050 150
Pd - Tc
Cace Temperature, Tc- °C
Allowable Power Dissipation, Pd - W
Cace Temperature, Tc- °C
Allowable Power Dissipation, Pd - W
Cace Temperature, Tc- °C
Allowable Power Dissipation, Pd - W
ITF02486
90
100
20
10
0
50
60
80
70
40
30
90
100
20
10
0
50
60
80
70
40
30
TR1+TR2
Tc=25°C
VG=15V, PW=250µs
TR1+TR2
Ta=25°C
0 10050 150
Pd - Tc
ITF02488
20
10
0
50
60
70
40
30
D5, D6
Ta=25°C
0 10050 150
Pd - Tc
ITF02487
20
10
0
50
60
40
30
D1 to D4
Ta=25°C
D6
D5
D6
D5
20
10
00 2.00.5 1.0 1.5 2.5 3.0
ITF02485
50
60
70
40
30
D5, D6
Tc=25°C
PE=250µs
0 2.00.5 1.0 1.5
IF - VF
Forward Voltage, VF- V
Forward Current, IF- A
Forward Voltage, VF- V
Forward Current, IF- A
IF - VF
ITF02484
D1 to D4
Tc=25°C
PW=250µs
STK760-710A-E
No. A1053-5/6
Equivalent Circuit Diagram
Sample Application Circuit
E
K
C
N.C pin: 11, 13
VCC
N
P
A
C1
A
C2
VGR
GND
VIN
10
SUB
D1 D2
D3 D4
D5
D6
TR1 TR2
R1
R2
TR3
TR4
18
16
14
12
8
5
1
3
9
7
SUB 12
8
9
18
1
516
14
Signal RB
IC1
10
11
AC1
AC2
VCC
VIN
GND N 7E
VGR
P
K
C
VCC=15V
L1
VB
0V
RCC
13 NC
NC
0.01Ω/5W
RS
Cs Co
22Ω
39Ω470
µ
F×2
5mH
2.2
µ
F
3
VAC=200V
LF
Ci
Iin(AC)
Ri
2.2
µ
F
STK760-710A-E
No. A1053-6/6
PS
This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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