Vishay Siliconix
Si4122DY
New Product
Document Number: 68665
S-81220-Rev. A, 02-Jun-08
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1
N-Channel 40-V (D-S) MOSFET
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• DC/DC Conversion
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)aQg (Typ.)
40
0.0045 at VGS = 10 V 27.2
29 nC
0.006 at VGS = 4.5 V 23.5
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4122DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ± 25
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
27.2
A
TC = 70 °C 20.1
TA = 25 °C 19.2b, c
TA = 70 °C 15.3b, c
Pulsed Drain Current IDM 70
Continuous Source-Drain Diode Current TC = 25 °C IS5.4
TA = 25 °C 2.7b, c
Single Pulse Avalanche Current L = 0.1 mH IAS 40
Avalanche Energy EAS 80 mJ
Maximum Power Dissipation
TC = 25 °C
PD
6.0
W
TC = 70 °C 3.3
TA = 25 °C 3.0b, c
TA = 70 °C 1.9b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 33 42 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21
RoHS
COMPLIANT
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Document Number: 68665
S-81220-Rev. A, 02-Jun-08
Vishay Siliconix
Si4122DY
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V
VDS Temperature Coefficient ΔVDS/TJID = 250 µA 43 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ- 6.0
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.2 2.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 40 V, VGS = 0 V 1µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = 10 V 30 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 10 V, ID = 15 A 0.0036 0.0045 Ω
VGS = 4.5 V, ID = 10 A 0.0048 0.006
Forward Transconductanceagfs VDS = 15 V, ID = 15 A 65 S
Dynamicb
Input Capacitance Ciss
VDS = 20 V, VGS = 0 V, f = 1 MHz
4200
pFOutput Capacitance Coss 475
Reverse Transfer Capacitance Crss 225
Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 10 A 62 95
nC
VDS = 20 V, VGS = 4.5 V, ID = 10 A
29 44
Gate-Source Charge Qgs 12
Gate-Drain Charge Qgd 9
Gate Resistance Rgf = 1 MHz 0.2 1.0 2.0 Ω
Tur n - O n D e l ay Time td(on)
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
42 70
ns
Rise Time tr 34 60
Turn-Off Delay Time td(off) 45 75
Fall Time tf28 45
Tur n - O n D e l ay T im e td(on)
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
14 25
Rise Time tr 10 20
Turn-Off Delay Time td(off) 35 60
Fall Time tf918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 5.4 A
Pulse Diode Forward CurrentaISM 70
Body Diode Voltage VSD IS = 3 A 0.72 1.1 V
Body Diode Reverse Recovery Time trr
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
31 50 ns
Body Diode Reverse Recovery Charge Qrr 31 50 nC
Reverse Recovery Fall Time ta18 ns
Reverse Recovery Rise Time tb13
Document Number: 68665
S-81220-Rev. A, 02-Jun-08
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Vishay Siliconix
Si4122DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
14
28
42
56
70
0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)I D
VGS =10thru4V
VGS =3V
0.0030
0.0036
0.0042
0.0048
0.0054
0.0060
0142842 56 70
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
VGS =4.5V
VGS =10V
0
2
4
6
8
10
0 1326395265
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
VDS =30V
VDS =10V
ID=10A
VDS =20V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
012345
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)I D
TC= 25 °C
TC= 125 °C
TC= - 55 °C
Crss
0
1100
2200
3300
4400
5500
6600
0816 24 32 40
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Coss
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
TJ-Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
ID=15A VGS =10V
VGS =4.5V
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Document Number: 68665
S-81220-Rev. A, 02-Jun-08
Vishay Siliconix
Si4122DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.81.0 1.2
VSD -Source-to-Drain Voltage (V)
- Source Current (A)I S
1
0.01
0.001
0.1
10
100
TJ= 150 °C
TJ= 25 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
Variance (V)VGS(th)
TJ- Temperature (°C)
ID=5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.000
0.004
0.008
0.012
0.016
0.020
012345678910
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
TJ=25 °C
TJ= 125 °C
ID=10A
0
40
80
120
160
200
0110.001 0.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
- Drain Current (A)
ID
0.1
VDS - Drain-to-Source Voltage (V)
*VGS > minimumVGS at which RDS(on) is specified
1ms
10 ms
100 ms
0.1 1 10
10
TA= 25 °C
Single Pulse
Limited byR
DS(on)*
1s
DC
10 s
BVDSS
Limited
Document Number: 68665
S-81220-Rev. A, 02-Jun-08
www.vishay.com
5
Vishay Siliconix
Si4122DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
6
12
18
24
30
0 255075100125150
TC- Case Temperature (°C)
ID- Drain Current (A)
Power Derating, Junction-to-Foot
0.0
1.5
3.0
4.5
6.0
7.5
0 25 50 75 100 125 150
TC- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
TA-Ambient Temperature (°C)
Power (W)
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Document Number: 68665
S-81220-Rev. A, 02-Jun-08
Vishay Siliconix
Si4122DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68665.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA =85°C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 08-Feb-17 1Document Number: 91000
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