To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old com pany name remains in this docum ent, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
Rev.1.10 Dec 21, 2007 Page 1 of 45
REJ03B0219-0110
R8C/2K Group, R8C/2L Group
RENESAS MCU
1. Overview
1.1 Features
The R8C/2K Group and R8C/2L Group of single-chip MCUs incorporates the R8C/Tiny Series CPU core,
employing sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, and it is capable
of executing instructions at high speed. In addition, the CPU core boasts a multiplier for high-speed operation
processing.
Power consumption is low, and the supported operating modes allow additional power control. These MCUs also
use an anti-noise configuration to reduce emissions of electromagnetic noise and are designed to withstand EMI.
Integration of many peripheral functions, including multifunction timer and serial interface, reduces the number of
system components.
Furthermore, the R8C/2L Group has on-chip data flash (1 KB × 2 blocks).
The difference between the R8C/2K Group and R8C/2L G roup is only the presence or absence of data flash. Their
peripheral functions are the same.
1.1.1 Applications
Electronic household appli a nces, office equipment, audio equipment, consumer equipment, etc.
REJ03B0219-0110
Rev.1.10
Dec 21, 2007
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 2 of 45
REJ03B0219-0110
1.1.2 Specifications
Tables 1.1 and 1.2 outlines the Specifications for R8C/2K Group and Tables 1.3 and 1.4 outlines the
Specifications for R8C/2L Group.
Table 1.1 Specific ations for R8C/2K Group (1)
Item Function Specification
CPU Central processing
unit R8C/Tiny series core
Number of fundamental instructions: 89
Minimum instruction execution time:
50 ns (f(XIN) = 20 MHz, VCC = 3.0 to 5.5 V)
100 ns (f(XIN) = 10 MHz, VCC = 2.7 to 5.5 V)
200 ns (f(XIN) = 5 MHz, VCC = 2.2 to 5.5 V)
Multiplier: 16 bits × 16 bits 32 bits
Multiply-accumulate instruction: 16 bits × 16 bits + 32 bits 32 bits
Operation mode: Single-chip mode (address space: 1 Mbyte)
Memory ROM, RAM Refer to Table 1.5 Product List for R8C/2K Group.
Power Supply
Voltage
Detection
Voltage detection
circuit Power-on reset
Voltage detection 3
I/O Ports Programmable I/O
ports Input-only: 3 pins
CMOS I/O ports: 25, selectable pull-up resistor
High current drive ports: 8
Clock Clock generation
circuits 2 circuits: XIN clock oscillation circuit (with on-chip feedback resistor),
On-chip oscillator (high-speed, low-speed)
(high-speed on-chip oscillato r has a frequency adjustment function)
Oscillation stop detection: XIN clock oscillation stop detection function
Frequency divider circuit: Dividing selectable 1, 2, 4, 8, and 16
Low power consumption modes:
Standard operating mode (high-speed clock, high-speed on-chip oscillator,
low-speed on-chip oscillato r), wait mode, stop mode
Interrupts External: 4 so urces, Internal: 15 sources, Software: 4 sources
Priority levels: 7 levels
Watchdog Timer 15 bits × 1 (with prescaler), reset start selectable
Timer Timer RA 8 bits × 1 (with 8-bit prescaler)
Timer mode (period timer), pulse output mode (ou tp ut level inverted every
period), event counter mode, pulse width measurement mode, pulse period
measurement mode
Timer RB 8 bits × 1 (with 8-bit prescaler)
T imer mode (period timer), programmable waveform generation mode (PWM
output), programmable one-shot generation mode, programma ble wait one-
shot generation mode
Timer RC 16 bits × 1 (w it h 4 capt ure/compa re r eg i ste rs)
Timer mode (input capture function, output compare function), PWM mode
(output 3 pins), PWM2 mode (PWM output pin)
Timer RD 16 bits × 2 (w it h 4 capt ure/compa re r eg i ste rs)
Timer mode (input capture function, output compare function), PWM mode
(output 6 pins), reset synchronous PWM mode (output three-phase
waveforms (6 pins), sawtooth wave modulation), complementary PWM mode
(output three-phase waveforms (6 pins), triangular wave modulation), PWM3
mode (PWM output 2 pins with fixed period)
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 3 of 45
REJ03B0219-0110
NOTES:
1. Specify the D version if D version functions are to be used.
2. Please contact Renesas Technology sales offices for the Y version.
Table 1.2 Specific ations for R8C/2K Group (2)
Item Function Specification
Serial
Interface UART0, UART2 Clock synchronous serial I/O/U ART × 2
LIN Module Hardware LIN: 1 (timer RA, UART0)
A/D Converter 10-bit resolution × 9 channels, inclu des sample and hold function
Flash Memory Programming and erasure voltage: VCC = 2.7 to 5.5 V
Programming and erasure endurance: 100 times
Program security: ROM code protect, ID code check
Debug functions: On-chip debug, on-board flash rewrite function
Operating Frequency/Supply
Voltage f(XIN) = 20 MHz (VCC = 3.0 to 5.5 V)
f(XIN) = 10 MHz (VCC = 2.7 to 5.5 V)
f(XIN) = 5 MHz (VCC = 2.2 to 5.5 V) (VCC = 2.7 to 5.5 V for A/D converter only)
Current consumption Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz)
Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)
Typ. 23 µA (VCC = 3.0 V, wait mode, low-speed on-chip oscillator used)
Typ. 0.7 µA (VCC = 3.0 V, stop mode)
Operating Ambient Temperature -20 to 85°C (N version)
-40 to 85°C (D version)(1)
-20 to 105°C (Y version)(2)
Package 32-pin LQFP
Package code: PLQP0032GB-A (previous code: 32P6U-A)
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 4 of 45
REJ03B0219-0110
Table 1.3 Specifications for R8C/2L Group (1)
Item Function Specification
CPU Central processing
unit R8C/Tiny series core
Number of fundamental instructions: 89
Minimum instruction execution time:
50 ns (f(XIN) = 20 MHz, VCC = 3.0 to 5.5 V)
100 ns (f(XIN) = 10 MHz, VCC = 2.7 to 5.5 V)
200 ns (f(XIN) = 5 MHz, VCC = 2.2 to 5.5 V)
Multiplier: 16 bits × 16 bits 32 bits
Multiply-accumulate instruction: 16 bits × 16 bits + 32 bits 32 bits
Operation mode: Single-chip mode (address space: 1 Mbyte)
Memory ROM, RAM Refer to Table 1.6 Product List for R8C/2L Group.
Power Supply
Voltage
Detection
Voltage detection
circuit Power-on reset
Voltage detection 3
I/O Ports Programmable I/O
ports Input-only: 3 pins
CMOS I/O ports: 25, selectable pull-up resistor
High current drive ports: 8
Clock Clock generation
circuits 2 circuits: XIN clock oscillation circuit (with on-chip feedback resistor),
On-chip oscillator (high-speed, low-speed)
(high-speed on-chip oscillato r has a frequency adjustment function)
Oscillation stop detection: XIN clock oscillation stop detection function
Frequency divider circuit: Dividing selectable 1, 2, 4, 8, and 16
Low power consumption modes:
Standard operating mode (high-speed clock, high-speed on-chip oscillator,
low-speed on-chip oscillato r), wait mode, stop mode
Interrupts External: 4 so urces, Internal: 15 sources, Software: 4 sources
Priority levels: 7 levels
Watchdog Timer 15 bits × 1 (with prescaler), reset start selectable
Timer Timer RA 8 bits × 1 (with 8-bit prescaler)
Timer mode (period timer), pulse output mode (ou tp ut level inverted every
period), event counter mode, pulse width measurement mode, pulse period
measurement mode
Timer RB 8 bits × 1 (with 8-bit prescaler)
T imer mode (period timer), programmable waveform generation mode (PWM
output), programmable one-shot generation mode, programma ble wait one-
shot generation mode
Timer RC 16 bits × 1 (w it h 4 capt ure/compa re r eg i ste rs)
Timer mode (input capture function, output compare function), PWM mode
(output 3 pins), PWM2 mode (PWM output pin)
Timer RD 16 bits × 2 (w it h 4 capt ure/compa re r eg i ste rs)
Timer mode (input capture function, output compare function), PWM mode
(output 6 pins), reset synchronous PWM mode (output three-phase
waveforms (6 pins), sawtooth wave modulation), complementary PWM mode
(output three-phase waveforms (6 pins), triangular wave modulation), PWM3
mode (PWM output 2 pins with fixed period)
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 5 of 45
REJ03B0219-0110
NOTES:
1. Specify the D version if D version functions are to be used.
2. Please contact Renesas Technology sales offices for the Y version.
Table 1.4 Specifications for R8C/2L Group (2)
Item Function Specification
Serial
Interface UART0, UART2 Clock synchronous serial I/O/U ART × 2
LIN Module Hardware LIN: 1 (timer RA, UART0)
A/D Converter 10-bit resolution × 9 channels, inclu des sample and hold function
Flash Memory Programming and erasure voltage: VCC = 2.7 to 5.5 V
Programming and erasure endurance: 10,000 times (data flash)
1,000 times (program ROM)
Program security: ROM code protect, ID code check
Debug functions: On-chip debug, on-board flash rewrite function
Operating Frequency/Supply
Voltage f(XIN) = 20 MHz (VCC = 3.0 to 5.5 V)
f(XIN) = 10 MHz (VCC = 2.7 to 5.5 V)
f(XIN) = 5 MHz (VCC = 2.2 to 5.5 V) (VCC = 2.7 to 5.5 V for A/D converter only)
Current consumption Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz)
Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)
Typ. 23 µA (VCC = 3.0 V, wait mode, low-speed on-chip oscillator used)
Typ. 0.7 µA (VCC = 3.0 V, stop mode)
Operating Ambient Temperature -20 to 85°C (N version)
-40 to 85°C (D version)(1)
-20 to 105°C (Y version)(2)
Package 32-pin LQFP
Package code: PLQP0032GB-A (previous code: 32P6U-A)
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 6 of 45
REJ03B0219-0110
1.2 Product List
Table 1.5 lists the Product List for R8C/ 2K Group, Figure 1.1 shows a Part Number , Memory Size, and Package of
R8C/2K Group, Table 1.6 li sts the Product List for R8C/2L Gro up, and Figure 1.2 shows a Part Number, Memory
Size, and Package of R8C/2L Group.
(D): Under development
NOTE:
1. The user ROM is programmed before shipment.
Figure 1.1 Part Number, Memory Size, and Package of R8C/2K Group
Table 1.5 Product List for R8C/2K Group Current of Dec. 2007
Part No. ROM Capacity RAM Capacity Package Type Remarks
R5F212K2SNFP 8 Kbytes 1 Kbyte PLQP0032GB-A N version
R5F212K4SNFP 16 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F212K2SDFP 8 Kbytes 1 Kbyte PLQP0032GB-A D version
R5F212K4SDFP 16 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F212K2SNXXXFP (D) 8 Kbytes 1 Kbyte PLQP0032GB-A N version
Factory programming
product(1)
R5F212K4SNXXXFP (D) 16 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F212K2SDXXXFP (D) 8 Kbytes 1 Kbyte PLQP0032GB-A D version
Factory programming
product(1)
R5F212K4SDXXXFP (D) 16 Kbytes 1.5 Kbytes PLQP0032GB-A
Part No. R 5 F 21 2K 2 S N XXX FP
Package type:
FP: PLQP0032GB-A
ROM numb er
Classification
N: Operating ambient temperature -20°C to 85°C
D: Operating ambient temperature -40°C to 85°C
Y: Operating ambient temperature -20°C to 105°C (1)
S: Low-voltage version
ROM capacity
2: 8 KB
4: 16 KB
R8C/2K Group
R8C/Tiny Series
Memory type
F: Flash memory
Renesas MCU
Renesas semiconductor
NOTE:
1: Please contact Renesas Technology sale s offices for the Y version.
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 7 of 45
REJ03B0219-0110
(D): Under development
NOTE:
1. The user ROM is programmed before shipment.
Figure 1.2 Part Number, Memory Size, and Package of R8C/2L Group
Table 1.6 Product List for R8C/2L Group Current of Dec. 2007
Part No. ROM Capacity RAM
Capacity Package Type Remarks
P r o g r a m RO M Data flash
R5F212L2SNFP 8 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A N version
R5F212L4SNFP 16 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F212L2SDFP 8 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A D version
R5F212L4SDFP 16 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F212L2SNXXXFP (D) 8 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A N version
Factory
programming
product(1)
R5F212L4SNXXXFP (D) 16 Kbytes 1 Kb yte × 2 1.5 Kbytes PLQP0032GB-A
R5F212L2SDXXXFP (D) 8 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A D version
Factory
programming
product(1)
R5F212L4SDXXXFP (D) 16 Kbytes 1 Kb yte × 2 1.5 Kbytes PLQP0032GB-A
Part No. R 5 F 21 2L 2 S N XXX FP
Package type:
FP: PLQP0032GB-A
ROM numb er
Classification
N: Operating ambient temperature -20°C to 85°C
D: Operating ambient temperature -40°C to 85°C
Y: Operating ambient temperature -20°C to 105°C (1)
S: Low-voltage version
ROM capacity
2: 8 KB
4: 16 KB
R8C/2L Group
R8C/Tiny Series
Memory type
F: Flash memory
Renesas MCU
Renesas semiconductor
NOTE:
1: Please contact Renesas Technology sales offices for the Y version.
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 8 of 45
REJ03B0219-0110
1.3 Block Diagram
Figure 1.3 shows a Block Diagram.
Figure 1.3 Block Diagra m
R8C/Tiny Series CPU core Memory
ROM(1)
RAM(2)
Multiplier
R0H R0L
R1H R2
R3
R1L
A0
A1
FB
SB
USP
ISP
INTB
PC
FLG
I/O ports
NOTES:
1. ROM size va ri es with MCU type.
2. RAM size v aries with MCU type.
8
Port P1
3
Port P3
1 3
Port P4
5
Port P0
8
Port P2
System clock
generation circuit
XIN-XOUT
High-speed on-chip oscillator
Low-speed on-chip oscillator
Timers
Timer RA (8 bits × 1)
Timer RB (8 bits × 1)
Timer RC (16 bits × 1)
Timer RD (16 bits × 2)
UART or
clock synchronous serial I/O
(8 bits × 2)
LIN module
Peripheral functions
Watchdog timer
(15 bits)
A/D converter
(10 bits × 9 channels)
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 9 of 45
REJ03B0219-0110
1.4 Pin Assignment
Figure 1.4 shows the Pin Assignment (Top View). Table 1.7 outlines the Pi n Name Information by Pin Number.
Figure 1.4 Pin Assignment (Top View)
R8C/2K Group
R8C/2L Group
XIN/P4_6
XOUT/P4_7(1)
VSS/AVSS
RESET
VCC/AVCC
MODE
P4_5/INT0
P1_7/TRAIO/INT1
P3_5/TRCIOD
P1_0/KI0/AN8
P1_4/TXD0
VREF/P4_2
P1_3/KI3/AN11/TRBO
P3_3/INT3/TRCCLK
P1_1/KI1/AN9/TRCIOA/TRCTRG
P1_2/KI2/AN10/TRCIOB
P0_3/AN4/CLK2
P0_2/AN5/RXD2
P0_1/AN6/TXD2
P0_0/AN7
P0_5/AN2
P1_5/RXD0/(TRAIO)/(INT1)(2)
P1_6/CLK0
P3_4/TRCIOC
29
28
27
26
25
32
31
30
9
10
11
12
13
14
15
16
24 23 22 21 20 19 18 17
5781234 6
PLQP0032GB-A
(32P6U-A)
(top view) P2_7/TRDIOD1
P2_6/TRDIOC1
P2_5/TRDIOB1
P2_4/TRDIOA1
P2_3/TRDIOD0
P2_2/TRDIOC0
P2_1/TRDIOB0
P2_0/TRDIOA0/TRDCLK
NOTES:
1. P4_7 are an input-only port.
2. Can be assigned to the pin in parentheses by a program.
3. Confirm the pin 1 position on the package by referring to the package dimensions.
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 10 of 45
REJ03B0219-0110
NOTE:
1. Can be assigned to the pin in parentheses by a program.
Table 1.7 Pin Name Information by Pin Number
Pin
Number Control Pin Port I/O Pin Functions for of Peripheral Modul es
Interrupt Timer Serial Interface
A/D Converter
1VREFP4_2
2MODE
3RESET
4XOUTP4_7
5 VSS/AVSS
6XINP4_6
7 VCC/AVCC
8P3_3
INT3 TRCCLK
9 P2_7 TRDIOD1
10 P2_6 TRDIOC1
11 P2_5 TRDIOB1
12 P2_4 TRDIOA1
13 P2_3 TRDIOD0
14 P2_1 TRDIOB0
15 P2_2 TRDIOC0
16 P2_0 TRDIOA0/TRDCLK
17 P4_5 INT0
18 P1_7 INT1 TRAIO
19 P1_6 CLK0
20 P1_5 (INT1)(1) (TRAIO)(1) RXD0
21 P1_4 TXD0
22 P1_3 KI3 TRBO AN11
23 P1_2 KI2 TRCIOB AN10
24 P1_1 KI1 TRCIOA/TRCTRG AN9
25 P1_0 KI0 AN8
26 P3_4 TRCIOC
27 P3_5 TRCIOD
28 P0_5 AN2
29 P0_3 CLK2 AN4
30 P0_2 RXD2 AN5
31 P0_1 TXD2 AN6
32 P0_0 AN7
R8C/2K Group, R8C/2L Group 1. Overview
Rev.1.10 Dec 21, 2007 Page 11 of 45
REJ03B0219-0110
1.5 Pin Functions
Table 1.8 lists Pin Functions.
I: Input O: Output I/O: Input and output
NOTE:
1. Refer to the oscillator manufacturer for oscillation characteristics.
Table 1.8 Pin Functions
Item Pin Name
I/O Type
Description
Power supply input VCC, VSS Apply 2.2 V to 5.5 V to the VCC pin. Apply 0 V to the VSS pin.
Analog power
supply input AVCC, AVSS Power supply for the A/D converter.
Connect a capacitor between AVCC and AVSS.
Reset input RESET I Input “L” on this pin resets the MCU.
MODE MODE I Connect this pin to VCC via a resistor.
XIN clock input XIN I These pins are provided fo r XIN clock generation circuit I/O.
Connect a ceramic resonator or a crystal oscillator between
the XIN and XOUT pins(1). To use an external clock, input it to
the XIN pin and leave the XOUT pin open.
XIN clock output XOUT O
INT interrupt input INT0, INT1, INT3 IINT interrupt input pins.
INT0 is timer RB, timer RC and timer RD input pins.
Key input interrupt KI0 to KI3 I Key input interrupt input pins
Timer RA TRAIO I/O Timer RA I/O pin
Timer RB TRBO O Timer RB output pin
Timer RC TRCCLK I External clock input pin
TRCTRG I External trigger input pin
TRCIOA, TRCIOB,
TRCIOC, TRCIOD I/ O Timer RC I/O pins
Timer RD TRDIOA0, TRDIOA1,
TRDIOB0, TRDIOB1,
TRDIOC0, TRDIOC1,
TRDIOD0, TRDIOD1
I/O Timer RD I/O pins
TRDCLK I Extern al clock input pin
Serial interface CLK0, CLK2 I/O Transfer clock I/O pins
RXD0, RXD2 I Serial data input pins
TXD0, TXD2 O Serial data output pins
Reference voltage
input VREF I Reference voltage input pin to A/D converter
A/D converter AN2, AN4 to AN11 I Analog input pins to A/D converte r
I/O port P0_0 to P0_3, P0_5,
P1_0 to P1_7,
P2_0 to P2_7,
P3_3 to P3_5,
P4_5,
I/O CMOS I/O ports. Each port has an I/O select direction
register, allowing each pin in the port to be directed for input
or output individually.
Any port set to input can be set to use a pull-up resistor or not
by a program.
P2_0 to P2_7 also function as LED drive ports.
Input port P4_2, P4_6, P4_7 I Input-only ports
R8C/2K Group, R8C/2L Group 2. Central Processing Unit (CPU)
Rev.1.10 Dec 21, 2007 Page 12 of 45
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2. Central Processing Unit (CPU)
Figure 2.1 shows the CPU Registers. The CPU contains 13 registers. R0, R1, R2, R3, A0, A1, and FB configure a
register bank. There are two sets of register bank.
Figure 2.1 CPU Registers
R2
b31 b15 b8b7 b0
Data registers(1)
Address registers(1)
R3 R0H (high-order of R0)
R2
R3
A0
A1
INTBHb15b19 b0
INTBL
FB Frame base register(1)
The 4 high order bits of INTB are INTBH and
the 16 low order bits of INTB are INTBL.
Interrupt table register
b19 b0
USP
Program counter
ISP
SB
User stack pointer
Interrupt stack pointer
Static base register
PC
FLG Flag register
Carry flag
Debug flag
Zero flag
Sign flag
Register bank select flag
Overflow flag
Interrupt enable flag
Stack pointer select flag
Reserved bit
Processor interrupt priority level
Reserved bit
C
IPL DZSBOIU
b15 b0
b15 b0
b15 b0
b8 b7
NOTE:
1. These registers comprise a register bank. There are two register banks.
R1H (high-order of R1)
R0L (low-order of R0)
R1L (low-order of R1)
R8C/2K Group, R8C/2L Group 2. Central Processing Unit (CPU)
Rev.1.10 Dec 21, 2007 Page 13 of 45
REJ03B0219-0110
2.1 Data Registers (R0, R1, R2, and R3)
R0 is a 16-bit register for transfer, arithmetic, and logic operations. The same applies to R1 to R3. R0 can be split
into high-order bits (R 0H) and low-order bit s (R0L) to be used sep aratel y as 8-bit data regist ers. R1H and R 1L are
analogous to R0H and R0L. R2 can be combined with R0 and used a s a 32-bit data regi ster (R2R0). R3R1 is
analogous to R2R0.
2.2 Address Registers (A0 and A1)
A0 is a 16-bit register for address register indirect addressing and address register relative addressing. It is also
used for transfer , arithmetic, and logic operations. A1 is analogous to A0. A1 can be combined with A0 and as a 32-
bit address register (A1A0).
2.3 Frame Base Register (FB)
FB is a 16-bit register for FB relative addressing.
2.4 Interrupt Table Register (INTB)
INTB is a 20-bit register that indicates the start address of an interrupt vector table.
2.5 Program Counter (PC)
PC is 20 bits wide and indicates the address of the next instruction to be executed.
2.6 User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)
The stack pointers (SP), USP, and ISP, are each 16 bits wide. The U flag of FLG is used to switch between
USP and ISP.
2.7 Static Base Register (SB)
SB is a 16-bit register for SB relative addressing.
2.8 Flag Register (FLG)
FLG is an 11-bit register indicating the CPU state.
2.8.1 Carry Flag (C)
The C flag retains carry, borrow, or shift-out bits that have been generated by the arithmetic and logic unit.
2.8.2 Debug Flag (D)
The D flag is for debugging only. Set it to 0.
2.8.3 Zero Flag (Z)
The Z flag is set to 1 when an arithmetic operation results in 0; otherwise to 0.
2.8.4 Sign Flag (S)
The S flag is set to 1 when an arithmetic operation results in a negative valu e; otherwise to 0.
2.8.5 Register Bank Select Flag (B)
Register bank 0 is selected when the B flag is 0. Register bank 1 is selected when this flag is set to 1.
2.8.6 Overflow Flag (O)
The O flag is set to 1 when an operation results in an overflow; otherwise to 0.
R8C/2K Group, R8C/2L Group 2. Central Processing Unit (CPU)
Rev.1.10 Dec 21, 2007 Page 14 of 45
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2.8.7 Interrupt Enable Flag (I)
The I flag enables maskable interrupts.
Interrupt are disabled when the I flag is set to 0, and are enabled when the I flag is set to 1. The I flag is set to 0
when an interrupt request is acknowledged.
2.8.8 Stack Pointer Select Flag (U)
ISP is selected when the U flag is set to 0; USP is selected when the U flag is set to 1.
The U flag is set to 0 when a hardware interrupt request is acknowledged or the INT instruction of software
interrupt numbers 0 to 31 is executed.
2.8.9 Processor Interrupt Priority Level (IPL)
IPL is 3 bits wide and assigns processor inte rrupt priorit y levels from level 0 to level 7.
If a requested interrupt has higher priority than IPL, the interrupt is enabled.
2.8.10 Reserved Bit
If necessary, set to 0. When read, the content is undefined.
R8C/2K Group, R8C/2L Group 3. Memory
Rev.1.10 Dec 21, 2007 Page 15 of 45
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3. Memory
3.1 R8C/2K Group
Figure 3.1 is a Memory Map of R8C/2K Group. The R8C/2K Group has 1 Mbyte of address space from addresses
00000h to FFFFFh.
The internal ROM is allocated lower addresses, beginning with address 0 FFFFh. For exam ple, a 16 -Kbyte i nternal
ROM area is allocated addresses 0C000h to 0FFFFh.
The fixed interrupt vector table is allocated addresses 0FFDCh to 0FFFFh. They store the starting address of each
interrupt routine.
The internal RAM is allocated higher addresses beginning with address 00400h. Fo r example, a 1.5-Kbyte internal
RAM area is allocated addresses 00400h to 009FFh. The internal RAM is used not only for storing data but also for
calling subroutines and as stacks when interrupt requests are acknowledged.
Special function registers (SFRs) are allocated addresses 00000h to 002FFh. The peripheral function control
registers are allocated here. All addresses within the SFR, which have nothing allocated are reserved for future use
and cannot be accessed by users.
Figure 3.1 Memory Map of R8C/2 K Group
Undefined inst ruction
Overflow
BRK instruct ion
Address mat ch
Single step
Watchdog timer/oscillation stop detection/voltage monitor
(Reserved)
(Reserved)
Reset
00400h
002FFh
00000h
Internal RAM
SFR
(Refer to 4. Special
Function Registers
(SFRs))
0FFFFh
0FFDCh
NOTE:
1. The blank regions a re reserved. Do not access locations in these regions.
FFFFFh
0FFFFh
0YYYYh Internal ROM
(program ROM)
0XXXh
Part Number Internal ROM Internal RAM
Size Size
R5F212K2SNFP, R5F21 2K2SDFP,
R5F212K2SNXXXFP, R5F212K2SDXXXFP
R5F212K4SNFP, R5F212K4SDFP,
R5F212K4SNXXXFP, R5F212K4SDXXXFP
8 Kbyte s
16 Kbytes
0E000h
0C000h
1 Kbyt e
1.5 Kbytes
007FFh
009FFh
Address 0YYYYh Address 0XXXXh
R8C/2K Group, R8C/2L Group 3. Memory
Rev.1.10 Dec 21, 2007 Page 16 of 45
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3.2 R8C/2L Group
Figure 3.2 is a Memory Map of R8C/2L Group. The R8C/2L Group has 1 Mbyte of address space from addresses
00000h to FFFFFh.
The internal ROM (program ROM) is allocated lower addresses, beginning with address 0FFFFh. For example, a
16-Kbyte internal ROM area is allocated addresses 0C00 0h to 0FFFFh.
The fixed interrupt vector table is allocated addresses 0FFDCh to 0FFFFh. They store the starting address of each
interrupt routine.
The internal ROM (data flash) is allocated addresses 02400h to 02BFFh.
The internal RAM area is allocated higher addresses, beginning with address 00400h. For example, a 1.5-Kbyte
internal RAM is allocated addresses 00400h to 009FFh. The internal RAM is used not only for storing data but also
for calling subroutines and as stacks when interrupt requests are acknowledged.
Special function registers (SFRs) are allocated addresses 00000h to 002FFh. The peripheral function control
registers are allocated here. All addresses within the SFR, which have nothing allocated are reserved for future use
and cannot be accessed by users.
Figure 3.2 Memory Map of R8C/2L Group
Undefined inst ruction
Overflow
BRK instruct ion
Address mat ch
Single step
Watchdog timer/oscillation stop detection/voltage monitor
(Reserved)
(Reserved)
Reset
FFFFFh
0FFFFh
0YYYYh
00400h
002FFh
00000h
Internal ROM
(program ROM)
Internal RAM
SFR
(Refer to 4. Special
Function Registers
(SFRs))
0FFFFh
0FFDCh
Internal ROM
(data flash)(1)
NOTES:
1. Data flash block A (1 Kbyte) and B (1 Kbyte) are shown.
2. The blank regions are reserved. Do not access loca tions in these regions.
0XXXXh
02400h
02BFFh
Part Number Internal ROM
Size Size
R5F212L2SNFP, R5F212L2SDFP,
R5F212L2SNXXXFP, R5F212L2SDXXXFP
R5F212L4SNFP, R5F212L4SDFP,
R5F212L4SNXXXFP, R5F212L4SDXXXFP
8 Kbyte s
16 Kbytes
0E000h
0C000h
1 Kbyt e
1.5 Kbytes
007FFh
009FFh
Address 0YYYYh Address 0XXXXh
Internal RAM
R8C/2K Group, R8C/2L Group 4. S pecial Function Registers (SFRs)
Rev.1.10 Dec 21, 2007 Page 17 of 45
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4. Special Function Registers (SFRs)
An SFR (special function register) is a control register for a peripheral function. Tables 4.1 to 4.7 list the speci al
function registers.
Table 4.1 SFR Information (1)(1)
X: Undefined
NOTES:
1. The blank regions are reserved. Do not access locations in these regions.
2. Software reset, wat chdog timer reset, voltage monitor 1 reset, or voltage monitor 2 reset do not affect this register.
3. The LVD0ON bit in the OFS register is set to 1 and hardware reset.
4. Power-on reset, voltage monitor 0 reset, or the LVD0ON bit in the OFS register is set to 0 and hardware reset.
5. Software reset, wat chdog timer reset, voltage monitor 1 reset, or voltage monitor 2 reset do not affect b2 and b3.
6. The CSPROINI bit in the OFS register is set to 0.
Address Register Symbol After reset
0000h
0001h
0002h
0003h
0004h Processor Mode Register 0 PM0 00h
0005h Processor Mode Register 1 PM1 00h
0006h System Clock Control Register 0 CM0 01101000b
0007h System Clock Control Register 1 CM1 00100000b
0008h
0009h
000Ah Protect Register PRCR 00h
000Bh
000Ch Oscillation Stop Det ection Register OCD 00000100b
000Dh Watchdog Timer Reset Register WDTR XXh
000Eh Watchdog Timer Start Register WDTS XXh
000Fh Watchdog Timer Control Register WDC 00X11111b
0010h Address Match Interrupt Register 0 RMAD0 00h
0011h 00h
0012h 00h
0013h Address Match Interrupt Enab le Register AIER 00h
0014h Address Match Interrupt Register 1 RMAD1 00h
0015h 00h
0016h 00h
0017h
0018h
0019h
001Ah
001Bh
001Ch Count Source Protection Mode Register CSPR 00h
10000000b(6)
001Dh
001Eh
001Fh
0020h
0021h
0022h
0023h High-Speed On-Chip Oscillator Control Register 0 FRA0 00h
0024h High-Speed On-Chip Oscillator Control Register 1 FRA1 When shipping
0025h High-Speed On-Chip Oscillator Control Register 2 FRA2 00h
0026h
0027h
0028h
0029h
002Ah
002Bh High-Speed On-Chip Oscillator Control Regist er 6 FRA6 When Shipping
002Ch High-Speed On-Chip Oscillator Control Register 7 FRA7 When Shipping
0030h
0031h Voltage Detection Register 1(2) VCA1 00001000b
0032h Voltage Detection Register 2(2) VCA2 00h(3)
00100000b(4)
0033h
0034h
0035h
0036h Voltage Monitor 1 Circuit Control Register(5) VW1C 00001000b
0037h Voltage Monitor 2 Circuit Control Register(5) VW2C 00h
0038h Voltage Monitor 0 Circuit Control Register(2) VW0C 0000X000b(3)
0100X001b(4)
0039h
003Ah
003Eh
003Fh
R8C/2K Group, R8C/2L Group 4. S pecial Function Registers (SFRs)
Rev.1.10 Dec 21, 2007 Page 18 of 45
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Table 4.2 SFR Information (2)(1)
X: Undefined
NOTE:
1. The blank regions are reserved. Do not access locations in these regions.
Address Register Symbol After reset
0040h
0041h
0042h
0043h
0044h
0045h
0046h
0047h T i mer RC Interrupt Control Register TRCIC XXXXX000b
0048h T i mer RD0 Interrupt Control Register TRD0IC XXXXX000b
0049h T i mer RD1 Interrupt Control Register TRD1IC XXXXX000b
004Ah
004Bh UART2 Transmit Interrupt Control Register S2TIC XXXXX000b
004Ch UART2 Receive Interrupt Control Register S2RIC XXXXX000b
004Dh Key Input Interrupt Control Register KUPIC XXXXX000b
004Eh A/D Conversion Interrupt Control Register ADIC XXXXX000b
004Fh
0050h
0051h UART0 Transmit Interrupt Control Register S0TIC XXXXX000b
0052h UART0 Receive Interrupt Control Register S0RIC XXXXX000b
0053h
0054h
0055h
0056h Timer RA Interrupt Control Register TRAIC XXXXX000b
0057h
0058h Timer RB Interrupt Control Register TRBIC XXXXX000b
0059h INT1 Interrupt Control Register INT1IC XX00X000b
005Ah INT3 Interrupt Control Register INT3IC XX00X000b
005Bh
005Ch
005Dh INT0 Interrupt Control Register INT0IC XX00X000b
005Eh
005Fh
0060h
0061h
0062h
0063h
0064h
0065h
0066h
0067h
0068h
0069h
006Ah
006Bh
006Ch
006Dh
006Eh
006Fh
0070h
0071h
0072h
0073h
0074h
0075h
0076h
0077h
0078h
0079h
007Ah
007Bh
007Ch
007Dh
007Eh
007Fh
R8C/2K Group, R8C/2L Group 4. S pecial Function Registers (SFRs)
Rev.1.10 Dec 21, 2007 Page 19 of 45
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Table 4.3 SFR Information (3)(1)
X: Undefined
NOTE:
1. The blank regions are reserved. Do not access locations in these regions.
Address Register Symbol After reset
0080h
0081h
0082h
0083h
0084h
0085h
0086h
0087h
0088h
0089h
008Ah
008Bh
008Ch
008Dh
008Eh
008Fh
0090h
0091h
0092h
0093h
0094h
0095h
0096h
0097h
0098h
0099h
009Ah
009Bh
009Ch
009Dh
009Eh
009Fh
00A0h UART0 Transmit/Receive Mode Register U0MR 00h
00A1h UART0 Bit Ra te Register U0BRG XXh
00A2h UART0 Transmit Buffer Register U0TB XXh
00A3h XXh
00A4h UART0 Transmit/Receive Control Register 0 U0C0 00001000b
00A5h UART0 Transmit/Receive Control Register 1 U0C1 00000010b
00A6h UART0 Receive Buffer Register U0RB XXh
00A7h XXh
00A8h
00A9h
00AAh
00ABh
00ACh
00ADh
00AEh
00AFh
00B0h
00B1h
00B2h
00B3h
00B4h
00B5h
00B6h
00B7h
00B8h
00B9h
00BAh
00BBh
00BCh
00BDh
00BEh
00BFh
R8C/2K Group, R8C/2L Group 4. S pecial Function Registers (SFRs)
Rev.1.10 Dec 21, 2007 Page 20 of 45
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Table 4.4 SFR Information (4)(1)
X: Undefined
NOTE:
1. The blank regions are reserved. Do not access locations in these regions.
Address Register Symbol After reset
00C0h A/D Register AD XXh
00C1h XXh
00C2h
00C3h
00C4h
00C5h
00C6h
00C7h
00C8h
00C9h
00CAh
00CBh
00CCh
00CDh
00CEh
00CFh
00D0h
00D1h
00D2h
00D3h
00D4h A/D Control Register 2 ADCON2 00h
00D5h
00D6h A/D Control Register 0 ADCON0 00h
00D7h A/D Control Register 1 ADCON1 00h
00D8h
00D9h
00DAh
00DBh
00DCh
00DDh
00DEh
00DFh
00E0h Port P0 Register P0 XXh
00E1h Port P1 Register P1 XXh
00E2h Port P0 Direction Register PD0 00h
00E3h Port P1 Direction Register PD1 00h
00E4h Port P2 Register P2 XXh
00E5h Port P3 Register P3 XXh
00E6h Port P2 Direction Register PD2 00h
00E7h Port P3 Direction Register PD3 00h
00E8h Port P4 Register P4 XXh
00E9h
00EAh Port P4 Direction Register PD4 00h
00EBh
00ECh
00EDh
00EEh
00EFh
00F0h
00F1h
00F2h
00F3h
00F4h Port P2 Drive Capacity Control Register P2DRR 00h
00F5h Pin Select Register 1 PINSR1 XXh
00F6h Pin Select Register 2 PINSR2 XXh
00F7h Pin Select Register 3 PINSR3 XXh
00F8h Port Mode Register PMR 00h
00F9h External Input Enable Register INTEN 00h
00FAh INT Input Filter Select Register INTF 00h
00FBh Key Input Enable Register KIEN 00h
00FCh Pull-Up Control Register 0 PUR0 00h
00FDh Pull-Up Control Register 1 PUR1 XX000000b
00FEh
00FFh
R8C/2K Group, R8C/2L Group 4. S pecial Function Registers (SFRs)
Rev.1.10 Dec 21, 2007 Page 21 of 45
REJ03B0219-0110
Table 4.5 SFR Information (5)(1)
NOTE:
1. The blank regions are reserved. Do not access locations in these regions
Address Register Symbol After reset
0100h Timer RA Control Register TRACR 00h
0101h Timer RA I/O Control Register TRAIOC 00h
0102h Timer RA Mode Register TRAMR 00h
0103h Timer RA Prescaler Register TRAPRE FFh
0104h Timer RA Register TRA FFh
0105h LIN Control Register 2 LINCR2 00h
0106h LIN Control Register LINCR 00h
0107h LIN Status Register LINST 00h
0108h Timer RB Control Register TRBCR 00h
0109h Timer RB One-Shot Control Register TRBOCR 00h
010Ah Timer RB I/O Control Register TRBIOC 00h
010Bh Timer RB Mode Register TRBMR 00h
010Ch Timer RB Prescaler Register TRBPRE FFh
010Dh Timer RB Secondary Register TRBSC FFh
010Eh Timer RB Primary Register TRBPR FFh
010Fh
0110h
0111h
0112h
0113h
0114h
0115h
0116h
0117h
0118h
0119h
011Ah
011Bh
011Ch
011Dh
011Eh
011Fh
0120h T i mer RC Mode Register TRCMR 01001000b
0121h Timer RC Control Register 1 TRCCR1 00h
0122h T i mer RC Interrupt Enable Register TRCIER 01110000b
0123h Timer RC Status Register TRCSR 01110000b
0124h Timer RC I/O Control Register 0 TRCIOR0 10001000b
0125h Timer RC I/O Control Register 1 TRCIOR1 10001000b
0126h Timer RC Counter TRC 0 0h
0127h 00h
0128h Timer RC General Register A TRCGRA FFh
0129h FFh
012Ah Timer RC General Register B TRCGRB FFh
012Bh FFh
012Ch Timer RC General Register C TRCGRC FFh
012Dh FFh
012Eh Timer RC General Register D TRCGRD FFh
012Fh FFh
0130h Timer RC Control Register 2 TRCCR2 00011111b
0131h Timer RC Digital Filter Function Select Register TRCDF 00h
0132h Timer RC Output Master Enable Register TRCOER 01111111b
0133h
0134h
0135h
0136h
0137h Timer RD Start Register TRDSTR 11111100b
0138h T i mer RD Mode Register TRDMR 00001110b
0139h T i mer RD PWM Mode Register TRDPMR 10001000b
013Ah Timer RD Function Control Register TRDFCR 10000000b
013Bh Timer RD Output Master Enable Register 1 TRDOER1 FFh
013Ch Timer RD Output Master Enable Register 2 TRDOER2 01111111b
013Dh Timer RD Output Control Register TRDOCR 00h
013Eh Timer RD Digital Filter Function Select Register 0 TRDDF0 00h
013Fh Timer RD Digital Filter Function Select Register 1 TRDDF1 00h
R8C/2K Group, R8C/2L Group 4. S pecial Function Registers (SFRs)
Rev.1.10 Dec 21, 2007 Page 22 of 45
REJ03B0219-0110
Table 4.6 SFR Information (6)(1)
X: Undefined
NOTE:
1. The blank regions are reserved. Do not access locations in these regions.
Address Register Symbol After reset
0140h Timer RD Control Register 0 TRDCR0 00h
0141h Timer RD I/O Control Register A0 TRDIORA0 10001000b
0142h Timer RD I/O Control Register C0 TRDIORC0 10001000b
0143h Timer RD Status Register 0 TRDSR0 11100000b
0144h T i mer RD Interrupt Enable Register 0 TRDIER0 11100000b
0145h T i mer RD PWM Mode Output Level Control Register 0 TRDPOCR0 11111000b
0146h T imer RD Counter 0 TRD0 00h
0147h 00h
0148h Ti mer RD General Register A0 TRDGRA0 FFh
0149h FFh
014Ah Timer RD General Register B0 TRDGRB0 FFh
014Bh FFh
014Ch Timer RD General Register C0 TRDGRC0 FFh
014Dh FFh
014Eh Timer RD General Register D0 TRDGRD0 FFh
014Fh FFh
0150h Timer RD Control Register 1 TRDCR1 00h
0151h Timer RD I/O Control Register A1 TRDIORA1 10001000b
0152h Timer RD I/O Control Register C1 TRDIORC1 10001000b
0153h Timer RD Status Register 1 TRDSR1 11000000b
0154h T i mer RD Interrupt Enable Register 1 TRDIER1 11100000b
0155h T i mer RD PWM Mode Output Level Control Register 1 TRDPOCR1 11111000b
0156h T imer RD Counter 1 TRD1 00h
0157h 00h
0158h Ti mer RD General Register A1 TRDGRA1 FFh
0159h FFh
015Ah Timer RD General Register B1 TRDGRB1 FFh
015Bh FFh
015Ch Timer RD General Register C1 TRDGRC1 FFh
015Dh FFh
015Eh Timer RD General Register D1 TRDGRD1 FFh
015Fh FFh
0160h UART2 Transmit/Receive Mode Register U2MR 00h
0161h UART2 Bit Rate Register U2BRG XXh
0162h UART2 Transmit Buffer Register U2TB XXh
0163h XXh
0164h UART2 Transmit/Receive Control Register 0 U2C0 00001000b
0165h UART2 Transmit/Receive Control Register 1 U2C1 00000010b
0166h UART2 Receive Buffer Register U2RB XXh
0167h XXh
0168h
0169h
016Ah
016Bh
016Ch
016Dh
016Eh
016Fh
0170h
0171h
0172h
0173h
0174h
0175h
0176h
0177h
0178h
0179h
017Ah
017Bh
017Ch
017Dh
017Eh
017Fh
R8C/2K Group, R8C/2L Group 4. S pecial Function Registers (SFRs)
Rev.1.10 Dec 21, 2007 Page 23 of 45
REJ03B0219-0110
Table 4.7 SFR Information (7)(1)
X: Undefined
NOTES:
1. The blank regions are reserved. Do not access locations in these regions.
2. The OFS register cannot be changed by a pr ogram. Use a flash programmer to write to it.
Address Register Symbol After reset
0180h
0181h
0182h
0183h
0184h
0185h
0186h
0187h
0188h
0189h
018Ah
018Bh
018Ch
018Dh
018Eh
018Fh
0190h
0191h
0192h
0193h
0194h
0195h
0196h
0197h
0198h
0199h
019Ah
019Bh
019Ch
019Dh
019Eh
019Fh
01A0h
01A1h
01A2h
01A3h
01A4h
01A5h
01A6h
01A7h
01A8h
01A9h
01AAh
01ABh
01ACh
01ADh
01AEh
01AFh
01B0h
01B1h
01B2h
01B3h Flash Memory Control Register 4 FMR4 01000000b
01B4h
01B5h Flash Memory Control Register 1 FMR1 1000000Xb
01B6h
01B7h Flash Memory Control Register 0 FMR0 00000001b
01B8h
01B9h
01BAh
01BBh
01BCh
01BDh
01BEh
01BFh
FFFFh Option Function Select Register OFS (Note 2)
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 24 of 45
REJ03B0219-0110
5. Electrical Characteristics
Table 5.1 Absolute Maximum Rat ings
Symbol Parameter Condition Rated Value Unit
VCC/AVCC Supply voltage 0.3 to 6.5 V
VIInput voltage 0.3 to VCC + 0.3 V
VOOutput voltage 0.3 to VCC + 0.3 V
PdPower dissipation Topr = 25°C500mW
Topr Operating ambient temperature 20 to 85 (N version) /
40 to 85 (D version) °C
Tstg Storage temperature 65 to 150 °C
The electrical ch aracteristics of N ver sion (Topr = –20°C to 85°C) and D version (Topr = –40°C to 85°C) are
listed below.
Please contact Renesas Technology sales offices for the electrical characteristics in the Y version (Topr =
–20°C to 105°C).
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 25 of 45
REJ03B0219-0110
NOTES:
1. VCC = 2.2 to 5.5 V at Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
2. The average output current indicates the average value of current measured during 100 ms.
Table 5.2 Recommended Operating Conditions
Symbol Parameter Conditions Standard Unit
Min. Typ. Max.
VCC Supply voltage 2.2 5.5 V
AVCC Supply voltage 2.7 5.5
VSS/AVSS Supply voltage 0V
VIH Input “H” voltage 0.8 VCC VCC V
VIL Input “L” voltage 0 0.2 VCC V
IOH(sum) Peak sum output
“H” current Sum of all pins IOH(peak) −−160 mA
IOH(sum) Average sum
output “H” current Sum of all pins IOH(avg) −−80 mA
IOH(peak) Peak output “H”
current Except P2_0 to P2_7 −−10 mA
P2_0 to P2_7 −−40 mA
IOH(avg) Average output
“H” current Except P2_0 to P2_7 −−5mA
P2_0 to P2_7 −−20 mA
IOL(sum) Peak sum output
“L” currents Sum of all pins IOL(peak) −−160 mA
IOL(sum) Average sum
output “L”
currents
Sum of all pins IOL(avg) −−80 mA
IOL(peak) Peak output “L”
currents Except P2_0 to P2_7 −−10 mA
P2_0 to P2_7 −−40 mA
IOL(avg) Average output
“L” current Except P2_0 to P2_7 −−5mA
P2_0 to P2_7 −−20 mA
f(XIN) XIN clock input oscillation frequency 3.0 V VCC 5.5 V 0 20 MHz
2.7 V VCC < 3.0 V 0 10 MHz
2.2 V VCC < 2.7 V 0 5MHz
System clock OCD2 = 0
XlN clock selected 3.0 V VCC 5.5 V 0 20 MHz
2.7 V VCC < 3.0 V 0 10 MHz
2.2 V VCC < 2.7 V 0 5MHz
OCD2 = 1
On-chip oscillator clock
selected
FRA01 = 0
Low-speed on-chip
oscillator clock selected
125 kHz
FRA01 = 1
High-speed on-chip
oscillator clock selected
3.0 V VCC 5.5 V
−−20 MHz
FRA01 = 1
High-speed on-chip
oscillator clock selected
2.7 V VCC 5.5 V
−−10 MHz
FRA01 = 1
High-speed on-chip
oscillator clock selected
2.2 V VCC 5.5 V
−−5MHz
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 26 of 45
REJ03B0219-0110
NOTES:
1. AVCC = 2.7 to 5.5 V at Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
2. When the analog input voltage is over the reference voltage, the A/D conversion result will be 3FFh in 10-bit mode and FFh in
8-bit mode.
Figure 5.1 Ports P0 to P4 Timing Measurement Circuit
Table 5.3 A/D Converter Characteristics
Symbol Parameter Conditions Standard Unit
Min. Typ. Max.
Resolution Vref = AVCC −−10 Bits
Absolute
accuracy 10-bit mode φAD = 10 MHz, Vref = AVCC = 5.0 V −−±3 LSB
8-bit mode φAD = 10 MHz, Vref = AVCC = 5.0 V −−±2 LSB
10-bit mode φAD = 10 MHz, Vref = AVCC = 3.3 V −−±5 LSB
8-bit mode φAD = 10 MHz, Vref = AVCC = 3.3 V −−±2 LSB
Rladder Resistor ladder Vref = AVCC 10 40 k
tconv Conversion time 10-bit mode φAD = 10 MHz, Vref = AVCC = 5.0 V 3.3 −−µs
8-bit mode φAD = 10 MHz, Vref = AVCC = 5.0 V 2.8 −−µs
Vref Reference voltage 2.2 AVCC V
VIA Analog input voltage(2) 0AVCC V
A/D operating
clock frequency Without sample and hold Vref = AVCC = 2.7 to 5.5 V 0.25 10 MHz
With sample and hold Vref = AVCC = 2.7 to 5.5 V 1 10 MHz
P0
P1
P2
P3
P4
30pF
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 27 of 45
REJ03B0219-0110
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = 0 to 60°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as p ossible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.4 Flash Memory (Program ROM) Electrical Characteristics
Symbol Parameter Conditions Standard Unit
Min. Typ. Max.
Program/erase endurance(2) R8C/2K Group 100(3) −−times
R8C/2L Group 1,000(3) −−times
Byte program time 50 400 µs
Block erase time 0.4 9 s
td(SR-SUS) Time delay from suspend request until
suspend −−97+CPU clock
× 6 cycles µs
Interval from erase start/restart until
following suspend request 650 −−µs
Interval from program start/restart until
following suspend request 0−−ns
T ime from suspend until program/erase
restart −−3+CPU clo c k
× 4 cycles µs
Program, erase voltage 2.7 5.5 V
Read voltage 2.2 5.5 V
Program, erase temperature 0 60 °C
Data hold time(7) Ambient temperature = 55°C20 −−year
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 28 of 45
REJ03B0219-0110
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. S tandard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
is the same as that in program ROM.
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as p ossible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. 40°C for D version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.5 Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)
Symbol Parameter Conditions Standard Unit
Min. Typ. Max.
Program/erase endurance(2) 10,000(3) −−times
Byte program time
(program/erase endurance 1,000 times) 50 400 µs
Byte program time
(program/erase endurance > 1,000 times) 65 −µs
Block erase time
(program/erase endurance 1,000 times) 0.2 9 s
Block erase time
(program/erase endurance > 1,000 times) 0.3 s
td(SR-SUS) Time delay from suspend request until
suspend −−97+CPU clock
× 6 cycles µs
Interval from erase start/restart until
following suspend request 650 −−µs
Interval from program start/restart until
following suspend request 0−−ns
Time from suspend until program/erase
restart −−3+CPU clock
× 4 cycles µs
Program, erase voltage 2.7 5.5 V
Read voltage 2.2 5.5 V
Program, erase temperature 20(8) 85 °C
Data hold time(9) Ambient temperature = 55 °C20 −−year
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 29 of 45
REJ03B0219-0110
Figure 5.2 Time delay until Suspend
NOTES:
1. The measurement condition is VCC = 2.2 to 5.5 V and Topr = 20 to 85°C (N version) / 40 to 85°C (D version).
2. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA25 bit in the VCA2
register to 0.
NOTES:
1. The measurement condition is VCC = 2.2 to 5.5 V and Topr = 20 to 85°C (N version) / 40 to 85°C (D version).
2. Time until the voltage monitor 1 interrupt request is generated after the voltage passes Vdet1.
3. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA26 bit in the VCA2
register to 0.
4. This parameter shows the voltage detection level when the power supply drops.
The voltage detection level when the power supply rises is higher than the voltage detection level when the power supply
drops by approximately 0.1 V.
NOTES:
1. The measurement condition is VCC = 2.2 to 5.5 V and Topr = 20 to 85°C (N version) / 40 to 85°C (D version).
2. Time until the voltage monitor 2 interrupt request is generated after the voltage passes Vdet2.
3. Necessary time until the voltage detection circuit operates after setting to 1 again after setting the VCA27 bit in the VCA2
register to 0.
Table 5.6 Voltage Detecti on 0 Circ ui t Elec t ri cal C hara ct eris ti cs
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
Vdet0 Voltage detection level 2.2 2.3 2.4 V
Voltage detection circuit self power consumption VCA25 = 1, VCC = 5.0 V 0.9 −µA
td(E-A) Waiting time until voltage detection circuit operation
starts(2) −−300 µs
Vccmin MCU operating voltage minimum value 2.2 −−V
Table 5.7 Voltage Detecti on 1 Circ ui t Elec t ri cal C hara ct eris ti cs
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
Vdet1 Voltage detection level(4) 2.70 2.85 3.00 V
Voltage monitor 1 interrupt request generation time(2) 40 −µs
Voltage detection circuit self power consumption VCA26 = 1, VCC = 5.0 V 0.6 −µA
td(E-A) Waiting time until voltage detection circuit operation
starts(3) −−100 µs
Table 5.8 Voltage Detecti on 2 Circ ui t Elec t ri cal C hara ct eris ti cs
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
Vdet2 Voltage detection level 3.3 3.6 3.9 V
Voltage monitor 2 interrupt request generation time(2) 40 −µs
Voltage detection circuit self power consumption VCA27 = 1, VCC = 5.0 V 0.6 −µA
td(E-A) Waiting time until voltage detection circuit operation
starts(3) −−100 µs
FMR46
Suspend request
(maskable in terrupt request)
Fixed time
td(SR-SUS)
Clock-dependent
time Access restart
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 30 of 45
REJ03B0219-0110
NOTES:
1. The measurement condition is Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
2. This condition (external power VCC rise gradient) does not apply if VCC 1.0 V.
3. To use the power-on reset function, enable voltage monitor 0 reset by setting the LVD0ON bit in the OFS register to 0, the
VW0C0 and VW0C6 bits in the VW0C register to 1 respectively, and the VCA25 bit in the VCA2 register to 1.
4. tw(por1) indicates the duration the externa l power VCC must be held below the effective voltage (Vpor1) to enable a power on
reset. When turning on the power for the first time, maintain tw(por1) for 30 s or more if 20°C Topr 85°C, maintain tw(por1) for
3,000 s or more if 40°C Topr < 20°C.
Figure 5.3 Reset Circuit Electrical Characteristics
Table 5.9 Power-on Reset Circuit, Voltage Monitor 0 Reset Electrical Characteristics(3)
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
Vpor1 Power-on reset valid voltage(4) −−0.1 V
Vpor2 Power-on reset or voltage monitor 0 reset valid
voltage 0Vdet0 V
trth External power VCC rise gradient(2) 20 −−mV/msec
NOTES:
1. Wh en using the voltage monitor 0 digital filter, ensure that t he voltage is wit hin the MCU operation voltage
range (2.2 V or above) during the samplin g time.
2. The sampling cl ock can be selected. Ref er to 6. Voltage Detection Circuit for details.
3. Vdet0 indi cates the voltage detection level of the voltage det ection 0 circuit. Refer to 6. Voltage Detection
Circuit for details.
Vdet0(3)
Vpor1
Internal
reset signal
(“L” valid)
tw(por1) Sampling time(1, 2)
Vdet0(3)
1
fOCO-S × 32 1
fOCO-S × 32
Vpor2
2.2V
External
Power VCC trth trth
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 31 of 45
REJ03B0219-0110
NOTES:
1. VCC = 2.2 to 5.5 V, Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
2. These standard values show when the FRA1 register value after reset is assumed.
3. These standard values show when the corrected value of the FRA6 register is written to the FRA1 register.
4. This enables the setting errors of bit rates such as 9600 bps and 38400 bps to be 0% when the serial interface is used in
UART mode.
NOTE:
1. VCC = 2.2 to 5.5 V, Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
NOTES:
1. The measurement condition is VCC = 2.2 to 5.5 V and Topr = 25°C.
2. Waiting time until the internal power supply generation circuit stabilizes during power-on.
3. Time until system clock supply starts after the interrupt is acknowledged to exit stop mode.
Table 5.10 High-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
fOCO40M High-speed on-chip oscillator frequency
temperature • supply voltage dependence VCC = 2.7 V to 5.5 V
20°C Topr 85°C(2) 39.2 40 40.8 MHz
VCC = 2.7 V to 5.5 V
40°C Topr 85°C(2) 39.0 40 41.0 MHz
VCC = 2.2 V to 5.5 V
20°C Topr 85°C(3) 35.2 40 44.8 MHz
VCC = 2.2 V to 5.5 V
40°C Topr 85°C(3) 34.0 40 46.0 MHz
High-speed on-chip oscillator frequency when
correction value in FRA7 register is written to
FRA1 register(4)
VCC = 5.0 V, Topr = 25°C36.864 MHz
VCC = 2.7 V to 5.5 V
20°C Topr 85°C3% 3% %
Value in FRA1 register after reset 08h F7h
Oscillation frequency adjustment unit of high-
speed on-chip oscillator Adjust FRA1 register
(value after reset) to -1 +0.3 MHz
Oscillation stability time VCC = 5.0 V, Topr = 25°C10 100 µs
Self power consumption at oscillation VCC = 5.0 V, Topr = 25°C550 −µA
Table 5.11 Low-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
fOCO-S Low-speed on-chip oscillator frequency 30 125 250 kHz
Oscillation stability time 10 100 µs
Self power consumption at oscillation VCC = 5.0 V, Topr = 25°C15 −µA
Table 5.12 Power Supply Circuit Timing Characteristics
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
td(P-R) Time for internal power supply stabilization during
power-on(2) 12000 µs
td(R-S) STOP exit time(3) −−150 µs
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 32 of 45
REJ03B0219-0110
NOTE:
1. VCC = 4.2 to 5.5 V at Topr = 20 to 85°C (N version) / 40 to 85°C (D version), f(XIN) = 20 MHz, unless otherwise specified.
Table 5.13 Electrical Characteristics (1) [V CC = 5 V]
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
VOH Output “H”
voltage Except P2_0 to P2_7,
XOUT IOH = 5 mA VCC 2.0 VCC V
IOH = 200 µAVCC 0.5 VCC V
P2_0 to P2_7 Drive capacity HIGH IOH = 20 mA VCC 2.0 VCC V
Drive capacity LOW IOH = 5 mA VCC 2.0 VCC V
XOUT Drive capacity HIGH IOH = 1 mA VCC 2.0 VCC V
Drive capacity LOW IOH = 500 µAVCC 2.0 VCC V
VOL Output “L” voltage Except P2_0 to P2_7,
XOUT IOL = 5 mA −−2.0 V
IOL = 200 µA−−0.45 V
P2_0 to P2_7 Drive capacity HIGH IOL = 20 mA −−2.0 V
Drive capacity LOW IOL = 5 mA −−2.0 V
XOUT Drive capacity HIGH IOL = 1 mA −−2.0 V
Drive capacity LOW IOL = 500 µA−−2.0 V
VT+-VT- Hysteresis INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, RXD0, RXD2,
CLK0, CLK2
0.1 0.5 V
RESET 0.1 1.0 V
IIH Input “H” current VI = 5 V, VCC = 5 V −−5.0 µA
IIL Input “L” current VI = 0 V, VCC = 5 V −−5.0 µA
RPULLUP Pull-up resistance VI = 0 V, VCC = 5 V 30 50 167 k
RfXIN Feedback
resistance XIN 1.0 M
VRAM RAM hold voltage During stop mode 1.8 −−V
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 33 of 45
REJ03B0219-0110
Table 5.14 Electrical Characteristics (2) [Vcc = 5 V]
(Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.)
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
ICC Power supply
current
(V
CC
= 3.3 to 5.5 V)
Single-chip mode,
output pins are
open, other pins
are VSS
High-speed
clock mode XIN = 20 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
10 17 mA
XIN = 16 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
915mA
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
6mA
XIN = 20 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
5mA
XIN = 16 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
4mA
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
2.5 mA
High-speed
on-chip
oscillator mode
XIN clock off
High-speed on-chip oscillator on fO CO = 20 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
10 15 mA
XIN clock off
High-speed on-chip oscillator on fO CO = 20 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
4mA
XIN clock off
High-speed on-chip oscillator on fO CO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
5.5 10 mA
XIN clock off
High-speed on-chip oscillator on fO CO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
2.5 mA
Low-speed
on-chip
oscillator mode
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8, FMR47 = 1
130 300 µA
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 34 of 45
REJ03B0219-0110
Table 5.15 Electrical Characteristics (3) [Vcc = 5 V]
(Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.)
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
ICC Power supply
current
(V
CC
= 3.3 to 5.5 V)
Single-chip mode,
output pins are
open, other pins
are VSS
Wait mode XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock operation
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
25 75 µA
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Periphe r al clock off
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
23 60 µA
Stop mode X IN clock off, Topr = 25°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Periphe r al clock off
VCA27 = VCA26 = VCA25 = 0
0.8 3.0 µA
XIN clock off, Topr = 85°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Periphe r al clock off
VCA27 = VCA26 = VCA25 = 0
1.2 −µA
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 35 of 45
REJ03B0219-0110
Timing Requirements
(Unless Otherwise Specified: VCC = 5 V, VSS = 0 V at Topr = 25°C) [VCC = 5 V]
Figure 5.4 XIN Input Timing Diagram when VCC = 5 V
Figure 5.5 TRAIO Input Ti ming Diagram when VCC = 5 V
Table 5.16 XIN Input
Symbol Parameter Standard Unit
Min. Max.
tc(XIN) XIN input cycle time 50 ns
tWH(XIN) XIN input “H” width 25 ns
tWL(XIN) XIN input “L” width 25 ns
Table 5.17 TRAIO Input
Symbol Parameter Standard Unit
Min. Max.
tc(TRAIO) TRAIO input cycle time 100 ns
tWH(TRAIO) TRAIO input “H” width 40 ns
tWL(TRAIO) TRAIO input “L” width 40 ns
XIN input
tWH(XIN)
tC(XIN)
tWL(XIN)
VCC = 5 V
TRAIO input
VCC = 5 V
tC(TRAIO)
tWL(TRAIO)
tWH(TRAIO)
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 36 of 45
REJ03B0219-0110
i = 0, 2
Figure 5.6 Serial Interface Timing Diagram when VCC = 5 V
NOTES:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
Figure 5.7 External Interrupt INTi Input Timing Diagram when VCC = 5 V
Table 5.18 Serial Interface
Symbol Parameter Standard Unit
Min. Max.
tc(CK) CLKi input cycle time 200 ns
tW(CKH) CLKi input “H” width 100 ns
tW(CKL) CLKi input “L” width 100 ns
td(C-Q) TXDi output delay time 50 ns
th(C-Q) TXDi hold time 0 ns
tsu(D-C) RXDi input setup time 50 ns
th(C-D) RXDi input hold time 90 ns
Table 5.19 External Interrupt INTi (i = 0, 1, 3) Input
Symbol Parameter Standard Unit
Min. Max.
tW(INH) INTi input “H” width 250(1) ns
tW(INL) INTi input “L” width 250(2) ns
tW(CKH)
tC(CK)
tW(CKL) th(C-Q)
th(C-D)
tsu(D-C)td(C-Q)
CLKi
TXDi
RXDi
i = 0, 2
VCC = 5 V
INTi input
tW(INL)
tW(INH)
i = 0, 1, 3
VCC = 5 V
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 37 of 45
REJ03B0219-0110
NOTE:
1. VCC =2.7 to 3.3 V at Topr = 20 to 85°C (N version) / 40 to 85°C (D version), f(XIN) = 10 MHz, unless otherwise specified.
Table 5.20 Electrical Characteristics (1) [V CC = 3 V]
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
VOH Output “H” voltage Except P2_0 to P2_7,
XOUT IOH = 1 mA VCC 0.5 VCC V
P2_0 to P2_7 Drive capacity
HIGH IOH = 5 mA VCC 0.5 VCC V
Drive capacity
LOW IOH = 1 mA VCC 0.5 VCC V
XOUT Drive capacity
HIGH IOH = 0.1 mA VCC 0.5 VCC V
Drive capacity
LOW IOH = 50 µAVCC 0.5 VCC V
VOL Output “L” voltage Except P2_0 to P2_7,
XOUT IOL = 1 mA −−0.5 V
P2_0 to P2_7 Drive capacity
HIGH IOL = 5 mA −−0.5 V
Drive capacity
LOW IOL = 1 mA −−0.5 V
XOUT Drive capacity
HIGH IOL = 0.1 mA −−0.5 V
Drive capacity
LOW IOL = 50 µA−−0.5 V
VT+-VT- Hysteresis INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, RXD0, RXD2,
CLK0, CLK2
0.1 0.3 V
RESET 0.1 0.4 V
IIH Input “H” current VI = 3 V, VCC = 3 V −−4.0 µA
IIL Input “L” current VI = 0 V, VCC = 3 V −−4.0 µA
RPULLUP Pull-up resistance VI = 0 V, VCC = 3 V 66 160 500 k
RfXIN Feedback resistance XIN 3.0 M
VRAM RAM hold voltage During stop mode 1.8 −−V
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 38 of 45
REJ03B0219-0110
Table 5.21 Electrical Characteristics (2) [Vcc = 3 V]
(Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.)
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
ICC Power supply current
(VCC = 2.7 to 3.3 V)
Single-chip mode,
output pins are open,
other pins are VSS
High-speed
clock mode XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
6mA
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
2mA
High-speed
on-chip
oscillator
mode
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
59mA
XIN clock off
High-speed on-chip oscillator on fOCO = 10 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
2mA
Low-speed
on-chip
oscillator
mode
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8, FMR47 = 1
130 300 µA
Wait mode XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock operation
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
25 70 µA
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
23 55 µA
Stop mode XIN clock off, Topr = 25°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
0.7 3.0 µA
XIN clock off, Topr = 85°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
1.1 −µA
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 39 of 45
REJ03B0219-0110
Timing requirements
(Unless Otherwise Specified: VCC = 3 V, VSS = 0 V at Topr = 25°C) [VCC = 3 V]
Figure 5.8 XIN Input Timing Diagram when VCC = 3 V
Figure 5.9 TRAIO Input Ti ming Diagram when VCC = 3 V
Table 5.22 XIN Input
Symbol Parameter Standard Unit
Min. Max.
tc(XIN) XIN input cycle time 100 ns
tWH(XIN) XIN input “H” width 40 ns
tWL(XIN) XIN input “L” width 40 ns
Table 5.23 TRAIO Input
Symbol Parameter Standard Unit
Min. Max.
tc(TRAIO) TRAIO input cycle time 300 ns
tWH(TRAIO) TRAIO input “H” width 120 ns
tWL(TRAIO) TRAIO input “L” width 120 ns
XIN input
tWH(XIN)
tC(XIN)
tWL(XIN)
VCC = 3 V
TRAIO input
VCC = 3 V
tC(TRAIO)
tWL(TRAIO)
tWH(TRAIO)
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 40 of 45
REJ03B0219-0110
i = 0, 2
Figure 5.10 Serial Interface Ti ming Diagram when VCC = 3 V
NOTES:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
Figure 5.11 External Interrupt INTi Input Timing Diagram when VCC = 3 V
Table 5.24 Serial Interface
Symbol Parameter Standard Unit
Min. Max.
tc(CK) CLKi input cycle time 300 ns
tW(CKH) CLKi input “H” width 150 ns
tW(CKL) CLKi Input “L” width 150 ns
td(C-Q) TXDi output delay time 80 ns
th(C-Q) TXDi hold time 0 ns
tsu(D-C) RXDi input setup time 70 ns
th(C-D) RXDi input hold time 90 ns
Table 5.25 External Interrupt INTi (i = 0, 1, 3) Input
Symbol Parameter Standard Unit
Min. Max.
tW(INH) INTi input “H” width 380(1) ns
tW(INL) INTi input “L” width 380(2) ns
tW(CKH)
tC(CK)
tW(CKL) th(C-Q)
th(C-D)
tsu(D-C)td(C-Q)
CLKi
TXDi
RXDi
VCC = 3 V
i = 0, 2
INTi input
tW(INL)
tW(INH)
VCC = 3 V
i = 0, 1, 3
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 41 of 45
REJ03B0219-0110
NOTE:
1. VCC = 2.2 V at Topr = 20 to 85°C (N version) / 40 to 85°C (D version), f(XIN) = 5 MHz, unless otherwise specified.
Table 5.26 Electrical Characteristics (1) [V CC = 2.2 V]
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
VOH Output “H” voltage Except P2_0 to P2_7,
XOUT IOH = 1 mA VCC 0.5 VCC V
P2_0 to P2_7 Drive capacity
HIGH IOH = 2 mA VCC 0.5 VCC V
Drive capacity
LOW IOH = 1 mA VCC 0.5 VCC V
XOUT Drive capacity
HIGH IOH = 0.1 mA VCC 0.5 VCC V
Drive capacity
LOW IOH = 50 µAVCC 0.5 VCC V
VOL Output “L” voltage Except P2_0 to P2_7,
XOUT IOL = 1 mA −−0.5 V
P2_0 to P2_7 Drive capacity
HIGH IOL = 2 mA −−0.5 V
Drive capacity
LOW IOL = 1 mA −−0.5 V
XOUT Drive capacity
HIGH IOL = 0.1 mA −−0.5 V
Drive capacity
LOW IOL = 50 µA−−0.5 V
VT+-VT- Hysteresis INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, RXD0, RXD2,
CLK0, CLK2
0.05 0.3 V
RESET 0.05 0.15 V
IIH Input “H” current VI = 2.2 V −−4.0 µA
IIL Input “L” current VI = 0 V −−4.0 µA
RPULLUP Pull-up resistance VI = 0 V 100 200 600 k
RfXIN Feedback resistance XIN 5M
VRAM RAM hold voltage During stop mode 1.8 −−V
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 42 of 45
REJ03B0219-0110
Table 5.27 Electrical Characteristics (2) [Vcc = 2.2 V]
(Topr = 20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.)
Symbol Parameter Condition Standard Unit
Min. Typ. Max.
ICC Power supply current
(VCC = 2.2 to 2.7 V)
Single-chip mode,
output pins are open,
other pins are VSS
High-speed
clock mode XIN = 5 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
3.5 mA
XIN = 5 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
1.5 mA
High-speed
on-chip
oscillator
mode
XIN clock off
High-speed on-chip oscillator on fOCO = 5 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
3.5 mA
XIN clock off
High-speed on-chip oscillator on fOCO = 5 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
1.5 mA
Low-speed
on-chip
oscillator
mode
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8, FMR47 = 1
100 230 µA
Wait mode XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock operation
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
22 60 µA
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
VCA20 = 1
20 55 µA
Stop mode XIN clock off, Topr = 25°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
0.7 3.0 µA
XIN clock off, Topr = 85°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
1.1 −µA
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 43 of 45
REJ03B0219-0110
Timing requirements
(Unless Otherwise Specified: VCC = 2.2 V, VSS = 0 V at Topr = 25°C) [VCC = 2.2 V]
Figure 5.12 XIN Input Timing Diagram when VCC = 2.2 V
Figure 5.13 TRAIO Input Timing Diagram when VCC = 2.2 V
Table 5.28 XIN Input
Symbol Parameter Standard Unit
Min. Max.
tc(XIN) XIN input cycle time 200 ns
tWH(XIN) XIN input “H” width 90 ns
tWL(XIN) XIN input “L” width 90 ns
Table 5.29 TRAIO Input
Symbol Parameter Standard Unit
Min. Max.
tc(TRAIO) TRAIO input cycle time 500 ns
tWH(TRAIO) TRAIO input “H” width 200 ns
tWL(TRAIO) TRAIO input “L” width 200 ns
XIN input
tWH(XIN)
tC(XIN)
tWL(XIN)
VCC = 2.2 V
TRAIO input
tC(TRAIO)
tWL(TRAIO)
tWH(TRAIO)
VCC = 2.2 V
R8C/2K Group, R8C/2L Group 5. Electrical Characteristics
Rev.1.10 Dec 21, 2007 Page 44 of 45
REJ03B0219-0110
i = 0, 2
Figure 5.14 Serial Interface Ti ming Diagram when VCC = 2.2 V
NOTES:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
Figure 5.15 External Interrupt INTi Input Timing Diagram when VCC = 2.2 V
Table 5.30 Serial Interface
Symbol Parameter Standard Unit
Min. Max.
tc(CK) CLKi input cycle time 800 ns
tW(CKH) CLKi input “H” width 400 ns
tW(CKL) CLKi input “L” width 400 ns
td(C-Q) TXDi output delay time 200 ns
th(C-Q) TXDi hold time 0 ns
tsu(D-C) RXDi input setup time 150 ns
th(C-D) RXDi input hold time 90 ns
Table 5.31 External Interrupt INTi (i = 0, 1, 3) Input
Symbol Parameter Standard Unit
Min. Max.
tW(INH) INTi input “H” width 1000(1) ns
tW(INL) INTi input “L” width 1000(2) ns
tW(CKH)
tC(CK)
tW(CKL) th(C-Q)
th(C-D)
tsu(D-C)td(C-Q)
CLKi
TXDi
RXDi
VCC = 2.2 V
i = 0, 2
INTi input
tW(INL)
tW(INH)
VCC = 2.2 V
i = 0, 1, 3
R8C/2K Group, R8C/2L Group Package Dimensions
Rev.1.10 Dec 21, 2007 Page 45 of 45
REJ03B0219-0110
Package Dimensions
Diagrams showing the latest package dimensions and mounting information are available in the “Packages” section of
the Renesas Technology website.
2.
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
NOTE)
DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
y
Index mark
*3
F
32
25
24 17
16
9
81
*1
*2
x
b
p
e
H
E
E
D
H
D
Z
D
Z
E
Detail F
L
1
L
A
c
A
2
A
1
Previous CodeJEITA Package Code RENESAS Code
PLQP0032GB-A 32P6U-A
MASS[Typ.]
0.2gP-LQFP32-7x7-0.80
1.0
0.125
0.35
0.7
0.7
0.20
0.20
0.145
0.09
0.420.370.32
MaxNomMin
Dimension in Millimeters
Symbol
Reference
7.17.06.9
D
7.17.06.9
E
1.4
A
2
9.29.08.8
9.29.08.8
1.7
A
0.20.1
0
0.70.50.3
L
x
c
0.8
e
0.10
y
H
D
H
E
A
1
b
p
b
1
c
1
Z
D
Z
E
L
1
Terminal cross section
b
1
c
1
bp
c
C - 1
REVISION HISTORY R8C/2K Group, R8C/2L Group Datasheet
Rev. Date Description
Page Summary
0.10 Jul 20, 2007 First Edition issued
1.00 Nov 07, 2007 All pages Preliminary” deleted
3, 5 Table 1.2, Table 1.4 ;
Current consumption: “TBD” “Typ. 10 mA” “Typ. 6 mA” “Typ. 2.0 µA”
“Typ. 0.7 µA” revised
6, 7 Table 1.5, Table 1.6 revised
Figure 1.1, Figure 1.2; ROM number “XXX” added, NOTE1 added
20 Table 4.4 “005F h” “006Fh” “007F h” “008Fh” added
24 Table 5.2 NOTE2 r ev ised
32, 33 Table 5.14, Table 5.15 revised
37, 41 Table 5.21, Table 5.27 revised
1.10 Dec 21, 2007 3, 5 Table 1.2, Table 1.4; revised, NOTE2 added
6, 7 Figure 1.1, Figure 1.2; “Y: Operating ambient ....”, NOTE1 added
15, 16 Figure 3.1, Figure 3.2; “Expanded area” deleted
17 Table 4.1 “002Ch” added, “003Bh” “003Ch” “003Dh” deleted
20 Table 4.4 “00D4h ” “00D6h” revised
22 Table 4.6 “0143 h” revised
24 5. “The electrical characteristics ....” added
31 Table 5.10 Symbol “fOCO40M”: Paramete r added, NOTE4 added
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R8C/2K Group, R8C/2L Group Datasheet
REVISION HISTORY
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