LITE-ON SEMICONDUCTOR RS3AB thru RS3MB REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes SURFACE MOUNT FAST RECOVERY RECTIFIERS FEATURES SMB Fast switching for high efficiency For surface mounted applications Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0 SMB A B C G MECHANICAL DATA H D F E Case : Molded plastic Polarity : Color band denotes cathode Weight : 0.003 ounces, 0.093 grams DIM. MIN. MAX. A 4.06 4.57 B 3.30 3.94 C 1.96 2.21 D 0.15 0.31 E 5.21 5.59 F 0.05 0.20 G 2.01 2.62 H 0.76 1.52 All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL RS3AB CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current VRRM VRMS VDC 50 35 50 RS3BB RS3DB RS3GB RS3JB RS3KB 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 RS3MB UNIT 1000 700 1000 V V V @TL =75 C I(AV) 3.0 A Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC METHOD) IFSM 100 A VF 1.3 V IR 5.0 250 uA Maximum forward Voltage at 3.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =125 C Maximum Reverse Recovery Time (Note 1) TRR 150 250 500 ns pF CJ 50 Typical Thermal Resistance (Note 3) R0JL 10 C/W Typical Thermal Resistance R0JA 50 C/W TJ -55 to +150 C TSTG -55 to +150 Typical Junction Capacitance (Note 2) Operating Temperature Range Storage Temperature Range NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A. 2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3.Thermal Resistance Junction to Lead. C REV. 2, 01-Dec-2000, KSEB03 RATING AND CHARACTERISTIC CURVES RS3AB thru RS3MB FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 3.0 100 2.5 2.0 1.5 1.0 0.5 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0 50 25 75 100 125 150 175 80 60 40 20 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 LEAD TEMPERATURE , C FIG.3 - TYPICAL FORWARD CHARACTERISTICS 20 10 50 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT, (uA) 10 INSTANTANEOUS FORWARD CURRENT, (A) 5 NUMBER OF CYCLES AT 60Hz 1.0 TJ = 25 C 0.1 PULSEWIDTH:300us TJ = 125 C 100 10 TJ = 25 C 1.0 0.1 .01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE , (VOLTS) 1.8 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) REV. 2, 01-Dec-2000, KSEB03