SK22 S210 1 of 2 © 2000 Won-Top Electronics
SK22 – S210
2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly B
! Low Power Loss, High Eff icienc y
! Surge Overload Rating to 50A Peak D
! For Use in Low Voltage Application A
! Guard Ring Die Construction F
! Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
! Case: Low Profile Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.093 grams (approx.)
Maximum Ratings and Electrical Characteristics @TA=25°C unl ess otherwise specified
Characteristic Symbol SK22 SK23 SK24 SK25 SK26 SK28 SK29 S210 Unit
Peak Repetit i ve Revers e Vol tage
Working Peak Reverse Vol tage
DC Blocking Voltage
VRRM
VRWM
VR20 30 40 50 60 80 90 100 V
RMS Reverse Vol tage VR(RMS) 14 21 28 35 42 56 64 71 V
Average Rectified Output Current @TL = 105°C IO2.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 50 A
Forward Voltage @IF = 2.0A VFM 0.55 0.70 0.85 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocki ng Voltage @TA = 100°C IRM 0.5
20
mA
Typical Therm al Resistance Junction to Ambient
(Note 1) RJA 75 K/W
Operating Tem perature Range Tj-65 to +125 °C
Storage Temperat ure Range TSTG -65 to +150 °C
Note: 1. Mounted on P.C. Board with 8.0mm2 copper pad areas
WTE
PO WER SEM IC OND UCTOR S
SMB/DO-214AA
Dim Min Max
A3.30 3.94
B4.06 4.70
C1.91 2.11
D0.152 0.305
E5.08 5.59
F2.13 2.44
G0.051 0.203
H0.76 1.27
All Dimensions in mm
SK22S210 2 of 2 © 2000 Won-Top Electronics
0.01
0.1
1.0
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
F
SK22 - SK24 SK25 - SK26
T-25ºC
j
I Pulse Width = 300 s
Fµ
15
30
45
60
0110 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
Fi
g
. 3 Max Non-Repetitive Peak Fwd Sur
g
e Current
NUMBER OF CYCLES AT 60 Hz
Single Half Sine-Wave
(JEDEC Method)
T = 150ºC
j
10
100
1000
0.1 1 10 100
C, JUNCTION CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25°C
f = 1 MHz
j
020 40 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
g
. 5 Typical Reverse Characteristics
T = 100ºC
j
T = 75ºC
j
T = 25ºC
j
100
10
1.0
0.1
0.01
0.001
0
1.0
2.0
25 50 75 100 125 150
I AVERAGE FORWARD CURRENT (A)
(AV),
T, LEAD TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
L
SK28 - S210