Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB Structure Silicon N-channel MOSFET Dimensions (Unit : mm) EMT3F Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. (3) (1) (2) Abbreviated symbol : KN Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) 2SK3019EB Inner circuit Taping TCL 3000 (3) 2 (1) 1 (1) Gate (2) Source (3) Drain Absolute maximum ratings (Ta = 25C) Symbol Parameter Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V 100 mA 400 150 mA mW Tch Tstg 150 55 to 150 C C Symbol Rth (ch-a)* Limits 833 Unit C / W Drain current Continuous ID Pulsed IDP *1 PD *2 Power dissipation Channel temperature Range of storage temperature (2) 1 ESD PROTECTION DIODE 2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a reference land. Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a reference land. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A Data Sheet 2SK3019EB Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 1 A Drain-source breakdown voltage V(BR)DSS Conditions VGS=20V, VDS=0V 30 - - V ID=10A, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V VGS (th) 0.8 - 1.5 V VDS=3V, ID=100A Static drain-source on-state resistance RDS (on)* - 5 8 - 7 13 Forward transfer admittance Zero gate voltage drain current Gate threshold voltage ID=10mA, VGS=4V ID=1mA, V GS=2.5V l Yfs l * 20 - - mS VDS=3V, ID=10mA Input capacitance Ciss - 13 - pF VDS=5V Output capacitance Coss - 9 - pF VGS=0V Reverse transfer capacitance Crss - 4 - pF f=1MHz Turn-on delay time td(on)* - 15 - ns VDD tr * - 35 - ns VGS=5V td(off)* - 80 80 - ns ns RL=500 RG=10 Rise time Turn-off delay time Fall time tf * 5V, I D=10mA *Pulsed www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Data Sheet 2SK3019EB Electrical characteristics curves 3V Ta=25C Pulsed 3.5V 0.1 2.5V 0.05 2V 10m 5m 2m Ta=125C 75C 25C -25C 1m 0.5m 3 4 0.1m 0 5 1 DRAIN-SOURCE VOLTAGE : VDS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 50 Ta=125C 75C 25C -25C 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 1 0.005 6 ID=10mA 4 3 2 0.2 0.5 0.1 0.05 100 125 150 CHANNEL TEMPERATURE : Tch (C) Fig.7 Static drain-source on-state resistance vs. channel temperature www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 75 100 125 150 10 5 ID=10mA ID=1mA 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static drain-source on-state resistance vs. gate-source voltage 200m VGS=0V Pulsed 100m 0.2 Ta=-25C 25C 75C 125C 0.02 0.01 0.005 0.001 0.0001 0.0002 75 0.1 VDS=3V Pulsed 0 -50 -25 50 0.05 0.5 0.002 25 0.02 50 Ta=25C Pulsed Fig.5 Static drain-source on-state resistance vs. drain current () 1 0 0.01 25 15 2 0.5 0.001 0.002 0 Fig.3 Gate threshold voltage vs. channel temperature 5 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () ID=100mA 5 0 -50 -25 CHANNEL TEMPERATURE : Tch (C) 10 VGS=4V Pulsed 7 0.5 DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current () 8 1 4 VGS=2.5V Pulsed Ta=125C 75C 25C -25C DRAIN CURRENT : ID (A) 9 1.5 Fig.2 Typical transfer characteristics VGS=4V Pulsed 20 VDS=3V ID=0.1mA Pulsed GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics 50 3 2 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 2 20m SOURCE CURRENT : IS (A) 1 50m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) 200m 0.15 50m 20m Ta=125C 75C 25C -25C 10m 5m 2m 1m 0.5m 0.2m 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A) Fig.8 Forward transfer admittance vs. drain current 3/5 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage () 2011.10 - Rev.A Data Sheet 2SK3019EB 100m 20m VGS=4V 10m 0V 5m 2m 1m 0.5m 1000 Ta=25C f=1MHZ VGS=0V 20 50m CAPACITANCE : C (pF) SOURCE CURRENT : IS (A) 50 Ta=25C Pulsed Ciss 10 5 Coss Crss 2 Ta=25C VDD=5V VGS=5V RG=10 Pulsed tf 500 SWITHING TIME : t (ns) 200m td(off) 200 100 50 20 tr td(on) 10 5 1 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Reverse drain current vs. source-drain voltage () www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0.5 0.1 0.2 0.5 1 2 5 10 20 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical capacitance vs. drain-source voltage 4/5 50 2 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.12 Switching characteristics 2011.10 - Rev.A Data Sheet 2SK3019EB Measurement circuits Pulse width VGS ID VDS RL 50% 10% D.U.T. RG 90% 50% 10% VGS VDS VDD 90% td(on) tr ton Fig.1-1 Switching Time Measurement Circuit 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A