Data Sheet
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2.5V Drive Nch MOSFET
2SK3019EB
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) High-speed switching.
2) Low voltage drive(2.5V drive).
3) Drive circuits can be simple.
4) Parallel use is easy.
Application
Switching
Packaging specifications Inner circuit
Package Taping
Code TCL
Basic ordering unit (pieces) 3000
2SK3019EB
Absolute maximum ratings (Ta = 25C)
Symbol Limits Unit
Drain-source voltage VDSS 30 V
Gate-source voltage VGSS 20 V
Continuous ID100 mA
Pulsed IDP 400 mA
Power dissipation PD150 mW
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a reference land.
Thermal resistance
Symbol Limits Unit
Channel to Ambient Rth (ch-a) 833 C / W
* Each terminal mounted on a reference land.
Parameter
Type
Drain current
Parameter
*2
*1
(1) Gate
(2) Source
(3) Drain
*
EMT3F
(1) (2)
(3)
Abbreviated symbol : KN
∗2
∗1
(3)
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
1/5 2011.10 - Rev.A
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Data Sheet
2SK3019EB 　
Electrical characteristics (Ta = 25C)
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --1AV
GS=20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 30 - - V ID=10A, VGS=0V
Zero gate voltage drain current IDSS --1AV
DS=30V, VGS=0V
Gate threshold voltage VGS (th) 0.8 - 1.5 V VDS=3V, ID=100A
-58 I
D=10mA, VGS=4V
- 7 13 ID=1mA, VGS=2.5V
Forward transfer admittance l Yfs l20 - -mSV
DS=3V, ID=10mA
Input capacitance Ciss - 13 - pF VDS=5V
Output capacitance Coss -9-pFV
GS=0V
Reverse transfer capacitance Crss - 4 - pF f=1MHz
Turn-on delay time td(on) - 15 - ns VDD 5V, ID=10mA
Rise time tr- 35 - ns VGS=5V
Turn-off delay time td(off) - 80 - ns RL=500
Fall time tf- 80 - ns RG=10
*Pulsed
Conditions
Parameter
Static drain-source on-state
resistance RDS (on)
*
*
*
*
*
*
2/5 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SK3019EB 　
Electrical characteristics curves
01234
5
0
0.05
0.1
0.15
DRAIN CURRENT : I
D
(A)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
3V
3.5V
2.5V
V
GS
=
1.5V
4V
2V
Fig.1 Typical output characteristics
Ta=25°C
Pulsed
0
4
0.1m
100m
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
Ta=125°C
75°C
25°C
−25°C
VDS=3V
Pulsed
Fig.2 Typical transfer characteristic
s
−50 0
0
1
1.5
2
GATE THRESHOLD VOLTAGE : V
GS(th)
(V
)
CHANNEL TEMPERATURE : Tch (°C)
0.5
−25 25 50 75 100 125 15
0
V
DS
=3V
I
D
=0.1mA
Pulsed
Fig.3 Gate threshold voltage vs.
channel temperature
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
DRAIN CURRENT : I
D
(A)
0.5
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0
.5
5
10
20
Ta=125°C
75°C
25°C
−25°C
V
GS
=4V
Pulsed
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι
)
0.001
1
2
50
0.5
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0
.5
5
10
20
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
VGS
=2.5V
Pulsed
DRAIN CURRENT : I
D
(A)
Ta=125°C
75°C
25°C
−25°C
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ
)
0.0001
0.001
0.01
0.02
0.5
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
DRAIN CURRENT : I
D
(A)
0.005
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
0.05
0.1
0.2
0.1 0.2 0
.5
0.002
Ta=−25°C
25°C
75°C
125°C
V
DS
=3V
Pulsed
Fig.8 Forward transfer
admittance vs. drain current
0 5 10 15 20
0
5
10
15
GATE-SOURCE VOLTAGE : V
GS
(V)
I
D=10mA
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
Ta=25°C
Pulsed
I
D=1mA
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
−50 0 25 150
0
3
6
9
CHANNEL TEMPERATURE : Tch (°C)
−25 50 75 100 125
2
1
4
5
7
8
V
GS
=4V
Pulsed
I
D
=100mA
I
D
=10mA
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
200m
SOURCE CURRENT : I
S
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
10.50
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
V
GS
=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
3/5 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SK3019EB 　
0.1
1
2
50
CAPACITANCE : C (pF)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.5
0.2 0.5 1 2 5 10 20 5
0
5
10
20
C
iss
C
oss
C
rss
Ta
=25°C
f=1MH
Z
V
GS
=0V
Fig.11 Typical capacitance vs.
drain-source voltage
0.1
10
20
500
SWITHING TIME : t (ns)
DRAIN CURRENT : ID (mA)
5
0.2 0.5 1 2 5 10 20 50
50
100
200
1000
210
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
td(off)
t
r
t
d(on)
t
f
Fig.12 Switching characteristics
200m
SOURCE CURRENT : IS (A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
10.50
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=25°C
Pulsed
VGS
=4V 0V
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
4/5 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SK3019EB 　
Measurement circuits
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
F
ig.1-1 Switching Time Measurement Circu
it
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.1-2 Switching Waveforms
90%
90% 90
%
10% 10%
50%
10%
50%
V
GS
Pulse width
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
5/5 2011.10 - Rev.A
R1120A
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Notes