Doc No. TT4-EA-12528 Revision. 3 Product Standards Switching Diode DA4X106U0R DA4X106U0R Silicon epitaxial planar type Unit: mm 2.9 (0.95)(0.95) For small current rectification 4 Features 3 1.5 2.8 Short reverse recovery time trr Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0.13 1 2 0.65 (0.2) 1.9 Marking Symbol: 29 Basic Part Number : 0.4 1.1 DA3X102D + DA3X103E (Bridge) Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Repetitive peak reverse voltage Forward current (Average) Repetitive peak forward current Non-repetitive peak forward surge current Junction temperature Operating ambient temperature Storage temperature Note) *1 t = 1 s *1 VR VRM IF(AV) IFRM IFSM Tj Topr Tstg Rating Unit 80 80 100 150 500 150 -40 to +85 -55 to +150 V V mA mA mA C C C 1. Cathode 1,2 3. Anode 3,4 4. Anode 1 2. Anode 2 Cathode 3 Cathode 4 Mini4-G4-B Panasonic JEITA SC-61AB TO-253/SOT-143 Code Internal Connection 4 3 1 2 Page 1 of 4 Established : 2010-04-19 Revised : 2013-06-28 Doc No. TT4-EA-12528 Revision. 3 Product Standards Switching Diode DA4X106U0R Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time Note) VF VR IR Ct *1 trr Conditions Min IF = 100 mA IR = 100 A VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.25 x IR Typ Max Unit 1.2 100 15 V V nA pF 10 ns 80 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: trr test circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 VR Wave Form Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 Output Pulse t IF trr t Irr = 0.25 x IR IF = 10 mA VR = 6 V Page 2 of 4 Established : 2010-04-19 Revised : 2013-06-28 Doc No. TT4-EA-12528 Revision. 3 Product Standards Switching Diode DA4X106U0R Technical Data ( reference ) IF - VF(2-3Pin,3-4Pin) IF - VF(1-2Pin,1-4Pin) 1.E+00 Ta = 125 C 1.E-01 Forward current IF (A) Forward current IF (A) 1.E+00 1.E-02 85 C 1.E-03 25 C 1.E-04 -40 C 1.E-05 1.E-06 0.0 0.2 0.4 0.6 0.8 1.0 Ta = 125 C 1.E-01 1.E-02 85 C 1.E-03 25 C 1.E-04 -40 C 1.E-05 1.E-06 0.0 1.2 0.2 0.4 Forward voltage VF (V) IR - VR(2-3Pin,3-4Pin) IR value is not exceeding 100 pA at -40 C 1.E-05 1.0 1.2 IR value is not exceeding 100 pA at -40 C Ta = 125 C 1.E-06 85 C 1.E-07 1.E-08 25 C 1.E-09 1.E-10 1.E-05 Ta = 125 C 1.E-06 85 C 1.E-07 1.E-08 25 C 1.E-09 1.E-10 0 20 40 60 80 0 20 Reverse voltage VR (V) 40 60 80 Reverse voltage VR (V) Ct - VR(2-3Pin,3-4Pin) Ct - VR(1-2Pin,1-4Pin) 3.5 2.5 Ta = 25 C f = 1 MHz 3.0 Terminal capacitance Ct (pF) Terminal capacitance Ct (pF) 0.8 IR - VR(1-2Pin,1-4Pin) 1.E-04 Reverse current IR (A) Reverse current IR (A) 1.E-04 0.6 Forward voltage VF (V) 2.5 2.0 1.5 1.0 0.5 0.0 Ta = 25 C f = 1 MHz 2.0 1.5 1.0 0.5 0.0 0 10 20 30 Reverse voltage VR (V) 40 0 10 20 30 40 Reverse voltage VR (V) Page 3 of 4 Established : 2010-04-19 Revised : 2013-06-28 Doc No. TT4-EA-12528 Revision. 3 Product Standards Switching Diode DA4X106U0R Mini4-G4-B Unit: mm +0.20 2.90-0.05 +0.05 0.13-0.02 (0.95) (0.95) +0.10 0.40-0.05 +0.10 0.65-0.05 (6) +0.2 0.40.2 (0.2) 2 (0.65) 1 2.8-0.3 +0.25 3 1.50-0.05 4 1.90.1 +0.3 1.1-0.1 +0.2 0 to 0.1 1.1-0.1 (8) Land Pattern (Reference) (Unit: mm) 1.0 2.4 1.9 1.0 Page 4 of 4 Established : 2010-04-19 Revised : 2013-06-28 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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