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MTD3055VL March 2015 MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 V Critical DC electrical parameters specified at elevated temperature. Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. 175C maximum junction temperature rating. 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RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA= 38oC/W when mounted on a 1 in2 pad of 2oz copper. b) RJA= 96oC/W when mounted on a minimuim pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% MTD3055VL Rev. 1.1 MTD3055VL (OHFWULFDO&KDUDFWHULVWLFV ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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