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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. HA16107P/FP, HA16108P/FP PWM Switching Regulator for High-performance Voltage Mode Control REJ03F0141-0400 (Previous: ADE-204-012C) Rev.4.00 Jun 15, 2005 Description The IC products in this series are primary control switching regulator control IC's appropriate for obtaining stabilized DC voltages from commercial AC power. These IC's can directly drive power MOS FET's, they have a timer function built in to the secondary overcurrent protection, and they can perform intermittent operation or delayed latched shutdown as protection operations in unusual conditions. They can be used to implement switching power supplies with a high level of safety due to the wide range of built-in functionality. Functions * * * * * * * * * * 6.45 V reference voltage Triangle wave generator Error amplifier Under voltage lockout protector PWM comparator Pulse-by-pulse current limitting Timer-latch current limitting (HA16107) ON/OFF timer function (HA16108) Soft start and quick shutdown Output circuit for power MOS FET driving Features * * * * * * Operating frequencies up to a high 600 kHz Built-in pre-driver circuit for driving power MOS FET Built-in timer latch over-current protection function (HA16107) The OCL enables intermittent operation by an ON/OFF timer for prevention of secondary overcurrent. (HA16108) The UVL function (under voltage lockout) is applied to both Vin and Vref. ON/OFF reset: an auto-reset function which is based on the time constant of an external capacitor and observation of drops in Vin. * Since the over-voltage protection function OVP (the TL pin) only observes voltage drops in Vin, it is possible to use the OVP and ON/OFF pin for independent purposes. * Built-in 34 V Zener diode between Vin and ground. Rev.4.00 Jun 15, 2005 page 1 of 39 HA16107P/FP, HA16108P/FP Ordering Information Typical Threshold Voltage Product HA16107P HA16107FP HA16108P HA16108FP UVL1 Hi: 16.2 V Lo: 9.5 V 7.0 V Hi: 16.2 V Lo: 9.5 V Hi: 7.0 V Lo: 1.3 V Package Code (Previous Code) Notes OVP Timer latch protection DP-16 PRSP0016DH-A (FP-16DA) DP-16 On-off timer protection PRSP0016DH-A (FP-16DA) Pin Arrangement VIN 1 16 Note 2 TL, ON/OFF OUT 2 15 E/O CL(+) 3 14 IN(-) VE 4 13 NC CL(-) 5 12 GND RT1 6 11 IN(+) CT 7 10 ST RT2 8 9 Vref Note 1 (Top view) Notes: 1. In the SOP package models (HA16107FP and HA16108FP) pins 4, 5, and 13 are connected inside the IC. However, all must be connected to the system ground. 2. Pin 16 is TL (HA16107), ON/OFF (HA16108). Rev.4.00 Jun 15, 2005 page 2 of 39 HA16107P/FP, HA16108P/FP Pin Functions * HA16107P, HA16108P Pin No. Symbol Pin Functions 1 2 VIN OUT Input voltage Pulse output 3 4 CL (+) VE Current limiter Output ground 5 6 CL (-) RT1 Current limiter Timing resistor (rising time) 7 8 CT RT2 Timing capacitor Timing resistor (falling time) 9 10 Vref ST Reference voltage output Soft start 11 12 IN (+) GND Error amp (+) input Ground 13 14 NC IN (-) NC Error amp (-) input 15 16 E/O TL, ON/OFF Error output Timer latch (HA16107), ON/OFF (HA16108) * HA16107FP, HA16108FP Pin No. Symbol Pin Functions 1 2 VIN OUT Input voltage Pulse output 3 4 CL (+) GND Current limiter Ground 5 6 GND RT1 Ground Timing resistor (rising time) 7 8 CT RT2 Timing capacitor Timing resistor (falling time) 9 10 Vref ST Reference voltage output Soft start 11 12 IN (+) GND Error amp (+) input Ground 13 14 GND IN (-) Ground Error amp (-) input 15 16 E/O TL, ON/OFF Error output Timer latch (HA16107), ON/OFF (HA16108) Rev.4.00 Jun 15, 2005 page 3 of 39 HA16107P/FP, HA16108P/FP Block Diagram * HA16107P/FP TL E/O 16 15 IN (-) 14 EA NC GND IN (+) ST Vref 13 12 11 10 9 - Error amp. + 140 A VIN UVL1 H L 16 A 6.45 V zener type Ref. voltage Gen. VL V H R Q 34 V Vref UVL2 O V P H L UVL2 4V 5V S 4 A UVL1 On/Off latch (VTH = 7 V) ST Triangle waveform + + - PWM Comparator UVL1 and UVL2 Pulse-by-pulse latch Vref Q R QCLM Q S VC OUT Triangle waveform OSC 3.4 V 10 A Triangle waveform Latch reset pulse Current limiter ON duty pulse VE 1 2 3 4 5 6 7 8 VIN OUT CL (+) VE CL (-) RT1 CT RT2 ON/OFF E/O IN (-) NC GND IN (+) ST Vref 16 15 13 12 11 10 9 * HA16108P/FP 14 EA - Error amp. + 140 A VIN UVL1 H L 16 A 6.45 V zener type Ref. voltage Gen. VL V H R Q 34 V Vref UVL2 O V P H L UVL2 4V 5V S 4 A UVL1 On/Off latch (VTH = 7 V) ST Triangle waveform + + - PWM Comparator UVL1 and UVL2 Pulse-by-pulse latch Vref Q R QCLM Q S VC 1 VIN OUT Triangle waveform OSC Triangle waveform Latch reset pulse Current limiter ON duty pulse VE 2 3 4 5 6 7 8 OUT CL (+) VE CL (-) RT1 CT RT2 Note: Dotted lines apply to the SOP package model (pins 4, 5, and 13: ground) Rev.4.00 Jun 15, 2005 page 4 of 39 3.4 V 10 A HA16107P/FP, HA16108P/FP Function and Timing Chart Triangle Waveform and PWM Output * Timing chart (during normal operation) Triangle waveform is output to CT pin VTH 4.2 V typ E/O CT VTL 2.2 V typ 2VBE 0V VRT2 VIN 0V OUT Dead band tDB tON * Oscillator equivalent circuit Vref (connected internally) 9 x2 x2 RT2 VRT2 - x2 + 8 I1 I1 6 RT1 I2 7 Comparator for triangle waveform oscillation 2I2 - x2 CT + 0.6 V The x 2s are transistors whose emitter area is doubled. Vref - 2VBE RT1 Vref - 2VBE I2 = RT2 I1 = tDB = tON CT x RT1 x 2V 0.4 x CT x RT1 (s) Vref - 2VBE RT2 tDB (s) 2RT1 - RT2 RT2 2RT1 1 - Du max (Hz) tDB Du max = fOSC Note: When fOSC is high, the actual value will differ from that given by the formula due to the delay time. Determine the correct constants after constructing a test circuit. Rev.4.00 Jun 15, 2005 page 5 of 39 HA16107P/FP, HA16108P/FP 1. Timing in Normal Operation Timing in these ICs is based on a triangular voltage waveform. The rising edge (leading edge) defines the deadband time tDB. The falling edge (trailing edge) defines the ON-duty control band tON. PWM output is on in the area within tON that is bounded above by the triangle wave VCT and error output VE/O. The following pin outputs are related to PWM control: CT (pin 7): triangle-wave voltage output E/O (pin 15): error output voltage RT2 (pin 8): ON-duty pulse output voltage OUT (pin 2): PWM pulse output (for driving the gate of a power MOS FET) 2. Triangle Oscillator, Waveform and Frequency The triangle oscillator in these ICs generates a triangular waveform by charging and discharging timing capacitor CT with a constant current, as shown in the equivalent circuit. The CT charge current is: I(CTchg) = I1 = VREF - 2VBE RT1 The discharge current is: I(CTdischg) = 2I2 - I1, where I2 = VREF - 2VBE RT2 In these equations Vref (reference voltage) is typically 6.45 V, and VBE (base-emitter voltage of internal transistors) is about 0.7 V. The deadband time is: tDB = CT x RT1 x 2V + 0.25 s VREF - 2VBE 0.4 x CT x RT1 + 0.25 s The ON-duty time is: tON = tDB x RT2 2RT1 - RT2 The 0.25 s in these equations is a correction term for internal circuit delays. The maximum ON-duty is Du max = RT2 2RT1 The oscillating frequency is: 1 0.4 CT RT1 + 0.25 + 0.25 RT2 1- 2RT1 1 (Hz) = 0.8 CT RT12 + 0.25 x 2RT1 + 0.25 2RT1 - RT2 fOSC = When RT1 = RT2, the maximum ON-duty is 50%, and: fOSC = 1 0.8 CT RT1 + 0.25 x 2 + 0.25 1 (Hz) 0.8 CT RT1 + 0.75 This approximation is fairly close, but it should be checked in-circuit. Rev.4.00 Jun 15, 2005 page 6 of 39 HA16107P/FP, HA16108P/FP 3. Programming of Maximum ON-Duty (Du Max) The preceding equations should be used to program the deadband or maximum ON-duty. The following table gives a summary. Condition RT1 > RT2 RT1 = RT2 RT1 < RT2 Triangle waveform Du max Less than 50% 50% Greater than 50%* Note: In a primary-control switching regulator, Du Max > 50% is dangerous because the transformer will saturate. Soft Start and Quick Shutdown One purpose of the soft-start function is to protect the switching controller and power MOS FET from surges at powerup. Another purpose is to let the secondary-side DC voltage rise smoothly. When power goes off, the quick-shutdown function rapidly discharges the capacitor in the soft-start circuit (and at the same time switches the PWM output off) to prepare for the next power-on. The soft-start function in these ICs lets the PWM output develop smoothly from zero to the designated pulse width at power-up. The soft-start voltage is the 3.8 V voltage value of an internal Zener diode, so the PWM output is able to start widening gradually as soon as the soft-start function starts operating. The soft-start function will start promptly even if CST is large. The soft-start and quick-shutdown modes are selected automatically in the IC, under control of the UVL signal. Rev.4.00 Jun 15, 2005 page 7 of 39 HA16107P/FP, HA16108P/FP * Timing waveforms Level determined by transformer VIN 16.2 V 9.5 V VIN Vref 6.45 V 5V 4V 0V Vref VST VCT CST discharge 4.2 V 3.8 V 2.2 V VCT, VST, VE/O 0V VE/O VOUT (PWM pulse) VIN Quick shutdown 0V Soft start Normal operation Vref Vref 9 from Vref CST ST (Time t) + 10 3.8 V Zener diode from UVL2 (Effective for quick shutdown) + - PWM comparator 10 A VCT E/O 15 7 Note: The soft-start time constant is determined by CST and the constant-current value (typically 10 A). Rev.4.00 Jun 15, 2005 page 8 of 39 HA16107P/FP, HA16108P/FP Vref Protection Functions: Overvoltage and Undervoltage Vref overvoltage and undervoltage conditions are detected by the overvoltage detection circuit and UVL2 circuit. PWM output shuts down when Vref 8 V. UVL2 detects undervoltage with hysteresis between approximately 4 V and 5 V. PWM output also shuts down below these voltages. It follows that PWM output will shut off whenever the Vref pin is shorted to the power supply (VIN) or ground (GND). PWM output also shuts off when VIN is turned on or off. The following diagram shows how these protection functions operate when power comes on and goes off (Vref < 6.45 V), and when a high external voltage is applied to the Vref pin (Vref > 6.45 V). PWM output shutdown region PWM OUT Power-off, or shorted to ground PWM output operating region Shorted to power supply Power-up PWM output shut-down region Vref 0 4V 5V UVL2 6.45 V 8 V 10 V Vref OVP 1. Current-Limiter Circuit The current limiter pin (CL) is connected to the emitter of an npn transistor, as shown in the block diagram. The threshold voltage is 240 mV typ. The switching speed of this circuit is approximately 100 ns from detection of overcurrent to shut-down of PWM output. Switching speed increases with the strength of the signal input to the CL pin. Instead of simple pulse-by-pulse current limiting, in these ICs the current limiting circuit is linked to the timer-andlatch or ON/OFF timer circuit, and also detects the degree of overcurrent. The overcurrent value is determined from the point at which current limiting is triggered in the ON-duty cycle. With a large overcurrent (causing current limiting to operate even at a small ON-duty), the IC automatically shortens the timer time. Rev.4.00 Jun 15, 2005 page 9 of 39 HA16107P/FP, HA16108P/FP Undervoltage Lockout and PWM Output The undervoltage lockout function turns off the PWM pulse output when the controller's supply voltage goes below a designated value. These ICs have two undervoltage lockout circuits. The UVL1 circuit senses the supply voltage VIN. The UVL2 circuit senses the Vref voltage. A feature of these ICs is that PWM output is turned on only when both voltages are above designated values. Otherwise, the IC operates in standby mode. The two built-in undervoltage lockout circuits make it possible to configure an extremely safe power supply system. PWM output will shut down under a variety of abnormal conditions, such as if Vref is shorted to ground while VIN is applied. * UVL1 (VIN and Vref) IIN *1 9.5 V 0 16.2 V 10 V 20 V 30 V 34 V VIN Notes: 1. Breakdown voltage of the internal Zener diode (Vz = 34 V typ). 2. Hysteresis characteristic. 6.45 V Vref *2 0 10 V 20 V VIN 30 V * UVL2 (Vref and PWM output) Vref 6.45 V 5V 4V 0 10 V 20 V VIN 30 V Operating region OUT 0 10 V 20 V PWM output shut-down region VIN 30 V * UVL1 and UVL2 VIN (UVL1) L H H L Vref (UVL2) L L H H PWM OUT L L OUT L Standby mode Note: Double circles indicate standby mode. Rev.4.00 Jun 15, 2005 page 10 of 39 HA16107P/FP, HA16108P/FP Timer Latch and ON/OFF Timer The HA16107 has a built-in timer-latch function. The HA16108 has a built-in ON/OFF timer function. The timer-latch function is an overvoltage protection function that combines latched shutdown of PWM output with a timer function to vary the time until latched shutdown occurs according to the overcurrent value. A dedicated voltage detection pin is provided in addition to Vref overvoltage protection. The ON/OFF timer function is equivalent to the above timer-latch function without the latch. If overcurrent is detected continuously, PWM output shuts down temporarily, then normal operation resumes. This process repeats, temporary shutdown alternating with normal operation. Both the timer-latch function in the HA16107 and the ON/OFF function in the HA16108 wait for an interval after overcurrent detection before shutting down PWM output. The interval is determined by capacitor CTM and the value of the charge/discharge current supplied internally from the IC. Normal operation therefore continues if a single overcurrent spike is detected, while if continuous overcurrent is detected, the current and voltage droop curves for the secondary-side output have sharp characteristics. 1. Use of Timer-Latch Pin (HA16107) Timer-Latch Usage See external circuit 1 in the following diagram. Under continuous overcurrent, the CML switch turns on, charging CTM with 12 A. PWM output shuts down when the voltage at pin 15 exceeds 7 V. Overvoltage Protection Usage See external circuit 2 in the diagram. This configuration is suitable when overvoltage is detected by an OVP signal received through an optocoupler from the DC output on the secondary side of an AC/DC converter. PWM output shuts down when the OVP signal allows the voltage at the TL pin to exceed 7 V. The shutdown is latched. VIN must go below approximately 6.5 V (VINR2) to release the latched state. * External circuit 2 * External circuit 1 16 A from CML OVP with latch timer 15 CTM OVP signal (from secondary) VIN TL 4 A HA16107 7.0 V Latch (PWM output shuts down) VTH B VTL A 0V t OCL detected continuously (activating pulse-by-pulse current limiter) Notes: 1. Path A is followed if the OCL input stops before VTH is reached. 2. Path B is followed if OCL is detected continuously until the latch point is reached. 3. The latch function is cleared when VIN goes below approximately 7.0 V. Rev.4.00 Jun 15, 2005 page 11 of 39 HA16107P/FP, HA16108P/FP 2. Use of ON/OFF Timer Pin (HA16108) External Circuit 16 A from CML ION + OVP with latch timer 16 IOFF 4 A HA16108 ON/OFF Timer Operation 7.0 V 1.2 V VTHH tOFF tON VTHL 0V t OCL detected PWM OCL detected (PWM output on) output (PWM output on) shut down Pulse-by-pulse current limiting tON C x 5.8 V (0.9 - Du) x 16 A - 4 A tOFF C x 5.8 V 4 A Notes: 1. C is the capacitance of an external timing capacitor connected between this pin and ground. 2. Du is the ON-duty of the PWM output when overcurrent limiting is triggered. 3. The values of tON and tOFF for TL can be determined by the same equations as given for the ON/OFF timer, except that 5.8 V (VTHH - VTHL) becomes VTHH = 7 V. 4. If the timer goes off during soft start or in the undervoltage lockout region, after recovery, output will come on after the soft-start time or after the rise time to the undervoltage lockout release point, which is determined by the time constant. Rev.4.00 Jun 15, 2005 page 12 of 39 HA16107P/FP, HA16108P/FP Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Value Units Supply voltage VIN 30 V Output current (DC) Output current (peak) IO Iopeak 0.2 2 A A Current limiter voltage Error amp input voltage VCL VIEA +4, -1 Vref V V E/O output voltage RT1 pin current VIE/O IRT1 Vref 500 V A RT2 pin current Power dissipation IRT2 PT 5 680 mA mW Operating temperature range Storage temperature range Topr Tstg -20 to +85 -55 to +125 C C Notes 1, 2 Power dissipation PT (mW) Notes: 1. For the "FP" products (SOP package), this value is when mounted on a 40 by 40 by 1.6 mm glass epoxy substrate. However, this value must be derated by 8.3 mW/C from Ta = 45C. When the wiring density is 10%, and 11.1 mW/C from Ta = 64C when the wiring density is 30%. 2. For the "P" products (DIP package), this value is valid up to 45C, and must be derated by 8.3 mW/C above 45C. 3. In the case of SOP, use center 4 pins, (4), (5), (12), (13) for solder-mounting and connect the wide ground pattern, because these pins are available for heat sink of this IC. 30% Wiring density 45C 64C 700 600 500 400 300 200 10% Wiring density 100 -20 0 20 40 60 80 100 Ambient temperature Ta (C) Rev.4.00 Jun 15, 2005 page 13 of 39 120 140 HA16107P/FP, HA16108P/FP Electrical Characteristics (Ta = 25C, VIN = 18 V, fOSC = 100 kHz) Section Reference voltage Triangle wave generator PWM comparator Error amp Overcurrent detector Item Output voltage Symbol Vref Min 6.10 Typ 6.45 Max 6.80 Unit V Test Conditions Line regulation Load regulation Line Load - - 30 30 60 60 mV mV 12 V VIN 30 V 0 mA IO 10 mA Temperature stability Short circuit current Vref/ Ta IOS - 40 - 30 50 - ppm/ C mA Over voltage protection (Vref OVP voltage) Maximum frequency Vrovp 7.4 8.0 9.0 V fmax 600 - - kHz Minimum frequency Voltage stability fmin f/fo1 - - - 1 1 3 kHz % Temperature stability f/fo2 - 1 - % Frequency accuracy fOSC 270 300 330 kHz Minimum deadband pulse width Low level threshold voltage tDB - - 1.0 s VTL 1.9 2.2 2.5 V High level threshold Differential threshold VTH VTH 3.8 1.7 4.2 2.0 4.6 2.3 V V Deadband width initial accuracy Deadband width voltage stability DB1 - 1 3 % DB2 - 0.2 2.0 % Deadband width temperature stability Input offset voltage DB3 - 1 - % VIO - 2 10 mV Input bias current Input sink current IIB Iosink - 80 0.8 140 2.0 - A A VO = 2 V Output source current High level output voltage Iosource VOH 80 Vref - 1.5 140 - - - A V VO = 5 V IO = 10 A Low level output voltage Voltage gain VOL - - 0.5 V IO = 10 A GV f = 10 kHz Vref = 0 V 12 V VIN 30 V fo1 = (fmax + fmin)/2 -20C Ta +85C fo2 = (fmax + fmin)/2 RT1 = RT2 = 27 k CT = 120 pF RT1 = RT2 = 27 k CT = 470 pF 12 V VIN 30 V (Dmax - Dmin)/2 -20C Ta +85C (Dmax - Dmin)/2 - 55 - dB Band width (-) Common mode voltage BW VCM- - 1.2 15 - - - MHz V (+) Common mode voltage (+) Threshold voltage VCM+ - - V VTH+ 0.216 0.240 Vref - 1.5 0.264 V (+) Bias current (-) Threshold voltage IB+ VTH- - -0.264 180 -0.240 250 -0.216 A V VCL+ = 0 V (-) Bias current Response time IB- toff - - 950 100 1350 - A ns VCL = -0.3 V CL; open VCL = +0.35 V Notes: 1. Only applies to the HA16107P, HA16108P 2. The terminal should not be applied under -1.0 V. Rev.4.00 Jun 15, 2005 page 14 of 39 Note 1, 2 1, 2 HA16107P/FP, HA16108P/FP Electrical Characteristics (cont.) (Ta = 25C, VIN = 18 V, fOSC = 100 kHz) Section Soft start Under voltage lockout 1 Item High level voltage Symbol VSTH Min 3.2 Typ 3.8 Max 4.4 Unit V Sink current VIN high level threshold voltage Isink VINTH 7 14.7 10 16.2 13 17.7 A V VIN low level threshold voltage Threshold differential voltage VINTL 8.5 9.5 10.5 V VTH 5.2 6.2 7.2 V Under voltage lockout 2 Vref high level threshold voltage Vref low level threshold voltage VrTH 4.5 5.0 5.5 V VrTL 3.5 4.0 4.5 V Timer latch, ON/OFF 2 timer * Latch threshold voltage VIN reset voltage VTHH 6.5 7.0 7.5 V Output Total Test Conditions Isink = 1 mA VST = 2.0 V (VINTH - VINTL) Latch threshold voltage VINR2 6.0 6.5 7.0 V Reset voltage Differential threshold to UVL low voltage VTHL2 V 1.0 2.0 1.3 3.0 1.6 - V V Source current (OCL mode) Sink current (latch mode) Isource 8 12 16 A Isink 2.5 4 5.5 A Low voltage High voltage VOL1 VOH - VIN - 2.2 1.7 - 2.2 - V V Iosink = 0.2 A Iosource = 0.2 A Low voltage (standby mode) Rising time VOL2 - - 0.5 V Iosink = 1 mA tr - 40 -- ns CL = 1000 pF Falling time Standby current tf Ist - - 60 160 -- 250 ns A CL = 1000 pF VIN = 14 V Operation current IIN1 - 16 20 mA Operation current IIN2 - 12 16 mA VIN = 30 V, CL = 1000 pF, f = 100 kHz VIN = 30 V, f = 100 kHz, Output open ON/OFF latch current VIN - GND Zener voltage IIN3 - 350 460 A VZ 30 34 - V Notes: 1. Only applies to the HA16108P/FP. 2. Timer latch: HA16107P/FP. ON/OFF timer: HA16108P/FP. Rev.4.00 Jun 15, 2005 page 15 of 39 Note 1 (VINTL - VINR2) Over current detection mode TL(ON/OFF) terminal = 4 V VIN = 14 V HA16107P/FP, HA16108P/FP Note on Standby Current In the test circuit shown in figure 1, the operating current at the start of PWM pulse output is the standby current. If the resistance connected externally to the Vref pin (including RT2) is smaller than that of the test circuit, the apparent standby current will increase. VIN Vref Rref Ist HA16107 Series + CIN IIN Figure 1 Standby Current Test Circuit Rev.4.00 Jun 15, 2005 page 16 of 39 HA16107P/FP, HA16108P/FP Application Note * Case: When DC power is applied directly as the power supply of the HA16107/HA16108, without using the transformer backup coil. * Phenomenon: The IC may not be activated in the case of a circuit in which VIN rises quickly (10 V/100 s or faster), such as that shown in figure 2. * Reason: Because of the IC circuit configuration, the timer latch block operates first. * Remedy (counter measure): Take remedial action such as configuring a time constant circuit as shown in figure 3, to keep the VIN rise speed below 10 V/100 s. If the IC power supply consists of an activation resistance and backup coil, as in an AC/DC converter, The VIN rise speed is usually around 1 V/100 s, and there is no risk of this phenomenon occurring. Output Input VIN HA16107 Series VIN Feedback GND Figure 2 Example of Circuit with Fast VIN Rise Time Input Output Time constant circuit VIN 18 V 1 F C R 51 VIN HA16107 Series Feedback GND Figure 3 Sample Remedial Circuit Rev.4.00 Jun 15, 2005 page 17 of 39 HA16107P/FP, HA16108P/FP Characteristic Curves Operating Current vs. Power Supply Voltage 40 Ta = 25C RT1 = RT2 = 27 k CT = 470 pF Operating current (mA) 30 fOSC = 100 kHz 20 10 0 10 20 30 40 Power supply voltage (V) Latch Current vs. Power Supply Voltage 2.0 Ta = 25C RT1 = RT2 = 27 k CT =470 pF Latch current (mA) 1.5 fOSC = 100 kHz 1.0 0.5 0 10 20 Power supply voltage (V) Rev.4.00 Jun 15, 2005 page 18 of 39 30 40 HA16107P/FP, HA16108P/FP Standby Current vs. Power Supply Voltage 400 Ta = 25C RT1 = RT2 = 27 k CT =470 pF Standby current (A) 300 fOSC = 100 kHz 200 100 0 4 8 12 16 20 8 10 Power supply voltage (V) Output VOH vs. Reference Voltage 20 Ta = 25C VIN = 20 V CT = 470 pF Output VOH (V) 15 10 Vref UVL2 Voltage Vref OVP Voltage 5 0 2 4 6 Reference voltage (V) Rev.4.00 Jun 15, 2005 page 19 of 39 HA16107P/FP, HA16108P/FP Reference Voltage vs. Power Supply Voltage Reference voltage (V) 8 Ta = 25C RT1 = RT2 = 27 k CT =470 pF fOSC = 100 kHz 6 4 2 0 10 20 30 Power supply voltage (V) Output OFF Time vs. VCL 400 Output OFF time (ns) 300 Ta = 25C RT1 = RT2 = 27 k CT =470 pF fOSC = 100 kHz VCL 200 CL = 100 pF CL = unloaded 100 0 0.2 0.3 VCL (V) Rev.4.00 Jun 15, 2005 page 20 of 39 0.4 HA16107P/FP, HA16108P/FP Output ON Duty vs. Error Input Voltage 60 Ta = 25C RT1 = RT2 = 27 k CT =470 pF fOSC = 100 kHz Output ON duty (%) 50 40 30 20 10 0 1 2 3 Error input voltage (V) Rev.4.00 Jun 15, 2005 page 21 of 39 4 5 HA16107P/FP, HA16108P/FP Vref Reference Voltage and PWM Out vs. CL(+) 0.1 0.2 0 0.1 0.2 0.3 0.4 3.0 0.3 0.4 3.0 PWM OUT 0 CL(+) Vref Reference Voltage and PWM Out vs. CL(-) -0.1 -0.2 0 -0.1 -0.2 -0.3 -0.4 -1.0 -0.3 -0.4 -1.0 PWM OUT 0 CL(-) Rev.4.00 Jun 15, 2005 page 22 of 39 HA16107P/FP, HA16108P/FP Timing Resistance vs. Deadband Duty 20 VIN = 18V Timing resistance RT1,RT2 (k) Ta = 25C 15 CT = 470 pF fOSC 100 kHz 10 RT1 RT2 5 0 30 40 50 60 80 70 Deadband duty (%) Temperature Fluctuation vs. Ambient Temperature 2000 VIN = 18V Temperature fluctuation (ppm) RT1 = RT2 = 27 k CT = 470 pF 1000 fOSC = 100 kHz 0 -1000 -2000 -20 0 25 50 Ambient temperature (C) Rev.4.00 Jun 15, 2005 page 23 of 39 75 85 HA16107P/FP, HA16108P/FP Frequency Variance vs. Ambient Temperature 10 VIN = 18V Frequency variance (%) RT1 = RT2 = 27 k CT = 470 pF 5 fOSC = 100 kHz 0 -5 -10 -20 0 25 50 75 85 75 85 Ambient temperature (C) Frequency Variance vs. Ambient Temperature 10 VIN = 18V RT1 = RT2 = 27 k CT = 120 pF fOSC = 300 kHz Frequency variance (%) 5 0 -5 -10 -20 0 25 50 Ambient temperature (C) Rev.4.00 Jun 15, 2005 page 24 of 39 HA16107P/FP, HA16108P/FP Frequency Variance vs. Ambient Temperature 10 VIN = 18V RT1 = RT2 = 13 k CT = 120 pF fOSC = 600 kHz Frequency variance (%) 5 0 -5 -10 -20 0 25 50 75 85 Ambient temperature (C) Output ON Duty Variance vs. Ambient Temperature 10 Output ON duty variance (%) VIN = 18V 5 0 f = 100 kHz f = 300 kHz -5 f = 600 kHz -10 -20 0 25 50 Ambient temperature (C) Rev.4.00 Jun 15, 2005 page 25 of 39 75 85 HA16107P/FP, HA16108P/FP Oscillator Frequency vs. Timing Resistance 600 500 VIN = 18 V Ta = 25C 300 C T = 12 0 Oscillator frequency (kHz) 27 100 90 0 47 0 70 50 pF pF pF 82 0 pF 30 33 00 pF 10 9 7 5 7 10 30 50 Timing resistance RT1 (= RT2) (k) Rev.4.00 Jun 15, 2005 page 26 of 39 70 100 HA16107P/FP, HA16108P/FP Vout Output Rising Waveform Ta = 25C Test circuit 40 RT1 = RT2 = 27 k CT = 470 pF Vout (V) 30 Current probe 20 fOSC = 100 kHz IO TL 10 CL 1000 pF 0 IO (mA) VIN 500 R T1 CT ST RT2 Vref -500 1 F CL (+) 27 k 470 pF 0 + OUT CST + 1 F 27 k 200 ns/div Vout Output Falling Waveform 40 Vout (V) 30 20 10 I O (mA) 0 500 0 -500 200 ns/div Rev.4.00 Jun 15, 2005 page 27 of 39 * Current probe: Tektronix AM503 HA16107P/FP, HA16108P/FP HA16107 Operating waveform at the TL pin Test circuit When overcurrent is input at the point where the duty cycle is 0%. VIN = 18V RT1 = RT2 = 27 k CT = 470 pF fOSC = 100 kHz VIN 7 TL OUT CL 6 1000 pF SW Clock 470 pF 27 k 4 VTL (V) 1 F CL(+) B 5 + RT1 CT ST RT2 Vref 27 k 3 CST + 1 F A 2 1 Triangle wave 0 CL(+) when input at a duty of 0% 0.5 sec/div tOFF tON Output pulse shutdown region SW ON CL(+) when input at a duty of 30% t1 SW OFF t2 When overcurrent is input at the point where the duty cycle is 30%. Du = t1 x 100 (%) t2 7 Enlargement of section A 6 a 5 c B 4 VTL (V) b VTL CTL discharged at 4 A CTL discharged at 12 A 3 t 2 Enlargement of section A 1 B CTL discharged at 4 A VTL 0 tOFF tON Output pulse shutdown region SW ON SW OFF Rev.4.00 Jun 15, 2005 page 28 of 39 t 0.5 sec/div a to b : The point where overcurrent is detected b b : PWM pulse output is High to c : PWM pulse output is Low. HA16107P/FP, HA16108P/FP HA16108 Operating waveform at the ON/OFF pin V IN = 18V R T1 = R T2 = 27 k1/2 C T = 470 pF f OSC = 100kHz Test circuit VIN When overcurrent is input at the point where the duty cycle is 0%. 7 ON/OFF OUT CL 6 CL(+) 1000 pF B 1 F Clock 5 V ON/OFF (V) + 470 pF 27 k1/2 R T1 ST CT 4 3 C ST + 1 F R T2 27 k1/2 2 A 1 Triangle wave 0 CL(+) when input at a 0.5 sec/div duty of 0% t ON t OFF t ON t OFF t ON t OFF CL(+) when input at a duty of 30% t1 Output pulse shutdown region SW ON SW OFF t2 When overcurrent is input at the point where the duty cycle is 30%. Du = t1 x 100 (%) t2 7 Enlargement of section A B 6 a c V TL 5 V ON/OFF (V) b 4 CTL discharged at 4 A CTL discharged at 12 A 3 t 2 A Enlargement of section B 1 V TL CTL discharged at 4 A 0 0.5 sec/div t ON t OFF t ON t OFF t a to b : PWM pulse output is High. b SW ON SW OFF Output pulse shutdown region Rev.4.00 Jun 15, 2005 page 29 of 39 : The point where overcurrent is detected. b to c : PWM pulse output is Low. HA16107P/FP, HA16108P/FP Error Amplifier Characteristic 40 0 45 AVO 20 90 135 0 10 k 30 k 100 k 300 k 1M 3M 10 M Phase Change (deg) Open Loop Gain AVO (dB) 60 180 30 M 100 M Input signal frequency fIN (Hz) Examples of Drooping Characteristics of Power Supplies Using these Ics 5.0 VOUT (DC) (V) ON Pulse by pulse Current limiter operation Normal operation Latch state here A 2.5 B A B OFF 0 1 2 IOUT (DC) (A) 3 Heavy load Light load 4 HA16107 (Latch shut-down) 5.0 VOUT (DC) (V) ON Pulse by pulse Current limiter operation OFF A 2.5 B 0 1 2 IOUT (DC) (A) A B 3 4 HA16108 (Intermittent operation by means of ON/OFF timer) Rev.4.00 Jun 15, 2005 page 30 of 39 Heavy load Light load HA16107P/FP, HA16108P/FP Operating Circuit Example * Flyback Transforrmer Application Example (IC Vref used as system as reference voltage) Schottky barrier diode Bridge Diode Start-up Resistor 82 k 1W 51 El-30 Trans former 140 V HRP 24 + 40T 2SK1567 + 6T - 5V OUTPUT 470 F - HZP 16 1.5 3W RFI 23T HRP 32 Current Sense 18.9 V FILTER 50 V 22 F AC INPUT -++ 16 16 A 13 12 11 3.225 V 10 ST Soft Start Cap. - +16 V 9 Vref 33k 33k + - 1 F 16 V HA16107P/FP 6.45 V Rev.4.00 Jun 15, 2005 page 31 of 39 68 k IN(+) 1 F RT2 27 k 510 k NC Phase Comp. GND 34 V Vref UVL2 3.4 V 10 A 8 Frequency, Max, Duty Setting 14 4V 5V 7 CT fosc = 100 kHz, Dumax = 50% E/O - IN(-) Error amp. UVL2 H L 470 pF VIN O V P 6 RT1 6.45 V Zener type reference voltage generation circuit UVL1 ST 27 k 16 V 1 F 330 k + 15 140 A UVL1 H L VL VH R Q S (V TH= 7V) Vref 5 CL(-) Current limiter 4 4700 pF ON/OFF Latch 3 VE 4 A QR QS VE 51 Triangle wave PWM Comparator UVL1&UVL2 P{ulse by pulse latch QCLM 2 OUT VC CL(+) Timerlatch Capacitor TL 1 OUT OVP Detector HZP 16 VIN 110 Current Sense L.P.F. + Rev.4.00 Jun 15, 2005 page 32 of 39 10 k CL VOUT (+) 1 2 3 4 13 k 5 470 pF RT1 CT CT2 6 7 8 HA16107P/108P 4700 pF 51 13 k 110 HZP16 + 0.47 F - 1 W 82 k (Start-up resistor) RB 200 V - 100 F + Power thermister (Soft start Timer latch 1 F - 1 F capacitor) - + capacitor + 16 15 14 13 12 11 10 9 TL E/O IN NC IN ST Vref (-) (+) AC INPUT Bridge diode 0.5 8T * 0.5 8T * (Current sense filter) 51 50 V - 22 F + HRW26F 3W 1.5 (Current sense) 2SK1567 0.3 50 T 0.3 50 T DFG1C8 HA17431P Secondary error amplifier 330 + 16 V 3.3 k - 1000 F 1.8 k + - 3.3 F 4.7 k B * Bifiler transfomer core size EI-30 equivalent product TLP521 47 H - DC OUT (5 V) + HA16107P/FP, HA16108P/FP * Forward Transformer Application Example HA16107P/FP, HA16108P/FP * When OVP signal is inserted at CL(+) pin VIN RB OVP detector VIN OUT CL(+) TL + 1 F When the OVP detection Zener diode turns on, latch shutdown of the output is performed after the elapse of the time determined by the capacitance connected the TL pin. Rev.4.00 Jun 15, 2005 page 33 of 39 HA16107P/FP, HA16108P/FP Application 1. Use of Error Amplifier for Flyback Transformer Primary-Side Control In this example, the fact that the transformers winding ratio and voltage ratio in Figure 4 are mutually proportional is made use of in a flyback transformer type AC-DC converter. As fluctuation of output voltage V2 also appears in IC power supply voltage V3, this is divided by a resistance and amplified by an error amplifier. An advantage of this method is that a photocoupler need not be used, making it possible to configure a power supply with a small number of parts (this example cannot be applied to a forward transformer). *V1(input voltage) Commercial AC input Output V3(IC power supply voltage) Start-up resistance To switch element N1 V2(output voltage) N2 N3 R4 R1 C1 - 14 + R2 11 R3 15 Flyback transformer E/O Error amp. R2 x V3 = R 1 + R2 Where 2.5V V3 = 1 Vref 2 N3 x V2, N2 Figure 4 Error Amplifier Peripheral Circuitry Diagram <Determining External Constants around Error Amplifier> 1. Detrrrmining DC Characteristics In Figure 4, the relational expression in the box is satisfied, and therefore parameters are determined based on this. The absolute value of the number of transformer windings is determined based on the equation N1:N2:N3 = V1:V2:V3, taking primary inductance into consideration. Next, IC operating voltage V3 is made around 11V to 18V, taking the UVL voltage into consideration. If V3 is too large, the power consumption of the IC will increase, causing heat emission problems. If V3 is too small, on the other hand, there will be problems with defective power supply start-up. 2. Determining Error Amplifier Gain vs. Frequency Characteristic Taking the configuration in Figure 4, the error amplifier gain characteristic with respect to fluctuation of output voltage V2 is as shown in Figure 5. Gain G (dB) G1 G2 f1 fAC f2 R6 0 R6 = 0 fOSC Frequency f (Hz) Figure 5 Error Amplifier Characteristic Rev.4.00 Jun 15, 2005 page 34 of 39 HA16107P/FP, HA16108P/FP In Figure 5, the parameters are given by the following equations. Gain G1 = V3/V2 x R3/R1 G2 = V3/V2 x R4/R1 Corner frequencies f1 = 1/(2 C1 R3) f2 = 1/(2 C1 R4) Where R3>>R4 (10:1 or above) G1 is made around 30 to 50 dB, taking both regulation and stability into consideration. f1 is made a lower value than commercial frequency ripple fAC, thus preventing hunting (a system instability phenomenon). Next, G2 is set to 0 dB or less as a guideline, so that there is no gain in IC operating frequency fOSC (several tens to several hundreds of kHz). f2 should be set to a value that is substantially smaller than fOSC, and that is appropriate for the power supply response speed (several kHz). In the case of a bridge type rectification circuit, the commercial frequency ripple is twice the input frequency (with a 50 Hz commercial frequency, fAC = 100 Hz). 2. External Constant Design for Current Detection Section (HA16107, HA16108, HA16666) In the above IC models, which incorporate a current detection function, a low-pass filter such as shown in Figure 6 must be inserted between switch element current detection resistance RCS and the current detection pin of the IC. Input voltage 140V VB Floating capacitance CX Output From PWM output pin of IC To current detection pin of IC Switch element power MOS FET ID RA V11 Current detection resistance V12 CA RB RCS Several hundred m to several Filter (LPF) Figure 6 Current Detection Circuit Rev.4.00 Jun 15, 2005 page 35 of 39 HA16107P/FP, HA16108P/FP The reason for this is that, when the switch element is on in each cycle, there is an impulse current associated with charging of transformer floating capacitance CX, and IC current detection malfunctions (see Figure 7). VTH V11 V12 Figure 7 Current Detection Waveform <Setting Numeric Values> If the switch element current to be detected is designated ID, and the current detection resistance RCS, then the following equation is satisfied using the parameters in Figure 6. ID x RCS = ((RA + RB)/RB) VTH VTH is the detection level voltage of the IC (240 mV in the case of the HA16107, for example). RA and RB are set to values on the order of several hundred to several k, so that RCS is not affected. Next, the filter cutoff frequency is set according to the following equation. fC = 1/(2 CA (RA/RB)) fC can be found with the following guideline, using IC operating frequency fOSC, power supply rating on-duty D, and power MOS element turn-on time tON. fosc/D fC 1/(100 x tON) Value 100 in the above equation provides a margin for noise, ringing, and so forth. <Actual Example> In an SW power supply using an HA16107, with a 100 kHz operating frequency and a D value of 30%, the relevant values were as follows: VB = 140 V, CX = 80 pF, tON = 10 ns. Thus, when RCS = 1 , the V11 level peak value reaches the following figure. V11 (peak) = RCS x ID peak = RCS x (VB x CX)/tON = 1 x (140 V x 80 pF)/10 ns = 1.12 (V) A filter with the following constants was then inserted. RA = RB = 1 k, CA = 1000 pF At this time, the detectable drain current is 0.48 (A), and the filter cutoff frequency is 318 (kHz). Note that increasing a filter time constant is effective against noise, but if the value is too large, error will arise in the switch element current detection level. Rev.4.00 Jun 15, 2005 page 36 of 39 HA16107P/FP, HA16108P/FP 3. IC Heat Emission Problem and Countermeasures (HA16107 Series, HA16114 Series) While the above ICs can directly drive a power MOS FET gate, if the method of use is not thoroughly investigated, there will be a tendency for the gate drive power to increase and a problem of heat emission by the IC may occur. This section should therefore be noted and appropriate measures taken to prevent this kind of problem. 1. Power MOS FET Drive Characteristics When power MOS FET drive is performed, in order to lower the on-resistance sufficiently, overdrive is normally performed with a voltage considerably higher than 5 V, for example, such as the 15 V power supply voltage of the IC. At this time, the power that should be supplied from the IC to the power MOS FET is determined by gate load Qg in Figure 9. 2. IC Heat-Emission Power Calculation (Figure 9) The power that contributes to IC heat emission is calculated by means of the following equation. Pd = VIN IQ + 2Qg VIN f Where VIN : Power supply voltage of IC IQ : Operating current of IC (unloaded) Qg : Above-mentioned gate load f : Operating frequency of IC The coefficient, 2, indicates that gate discharging also contributes to heat emission. 4. Power MOS FET Gate Resistance Design (HA16107 Series, HA16114 Series) There are the following three purposes in connecting a gate resistance, and the circuit is generally of the kind shown in Figure 8. (1) To suppress peak current due to gate charging (2) To protect IC output pins (3) To provide drive appropriate to power MOS FET input characteristics DG To transformer OUT IC output pin RG1 RG2 Power MOS FET CS RCS Figure 8 Gate Drive Circuit Rev.4.00 Jun 15, 2005 page 37 of 39 HA16107P/FP, HA16108P/FP This gate resistance RG is given by the following equation. RG = (VG/IG) - (VG x tON)/Qg, RG = RG1 + RG2 IG : Gate input peak current VG : Gate drive voltage wave high value (equal to power supply voltage of IC) tON : Power MOS FET turn-on time tOFF : Power MOS FET turn-off time Qg : Gate charge according to Figure 9 VDS (V) VDS VGS VGS (V) Qg (nc) Figure 9 Power MOS FET Dynamic Input Characteristics Refer to the power MOS FET catalog for information on tON and Qg. By dividing RG into RG1 and RG2, it is possible for speed to be slowed when the power MOS FET is on, and increased when off. Power MOS FET on and off times when mounted, tON' and tOFF', are as follows. tON' = tON + Qg(RG1 + RG2)/VG tOFF' = tOFF + Qg RG2/VG <Actual Example> When driving a power MOS FET and 2SK1567 with an HA16107, etc. (RG1 = 100 , RG2 = 20 , VG = 15 V) tON' = 70 ns + 36 nc (100 + 20 )/(15 V) = 360 (ns) tOFF' = 135 ns + 36 nc (20 )/(15 V) = 183 (ns) Generally, the gate resistance values in the case of this circuit configuration are on the order of 100 to 470 for RG1 and 10 to 47 for RG2. Rev.4.00 Jun 15, 2005 page 38 of 39 HA16107P/FP, HA16108P/FP Package Dimensions As of January, 2003 19.20 20.00 Max Unit: mm 7.40 Max 9 6.30 16 1 8 1.3 1.11 Max 2.54 Min 5.06 Max 0.48 0.10 0.51 Min 2.54 0.25 7.62 + 0.13 0.25 - 0.05 0 - 15 Package Code JEDEC JEITA Mass (reference value) JEITA Package Code P-SOP16-5.5x10.06-1.27 RENESAS Code PRSP0016DH-A *1 Previous Code FP-16DA DP-16 Conforms Conforms 1.07 g MASS[Typ.] 0.24g NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. D F 16 9 bp c c1 HE *2 E b1 Index mark Reference Symbol Terminal cross section 1 Z *3 bp Nom Max D 10.06 10.5 E 5.5 A2 8 e Dimension in Millimeters Min x A1 M 0.00 0.10 0.20 0.34 0.42 0.50 2.20 A L1 b p b 1 A c A1 y L Detail F 0.22 0.27 0.20 1 0 HE 7.50 8 7.80 8.00 1.27 e x 0.12 y 0.15 Z 0.80 0.50 L L Rev.4.00 Jun 15, 2005 page 39 of 39 0.40 0.17 c 1 0.70 1.15 0.90 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. 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