November 2009 Doc ID 5989 Rev 9 1/8
8
BUV48A
High voltage fast switching NPN power transistor
Features
■High current capability
■Fast switching speed
Applications
■Switching mode power supplies
■Flyback and forward single transistor low power
converter
Description
The device is a multiepitaxial mesa NPN
transistor mounted in TO-247 plastic package.
It is intended for switching and industrial
applications from single and three-phase mains.
Figure 1. Internal schematic diagram
1
2
3
TO-247
Table 1. Device summary
Order code Marking Package Packaging
BUV48A BUV48A TO-247 Tube
www.st.com
Absolute maximum ratings BUV48A
2/8 Doc ID 5989 Rev 9
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCER Collector-emitter voltage (RBE = 10 Ω) 1000 V
VCES Collector-emitter voltage (VBE = 0) 1000 V
VCEO Collector-emitter voltage (IB = 0) 450 V
VEBO Emitter-base voltage (IC = 0) 7 V
ICCollector current 15 A
ICM Collector peak current 30 A
ICP Collector peak current non repetitive (tp < 20 µs) 55 A
IBBase current 4 A
IBM Base peak current 20 A
PTOT Total dissipation at Tcase = 25 °C 125 W
TSTG Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case __max 1 °C/W
BUV48A Electrical characteristics
Doc ID 5989 Rev 9 3/8
2 Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 1000 V
VCE = 1000 V Tc = 125 °C
200
2
µA
mA
ICER
Collector cut-off current
(RBE = 10Ω)
VCE = 1000 V
VCE = 1000 V Tc = 125 °C
500
4
µA
mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter
sustaining voltage
(IB = 0)
IC = 200 mA 450 V
VEBO
Emitter-base voltage
(IC = 0) IE = 50 mA 7 30 V
VCE(sat)(1) Collector-emitter
saturation voltage
IC = 8 A IB = 1.6 A
IC = 12 A IB = 2.4 A
1.5
5
V
V
VBE(sat)(1) Base-emitter saturation
voltage IC = 8 A IB = 1.6 A 1.6 V
hFE (1) DC current gain IC = 8 A VCE = 5 V 8
ton
ts
tf
Resistive load
Turn-on time
Storage time
Fall time
VCC = 150 V IC = 8 A
IB1 = -IB2 = 1.6 A
1
3
0.8
µs
µs
µs
ts
tf
Inductive load
Storage time
Fall time
VCC = 300 V IC = 8 A
VBE = -5 V IB1 = 1.6 A
LB = 3 µH
3
0.13
µs
µs
ts
tf
Inductive load
Storage time
Fall time
VCC = 300 V IC = 8 A
VBE = -5 V IB1 = 1.6 A
LB = 3 µH TC = 125 °C
5
0.4
µs
µs
Electrical characteristics BUV48A
4/8 Doc ID 5989 Rev 9
2.1 Test circuit
Figure 2. Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
Figure 3. Inductive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
3. Fast recovery rectifier
BUV48A Package mechanical data
Doc ID 5989 Rev 9 5/8
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package mechanical data BUV48A
6/8 Doc ID 5989 Rev 9
Dim. mm.
Min. Typ. Max.
A4.855.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b23.0 3.40
c0.40 0.80
D19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S5.50
TO-247 mechanical data
BUV48A
8/8 Doc ID 5989 Rev 9
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