R5480x Series 1-Cell Li-Ion Battery Protection IC NO.EA-308-170516 OUTLINE The R5480x is a protection IC for over-charge of rechargeable Lithium-ion (Li+)/Lithium polymer battery. The R5480x can detect over-charge, over-discharge, excess-discharge current, and excess-charge current of one-cell Lithium-ion (Li+)/Lithium polymer battery. The external resistor of RSENSE pin allows a highaccuracy detection for excess current. The supply current after detecting over-discharge is suppressed as much as possible by stopping the internal circuit. FEATURES High Voltage Tolerant Process Absolute Maximum Ratings ************************************* 30 V Low supply current Supply current (At normal mode) *******************************Typ. 4.0 A Standby current *****************************************************Max. 0.1 A High accuracy detector threshold Over-charge detector ********************************************** 20 mV Over-discharge detector ****************************************** 35 mV Excess discharge-current detector ***************************** 15% Excess charge-current detector********************************* 15% Variety of detector threshold Over-charge detector threshold ********************************* 4.1 V to 4.5 V step of 0.005 V Over-discharge detector threshold ***************************** 2.1 V to 3.0 V step of 0.005 V Excess discharge-current threshold *************************** 0.030 V to 0.048 V step of 0.001 V Excess charge-current threshold ******************************* -0.030V to -0.020 V step of 0.001 V Internal fixed Output delay time Over-charge detector Output Delay *************************** 1.0 s Over-discharge detector Output Delay *********************** 20 ms/132 ms Excess discharge-current detector Output Delay ********** 12 ms Excess charge-current detector Output Delay************** 16 ms/8 ms Short Circuit detector Output Delay *************************** 250 s Output Delay Time Shortening Function At COUT is "H", if V- level is set at -2.0 V, the Output Delay time of detect the over-charge and over-discharge can be reduced (Delay Time for over-charge becomes about 1/100 of normal state). Conditions for release over-charge detector **************** Latch type Conditions for release over-discharge detector ************ Latch type 0 V-battery charge option ***************************************Unacceptable Small package *******************************************************DFN(PLP)1414-6, DFN1814-6C 1 R5480x NO.EA-308-170516 APPLICATIONS Li+/Li Polymer protector of over-charge, over-discharge, excess-current for battery pack High precision protectors for smart-phones and any other gadgets using on board Li+/Li Polymer battery SELECTION GUIDE The over-charge and the delay time are user-selectable options. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5480Kxxx$-TR DFN(PLP)1414-6 5,000 pcs Yes Yes R5480Lxxx$-TR DFN1814-6C 5,000 pcs Yes Yes xxx: Set voltage version $: Delay time version Version tVDET1 (s) tVDET2 (ms) tVDET3 (ms) tVDET4 (ms) tSHORT (s) C 1 20 12 16 250 U 1 132 12 8 250 Return from Return from Over-charge Over-discharge 0-V Charge VSHORT G Latch Latch NG 0.500 V L Latch Latch NG 0.180 V M Latch Latch NG 0.140 V : Function version Version 2 R5480x NO.EA-308-170516 Product Code List Product Code Table VDET1 VREL1 VDET2 VREL2 VDET3 VDET4 tVDET2 tVDET3 tVDET4 tSHORT (V) (V) (V) (V) (V) (V) (V) (s) (ms) (ms) (ms) (s) Charge R5480x228CG 4.405 - 2.400 - 0.032 -0.020 0.500 1 20 12 16 250 NG R5480x240CG 4.280 - 2.800 - 0.032 -0.020 0.500 1 20 12 16 250 NG R5480x241CG 4.405 - 2.400 - 0.042 -0.020 0.500 1 20 12 16 250 NG R5480x247CG 4.425 - 2.400 - 0.032 -0.020 0.500 1 20 12 16 250 NG R5480x257CL 4.425 - 2.400 - 0.034 -0.022 0.180 1 20 12 16 250 NG R5480x260CL 4.280 - 2.400 - 0.032 -0.030 0.180 1 20 12 16 250 NG R5480x261CL 4.280 - 2.700 - 0.040 -0.030 0.180 1 20 12 16 250 NG R5480x262CL 4.405 - 2.400 - 0.040 -0.030 0.180 1 20 12 16 250 NG R5480x266CL 4.475 - 2.800 - 0.040 -0.030 0.180 1 20 12 16 250 NG R5480x267CL 4.475 - 2.400 - 0.034 -0.022 0.180 1 20 12 16 250 NG R5480x228CL 4.405 - 2.400 - 0.032 -0.022 0.180 1 20 12 16 250 NG R5480x275CL 4.230 - 2.800 - 0.048 -0.030 0.180 1 20 12 16 250 NG R5480x277CL 4.425 - 2.800 - 0.040 -0.030 0.180 1 20 12 16 250 NG R5480x278CL 4.425 - 2.800 - 0.034 -0.022 0.180 1 20 12 16 250 NG R5480x283CL 4.280 - 2.800 - 0.030 -0.020 0.180 1 20 12 16 250 NG R5480x284CL 4.425 - 2.400 - 0.040 -0.030 0.180 1 20 12 16 250 NG R5480x285CL 4.280 - 2.400 - 0.040 -0.030 0.180 1 20 12 16 250 NG R5480x286CL 4.405 - 2.800 - 0.040 -0.030 0.180 1 20 12 16 250 NG R5480x287CL 4.280 - 2.600 - 0.048 -0.030 0.180 1 20 12 16 250 NG R5480x324CL 4.425 - 2.500 - 0.030 -0.030 0.180 1 20 12 16 250 NG R5480x326CL 4.280 - 2.800 - 0.048 -0.030 0.180 1 20 12 16 250 NG R5480x348CL 4.475 - 2.600 - 0.040 -0.030 0.180 1 20 12 16 250 NG R5480x342UM 4.425 - 2.800 - 0.030 -0.023 0.140 1 132 12 8 250 NG R5480x349CL 4.475 - 2.600 - 0.048 -0.030 0.180 1 20 12 16 250 NG Code VSHORT tVDET1 0-V 3 R5480x NO.EA-308-170516 PIN DESCRIPTION 6 5 4 1 2 3 DFN(PLP)1414-6 Pin Configuration 6 5 4 1 2 3 DFN1814-6C Pin Configuration DFN(PLP)1414-6 Pin Description Pin No. Symbol Description 1 VSS VSS pin. Ground pin for the IC 2 VDD Power supply pin, the substrate voltage level of the IC 3 RSENSE Input of overcurrent detection 4 V- Pin for charger negative input 5 COUT Output of over-charge detection, CMOS output 6 DOUT Output of over-discharge detection, CMOS output DFN1814-6C Pin Description 4 Pin No. Symbol Description 1 V- 2 COUT Output of over-charge detection, CMOS output 3 DOUT Output of over-discharge detection, CMOS output 4 VSS VSS pin. Ground pin for the IC 5 VDD Power supply pin, the substrate voltage level of the IC 6 RSENSE Pin for charger negative input Input of overcurrent detection R5480x NO.EA-308-170516 ABSOLUTE MAXIMUM RATINGS (Ta = 25C, VSS = 0 V) Absolute Maximum Ratings Symbol Item Rating Unit V VDD Supply Voltage 30 V- V- Pin Voltage VDD - 30 to VDD + 0.3 RSENSE RSENSE Pin Voltage VSS - 0.3 to VDD + 0.3 VCOUT COUT Pin Voltage VDD - 30 to VDD + 0.3 V VDOUT DOUT Pin Voltage VSS - 0.3 to VDD + 0.3 V 150 mW V V V PD Power Dissipation (Standard Land Pattern) Tj Junction Temperature Range -40 to 125 C Tstg Storage Temperature Range -55 to 125 C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Item Rating Unit VDD Operating Input Voltage -0.3 to 12 V Ta Operating Temperature Range -40 to 85 C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 5 R5480x NO.EA-308-170516 ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Ta = 25C) R5480x Electrical Characteristics Symbol VDD1 VNOCHG VDET1 Item Operating Input Voltage Maximum Operating Voltage for Inhibition of Charger Over-charge Threshold Voltage Conditions VDD - VSS Voltage Defined as VDD - VSS, VDD - V- = 4 V R1 = 330 Min. Typ. 1.5 0.4 0.7 Max. Unit 5.0 V 1.0 V VDET1 VDET1 VDET1 -0.020 +0.020 0.7 1.0 1.3 11 16 21 VDET2 VDET2 VDET2 -0.035 +0.035 V tVDET1 tVREL1 Output Delay of Over-charge Release Delay for VD1 VDD = 3.6 V4.5 V VDD = 4 V, V- = 0 V1 V VDET2 Over-discharge Threshold Detect falling edge of supply voltage tVDET2 Output Delay of Overdischarge VDD = 3.6 V2.0 V 14 20 26 ms VDD = 3 V, V- = 3 V0 V Detect rising edge of 'RSENSE' pin voltage, V- = VRSENSE VDD = 3.0 V, VRSENSE = 0 V to 0.4 V, V- = VRSENSE VDD = 3.0 V, V- = 3 V to 0 V V- = VRSENSE 0.7 1.2 1.7 ms tVREL2 VDET3 tVDET3 tVREL3 Release Delay for VD2 Excess discharge-current threshold Output delay of excess discharge-current Output delay of release from excess discharge-current Short protection voltage (R5480xxxxCG) VSHORT Short protection voltage (R5480xxxxCL) Short protection voltage (R5480xxxxUM) tSHORT RSHORT VDET4 tVDET4 tVREL4 VDS VOL1 VOH1 VOL2 VOH2 IDD Output Delay of Short protection Reset resistance for excess discharge-current protection Excess charge-current threshold Output delay of excess charge-current Output delay of release from excess charge-current Delay Time Shortening Mode Voltage Nch ON-Voltage of COUT Pch ON-Voltage of COUT Nch ON-Voltage of DOUT Pch ON-Voltage of DOUT Supply Current VDET3 x0.85 VDET3 VDET3 x1.15 s ms V V 8 12 16 ms 0.7 1.2 1.7 ms VDD = 3.0 V, VRSENSE = V- 0.41 0.50 0.59 V VDD = 3.0 V, VRSENSE = V- 0.135 0.18 0.225 V VDD = 3.0 V, VRSENSE = V- 0.095 0.14 0.185 V VDD = 3.0 V, VRSENSE = 0 V to 3 V, V- = VRSENSE 180 250 425 s VDD = 3.6 V, V- = 1.0 V 20 45 70 k Detect falling edge of 'RSENSE' pin VDET4 voltage, V- = VRSENSE x1.15 VDD = 3.0 V, VRSENSE = 0 V to -0.3 V, 11 V- = VRSENSE VDD = 3.0 V, V- = -1 V to 0 V 0.7 V- = VRSENSE VDD = 3.6 V IOL = 50 A, VDD = 4.5 V IOH = -50 A, VDD = 3.9 V IOL = 50 A, VDD = 2.0 V IOH = -50 A, VDD = 3.9 V VDD = 3.9 V, V- =0 V VDD = 2.0 V -2.6 3.4 3.4 VDET4 VDET4 x0.85 V 16 21 ms 1.2 1.7 ms -2.0 -1.4 V 0.4 3.7 0.2 3.7 4.0 0.5 V V V V A A 0.5 8.0 0.1 ISTANDBY Standby Current Considering of variation in process parameters, we compensate for this characteristic related to temperature by laser-trim, however, this specification is guaranteed by design, not mass production tested. 6 R5480x NO.EA-308-170516 ELECTRICAL CHARACTERISTICS (continued) (Ta = -20C to 60C) R5480x Electrical Characteristics Symbol VDD1 VNOCHG VDET1 Item Operating Input Voltage Maximum Operating Voltage for Inhibition of Charger Over-charge Threshold Voltage Conditions VDD - VSS Voltage Defined as VDD - VSS, VDD - V- = 4 V R1 = 330 Typ. 1.5 0.27 VDET1 -0.025 0.67 10.7 VDET2 -0.040 0.7 VDET1 Unit 5.0 V 1.1 V VDET1 +0.025 1.55 24.8 VDET2 +0.040 s ms V Output Delay of Over-charge VDET2 Over-discharge Threshold tVDET2 Output Delay of Overdischarge VDD = 3.6 V2.0 V 13.4 20 31 ms tVREL2 Release Delay for VD2 VDD = 3 V, V- = 3 V0 V 0.65 1.2 1.86 ms VDET3 Excess discharge-current threshold tVDET3 Output delay of excess discharge-current Detect rising edge of 'RSENSE' pin voltage, V- = VRSENSE VDD = 3.0 V, VRSENSE = 0 V to 0.4 V, V- = VRSENSE VDD = 3.0 V, V- = 3 V to 0 V V- = VRSENSE tVREL3 Output delay of release from excess discharge-current Short protection voltage (R5480xxxxCG) VSHORT Short protection voltage (R5480xxxxCL) Short protection voltage (R5480xxxxUM) tSHORT RSHORT VDET4 tVDET4 tVREL4 VDS VOL1 VOH1 VOL2 VOH2 IDD Output Delay of Short protection Reset resistance for excess discharge-current protection Excess charge-current threshold Output delay of excess charge-current Output delay of release from excess charge-current Delay Time Shortening Mode Voltage Nch ON-Voltage of COUT Pch ON-Voltage of COUT Nch ON-Voltage of DOUT Pch ON-Voltage of DOUT Supply Current VDET3 x0.83 1.0 16 Max. tVDET1 tVREL1 Release Delay for VD1 VDD = 3.6 V4.5 V VDD = 4 V, V- = 0 V1 V Detect falling edge of supply voltage Min. VDET2 VDET3 VDET3 x1.17 V V 7.5 12 18.6 ms 0.65 1.2 1.86 ms VDD = 3.0 V, VRSENSE = V- 0.40 0.50 0.60 V VDD = 3.0 V, VRSENSE = V- 0.130 0.18 0.230 V VDD = 3.0 V, VRSENSE = V- 0.085 0.14 0.195 V VDD = 3.0 V, VRSENSE = 0 V to 3 V, V- = VRSENSE 160 250 490 s VDD = 3.6 V, V- = 1.0 V 17.3 45 73.3 k Detect falling edge of 'RSENSE' pin voltage, V- = VRSENSE VDD = 3.0 V, VRSENSE = 0 V to -0.3 V, V- = VRSENSE VDD = 3.0 V, V- = -1 V to 0 V V- = VRSENSE VDD = 3.6 V IOL = 50 A, VDD = 4.5 V IOH = -50 A, VDD = 3.9 V IOL = 50 A, VDD = 2.0 V IOH = -50 A, VDD = 3.9 V VDD = 3.9 V, V- =0 V VDD = 2.0 V ISTANDBY Standby Current All of these specifications are guaranteed by design, not tested in mass production. VDET4 x1.17 VDET4 VDET4 x0.83 V 10.7 16 24.8 ms 0.65 1.2 1.86 ms -2.7 -2.0 -1.2 V 0.4 3.7 0.2 3.7 4.0 0.5 V V V V A A 3.4 3.4 0.5 8.7 0.12 7 R5480x NO.EA-308-170516 ELECTRICAL CHARACTERISTICS (continued) (Ta = -40C to 85C) R5480x Electrical Characteristics Symbol VDD1 VNOCHG VDET1 Item Operating Input Voltage Maximum Operating Voltage for Inhibition of Charger Over-charge Threshold Voltage tVDET1 tVREL1 Output Delay of Over-charge VDET2 Over-discharge Threshold tVDET2 Output Delay of Overdischarge tVREL2 VDET3 tVDET3 tVREL3 Release Delay for VD1 Release Delay for VD2 Excess discharge-current threshold Output delay of excess discharge-current Output delay of release from excess discharge-current Short protection voltage (R5480xxxxCG) VSHORT Short protection voltage (R5480xxxxCL) Short protection voltage (R5480xxxxUM) tSHORT RSHORT VDET4 tVDET4 tVREL4 VDS VOL1 VOH1 VOL2 VOH2 IDD Output Delay of Short protection Reset resistance for excess discharge-current protection Excess charge-current threshold Output delay of excess charge-current Output delay of release from excess charge-current Delay Time Shortening Mode Voltage Nch ON-Voltage of COUT Pch ON-Voltage of COUT Nch ON-Voltage of DOUT Pch ON-Voltage of DOUT Supply Current Conditions VDD - VSS Voltage Defined as VDD - VSS, VDD - V- = 4 V Typ. 1.5 0.27 0.7 Max. Unit 5.0 V 1.15 V VDD = 3.6 V4.5 V VDD = 4 V, V- = 0 V1 V Detect falling edge of supply voltage VDET1 -0.036 0.67 10.51 VDET2 -0.043 VDD = 3.6 V2.0 V 13.28 20 33.29 ms 0.65 1.2 2.056 ms R1 = 330 VDD = 3 V, V- = 3 V0 V Detect rising edge of 'RSENSE' pin voltage, V- = VRSENSE VDD = 3.0 V, VRSENSE = 0 V to 0.4 V, V- = VRSENSE VDD = 3.0 V, V- = 3 V to 0 V V- = VRSENSE VDET3 x0.8 VDET1 1.0 16 VDET2 VDET3 VDET1 +0.035 1.57 26.51 VDET2 +0.040 s ms VDET3 x1.2 V V V 7.5 12 20.15 ms 0.65 1.2 2.067 ms VDD = 3.0 V, VRSENSE = V- 0.40 0.50 0.60 V VDD = 3.0 V, VRSENSE = V- 0.130 0.18 0.230 V VDD = 3.0 V, VRSENSE = V- 0.085 0.14 0.195 V VDD = 3.0 V, VRSENSE = 0 V to 3 V, V- = VRSENSE 160 250 506.7 s VDD = 3.6 V, V- = 1.0 V 17.3 45 77.6 k Detect falling edge of 'RSENSE' pin voltage, V- = VRSENSE VDD = 3.0 V, VRSENSE = 0 V to -0.3 V, V- = VRSENSE VDD = 3.0 V, V- = -1 V to 0 V V- = VRSENSE VDET4 x1.17 VDET4 VDET4 x0.83 V 10.38 16 26.57 ms 0.65 1.2 2.068 ms VDD = 3.6 V -2.7 -2.0 -1.2 V 0.4 3.7 0.2 3.7 4.0 0.552 V V V V A A IOL = 50 A, VDD = 4.5 V IOH = -50 A, VDD = 3.9 V IOL = 50 A, VDD = 2.0 V IOH = -50 A, VDD = 3.9 V VDD = 3.9 V, V- =0 V VDD = 2.0 V ISTANDBY Standby Current All of these specifications are guaranteed by design, not tested in mass production. 8 Min. 3.318 3.389 0.515 9.25 0.12 R5480x NO.EA-308-170516 APPLICATION INFORMATION Typical Application Circuit R1 330 VDD C1 0.1F R5480 VSS RSENSE DOUT V- COUT R2 1k R3 10m R1 and C1 stabilize a supply voltage to the R5480. A recommended R1 value is equal or less than 1k. A large value of R1 makes detection voltage shift higher because of the conduction current flowed in the R5480x. Further, to stabilize the operation of R5480x, use the C1 with the value of 0.01F or more. R1 and R2 can operate also as parts for current limit circuit against reverse charge or applying a charger with excess charging voltage to the R5480x, battery pack. While small value of R1 and R2 may cause over power dissipation rating of the R5480x, therefore a total of "R1+R2" should be 1k or more. Besides, if a large value of R2 is set, release from over-discharge by connecting a charger might not be possible. Recommended R2 value is equal or less than 10k. R3 is a resistor for sensing an excess current. If the resistance value is too large, power loss becomes also large. By the excess current, if the R3 is not appropriate, the power loss may be beyond the power dissipation of R3. Choose an appropriate R3 according to the cell specification. The typical application circuit diagram is just an example. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary. 9 R5480x NO.EA-308-170516 Over-voltage and the over current beyond the absolute maximum rating should not be forced to the protection IC and external components. Although the short protection circuit is built in the IC, if the positive terminal and the negative terminal of the battery pack are short, during the delay time of short limit detector, large current flows through the FET. Select an appropriate FET with large enough current capacity to prevent the IC from burning damage. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to humans or damages to property resulting from such failure, users should be careful enough to incorporate safe measures in design, such as redundancy, fire-containment, and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. If the positive terminal and the negative terminal of the battery pack are short, even though the short protection circuit is built in the IC, during the delay time until detecting the short circuit, a large current may flow through the FET. Select an FET with large enough current capacity in order to endure the large current during the delay time. 10 R5480x NO.EA-308-170516 Sense Resistance and On-resistance of the MOSFET Selection Guideline Short mode is detected by the current base or the relation between VDD at short and total on-resistance of external MOSFETs for COUT and DOUT. If short must be detected by the current base determined by VSHORT and R3, the next formula must be true, otherwise, the short current limit becomes (VDD - 0.9)/(R3 + RSS (on)) VDD - 0.9 R3 + RSS (on) VSHORT R3 VSHORT = 0.5 V (R5480xxxxCG), 0.18 V (R5480xxxxCL), 0.14 V (R5480xxxxUM) R3 = External current sense resistance () RSS (on) = external MOSFETs' total on-resistance () VDD = VDD level at short mode. If VDD goes down by the short current, the lowest level is VDD. Ex. 1 As the RSENSE, in case that the 10 m is selected as R3 and if the VDD becomes 3.0 V, to detect short at 50 A with VSHORT = 0.5 V, the RSS (on) must be 32 m or lower. Ex. 2 As the RSENSE, in case the 20 m is selected as R3 and if the VDD becomes 3.0 V, to detect short at 25 A with VSHORT = 0.5 V, the RSS (on) must be 64 m or lower. If the RSS (on) value is higher than the value calculated by this formula, the short current limit will be less than the desired value. 11 PACKAGE DIMENSIONS DFN(PLP)1414-6 Ver. A DFN(PLP)1414-6 Package Dimensions * The tab on the bottom of the package shown by blue circle is No Connection. i PACKAGE DIMENSIONS DFN1814-6C Ver. A DFN1814-6C Package Dimensions (Unit: mm) i 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to Ricoh sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written consent of Ricoh. 3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise taking out of your country the products or the technical information described herein. 4. The technical information described in this document shows typical characteristics of and example application circuits for the products. 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We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. Anti-radiation design is not implemented in the products described in this document. 8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 10. 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