R5480x Series
1
-Cell Li-Ion Battery Protection IC
NO.EA-308-170516
1
OUTLINE
The R5480x is a protection IC for over-charge of rechargeable Lithium-ion (Li+)/Lithium polymer battery. The
R5480x can detect over-charge, over-discharge, excess-discharge current, and excess-charge current of
one-cell Lithium-ion (Li+)/Lithium polymer battery. The external resistor of RSENSE pin allows a high-
accuracy detection for excess current. The supply current after detecting over-discharge is suppressed as
much as possible by stopping the internal circuit.
FEATURES
High V oltage Tolerant Process
Absolute Maximum Ratings ····································· 30 V
Low supply current
Supply current (At normal mode) ·······························Typ. 4.0 µA
Standby current ·····················································Max. 0.1 µA
High accuracy detector threshold
Over-charge detec tor ·············································· ±20 mV
Over-discharge detector ·········································· ±35 mV
Excess d ischarge-current detec tor ····························· ±15%
Excess ch arge-current detector ································· ±15%
Variety of detector threshold
Over-charge detector threshold ································· 4.1 V to 4.5 V step of 0.005 V
Over-discharge detector threshold ····························· 2.1 V to 3.0 V step of 0.005 V
Excess d ischarge-current thr es hold ··························· 0.030 V to 0.048 V step of 0.001 V
Excess ch arge-current threshold ······························· −0.030V to −0.020 V step of 0.001 V
Internal fixed Output delay time
Over-charge detector Output Delay ··························· 1.0 s
Over-discharge detector Output Delay ······················· 20 ms/132 ms
Excess d ischarge-current detector Output Delay ·········· 12 ms
Excess ch arge-current detector Output Delay ·············· 16 ms/8 ms
Short Circuit detector Output Delay ··························· 250 µs
Output Delay Time Shortening Function
At COUT is “H”, if V - level is set at −2.0 V, the Output Delay time of detect the over-charge and over-discharge
can be reduced (Delay Time for over-charge becomes about 1/100 of normal state).
Conditions for release over-charge detector ················ Latch type
Conditions for release over-discharge detec t or ············ Latch type
0 V-battery charge option ·······································Unacceptable
Small package ·······················································DFN(PLP)1414-6, DFN1814-6C
R5480x
NO.EA-308-170516
2
APPLICATIONS
Li+/Li Polymer protector of over-charge, over-discharge, excess-current for battery pack
High precision protectors for smart-phones and any other gadgets us ing on board Li+/Li Polymer battery
SELECTI O N G UIDE
The over-charge and the delay time are user-selectable options.
Selection Guide
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
R5480Kxxx$∗-TR DFN(PLP)1414-6 5,000 pcs Yes Yes
R5480Lxxx$∗-TR DFN1814-6C 5,000 pcs Yes Yes
xxx: Set voltage version
$: Delay time version
Version
VDET1
t
VDET2
(ms)
t
VDET3
(ms)
t
VDET4
(ms)
t
SHORT
(μs)
C 1 20 12 16 250
U 1 132 12 8 250
∗: Function version
Version Return from
Over-charge
Return fro m
Over-discharge 0-V Charge VSHORT
G Latch Latch NG 0.500 V
L Latch Latch NG 0.180 V
M Latch Latch NG 0.140 V
R5480x
NO.EA-308-170516
3
Product Code List
Product Code Table
Code VDET1
(V)
VREL1
(V)
VDET2
(V)
VREL2
(V)
VDET3
(V)
VDET4
(V)
VSHORT
(V)
tVDET1
(s)
tVDET2
(ms)
tVDET3
(ms)
tVDET4
(ms)
tSHORT
(μs)
0-V
Charge
R5480x228CG 4.405 - 2.400 - 0.032 -0.020 0.500 1 20 12 16 250 NG
R5480x240CG 4.280 - 2.800 - 0.032 -0.020 0.500 1 20 12 16 250 NG
R5480x241CG 4.405 - 2.400 - 0.042 -0.020 0.500 1 20 12 16 250 NG
R5480x247CG 4.425 - 2.400 - 0.032 -0.020 0.500 1 20 12 16 250 NG
R5480x257CL 4.425 - 2.400 - 0.034 -0.022 0.180 1 20 12 16 250 NG
R5480x260CL 4.280 - 2.400 - 0.032 -0.030 0.180 1 20 12 16 250 NG
R5480x261CL 4.280 - 2.700 - 0.040 -0.030 0.180 1 20 12 16 250 NG
R5480x262CL 4.405 - 2.400 - 0.040 -0.030 0.180 1 20 12 16 250 NG
R5480x266CL 4.475 - 2.800 - 0.040 -0.030 0.180 1 20 12 16 250 NG
R5480x267CL 4.475 - 2.400 - 0.034 -0.022 0.180 1 20 12 16 250 NG
R5480x228CL 4.405 - 2.400 - 0.032 -0.022 0.180 1 20 12 16 250 NG
R5480x275CL 4.230 - 2.800 - 0.048 -0.030 0.180 1 20 12 16 250 NG
R5480x277CL 4.425 - 2.800 - 0.040 -0.030 0.180 1 20 12 16 250 NG
R5480x278CL 4.425 - 2.800 - 0.034 -0.022 0.180 1 20 12 16 250 NG
R5480x283CL 4.280 - 2.800 - 0.030 -0.020 0.180 1 20 12 16 250 NG
R5480x284CL 4.425 - 2.400 - 0.040 -0.030 0.180 1 20 12 16 250 NG
R5480x285CL 4.280 - 2.400 - 0.040 -0.030 0.180 1 20 12 16 250 NG
R5480x286CL 4.405 - 2.800 - 0.040 -0.030 0.180 1 20 12 16 250 NG
R5480x287CL 4.280 - 2.600 - 0.048 -0.030 0.180 1 20 12 16 250 NG
R5480x324CL 4.425 - 2.500 - 0.030 -0.030 0.180 1 20 12 16 250 NG
R5480x326CL 4.280 - 2.800 - 0.048 -0.030 0.180 1 20 12 16 250 NG
R5480x348CL 4.475 - 2.600 - 0.040 -0.030 0.180 1 20 12 16 250 NG
R5480x342UM 4.425 - 2.800 - 0.030 -0.023 0.140 1 132 12 8 250 NG
R5480x349CL 4.475 - 2.600 - 0.048 -0.030 0.180 1 20 12 16 250 NG
R5480x
NO.EA-308-170516
4
PIN DESCRIPTION
5
4
2
3
1
6
5
4
2
3
1
6
DFN(PLP)1414-6 Pin Configuration
DFN1814-6C Pin Configuration
DFN(PLP)1414-6 Pin Description
Pin No. Symbol Description
1
VSS
VSS pin. Ground pin for the IC
2
VDD
Power supply pin, the substrate voltage level of the IC
3
RSENSE
Input of overcurrent detection
4
V−
Pin for charger negative input
5
COUT
Output of over-charge detection, CMOS output
6
DOUT
Output of over-disc har ge d etec ti on, CMO S out put
DFN1814-6C Pin Description
Pin No. Symbol Description
1
V−
Pin for charger negative input
2
COUT
Output of over-charge detection, CMOS output
3
DOUT
Output of over-disc har ge d etec ti on, CMO S out put
4
VSS
VSS pin. Ground pin for the IC
5
VDD
Power supply pin, the substrate voltage level of the IC
6
RSENSE
Input of overcurrent detection
R5480x
NO.EA-308-170516
5
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings (Ta = 25°C, VSS = 0 V)
Symbol
Item
Rating
Unit
VDD
Suppl y Voltage
30
V
V−
RSENSE
V− Pin Voltage
RSENSE Pin Voltage
VDD - 30 to VDD + 0.3
VSS - 0.3 to VDD + 0.3
V
V
V
VCOUT
VDOUT
COUT Pin Volt age
DOUT Pin Volt age
VDD - 30 to VDD + 0.3
VSS - 0.3 to VDD + 0.3
V
V
P
D
Power Dissip ati on (Standard Land Pattern)
150
mW
Tj
Junction Temperature Range
−40 to 125
°C
Tstg
Storage Temperature Range
−55 to 125
°C
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent
damages and may degrade the life time and safety for both device and system using the device in the field. The
functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS
Recommended Operating Conditions
Symbol
Item
Rating
Unit
VDD Operating Input Vo ltag e −0.3 to 12 V
Ta Operating Temperature Range −40 to 85 °C
RECOMMENDED OPERATING CONDITI ONS
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the recommended
operating conditions, even if when they are used over such conditions by momentary electronic nois e or surge. And
the semiconductor devices may receive serious damage when they continue to operate over the recommended
operating con dit ion s.
R5480x
NO.EA-308-170516
6
ELECTRICAL CHARACTERISTICS
R5480x Electrical Characteristics (Unless otherwise specified , Ta = 25°C)
Symbol
Item Conditions Min. Typ. Max. Unit
V
DD1
Operating Input Voltage
V
DD
- V
SS
1.5
5.0
V
VNOCHG
Maximum Operating Voltage
for Inhibition of Charger
Voltage Defined as
V
DD
- V
SS
, V
DD
- V− = 4 V
0.4 0.7 1.0 V
VDET1
Over-charge Threshold
Voltage R1 = 330 Ω
V
DET1
−0.020
VDET1
V
DET1
+0.020
V
t
VDET1
Output Delay of Over-charge
V
DD
= 3.6 V
→
4.5 V
0.7
1.0
1.3
s
t
VREL1
Release Delay for VD1
V
DD
= 4 V, V− = 0 V
→
1 V
11
16
21
ms
VDET2 Over-discharge T hr esh old Detect falling edge of supply voltage
V
DET2
−0.035
VDET2
V
DET2
+0.035
V
tVDET2
Output Delay of Over-
discharge VDD = 3.6 V→2.0 V 14 20 26 ms
t
VREL2
Release Delay for VD2
V
DD
= 3 V, V− = 3 V
→
0 V
0.7
1.2
1.7
ms
VDET3
Excess discharge-current
threshold
Detect rising edge of 'RSENSE' pi n
voltage, V− = VRSENSE
V
DET3
x0.85
VDET3
V
DET3
x1.15
V
tVDET3
Output delay of excess
discharge-current
V
DD
= 3.0 V, V
RSENSE
= 0 V to 0.4 V,
V− = VRSENSE
8 12 16 ms
tVREL3
Output delay of release from
excess discharge-current
V
DD
= 3.0 V, V- = 3 V to 0 V
V− = VRSENSE
0.7 1.2 1.7 ms
VSHORT
Short protection voltage
(R5480xxxxCG)
VDD = 3.0 V, VRSENSE = V− 0.41 0.50 0.59 V
Short protection voltage
(R5480xxxxCL)
VDD = 3.0 V, VRSENSE = V− 0.135 0.18 0.225 V
Short protection voltage
(R5480xxxxUM)
VDD = 3.0 V, VRSENSE = V− 0.095 0.14 0.185 V
tSHORT
Output Delay of Short
protection
V
DD
= 3.0 V, V
RSENSE
= 0 V to 3 V,
V− = VRSENSE
180 250 425 µs
RSHORT
Reset resistance for excess
discharge-current protection
VDD = 3.6 V, V− = 1.0 V 20 45 70 kΩ
VDET4
Excess charge-current
threshold
Detect falling edge of 'R
SENSE
' pin
voltage, V− = VRSENSE
V
DET4
x1.15
VDET4
V
DET4
x0.85
V
tVDET4
Output delay of excess
charge-current
V
DD
= 3.0 V, V
RSENSE
= 0 V to −0.3 V,
V− = VRSENSE
11 16 21 ms
tVREL4
Output delay of release from
excess charge-current
V
DD
= 3.0 V, V− = −1 V to 0 V
V− = VRSENSE
0.7 1.2 1.7 ms
VDS
Delay Time Shortening Mode
Voltage
VDD = 3.6 V −2.6 −2.0 −1.4 V
V
OL1
Nch ON-Voltage of C
OUT
I
OL
= 50 µA, V
DD
= 4.5 V
0.4
0.5
V
V
OH1
Pch ON-V olt age of COUT
I
OH
= −50 µA, V
DD
= 3.9 V
3.4
3.7
V
V
OL2
Nch ON-Voltage of D
OUT
I
OL
= 50 µA, V
DD
= 2.0 V
0.2
0.5
V
V
OH2
Pch ON-V olt age of DOUT
I
OH
= −50 µA, V
DD
= 3.9 V
3.4
3.7
V
I
DD
Supply Current
V
DD
= 3.9 V, V− =0 V
4.0
8.0
µA
I
STANDBY
Standby Current
V
DD
= 2.0 V
0.1
µA
Considerin g of v ar i atio n in process para meter s, we compensate f or t hi s characteristic re lated to temperature by laser-trim,
however, this specification is guaranteed by design, not mass production tested.
R5480x
NO.EA-308-170516
7
ELECTRICAL CHARACTERISTICS (continued)
R5480x Electrical Characteristics (Ta = −20°C to 60°C)
Symbol Item Conditions Min. Typ. Max. Unit
V
DD1
Operating Input Voltage
V
DD
- V
SS
1.5
5.0
V
VNOCHG
Maximum Operating Voltage
for Inhibition of Charger
Voltage Defined as
V
DD
- V
SS
, V
DD
- V− = 4 V
0.27 0.7 1.1 V
VDET1
Over-charge Threshold
Voltage
R1 = 330 Ω
V
DET1
−0.025
VDET1
V
DET1
+0.025
V
t
VDET1
Output Delay of Over-charge
V
DD
= 3.6 V
→
4.5 V
0.67
1.0
1.55
s
t
VREL1
Release Delay for VD1
V
DD
= 4 V, V− = 0 V
→
1 V
10.7
16
24.8
ms
VDET2 Over-discharge T hr esh old
Detect falling edge of supply
voltage
V
DET2
−0.040
VDET2
V
DET2
+0.040
V
tVDET2
Output Delay of Over-
discharge
VDD = 3.6 V→2.0 V 13.4 20 31 ms
t
VREL2
Release Delay for VD2
V
DD
= 3 V, V− = 3 V
→
0 V
0.65
1.2
1.86
ms
VDET3
Excess discharge-current
threshold
Detect rising edge of 'R
SENSE
' pin
voltage, V− = VRSENSE
V
DET3
x0.83
VDET3
V
DET3
x1.17
V
tVDET3 Output delay of excess
discharge-current
VDD = 3.0 V, VRSENSE = 0 V to 0.4
V, V− = VRSENSE
7.5 12 18.6 ms
tVREL3
Output delay of release from
excess discharge-current
V
DD
= 3.0 V, V- = 3 V to 0 V
V− = VRSENSE
0.65 1.2 1.86 ms
VSHORT
Short protection voltage
(R5480xxxxCG)
VDD = 3.0 V, VRSENSE = V− 0.40 0.50 0.60 V
Short protection voltage
(R5480xxxxCL)
VDD = 3.0 V, VRSENSE = V− 0.130 0.18 0.230 V
Short protection voltage
(R5480xxxxUM)
VDD = 3.0 V, VRSENSE = V− 0.085 0.14 0.195 V
tSHORT
Output Delay of Short
protection
V
DD
= 3.0 V, V
RSENSE
= 0 V to 3 V,
V− = VRSENSE
160 250 490 µs
RSHORT
Reset resistance for excess
discharge-current protection
VDD = 3.6 V, V− = 1.0 V 17.3 45 73.3 kΩ
VDET4
Excess charge-current
threshold
Detect falling edge of 'R
SENSE
' pin
voltage, V− = VRSENSE
V
DET4
x1.17
VDET4
V
DET4
x0.83
V
tVDET4
Output delay of excess
charge-current
V
DD
= 3.0 V , V
RSENSE
= 0 V to −0.3
V, V− = VRSENSE
10.7 16 24.8 ms
tVREL4
Output delay of release from
excess charge-current
V
DD
= 3.0 V, V− = −1 V to 0 V
V− = VRSENSE
0.65 1.2 1.86 ms
VDS
Delay Time Shortening Mode
Voltage
VDD = 3.6 V −2.7 −2.0 −1.2 V
V
OL1
Nch ON-Voltage of C
OUT
I
OL
= 50 µA, V
DD
= 4.5 V
0.4
0.5
V
V
OH1
Pch ON-V olt age of COUT
I
OH
= −50 µA, V
DD
= 3.9 V
3.4
3.7
V
V
OL2
Nch ON-Voltage of D
OUT
I
OL
= 50 µA, V
DD
= 2.0 V
0.2
0.5
V
V
OH2
Pch ON-V olt age of DOUT
I
OH
= −50 µA, V
DD
= 3.9 V
3.4
3.7
V
I
DD
Supply Current
V
DD
= 3.9 V, V− =0 V
4.0
8.7
µA
I
STANDBY
Standby Current
V
DD
= 2.0 V
0.12
µA
All of these specifications are guaranteed by design, not tested in mass production.
R5480x
NO.EA-308-170516
8
ELECTRICAL CHARACTERISTICS (continued)
R5480x Electrical Characteristics (Ta = −40°C to 85°C)
Symbol Item Conditions Min. Typ. Max. Unit
V
DD1
Operating Input Voltage
V
DD
- V
SS
1.5
5.0
V
VNOCHG Maximum Operating Voltage
for Inhibition of Charger
Voltage Defined as
V
DD
- V
SS
, V
DD
- V− = 4 V
0.27 0.7 1.15 V
VDET1
Over-charge Threshold
Voltage R1 = 330 Ω
V
DET1
−0.036
VDET1
V
DET1
+0.035
V
t
VDET1
Output Delay of Over-charge
V
DD
= 3.6 V
→
4.5 V
0.67
1.0
1.57
s
t
VREL1
Release Delay for VD1
V
DD
= 4 V, V− = 0 V
→
1 V
10.51
16
26.51
ms
VDET2 Over-discharge T hr esh old
Detect falling edge of supply
voltage
V
DET2
−0.043
VDET2
V
DET2
+0.040
V
tVDET2
Output Delay of Over-
discharge VDD = 3.6 V→2.0 V 13.28 20 33.29 ms
t
VREL2
Release Delay for VD2
V
DD
= 3 V, V− = 3 V
→
0 V
0.65
1.2
2.056
ms
VDET3
Excess discharge-current
threshold
Detect rising edge of 'R
SENSE
' pin
voltage, V− = VRSENSE
V
DET3
x0.8
VDET3
V
DET3
x1.2
V
tVDET3
Output delay of excess
discharge-current
V
DD
= 3.0 V, V
RSENSE
= 0 V to 0.4
V, V− = VRSENSE
7.5 12 20.15 ms
tVREL3
Output delay of release from
excess discharge-current
V
DD
= 3.0 V, V- = 3 V to 0 V
V− = VRSENSE
0.65 1.2 2.067 ms
VSHORT
Short protection voltage
(R5480xxxxCG)
VDD = 3.0 V, VRSENSE = V− 0.40 0.50 0.60 V
Short protection voltage
(R5480xxxxCL) VDD = 3.0 V, VRSENSE = V− 0.130 0.18 0.230 V
Short protection voltage
(R5480xxxxUM)
VDD = 3.0 V, VRSENSE = V− 0.085 0.14 0.195 V
tSHORT
Output Delay of Short
protection
V
DD
= 3.0 V, V
RSENSE
= 0 V to 3 V,
V− = VRSENSE
160 250 506.7 µs
RSHORT
Reset resistance for excess
discharge-current protection
VDD = 3.6 V, V− = 1.0 V 17.3 45 77.6 kΩ
VDET4
Excess charge-current
threshold
Detect falling edge of 'R
SENSE
' pin
voltage, V− = VRSENSE
V
DET4
x1.17
VDET4
V
DET4
x0.83
V
tVDET4
Output delay of excess
charge-current
V
DD
= 3.0 V , V
RSENSE
= 0 V to −0.3
V, V− = VRSENSE
10.38 16 26.57 ms
tVREL4
Output delay of release from
excess charge-current
V
DD
= 3.0 V, V− = −1 V to 0 V
V− = VRSENSE
0.65 1.2 2.068 ms
VDS
Delay Time Shortening Mode
Voltage
VDD = 3.6 V −2.7 −2.0 −1.2 V
V
OL1
Nch ON-Voltage of C
OUT
I
OL
= 50 µA, V
DD
= 4.5 V
0.4
0.552
V
V
OH1
Pch ON-V olt age of COUT
I
OH
= −50 µA, V
DD
= 3.9 V
3.318
3.7
V
V
OL2
Nch ON-Voltage of D
OUT
I
OL
= 50 µA, V
DD
= 2.0 V
0.2
0.515
V
V
OH2
Pch ON-V olt age of DOUT
I
OH
= −50 µA, V
DD
= 3.9 V
3.389
3.7
V
I
DD
Supply Current
V
DD
= 3.9 V, V− =0 V
4.0
9.25
µA
I
STANDBY
Standby Current
V
DD
= 2.0 V
0.12
µA
All of these specifications are guaranteed by design, not tested in mass production.
R5480x
NO.EA-308-170516
9
APPLICATION INFORMATION
Typi ca l Application Circuit
VDD
V-
COUT
DOUT
VSS
0.1µF
1kΩ
330Ω
R5480
R1
C1
R2
RSENSE
R3
10mΩ
R1 and C1 stabilize a supply voltage to the R5480. A r ecomm ended R1 v alu e is equal or l es s than 1kΩ.
A l ar ge va lue of R1 mak es detection vo lta ge s hif t higher becaus e of the c on duc ti on c urr ent f lo wed in the
R5480x. Further, to stabilize the operation of R5480x, use the C1 with the value of 0.01µF or more.
R1 and R2 can operate also as parts for current limit circuit against reverse charge or applying a charger
with excess charging voltage to the R5480x, battery pack. While small value of R1 and R2 may cause
over power dissipation rating of the R5480x, therefore a total of “R1+R2” should be 1kΩ or more. Besides,
if a lar g e value of R2 is s et , releas e f r om over-d is char g e by conn ec ting a char ger might not b e pos s ib le.
Recommended R2 value is equal or less than 10kΩ.
R3 is a r esistor for sensing an excess curr ent. If the r esistance valu e is too lar ge, power loss becom es
also large . B y the ex cess curr ent, if the R3 is not appropr iate, t he po wer l oss m ay be b eyond the po wer
dissipation of R3. Choose an appropriate R3 according to the cell specification.
The typical application circuit diagram is just an example. This circuit performance largely depends on the
PCB layout and external components. In the actual application, fully evaluation is necessary.
R5480x
NO.EA-308-170516
10
Over-voltage and the over current beyond the absolute maximum rating should not be forced to the
protection IC and external components. Although the short protection circuit is built in the IC, if the positive
terminal and the negative terminal of the battery pack are short, during the delay time of short limit detector ,
large current flows through the FET. Select an appropriate FET with large enough current capacity to
prevent the IC from burning damage.
We are making our continuous effort to improve the quality and reliability of our products, but
semic onductor pr oducts ar e l ik el y to f ai l with c ertai n p r obab il it y. In or der to pr e ve nt a n y injury to h umans
or damages to prop erty resulting f rom such failure, users should be careful enough to incorporate safe
measures in design, such as redundancy, fire-containment, and fail-safe feature. We do not assume any
liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products.
If the positive terminal and the negative terminal of the battery pack are short, even though the short
protection circuit is built in the IC, during the delay time until detecting the short circuit, a large current
may flow through the FET. Select an FET with large enough current capacity in order to endure the large
current during the delay time.
R5480x
NO.EA-308-170516
11
Sense Resistance and On-resistance of the MOSFET Selection Guideline
Short mode is detected b y the current base or t he relation between VDD at shor t and total on-resistance of
external MOSFETs for COUT and DOUT.
If short must be detected by the current base determ ined by VSHORT and R3, the next form ula must be true,
otherwise, the short current limit becomes (VDD - 0.9)/(R3 + RSS (on))
VDD − 0.9
R3 + RSS (on)≥VSHORT
R3
VSHORT = 0.5 V (R5480xxxxCG), 0.18 V (R5480xxxxCL), 0.14 V (R5480xxxxUM)
R3 = External current sense resistance (Ω)
RSS (on) = external MO SF E Ts’ total on-resistance (Ω)
VDD = VDD level at short mode. If VDD goes down by the short current, the lowest level is VDD.
Ex. 1
As the RSENSE, in case that the 10 mΩ is selected as R3 and if the VDD becomes 3.0 V, to detect short at 50 A
with VSHORT = 0.5 V, the RSS (on) must be 32 mΩ or lower.
Ex. 2
As the RSENSE, in case the 20 mΩ is selected as R3 a nd if the VDD bec omes 3.0 V, to detec t short at 25 A with
VSHORT = 0.5 V, the RSS (on) must be 64 mΩ or lower.
If the RSS (on) value is higher than the value calculated by this formula, the short current limit will be less than
the desired value.
PACKAGE DIMENSIONS DFN(PLP)1414-6
Ver. A
i
DFN(PLP)1414-6 Package Dimensions
*
∗ The tab on the bottom of the package shown by blue circle is No Connection.
∗
PACKAGE DIMENSIONS
DFN1814-6C
Ver. A
i
DFN1814-6C Package Dimensions (Unit: mm)
Ricoh is committed to reducing the environmental loading materials in electrical devices
with a view to contributing to the protection of human health and the environment.
Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since
April 1, 2012.
Halogen Free
https://www.e-devices.ricoh.co.jp/en/
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arelikelytofailwithcertainprobability.Inordertopreventanyinjurytopersonsordamagestopropertyresultingfrom
suchfailure,customersshouldbecarefulenoughtoincorporatesafetymeasuresintheirdesign,suchasredundancy
feature,firecontainmentfeatureandfail-safefeature.Wedonotassumeanyliability
orresponsibilityforanylossor
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