2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6716 Collector-Base Voltage VCBO 60 2N6717 80 2N6718 100 UNIT V Collector-Emitter Voltage VCEO 60 80 100 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb= 25C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -55 to +200 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL 2N6716 2N6717 2N6718 UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 60 80 100 V IC=0.1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 60 80 100 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 5 V IE=1mA, IC=0 Collector Cut-Off Current ICBO 1 1 A A A VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 Emitter Cut-Off Current IEBO 1 1 1 A VEB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 0.35 0.5 0.35 0.5 0.35 V IC=250mA, IB=10mA* IC=250mA,IB=25mA* Base-Emitter Turn-On Voltage VBE(on) 1.2 1.2 1.2 V IC=250mA, VCE=1V* Static Forward Current Transfer Ratio hFE 80 50 20 250 80 50 20 250 80 50 20 250 Transition Frequency fT 50 500 50 500 50 500 MHz IC=50mA, VCE=10V Collector Base Capacitance CCB 30 pF MIN. MAX MIN. MAX MIN. MAX 1 30 30 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-6 IC=50mA, VCE=1V* IC=250mA, VCE=1V* IC=500mA, VCE=1V* VCE=10V, f=1MHz