1N5374BTR - MICRO COMMERCIAL COMPONENTS

November, 2013 − Rev. 15

1Publication Order Number:

1N5333B/D

1N53 Series

5 Watt Surmetict

40 Zener Voltage Regulators

This is a complete series of 5 Watt Zener diodes with tight limits and

better operating characteristics that reflect the superior capabilities of

silicon−oxide passivated junctions. All this in an axial lead,

transfer−molded plastic package that offers protection in all common

environmental conditions.

Features

•Zener Voltage Range − 3.3 V to 200 V

•ESD Rating of Class 3 (>16 kV) per Human Body Model

•Surge Rating of up to 180 W @ 8.3 ms

•Maximum Limits Guaranteed on up to Six Electrical Parameters

•Pb−Free Packages are Available*

Mechanical Characteristics

CASE: Void free, transfer−molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

260°C, 1/16 in. from the case for 10 seconds

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

MAXIMUM RATINGS

Rating Symbol Value Unit

Max. Steady State Power Dissipation

@ TL = 25°C, Lead Length = 3/8 in

Derate above 25°C

Junction−to−Lead Thermal Resistance

qJL

mW/°C

°C/W

Operating and Storage

Temperature Range

TJ, Tstg −65 to +200

(Note 1)

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Max operating temperature for DC conditions is 150°C, but not to exceed

200°C for pulsed conditions with low duty cycle or non−repetitive.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

AXIAL LEAD

CASE 017AA

PLASTIC

Cathode Anode

MARKING DIAGRAM

A = Assembly Location

1N53xxB = Device Number

(Refer to Tables on Pages 3 & 4)

YY = Year

WW = Work Week

G=Pb−Free Package

53xxB

YYWWG

Device Package Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1N53xxB, G Axial Lead

(Pb−Free)

1000 Units/Box

1N53xxBRL, G Axial Lead

(Pb−Free)

4000/Tape & Reel

(Note: Microdot may be in either location)

Zener Voltage Regulator

IZT

1N53 Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless

otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

ZZT Maximum Zener Impedance @ IZT

IZK Reverse Current

ZZK Maximum Zener Impedance @ IZK

IRReverse Leakage Current @ VR

VRBreakdown Voltage

IFForward Current

VFForward Voltage @ IF

IRMaximum Surge Current @ TA = 25°C

DVZReverse Zener Voltage Change

IZM Maximum DC Zener Current

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)

Device†

(Note 2)

Device

Marking

Zener Voltage (Note 3) Zener Impedance (Note 3)

Leakage

Current IR

(Note 4)

DVZ

(Note 5)

IZM

(Note 6)

VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR

Min Nom Max mA W W mA mA Max Volts A Volts mA

1N5333B 1N5333B 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440

1N5334B 1N5334B 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320

1N5335B 1N5335B 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220

1N5336B 1N5336B 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100

1N5337B 1N5337B 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010

1N5338B 1N5338B 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930

1N5339B 1N5339B 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865

1N5340B 1N5340B 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790

1N5341B 1N5341B 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765

1N5342B 1N5342B 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700

1N5343B 1N5343B 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630

1N5344B 1N5344B 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580

1N5345B 1N5345B 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545

1N5346B 1N5346B 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520

1N5347B 1N5347B 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

2. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.

3. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied

40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode

(TA = 25°C +8°C, −2°C).

4. SURGE CURRENT (IR): Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width,

PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between

1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in

Figure 6. Mounting contact located as specified in Note 2 (TA = 25°C +8°C, −2°C).

5. VOLTAGE REGULATION (DVZ): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%

of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting

contact located as specified in Note 2 (TA = 25°C +8°C, −2°C).

6. MAXIMUM REGULATOR CURRENT (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,

it applies only to the B−suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device.

TL = 25°C at 3/8″ maximum from the device body.

†The “G’’ suffix indicates Pb−Free package or Pb−Free packages are available.

1N53 Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)

Device†

(Note 7)

Device

Marking

Zener Voltage (Note 8) Zener Impedance (Note 8)

Leakage

Current IR

(Note 9)

DVZ

(Note

10)

IZM

(Note 11)

VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR

Min Nom Max mA W W mA mA Max Volts A Volts mA

1N5348B 1N5348B 10.45 11 11.55 125 2.5 125 1 5 8.4 8.0 0.25 430

1N5349B 1N5349B 11.4 12 12.6 100 2.5 125 1 2 9.1 7.5 0.25 395

1N5350B 1N5350B 12.35 13 13.65 100 2.5 100 1 1 9.9 7.0 0.25 365

1N5351B 1N5351B 13.3 14 14.7 100 2.5 75 1 1 10.6 6.7 0.25 340

1N5352B 1N5352B 14.25 15 15.75 75 2.5 75 1 1 11.5 6.3 0.25 315

1N5353B 1N5353B 15.2 16 16.8 75 2.5 75 1 1 12.2 6.0 0.3 295

1N5354B 1N5354B 16.15 17 17.85 70 2.5 75 1 0.5 12.9 5.8 0.35 280

1N5355B 1N5355B 17.1 18 18.9 65 2.5 75 1 0.5 13.7 5.5 0.4 264

1N5356B 1N5356B 18.05 19 19.95 65 3 75 1 0.5 14.4 5.3 0.4 250

1N5357B 1N5357B 19 20 21 65 3 75 1 0.5 15.2 5.1 0.4 237

1N5358B 1N5358B 20.9 22 23.1 50 3.5 75 1 0.5 16.7 4.7 0.45 216

1N5359B 1N5359B 22.8 24 25.2 50 3.5 100 1 0.5 18.2 4.4 0.55 198

1N5360B 1N5360B 23.75 25 26.25 50 4 110 1 0.5 19 4.3 0.55 190

1N5361B 1N5361B 25.65 27 28.35 50 5 120 1 0.5 20.6 4.1 0.6 176

1N5362B 1N5362B 26.6 28 29.4 50 6 130 1 0.5 21.2 3.9 0.6 170

1N5363B 1N5363B 28.5 30 31.5 40 8 140 1 0.5 22.8 3.7 0.6 158

1N5364B 1N5364B 31.35 33 34.65 40 10 150 1 0.5 25.1 3.5 0.6 144

1N5365B 1N5365B 34.2 36 37.8 30 11 160 1 0.5 27.4 3.5 0.65 132

1N5366B 1N5366B 37.05 39 40.95 30 14 170 1 0.5 29.7 3.1 0.65 122

1N5367B 1N5367B 40.85 43 45.15 30 20 190 1 0.5 32.7 2.8 0.7 110

1N5368B 1N5368B 44.65 47 49.35 25 25 210 1 0.5 35.8 2.7 0.8 100

1N5369B 1N5369B 48.45 51 53.55 25 27 230 1 0.5 38.8 2.5 0.9 93

1N5370B 1N5370B 53.2 56 58.8 20 35 280 1 0.5 42.6 2.3 1.0 86

1N5371B 1N5371B 57 60 63 20 40 350 1 0.5 45.5 2.2 1.2 79

1N5372B 1N5372B 58.9 62 65.1 20 42 400 1 0.5 47.1 2.1 1.35 76

1N5373B 1N5373B 64.6 68 71.4 20 44 500 1 0.5 51.7 2.0 1.52 70

1N5374B 1N5374B 71.25 75 78.75 20 45 620 1 0.5 56 1.9 1.6 63

1N5375B 1N5375B 77.9 82 86.1 15 65 720 1 0.5 62.2 1.8 1.8 58

1N5377B 1N5377B 86.45 91 95.55 15 75 760 1 0.5 69.2 1.6 2.2 52.5

1N5378B 1N5378B 95 100 105 12 90 800 1 0.5 76 1.5 2.5 47.5

1N5380B 1N5380B 114 120 126 10 170 1150 1 0.5 91.2 1.3 2.5 39.5

1N5381B 1N5381B 123.5 130 136.5 10 190 1250 1 0.5 98.8 1.2 2.5 36.6

1N5383B 1N5383B 142.5 150 157.5 8 330 1500 1 0.5 114 1.1 3.0 31.6

1N5384B 1N5384B 152 160 168 8 350 1650 1 0.5 122 1.1 3.0 29.4

1N5386B 1N5386B 171 180 189 5 430 1750 1 0.5 137 1.0 4.0 26.4

1N5387B 1N5387B 180.5 190 199.5 5 450 1850 1 0.5 144 0.9 5.0 25

1N5388B 1N5388B 190 200 210 5 480 1850 1 0.5 152 0.9 5.0 23.6

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

7. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.

8. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied

40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode

(TA = 25°C +8°C, −2°C).

9. SURGE CURRENT (IR): Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width,

PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between

1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in

Figure 6. Mounting contact located as specified in Note 7 (TA = 25°C +8°C, −2°C).

10.VOLTAGE REGULATION (DVZ): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%

of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting

contact located as specified in Note 7 (TA = 25°C +8°C, −2°C).

11. MAXIMUM REGULATOR CURRENT (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,

it applies only to the B−suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device.

TL = 25°C at 3/8″ maximum from the device body.

†The “G’’ suffix indicates Pb−Free package or Pb−Free packages are available.

1N53 Series

http://onsemi.com

Figure 1. Typical Thermal Resistance

00 0.2 0.4 0.6 0.8 1

EQUAL CONDUCTION

THROUGH EACH LEAD

L L

L, LEAD LENGTH TO HEATSINK (INCH)

, JUNCTION‐TO‐LEAD THERMAL RESISTANCE (

θ°C/W)

TEMPERATURE COEFFICIENTS

Figure 2. Temperature Coefficient-Range for Units 3 to 10 Volts

Figure 3. Temperature Coefficient-Range for Units 10 to 220 Volts

VZ, ZENER VOLTAGE @ IZT (VOLTS)

-2

34 5678910

RANGE

300

200

100

0 20 40 60 80 100 120 140 160 180 200 220

VZ, ZENER VOLTAGE @ IZT (VOLTS)

θVZ, TEMPERATURE COEFFICIENT

(mV/°C) @ I ZT

θVZ, TEMPERATURE COEFFICIENT

(mV/°C) @ I ZT

RANGE

1N53 Series

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0.5

Figure 4. Typical Thermal Response

L, Lead Length = 3/8 Inch

Figure 5. Maximum Non-Repetitive Surge Current

versus Nominal Zener Voltage

(See Note 4)

θJL (t, D), TRANSIENT THERMAL RESISTANCE

JUNCTION‐TO‐LEAD (°C/W)

0.01

0.0000001

DUTY CYCLE, D = t1/t2

SINGLE PULSE D TJL = qJL(t)PPK

REPETITIVE PULSES D TJL = qJL(t,D)PPK

qJL(t,D) = D * qJL (∞)+(1−D) * qJL(t)

[where qJL(t) is D = 0 curve]

PPK t1

t, TIME (SECONDS)

Ir, PEAK SURGE CURRENT (AMPS)

0.1

0.2

0.4

34 6810 20 30 40 60 80 100 200

*SQUARE WAVE PW=100ms*

PW=1000ms*

PW=1ms*

PW=8.3ms*

NOMINAL VZ (V)

0.1

0.2

0.5

1 10 100 1000

1000

100

0.1

1 234 5678 910

IZ, ZENER CURRENT (mA)

PW, PULSE WIDTH (ms)

VZ, ZENER VOLTAGE (VOLTS)

Figure 6. Peak Surge Current versus Pulse Width

(See Note 4)

Figure 7. Zener Voltage versus Zener Current

VZ= 3.3 thru 10 Volts

VZ=200V

VZ=3.3V

PLOTTED FROM INFORMATION

GIVEN IN FIGURE 5

TC=25°C

T=25°C

Ir, PEAK SURGE CURRENT (AMPS)

IZ, ZENER CURRENT (mA)

VZ, ZENER VOLTAGE (VOLTS)

1000

100

0.1

10 20 30 40 50 60 70 80

T=25°C

Figure 8. Zener Voltage versus Zener Current

VZ = 11 thru 75 Volts

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100

0.1

100

D = 0

0.2

0.1

0.05

0.02

0.01

1N53 Series

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100

0.1

80 100 120 140 160 180 200 220

VZ, ZENER VOLTAGE (VOLTS)

IZ, ZENER CURRENT (mA)

Figure 9. Zener Voltage versus Zener Current

VZ = 82 thru 200 Volts

APPLICATION NOTE

Since the actual voltage available from a given Zener

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

Lead Temperature, TL, should be determined from:

TL = qLA PD + TA

qLA is the lead-to-ambient thermal resistance and PD is the

power dissipation.

Junction Temperature, TJ, may be found from:

TJ = TL + DTJL

DTJL is the increase in junction temperature above the lead

temperature and may be found from Figure 4 for a train of

power pulses or from Figure 1 for dc power.

DTJL = qJL PD

For worst-case design, using expected limits of IZ, limits

of PD and the extremes of TJ (DTJ) may be estimated.

Changes in voltage, VZ, can then be found from:

DV = qVZ DTJ

qVZ, the Zener voltage temperature coefficient, is found

from Figures 2 and 3.

Under high power-pulse operation, the Zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

Data of Figure 4 should not be used to compute surge

capability. Surge limitations are given in Figure 5. They are

lower than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots resulting in device

degradation should the limits of Figure 5 be exceeded.

1N53 Series

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PACKAGE DIMENSIONS

SURMETIC 40, AXIAL LEAD

CASE 017AA

ISSUE O

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.330 0.350 8.38 8.89

B0.130 0.145 3.30 3.68

D0.037 0.043 0.94 1.09

F--- 0.050 --- 1.27

K1.000 1.250 25.40 31.75

NOTES:

1. CONTROLLING DIMENSION: INCH

2. LEAD DIAMETER AND FINISH NOT CONTROLLED

WITHIN DIMENSION F.

3. CATHODE BAND INDICATES POLARITY

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

1N5333B/D

SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC).

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