PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET(R) Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS 60V RDS(on) typ. max. G S ID Description 9.6m 12m 57A D Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G D S D2Pak AUIRFZ44VZS Absolute Maximum Ratings G D S Gate Drain Source Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds c h g d Units 57 40 230 92 0.61 20 73 110 See Fig.12a, 12b, 15, 16 A W W/C V mJ A mJ -55 to + 175 C 300 (1.6mm from case ) Thermal Resistance Parameter RJC Junction-to-Case RJA Junction-to-Ambient (PCB Mount) i Typ. Max. Units --- 1.64 C/W --- 40 HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 02/07/11 AUIRFZ44VZS Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 60 --- --- 2.0 25 --- --- --- --- --- 0.061 9.6 --- --- --- --- --- --- --- --- 12 4.0 --- 20 250 200 -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 34A V VDS = VGS, ID = 250A V VDS = 25V, ID = 34A A VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. Typ. Max. Units --- --- --- --- --- --- --- --- 43 11 18 14 62 35 38 4.5 65 --- --- --- --- --- --- --- nC ns nH Conditions ID = 34A VDS = 48V VGS = 10V VDD = 30V ID = 34A RG = 12 VGS = 10V Between lead, e e D LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 1690 270 130 1870 260 510 --- --- --- --- --- --- S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 48V, = 1.0MHz VGS = 0V, VDS = 0V to 48V pF G f Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 57 ISM (Body Diode) Pulsed Source Current --- --- 230 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 23 17 1.3 35 26 c Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25C, IS = 34A, VGS = 0V TJ = 25C, IF = 34A, VDD = 30V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes through are on page 3 2 www.irf.com AUIRFZ44VZS Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 2 MSL1 D PAK Class M4(+/- 425V ) (per AEC-Q101-002) Class H1B(+/- 1000V ) (per AEC-Q101-001) Class C5(+/- 1125V ) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifier's web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage Notes: Repetitive rating; pulse width limited by Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.12mH This value determined from sample failure population. 100% RG = 25, IAS = 34A, VGS =10V. Part not tested to this value in production, starting TJ = 25C, L = 0.12mH recommended for use above this value. RG = 25, IAS = 34A, VGS =10V. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . www.irf.com 3 AUIRFZ44VZS 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 4.5V 60s PULSE WIDTH Tj = 25C 1 10 BOTTOM 10 4.5V 60s PULSE WIDTH Tj = 175C 1 1 0.1 100 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 60 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current () 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 100 T J = 175C 10 TJ = 25C VDS = 25V 60s PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 9.0 T J = 175C 50 40 TJ = 25C 30 20 10 VDS = 15V 380s PULSE WIDTH 0 0 10 20 30 40 50 60 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com AUIRFZ44VZS 3000 20 2500 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C, Capacitance (pF) C oss = C ds + C gd 2000 Ciss 1500 1000 500 Coss Crss VDS= 48V VDS= 30V VDS= 12V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 ID= 34A 10 0 100 20 30 40 50 60 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000.0 ISD, Reverse Drain Current (A) 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100.0 TJ = 175C 10.0 T J = 25C 1.0 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.1 0.1 0.2 0.6 1.0 1.4 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1.8 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFZ44VZS 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 60 ID , Drain Current (A) 50 40 30 20 10 0 ID = 34A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 T J , Junction Temperature (C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 C 2 1 2 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Ri (C/W) i (sec) 0.960 0.00044 0.680 0.00585 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFZ44VZS 300 DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS tp EAS, Single Pulse Avalanche Energy (mJ) 15V A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp ID 3.8A 5.0A BOTTOM 34A TOP 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K VCC VGS(th) Gate threshold Voltage (V) 10 V ID = 250A 3.0 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 13b. Gate Charge Test Circuit www.irf.com Fig 14. Threshold Voltage Vs. Temperature 7 AUIRFZ44VZS 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 80 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 34A 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature 8 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRFZ44VZS D.U.T Driver Gate Drive + - - P.W. Period * D.U.T. ISD Waveform Reverse Recovery Current + * dv/dt controlled by R G * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRFZ44VZS D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUFZ44VZS YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFZ44VZS D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. www.irf.com 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 11 AUIRFZ44VZS Ordering Information Base part Package Type AUIRFZ44VZS D2Pak 12 Standard Pack Form Tube Tape and Reel Left Tape and Reel Right Quantity 50 800 800 Complete Part Number AUIRFZ44VZS AUIRF44VZSTRL AUIRFZ44VZSTRR www.irf.com AUIRFZ44VZS IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13