©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC337/338
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC337
: BC338 50
30 V
V
VCEO Collector-Emitter Voltage
: BC337
: BC338 45
25 V
V
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 800 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Param e ter Test Condit ion Min. Typ. Max. Units
BVCEO Collect or-E mitter Break down Voltage
: BC337
: BC338
IC=10mA, IB=0 45
25 V
V
BVCES Collect or-E mitter Break down Voltage
: BC337
: BC338
IC=0.1mA, VBE=0 50
30 V
V
BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 5 V
ICES Collector Cut-off Current
: BC337
: BC338 VCE=45V, IB=0
VCE=25V, IB=0 2
2100
100 nA
nA
hFE1
hFE2
DC Current Gain
VCE=1V, IC=100mA
VCE=1V, IC=300mA 100
60 630
VCE (sat) Collector-Emitter Saturat ion Voltage IC=500mA, IB=50mA 0.7 V
VBE (on) Base Emitter On Voltage VCE=1V, IC=300mA 1.2 V
fTCurrent Gain Bandwidth Product VCE=5V, IC=10mA, f=50MHz 100 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 12 pF
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60- 100- 170-
BC337/338
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC327/BC328
1. Collector 2. Base 3. Emitter
TO-92
1
Package Dimensions
BC337/338
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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