RB751V-40
Page 1
QW-BB029
REV:A
A
mA
V
V
0.2
30
30
40
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
°C
°C
+125
+125
-40TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter Conditions Symbol Min Typ
Max
Unit
uA
V
0.5
0.37
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 30 V
IF = 1 mA
Features
-Low current rectifier.
-Low voltage, low inductance.
-For power supply.
Mechanical data
-Case: SOD-323 Standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750D, method 2026.
-Mounting position: Any.
Comchip Technology CO., LTD.
Dimensions in inches and (millimeter)
SOD-323
0.071 1.80
0.063(1.60)
( )
0.006 0.15( )Max.
0.039
0)
(1.00)Max.
0.106 2.70
0.098(2.50)
( )
0.055 1.40
0.047(1.20)
( )
0.019 0.475( )REF
0.014 0.35
0.010(0.25)
( )
0.004
0)
(0.10)Max.
pF
2
CT
Junction capacitance VR = 1V,f=1MHz
SMD Schottky Barrier Diodes
Io = 30 mA
VR = 30 Volts
RoHS Device
Maximum Ratings (at TA=25°C unless otherwise noted)
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
RATING AND CHARACTERISTIC CURVES (RB751V-40)
Page 2
REV:A
Capacitance between terminals (PF)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
0 4 8
1.0
10.0
100.0
10 14
f = 1 MHz
Ta = 25°C
Comchip Technology CO., LTD.
Fig. 1 - Forward Characteristics
IF, Forward Current (A)
VF, Forward Voltage (V)
0.0 0.8
1m
1000m
10u
0.2 0.4 0.6 1.0
1μ
100u
10m
TA=125°C
TA=75°C
TA=25°C
TA=-25°C
Reverse current ( A )
Reverse voltage (V)
100n
1u
10n
0 10 20 25 30
Fig. 2 - Reverse characteristics
100u
10u
15
5
1n
35 40
QW-BB029
26 12
125°C
75°C
25°C
-25°C
100m
Typ.
pulse measurement
SMD Schottky Barrier Diodes
Page 3
REV:A
Comchip Technology CO., LTD.
B C dD D2D1
SOD-323
SYMBOL
A
(mm)
(inch) 2.142 MIN.
1.52 ± 0.10 2.90 ± 0.10
4.00 ± 0.10
1.50 ± 0.10
3.50 ± 0.051.75 ± 0.10
54.4 MIN. 13.0 ± 0.20
1.35 ± 0.10
4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 9.5 MAX.
178 ± 1
0.114 ± 0.0040.060± 0.004 0.053 ± 0.004 0.059 ± 0.004 7.008 ± 0.040 0.512 ± 0.008
SOD-323
SYMBOL
(mm)
(inch) 0.315 0.012±
0.138 ± 0.0020.069 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.374 MAX
E F P P0P1WW1
QW-BB029
SMD Schottky Barrier Diodes
Reel Taping Specification
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
T
C
Direction of Feed
Index hole
d
E
F
B W
P
P0
P1
A
D1
D2
D
W1
Page 4
REV:A
Part Number
RB751V-40
Marking Code
5
Marking Code
Suggested PAD Layout
SIZE
(inch)
0.092
(mm)
2.33
0.70
0.70
0.028
0.028
SOD-323
3.03 0.119
E1.63 0.064
A
B
C
D
Comchip Technology CO., LTD.
5
QW-BB029
SMD Schottky Barrier Diodes
A
B
C
E
D
SOD-323
Standard Packaging
Case Type
3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
