MMBT4124LT1 General Purpose Transistor NPN Silicon Features * Pb-Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 200 mAdc Symbol Max Unit 225 1.8 W mW/C 556 C/W 300 2.4 W mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 3 PD RJA 1 2 PD SOT-23 (TO-236) CASE 318 STYLE 6 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MARKING DIAGRAM ZC M G G ZC = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT4124LT1 MMBT4124LT1G (c) Semiconductor Components Industries, LLC, 2006 January, 2006 - Rev. 1 1 Package Shipping SOT-23 3000 / Tape & Reel SOT-23 (Pb-Free) 3000 / Tape & Reel Publication Order Number: MMBT4124LT1/D MMBT4124LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IE = 0) V(BR)CEO 25 - Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 30 - Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 - Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO - 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO - 50 nAdc 120 60 360 - OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) hFE - Collector-Emitter Saturation Voltage (Note 3) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) - 0.3 Vdc Base-Emitter Saturation Voltage (Note 3) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - 0.95 Vdc fT 300 - MHz Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo - 8.0 pF Collector-Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Ccb - 4.0 pF Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k , f = 1.0 kHz) hfe 120 480 - Current Gain - High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) |hfe| 3.0 120 - 480 Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) NF - 5.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) - dB 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 200 10 100 5.0 TIME (ns) CAPACITANCE (pF) 7.0 Cibo 3.0 ts 70 50 td 30 tf tr 20 Cobo 2.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 10.0 7.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 5.0 20 30 40 1.0 Figure 1. Capacitance 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 2. Switching Times http://onsemi.com 2 200 MMBT4124LT1 AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 25C) Bandwidth = 1.0 Hz 12 f = 1 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) IC = 1 mA 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 IC = 1 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 20 40 0 0.1 100 0.2 0.4 Figure 3. Frequency Variations 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k) 40 100 5.0 10 5.0 10 Figure 4. Source Resistance h PARAMETERS (VCE = 10 V, f = 1 kHz, TA = 25C) 100 hoe , OUTPUT ADMITTANCE ( mhos) hfe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 5. Current Gain Figure 6. Output Admittance h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) hie , INPUT IMPEDANCE (k ) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 7. Input Impedance 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 8. Voltage Feedback Ratio http://onsemi.com 3 MMBT4124LT1 h FE , DC CURRENT GAIN (NORMALIZED) STATIC CHARACTERISTICS 2.0 TJ = +125C 1.0 VCE = 1 V +25C 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1 mA 30 mA 10 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Collector Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) 1.2 TJ = 25C VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 5.0 10 20 50 100 1.0 0.5 VC for VCE(sat) 0 -55C to +25C -0.5 -55C to +25C -1.0 +25C to +125C VB for VBE(sat) -1.5 -2.0 200 +25C to +125C 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltages Figure 12. Temperature Coefficients http://onsemi.com 4 180 200 MMBT4124LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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