2N5320 Silicon NPN Transistor High Current, General Purpose TO-39 Type Package Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 75 - - V VCE = 100V, VBE = 1.5V - - 0.1 mA VCE = 70V, VBE = 1.5V, TC = +150C - - 5.0 mA IEBO VBE = 7V, IC = 0 - - 0.1 mA hFE IC = 500mA, VCE = 4V 30 - 130 IC = 1A, VCE = 2V 10 - - OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO) IC = 100mA, IB = 0 ICEX ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA - - 0.5 V Base-Emitter ON Voltage VBE(on) IC = 500mA, VCE = 4V - - 1.1 V hfe IC = 50mA, VCE = 4V, f = 10MHz 5 - - Turn-On Time ton VCC = 30V, IC = 500mA, IB1 = 50mA - - 80 ns Turn-Off Time toff VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA - - 800 ns Small-Signal Characteristics Small-Signal Current Gain Switching Characteristics Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)