2N5320
Silicon NPN Transistor
High Current, General Purpose
TO−39 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 75V......................................................
Collector−Base Voltage, VCBO 100V......................................................
Emitter−Base Voltage, VEBO 7V..........................................................
Continuous Collector Current, IC2A......................................................
Base Current, IB1A....................................................................
Total Device Dissipation (TC = +25C), PD10W............................................
Derate Above 25C 0.057mW/C...................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 17.5C/W....................................
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO) IC = 100mA, IB = 0 75 − − V
Collector Cutoff Current ICEX VCE = 100V, VBE = 1.5V − − 0.1 mA
VCE = 70V, VBE = 1.5V, TC = +150C− − 5.0 mA
Emitter Cutoff Current IEBO VBE = 7V, IC = 0 − − 0.1 mA
ON Characteristics (Note 1)
DC Current Gain hFE IC = 500mA, VCE = 4V 30 −130
IC = 1A, VCE = 2V 10 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA − − 0.5 V
Base−Emitter ON Voltage VBE(on) IC = 500mA, VCE = 4V − − 1.1 V
Small−Signal Characteristics
Small−Signal Current Gain hfe IC = 50mA, VCE = 4V, f = 10MHz 5− −
Switching Characteristics
Turn−On Time ton VCC = 30V, IC = 500mA, IB1 = 50mA − − 80 ns
Turn−Off Time toff VCC = 30V, IC = 500mA,
IB1 = IB2 = 50mA
− − 800 ns
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
45
.031 (.793)
Emitter
Base
Collector/Case
.018 (0.45)
