SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
1 Feb-18-2002
NPN Silicon Darlington Transistors
High DC current gain
High collector current
Low collector-emitter saturation voltage
1
2
3
VPS05161
Type Marking Pin Configuration Package
SMBTA13/ MMBTA13
SMBTA14/ MMBTA14
s1M
s1N
1 = B
1 = B
2 = E
2 = E
3 = C
3 = C
SOT23
SOT23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCES 30 V
Collector-base voltage VCBO 30
Emitter-base voltage VEBO 10
DC collector current IC300 mA
Peak collector current ICM 500 mA
Base current 100
IB
Peak base current IBM 200
Total power dissipation, TS = 81 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
210 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
2 Feb-18-2002
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CES 30 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 30 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10 - -
Collector cutoff current
VCB = 30 V, IE = 0
ICBO - - 100 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO - - 10 µA
Emitter cutoff current
VEB = 10 V, IC = 0
IEBO - - 100 nA
DC current gain 1)
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
SMBTA13
SMBTA14
SMBTA13
SMBTA14
hFE
5000
10000
10000
20000
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1
)
IC = 100 mA, IB = 0.1 mA
VCEsat - - 1.5 V
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 0.1 mA
VBEsat - - 2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT125 - - MHz
1) Pulse test: t ≤ 300µs, D = 2%
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
3 Feb-18-2002
Collector-base capacitance CCB = f (VCBO
)
Emitter-base capacitance CEB = f (VEBO)
10
EHP00823SMBTA 13/14
-1 1
10
V
10
0
5
10
pF
0
EB0
C
CB0
C
)(
C
EB0
C
CB0
EB0CB0
V,
(
V
)
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00824SMBTA 13/14
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
P
DC
P
p
t
Transition frequency fT = f (IC)
VCE = 5V, f = 20MHz
10
EHP00825SMBTA 13/14
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Ι
55
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
4 Feb-18-2002
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 1000
0
10
EHP00827SMBTA 13/14
BEsat
V
3.0
0
3
10
Ι
C
mA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 1000
0
10
EHP00826SMBTA 13/14
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
DC current gain hFE = f (IC)
VCE = 5V
10
EHP00829SMBTA 13/14
-1 3
10mA
3
10
6
10
5
5
10
0
10
1
10
4
C
FE
h
Ι
2
10
5
10 ˚C
125
5
25
˚C
-55
˚C
Collector cutoff current ICBO = f (TA)
VCB = 30V
10
10
10
0 50 100 150
SMBTA 13/14 EHP00828
TA
Ι
CB0
˚C
10
10
4
3
2
1
0
5
5
5
max
typ
nA
