SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
1 Feb-18-2002
NPN Silicon Darlington Transistors
High DC current gain
High collector current
Low collector-emitter saturation voltage
1
2
3
VPS05161
Type Marking Pin Configuration Package
SMBTA13/ MMBTA13
SMBTA14/ MMBTA14
s1M
s1N
1 = B
1 = B
2 = E
2 = E
3 = C
3 = C
SOT23
SOT23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCES 30 V
Collector-base voltage VCBO 30
Emitter-base voltage VEBO 10
DC collector current IC300 mA
Peak collector current ICM 500 mA
Base current 100
IB
Peak base current IBM 200
Total power dissipation, TS = 81 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
210 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance