MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: VDD =50Volts,I
DQ = 100 mA
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
Pulse
(100 sec, 20% Duty Cycle)
1250 Peak 230 24.0 74.0
CW 1250 CW 230 22.9 74.6
Application Circuits (1) — Typical Performance
Frequency
(MHz) Signal Type
Pout
(W)
Gps
(dB)
D
(%)
27 CW 1300 27 81
40 CW 1300 26 85
81.36 CW 1250 27 84
87.5--108 CW 1100 24 80
144--148 CW 1250 26 78
170--230 DVB--T 225 25 30
352 Pulse
(200 sec,
20% Duty Cycle)
1250 21.5 66
352 CW 1150 20.5 68
500 CW 1000 18 58
1. Contact your local Freescale sales office for additional information on specific
circuit designs.
Load Mismatch/Ruggedness
Frequency
(MHz) Signal Type VSWR
Pout
(W)
Test
Voltage Result
230 Pulse
(100 sec, 20%
Duty Cycle)
> 65:1 at all
Phase Angles
1500 Peak
(3 dB
Overdrive)
50 No Device
Degradation
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: MRFE6VP61K25H
Rev. 4.1, 3/2014
Freescale Semiconductor
Technical Data
1.8--600 MHz, 1250 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
MRFE6VP61K25HR6
MRFE6VP61K25HR5
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
(Top View)
Drain A
31
Figure 1. Pin Connections
42
Drain B
Gate A
Gate B
NI--1230H--4S
MRFE6VP61K25HR6/R5
NI--1230S--4S
MRFE6VP61K25HSR5
Note: The backside of the package is the
source terminal for the transistors.
NI--1230GS--4L
MRFE6VP61K25GSR5
Freescale Semiconductor, Inc., 2010--2014. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +133 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1,2) TJ225 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD1333
6.67
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 63C, 1250 W CW, IDQ = 100 mA, 230 MHz
RJC 0.15 C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 66C, 1250 W Pulse, 100 sec Pulse Width, 20% Duty Cycle,
IDQ = 100 mA, 230 MHz
ZJC 0.03 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 3500 V
Machine Model (per EIA/JESD22--A115) B, passes 250 V
Charge Device Model (per JESD22--C101) IV, passes 4000 V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D= 100 mA)
V(BR)DSS 133 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 20 Adc
On Characteristics
Gate Threshold Voltage (4)
(VDS =10Vdc,I
D= 1776 Adc)
VGS(th) 1.7 2.2 2.7 Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
D= 100 mAdc, Measured in Functional Test)
VGS(Q) 1.9 2.2 2.9 Vdc
Drain--Source On--Voltage (4)
(VGS =10Vdc,I
D=2Adc)
VDS(on) —0.15 —Vdc
Forward Transconductance
(VDS =10Vdc,I
D=30Adc)
gfs —28.0 —S
Dynamic Characteristics (4)
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —2.8 —pF
Output Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —185 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —562 —pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately. (continued)
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 100 mA, Pout = 1250 W Peak (250 W Avg.),
f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain Gps 23.0 24.0 26.0 dB
Drain Efficiency D72.5 74.0 — %
Input Return Loss IRL — -- 1 4 -- 1 0 dB
Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz) Signal Type VSWR
Pout
(W) Test Voltage, VDD Result
230 Pulse
(100 sec, 20% Duty Cycle)
> 65:1 at all
Phase Angles
1500 Peak
(3 dB Overdrive)
50 No Device Degradation
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
4
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
Figure 2. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Component Layout — Pulse
-- --
----
CUT OUT AREA
C10 C11 C12
C13
R1
C1
C2
C3
C4 L1
C5
L2
R2
C9
C7 C8
C6
COAX2
COAX1
COAX4
COAX3
C14
C22 C23 C24
C21
L3
C15
C16
C17
C18
C19 C20
C26 C27 C28
L4
MRFE6VP61K25H
Rev. 3
C25
Table 6. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Component Designations and Values — Pulse
Part Description Part Number Manufacturer
C1 20 pF Chip Capacitor ATC100B200JT500XT ATC
C2, C3, C5 27 pF Chip Capacitors ATC100B270JT500XT ATC
C4 0.8--8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson
C6, C10 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet
C7, C11 0.1 F Chip Capacitors CDR33BX104AKYS AVX
C8, C12 220 nF Chip Capacitors C1812C224K5RACTU Kemet
C9, C13, C21, C25 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C14 43 pF Chip Capacitor ATC100B430JT500XT ATC
C15 75 pF Metal Mica MIN02--002EC750J--F CDE
C16, C17, C18, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC
C20 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC
C22, C23, C24, C26, C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
Coax1, 2, 3, 4 25 Semi Rigid Coax, 2.2Shield Length UT--141C--25 Micro--Coax
L1, L2 5 nH Inductors A02TKLC Coilcraft
L3, L4 6.6 nH Inductors GA3093--ALC Coilcraft
R1, R2 10 Chip Resistors CRCW120610R0JNEA Vishay
PCB 0.030,r=2.55 AD255A Arlon
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
5
RF Device Data
Freescale Semiconductor, Inc.
+
+
+
+
+
+
+
RF
INPUT Z1 Z2
Z3
C3
Z4
C1
COAX1
COAX2
Z5
C2
Z6
Z7
Z8
Z9
Z10
C4 C5
VBIAS
L1
L2
VBIAS
C10 C11 C12 C13
C6 C7 C8 C9
R1
R2
Z11
Z13
Z14
DUT
Z12
Z15
Z16
L3
Z19
Z17
Z21
Z22
Z18
Z20
Z23 Z25
Z24 Z26
C14 C15
L4
C21 C22 C23 C24
C25 C26 C27 C28
Z27
Z28
C16
C17
C18
C19 COAX4
COAX3
Z29 Z30
C20
RF
OUTPUT
VSUPPLY
VSUPPLY
Table 7. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Microstrips — Pulse
DescriptionMicrostripDescriptionMicrostripDescriptionMicrostrip
Z1 0.1920.082Microstrip
Z2 0.1750.082Microstrip
Z3, Z4 0.1700.100Microstrip
Z5, Z6 0.1160.285Microstrip
Z7, Z8 0.1160.285Microstrip
Z9, Z10 0.1080.285Microstrip
Figure 3. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Schematic — Pulse
Z11*, Z12* 0.8720.058Microstrip
Z13, Z14 0.4120.726Microstrip
Z15, Z16 0.3710.507Microstrip
Z17*, Z18* 0.4660.363Microstrip
Z19*, Z20* 0.1870.154Microstrip
Z21, Z22 0.1040.507Microstrip
Z23, Z24 1.2510.300Microstrip
Z25, Z26 0.1270.300Microstrip
Z27, Z28 0.1160.300Microstrip
Z29 0.1860.082Microstrip
Z30 0.1790.082Microstrip
* Line length includes microstrip bends
6
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
TYPICAL CHARACTERISTICS
50
10
2000
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
Ciss
1000
100
40
Coss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
Note: Each side of device measured separately.
159
66
35
Pin, INPUT POWER (dBm) PEAK
Figure 5. Output Power versus Input Power
64
36 37 38 39 40 41 42
Pout, OUTPUT POWER (dBm) PULSED
63
60
Actual
Ideal
VDD =50Vdc,I
DQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
P1dB = 61.3 dBm
(1333 W)
62
61
65 P3dB = 61.9 dBm (1553 W)
P2dB = 61.7 dBm (1472 W)
26
30
90
100
24 70
50
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
22
20
2000
21 40
60
80
23
25
16
23
0
20
19
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
Gps, POWER GAIN (dB)
200
18
1400 1600
17
400 800 1000 1200
VDD =30V
50 V
21
22
25
24
26
600
35 V
40 V 45 V
20
90
0
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Drain Efficiency versus Output Power
70
200 400 600 800 1000 1200 1400
60
30
50
40
80
1600
Figure 9. Power Gain and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) PEAK
Gps, POWER GAIN (dB)
19
21
20
100 2000
D
25_C
TC=--30_C
85_C
Gps
40
60
50
20
30
D,DRAIN EFFICIENCY (%)
-- 3 0 _C
25_C
85_C
VDD =30V
50 V
35 V 40 V 45 V
D, DRAIN EFFICIENCY (%)
24
23
22
26
25
70
80
90
Crss
1000
D
Gps
VDD =50Vdc,I
DQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
20001000
IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
VDD =50Vdc,I
DQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 10. MTTF versus Junction Temperature — CW
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50Vdc,P
out = 1250 W CW, and D= 74.6%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
108
105
VDD =50Vdc,I
DQ = 100 mA, Pout = 1250 W Peak
f
MHz
Zsource
Zload
230 1.29 + j3.54 2.12 + j2.68
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
Zsource Zload
Figure 11. Series Equivalent Test Circuit Source and Load Impedance — 230 MHz Pulse
50
50
8
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
VDD =50Vdc,I
DQ = 100 mA
f
(MHz)
Zsource
()
Zload
()
1.8 (1) 34.4 + j192.0 (1) 5.00 - j4.00 (1)
27 12.5 + j7.00 7.00 + j0.70
40 5.75 + j5.06 5.39 + j2.62
81.36 4.04 + j5.93 4.89 + j2.95
88 2.20 + j6.70 4.90 + j2.90
98 2.30 + j6.90 4.10 + j2.50
108 2.30 + j7.00 4.40 + j3.60
144 1.60 + j5.00 3.90 + j1.50
175 1.33 + j3.90 3.50 + j2.50
230 1.29 + j3.54 2.12 + j2.68
352 0.98 + j1.45 1.82 + j2.05
500 0.29 + j1.47 1.79 + j1.80
1. Simulated data.
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
Zsource Zload
50
50
Figure 12. Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--Pull
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
9
RF Device Data
Freescale Semiconductor, Inc.
87.5--108 MHz FM BROADCAST REFERENCE CIRCUIT
Fi
g
ure 13. MRFE6VP61K25HR6
(
HSR6
)
87.5--108 MHz FM Broadcast Reference Circuit Com
p
onent La
y
out
++
++
L2
L3
C3
R1
B1
C1
L1
C2
T1
COAX1
COAX2
C22 C23
C24
C21 C20
C19 C18
C15 C16
C17
L4
L5
C7
C8
C9
C10
C12
C11 C5
C4
COAX3
MRFE6VP61K25H Rev. 1
Note: Component numbers C6, C13 and
C14 are not used.
Q1
Table 8. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Designations
and Values
Part Description Part Number Manufacturer
B1 Long Ferrite Bead 2743021447 Fair--Rite
C1 6.8 F, 50 V Chip Capacitor C4532X7R1H685K TDK
C2 27 pF Chip Capacitor ATC100B270JT500XT ATC
C3, C7, C8, C9, C10,
C11, C12
1000 pF Chip Capacitors ATC100B102JT50XT ATC
C4 39 pF Mica Capacitor MIN02--002DC390J--F Cornell Dubilier
C5 3 pF Chip Capacitor ATC100B3R0CT500XT ATC
C15, C22 10K pF Chip Capacitors ATC200B103KT50XT ATC
C16, C23 1 F, 100 V Chip Capacitors C3225JB2A105KT TDK
C17, C24 10 F, 100 V Chip Capacitors C5750X7S2A106MT TDK
C18, C19, C20, C21 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
L1 39 nH Inductor 1812SMS--39NJLC Coilcraft
L2, L3 2.5 nH Inductors A01TKLC Coilcraft
L4, L5 7 Turn, #16 AWG, ID = 0.3Inductors Copper Wire
Q1 RF Power LDMOS Transistor MRFE6VP61K25HR6 Freescale
R1 11 , 1/4 W Chip Resistor CRCW120611R0FKEA Vishay
T1 Balun TUI--9 Comm Concepts
Coax1, Coax2 Flex Cables (12 )5.9TC--12 Comm Concepts
Coax3 Coax Cable, Quickform 50 ,8.7SUCOFORM 250--01 Huber+Suhner
PCB 0.030,r=3.5 TC--350 Arlon
Heatsink NI--1230 Copper Heatsink C193X280T970 Machine Shop
10
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF
INPUT
VGS
RF
OUTPUT
C1
B1
L1
R1
C3
C2
T1
L2
L3
B2
B3
C4
C15 C16 C17 C19 C18
C22 C23 C24 C21 C20
COAX1
COAX2
C7
C8
C9
C10
C11
C12
C5
COAX3
VDD
VDD
Figure 14. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Schematic
+
+
+
+
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 87.5--108 MHz FM BROADCAST REFERENCE CIRCUIT
30
20
90
40
28 70
50
Pout, OUTPUT POWER (WATTS)
Figure 15. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
26
23
2000
25 40
60
80
27
29
1000
D
Gps
VDD =50Vdc,I
DQ = 200 mA
24 30
100
108 MHz 98 MHz
87.5 MHz
108 MHz
98 MHz
87.5 MHz
VDD =50Vdc,I
DQ = 200 mA, Pout = 1100 W CW
f
MHz
Zsource
Zload
87.5 2.20 + j6.70 4.90 + j2.90
98 2.30 + j6.90 4.10 + j2.50
108 2.30 + j7.00 4.40 + j3.60
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 16. Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load Impedance
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
Zsource Zload
50 50
12
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
144--148 MHz REFERENCE CIRCUIT
Figure 17. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Component Layout
+
C1
COAX1
MRFE6VP61K25H Rev. 2
C3
R1
B1
L1
T1
C13
C14
COAX2
COAX3
C6
C5
C19C20
C7
C8
C9
C10
C11
C12
C4
C18
C15 C16 C17
L2
*C7, C8, C9, C10, C11, and C12 are mounted vertically.
Note: Component number C2 is not used.
Table 9. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 95 , 100 MHz Long Ferrite Bead 2743021447 Fair--Rite
C1 6.8 F, 50 V Chip Capacitor C4532X7R1H685K TDK
C3, C5, C7, C8, C9, C10,
C11, C12, C13, C15
1000 pF Chip Capacitors ATC100B102KT50XT ATC
C4 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC
C6 470 pF Chip Capacitor ATC100B471JT200XT ATC
C14, C16 1 F, 100 V Chip Capacitors C3225JB2A105KT TDK
C17 2.2 F, 100 V Chip Capacitor HMK432B7225KM--T Taiyo Yuden
C18 470 F, 100 V Electrolytic Capacitor MCGPR100V477M16X32--RH Multicomp
C19, C20 15 pF Chip Capacitors ATC100B150JT500XT ATC
L1 43 nH Inductor B10TJLC Coilcraft
L2 7 Turn, #14 AWG, ID = 0.4Inductor Handwound Freescale
R1 11 , 1/4 W Chip Resistor CRCW120611R0FKEA Vishay
T1 Balun TUI--9 Comm Concepts
Coax1, Coax2 Flex Cables, 10.2 ,4.7TC--12 Comm Concepts
Coax3 Coax Cable, 50 ,6.7SUCOFORM250--01 Huber+Suhner
PCB 0.030”, r=3.50 TC--350 Arlon
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
13
RF Device Data
Freescale Semiconductor, Inc.
Figure 18. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Schematic
C7
C8
C9
C10
C11
C12
RF
OUTPUT
C4
COAX1
COAX2
COAX3
C5
C6
C19 C20
C17C16C15 C18
VDD
C13 C14
L2
B1
C1
VGS
C3
R1
C2
L1
RF
INPUT
T1
+
14
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
TYPICAL CHARACTERISTICS — 144--148 MHz REFERENCE CIRCUIT
VDD =50Vdc,I
DQ = 200 mA, Pout = 1100 W CW
f
MHz
Zsource
Zload
144 1.6 + j5.0 3.9 + j1.5
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 19. Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
Zsource Zload
50 50
31
20
90
50
28
70
50
Pout, OUTPUT POWER (WATTS)
Figure 20. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
26
24
2000
25
40
60
80
27
29
1000
D
VDD =50Vdc,I
DQ = 2500 mA, f = 144 MHz
30
100
30
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 21. Intermodulation Distortion Products
versus Output Power
--100
0
-- 2 0
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 9 0
-- 3 0
-- 4 0 IDQ = 2500 mA
10 1000
-- 2 0
100 2000
VDD =50Vdc
f1 = 143.9 MHz, f2 = 144.1 MHz
Two--Tone Measurement
3rd Order
3rd Order
7th Order
7th Order
5th Order
4500 mA
4500 mA
Gps
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
15
RF Device Data
Freescale Semiconductor, Inc.
HARMONIC MEASUREMENTS
Figure 22. 144 MHz Harmonics @ 1 kW
H2 H3 H4 H5
--42 dB --33 dB --37 dB --39 dB
144 MHz, 1 kW
1.018 kW
144.00000000 MHz
--42.07 dB
144.00501002 MHz
--32.87 dB
288.00501002 MHz
--37.26 dB
432.00501002 MHz
--38.89 dB
576.00501002 MHz
B1[T1]
1[T1]
2[T1]
3[T1]
4[T1]
1
2
34
1
Ref Lvl
1.5 E 04 W
Marker 1 [T1]
1.018
144.00000000
RBW
VBW
SWT
3MHz
3MHz
5ms
RF Att
Unit
10 dB
W
77.7 dB Offset
1VIEW 1SA
EXT
kW
MHz
Center 525 MHz 95 MHz/ Span 950 MHz
A
16
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
PACKAGE DIMENSIONS
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
17
RF Device Data
Freescale Semiconductor, Inc.
18
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
19
RF Device Data
Freescale Semiconductor, Inc.
20
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
21
RF Device Data
Freescale Semiconductor, Inc.
22
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Nov. 2010 Initial Release of Data Sheet
1Jan. 2011 Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGS to RFin/VGS,p.1
2May 2012 Added Application Circuits Typical Performance table, p. 1
Capable of Handling VSWR bullet: corrected 1250 Peak Output Power value to 1500 and converted to table,
pp. 1, 3
Table 1, Max Ratings: final DC test specification for Drain--Source Voltage changed from +125 to +133 Vdc,
p. 2
Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
Table 4, Off Characteristics: final DC test specification for Drain--Source Breakdown Voltage minimum value
changed from 125 to 133 Vdc, p. 2
Table 4, On Characteristics: added Forward Transconductance, p. 2
Fig. 10, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 7
Added Fig. 12, Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--pull, p. 8
Added Fig. 13, 87.5--108 MHz FM Broadcast Reference Circuit Component Layout, p. 9
Added Table 9, 87.5--108 MHz FM Broadcast Reference Circuit Component Designations and Values, p. 9
Added Fig. 14, 87.5--108 MHz FM Broadband Reference Circuit Schematic, p. 10
Added Fig. 15, Power Gain and Drain Efficiency versus Output Power (87.5--108 MHz), p. 11
Added Fig. 16, Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load
Impedance, p. 11
Added Fig. 17, 144--148 MHz Reference Circuit Component Layout, p. 12
Added Table 9, 144--148 MHz Reference Circuit Component Designations and Values, p. 12
Added Fig. 18, 144--148 MHz Reference Circuit Schematic, p. 13
Added Fig. 19, Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance, p. 14
Added Fig. 20, Power Gain and Drain Efficiency versus Output Power (144--148 MHz), p. 14
Added Fig. 21, Intermodulation Distortion Products versus Output Power (144--148 MHz), p. 14
Added Fig. 22, 144 MHz Harmonics @ 1 kW, p. 15
3Oct. 2012 Added part number MRFE6VP61K25GSR5, p. 1
Added 2282--02 (NI--1230S--4 Gull) package isometric, p. 1, and Mechanical Outline, p. 20, 21
4Mar. 2013 MRFE6VP61K25HR6 tape and reel option replaced with MRF6VP61K25HR5 per PCN15551.
Replaced Case Outline 98ASB16977C, Issue E with Issue F, p. 16, 17. Changed dimension C from
0.150--0.200to CC 0.170--0.190.
Replaced Case Outline 98ARB18247C, Issue F with Issue G, p. 18, 19. Changed dimension C from
0.150--0.200to CC 0.170--0.190. Added minimum Z dimension R0.00.
Replaced Case Outline 98ASA00459D, Issue O with Issue A, p. 20, 21. Changed dimension C from
0.150--0.200to CC 0.170--0.190. Corrected positional tolerance for dimension S.
4.1 Mar. 2014 MRFE6VP61K25HR5 part added to data sheet device box, p. 1
MRFE6VP61K25HSR6 tape and reel option replaced with MRFE6VP61K25HSR5 per PCN15551. (Note: this
copy updates the copy from Rev. 4 Revision History to accurately reflect the part number replacement in this
data sheet as described in PCN15551.)
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
23
RF Device Data
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software
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Document Number: MRFE6VP61K25H
Rev. 4.1, 3/2014
