DMC9610M Silicon NPN epitaxial planar type Unit: mm For digital circuits DMC5610M in SSMini5 type package Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: S2 Basic Part Number Dual DRC2123J (Common emitter) Packaging DMC9610M0R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25C Parameter Tr1 Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 125 mW Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 4: Collector (Tr2) 5: Collector (Tr1) 1: Base (Tr1) 2: Emitter (Common) 3: Base (Tr2) Panasonic JEITA Code SSMini5-F4-B SC-107BB SOT-665 (C1) 5 (C2) 4 Tr2 Tr1 R2 R2 R1 R1 1 (B1) 2 (E) Resistance value 3 (B2) R1 2.2 k R2 47 k Electrical Characteristics Ta = 25C3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 mA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 mA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA VCE(sat) IC = 10 mA, IB = 0.5 mA Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 A Collector-emitter saturation voltage 80 0.25 1.2 V V 0.4 V Input resistance R1 -30% 2.2 +30% kW Resistance ratio R1 / R2 0.037 0.047 0.057 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: October 2013 Ver. FED 1 DMC9610M PT Ta IC VCE 150 75 50 25 250 A 80 200 A 60 150 A 40 100 A 20 40 80 120 160 0 200 0 2 8 10 100 0 0.1 12 Ta = 85C -40C 1 10 100 Collector current IC (mA) DMC9610M_IO-VIN DMC9610M_VIN-IO 10 Output current IO (mA) 1 -40C 200 IO VIN IC / IB = 20 0.1 6 25C 300 Collector-emitter voltage VCE (V) VCE(sat) IC 10 4 Ta = 85C 1 VIN IO 100 VO = 5 V VO = 0.2 V Input voltage VIN (V) 0 50 A VCE = 10 V 400 Forward current transfer ratio hFE 100 350 A 300 A DMC9610M_VCEsat-IC Collector-emitter saturation voltage VCE(sat) (V) IB = 400 A 100 Collector current IC (mA) Total power dissipation PT (mW) 125 Ambient temperature Ta (C) Ta = 85C 25C 10-1 -40C 10-2 10 1 25C Ta = -40C 85C 25C 0.01 0.1 1 10 Collector current IC (mA) 2 hFE IC 120 Ta = 25C 0 DMC9610M_hFE-IC DMC9610M_IC-VCE DMC9610M_PT-Ta 100 10-3 0 0.2 0.4 0.6 0.8 1.0 Input voltage VIN (V) Ver. FED 1.2 0.1 0.1 1 10 Output current IO (mA) 100 DMC9610M SSMini5-F4-B Unit: mm Land Pattern (Reference) (Unit: mm) 3 Ver. FED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. 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