2N2218 2N2218A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature 2N2218 60 2N2218A 75 UNITS V 30 40 V VEBO IC 5.0 PD PD TJ, Tstg V mA 800 mW 3.0 W -65 to +200 C ELECTRICAL SYMBOL ICBO ICBO CHARACTERISTICS: (TA=25C) TEST CONDITIONS VCB=50V VCB=60V ICEV IEBO VCE=60V, VEB=3.0V VEB=3.0V BVCBO IC=10A BVCEO IC=10mA 30 - 40 - V BVEBO IE=10A 5.0 - 6.0 - V VCE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA - 0.4 - 0.3 V - 1.6 - 1.0 V VCE(SAT) VBE(SAT) 2N2218A MIN MAX - UNITS nA - - - 10 nA - - - 10 nA - 10 - 10 nA 60 - 75 - V - 1.3 - 1.2 V - 2.6 - 2.0 V VCE=10V, IC=100A VCE=10V, IC=1.0mA 20 - 20 - 25 - 25 - VCE=10V, IC=10mA VCE=10V, IC=150mA 35 - 35 - 40 120 40 120 VCE=1.0V, IC=150mA VCE=10V, IC=500mA 20 - 20 - hFE 20 - - - hFE VCE=10V, IC=500mA - - 25 - VBE(SAT) hFE hFE hFE hFE hFE IC=150mA, IB=15mA IC=500mA, IB=50mA 2N2218 MIN MAX 10 6.0 800 R1 (31-July 2013) 2N2218 2N2218A SILICON NPN TRANSISTORS ELECTRICAL SYMBOL fT Cob ton toff CHARACTERISTICS - Continued: (TA=25C) 2N2218 TEST CONDITIONS MIN MAX VCE=20V, IC=20mA 250 VCB=10V, f=100kHz VCC=30V, IC=150mA, IB=15mA VCC=30V, IC=150mA, IB1=IB2=15mA 2N2218A MIN MAX 250 - UNITS MHz - 8.0 - 8.0 pF - 35 - 35 ns - 285 - 285 ns TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (31-July 2013) w w w. c e n t r a l s e m i . c o m 2N2218 2N2218A SILICON NPN TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (31-July 2013) w w w. c e n t r a l s e m i . c o m