Jan-04-2002
1
BFR949F
1
2
3
NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1 dB at 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR949F RKs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 10 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 1.5
Collector current IC35 mA
Base current IB4
Total power dissipation1)
TS
93°C
Ptot 250 mW
Junction temperature Tj150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS
225 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Jan-04-2002
2
BFR949F
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 10 - - V
Collector-emitter cutoff current
VCE = 20 , VBE = 0 V
ICES - - 100 µA
Collector -base cutoff current
VCB = 10 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - - 0.1 µA
DC current gain-
IC = 5 mA, VCE = 6 V
hFE 100 140 200 -
Jan-04-2002
3
BFR949F
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 15 mA, VCE = 6 V, f = 1 GHz
fT7 9 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = vbe = 0
Ccb - 0.3 - pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = vbe = 0
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = vcb = 0
Ceb - 0.7 -
Noise figure
IC = 5 mA, VCE = 6 V, ZS = ZSopt ,
f = 1 GHz
IC = 3 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz
F
-
-
1
1.5
2.5
-
dB
Power gain1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt ,
ZL = ZLopt, f = 900 MHz
Gms - 21 - -
Power gain, maximum available1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
Gma - 15.5 - dB
Transducer gain
IC = 15 mA, VCE = 6 V, ZS = ZL = 50
,
f = 1 GHz
IC = 10 mA, VCE = 8 V, ZS = ZL = 50
,
f = 1.8 GHz
|S21e|2
-
-
17
12
-
-
dB
1Gma = |S21 / S12| (k-(k²-1)1/2), Gms = |S21 / S12|
Jan-04-2002
4
BFR949F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
BF = 120 -
IKF = 0.152 mA
BR = 33.322 -
IKR = 0.063 A
RB = 20.766
RE = 0.101 -
VJE = 0.568 V
XTF = 0.00894 -
PTF = 0 deg
MJC = 0.334 -
CJS = 0 fF
NK = 0.5 -
FC = 0.924
NF = 1.085 -
ISE = 1.86 pF
NR = 1.095 -
ISC = 3.68 pA
IRB = 72.2 mA
RC = 0.849
MJE = 0.456 -
VTF = 0.198 V
CJC = 459 fF
XCJC = 0.217 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
IS = 4.36 fA
VAF = 30 V
NE = 1.998 -
VAR = 41.889 V
NC = 1.569 -
RBM = 0.823
CJE = 291 fF
TF = 8.77 ps
ITF = 1.336 mA
VJC = 1.048 V
TR = 1.39 ns
MJS = 0-
.--
All parameters are ready to use, no scalling is necessery.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
L1 = 0.556 nH
L2 = 0.657 nH
L3 = 0.381 nH
C1 = 43 fF
C2 = 123 fF
C3 = 66 fF
C4 = 10 fF
C5 =36 fF
C6 = 47 fF
EHA07524
Transistor C’ L
E’
B’
3
4
C
C
Chip
E
L
1
5
C
B
2
L
C
6
C
1
C
2
C
3
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM
or see Internet: http://www.infineon.com/silicondiscretes
