international HEXFET power mosrets [rer|Rectifier Fully isolated HEXFET TO-3P FullPak P-Channel V(BR)pss Drain-to-Source Rog(on) Ip Continuous |Ip Continuous | RipycMax | Py@T, = 25C| Case Part Breakdown On-State | Drain Current | Drain Current| Thermal Max Power | Outline Number Voltage Resistance 25C 100C Resistance) Dissipation | Number Case Style (Voit) (Ohms) (Amps) (Amps) (c/w) (Watts) (1) IRFIP9140 -100 0.20 15 11 1.5 100 H7_ | TO-247AC FullPak IRFIP9240 -200 0.50 -8.9 5.6 15 83 HEXSense Power MOSFETs provide the user with the ability to sense the current through the device by measuring a small proportion of the total drain current. The current-sensing is accomplished through the addition of the kelvin and current-sense connections providing for greater accuracy, wider bandwidths and cost-savings in current-mode applications. HEXSENSE N-Channel V(BR)pss 1 Drain-to-Sourca Aps(on) | !p Continuous | Ip Continuous} RipscMax |Py @ T, = 25C| Nominal | Case Part Breakdown | On-State | Drain Current | Drain Current] Thermal Max Power Sense | Outline Number Voltage Resistance 25C 100C Resistance Dissipation | Number | Number Case Style (Volt) (Ohms) (Amps) (Amps) (C/AW) (Watts) (1) IRCZ24 60 0.10 17 12 25 60 820 H8 | TO-220 Hexsense IRCZ34 60 0.050 30 21 1.7 88 1480 IRCZ44 60 0.028 50 37 1.0 150 2720 IRC530 100 0.16 14 10 17 88 1540 IRC540 100 0.077 28 20 1.0 150 2810 _. IRC630 200 0.40 9.0 5.7 1.7 74 1570 SS IRC640 200 0.18 18 11 1.0 125 2880 IRC634 250 0.45 8.1 5.1 17 74 1580 IRC644 250 0.28 14 8.5 1.0 125 2900 IRC730 400 1.0 5.5 3.5 1.0 74 1600 IRC740 400 0.55 10 6.3 1.0 125 2940 IRC830 500 1.5 45 3.0 1.7 74 1600 IRC840 500 0.85 8.0 5.1 1.0 125 2970 IRCPO54 60 0.014 70 64 065 | 230 2430 | pg | T0-247 Hexsense Part Number in bold indicates new product. (1) For case outline drawing see page 0-2. F-11