ky Z04xxxF SENSITIVE GATE TRIACS FEATURES aw IAMS) =4A a VormM = 400V to 800V ga lets 3mAto< 25mA DESCRIPTION The 2Z04xxxF series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where high gate sensitivity or high switching performances are required (like touch T0202-3 dimmers, fan, electrovalue control,...). (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit ITRMS) RMS on-state current Te= 75C 4 A (360 conductionangle) Ta= 25C 0.95 ITSM Non repetitive surge peak on-state current | tp=8.3ms 22 A (Tj initial = 25C ) tp =10ms 20 7 It Value for fusing tp =10ms 2 As dlfdt Critical rate of rise of on-state current Repetitive 10 A/us Ig=50mA dig /dt=0.1 A/us. F =50 Hz Non 50 Repetitive Tstg Storage and operating junction temperature range -40, + 150 C qj -40, + 125 Tl Maximum lead temperature for soldering during 10s at 260 C 4. 5mmtrom case Voltage . Symbol Parameter Unit D M N VDRM Repetitive peak off-state voliage 400 |} 600 | 800 Vv VRRM Tj = 125C August 1998 Ed: 1A 1/4 ZO4XxXF THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) | Junctionto ambient 100 CAV Rth(j-c) | Junctionto case for D.C 10 CAV Rth(j-c) | Junctionto case tor A.C 360conduction angle (F=50Hz} 7.5 CAV GATE CHARACTERISTICS Pe javye 0.2Wmax. Pem=3W max. (tp = 20 ps) Iam = 1.2 Amax. (tp = 20 ps) Veo =0.2Vmin. (Vp=VbRM = Ri=3.3kKQ Tj= 125C) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Sensitivity Unit 02 | 05 | 09 | 10 lat Vp=12V (DC) Ri=33Q | Tj= 26C | II-III | MAX | 3 5 10 | 25 | mA Vat Vp=12V (DC) Ri=33Q | Tj=25C | I-ll-lll-IlV | MAX 1.5 Vv IH Ir=50mA Gateopen Tj= 25C MAX | 3 5 10 | 25 mA IL Ie= 1.2 lat Tj= 25C I-lI-IV | MAX | 6 10 | 15 | 25 | mA II MAX | 12 | 15 | 25 | 50 VT* Itw=5.5A tp=380us Tj= 25C MAX 2 V IDRM Vb = VbRM Tj= 25C MAX 5 nA IRRM VR = VRRM Tj= 110C MAX 200 dV/adt* | Vp=67%Vorm Tj= 110C MIN | 10 | 20 | 100 | 200] V/us Gate open (dV/dtjc* | (di/dt}c= 1.3 A/ms Tj= 110C MIN |} 0.5] 1 2 Vius {dl/dt)c= 1.8 A/ms Tj= 110C MIN 5 | Vius * For either polarity of electrode Az voltage with reterence to electrode Ai ORDERING INFORMATION Z TRIAG TOP GLASS I CURRENT 04 05 SENSITIVITY wT PACKAGE : F=TOQ202-3 VOLTAGE 2/4 x ZO4XxXxF Fig.1 : Maximum RMS power dissipation versus RMS on-state current. P(W) 4) Ql= 180 i) a J ae al= soo! ZO . 90 [ a op NL! I+. = 60. , NN Be | @= 30 1 \ ail = ao Ff Ww ' Terns) A) Fig.3: RMS on-state current versus case tempera- ture. im rms) A) IN 0.8 hs ~Y 0. NJ 0.2 \ Tamb(c) iN o 1 1 1 ~N 0 10 20 30 40 50 GO 70 80 90 100110120130 Fig.5: Relativevariation of gate trigger current and holding current versus junction temperature. Igt{Tj] Ih[Tj] igiftj=25 C] ih[Tj=25 C] 6 TICS) 40 -20 O 20 40 60 80 100 120 140 Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase). P (W) Tease @C) 7 rf5 6 Rthi(j-c) 5 rss 4 3 \ , \ L105 Ath{j-a) \ r115 1 \ Tamb (C) | \ 105 0 20 40 #60 #80 100 120 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(-aV/Rih{j-a) 1.00 0.10 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. Tonal) 20 [TTT Tj initial = 25C 15 a 10 iH P| | ee, 5 Number of cycles 0 J iii iit | 1 10 100 1000 3/4 ZO4XxXF Fig.? : Non repetitive surge peak on-state current Fig.8: On-statecharacteristics (maximum values). for a sinusoidal pulse with width : tp < 10ms, and corresponding value of I*t. ltsm (A). Ft (A?s) lTm (A) 100 100 Tj initial = 25C Tj initial 40 25C Ts 10 4 T| max Vio =0.98V Ri =0. 180g Vin) o 608 61 15 2 25 3 35 4 45 0.1 PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS REF. Millimeters Inches A Typ. Max. Typ. Max. A 10.1 0.398 C 7.3 0.287 Cc D 10.5 0.413 tty E 7A 0.290 _o , lq 1 F 1.5 0.059 D Jy H 0.51 0.020 _P ly <H J 1.5 0.059 M 45 0.177 > ENT N 5.3 0.209 > N N1 2.54 0.100 O 1.4 0.055 P 0.7 0.028 Marking : type number Weight: 1g Information furnished is believed to be accurate and reliable. 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