Ver. EEDPublication date: October 2013 1
DMC96102
Silicon NPN epitaxial planar type
For digital circuits
DMC56102 in SSMini5 type package
Features
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: F5
Basic Part Number
Dual DRC2124E (Common emitter)
Packaging
DMC961020R
Embossed type (Thermo-compression sealing): 8
000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Tr1
Tr2
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V
Collector current IC100 mA
Overall
Total power dissipation PT125 mW
Junction temperature Tj150 °C
Operating ambient temperature Topr –40 to +85 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 mA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 60
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V
Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA 2.6 V
Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA 0.8 V
Input resistance R1-30% 22 +30% kW
Resistance ratio R1 / R20.8 1.0 1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base (Tr1)
2: E
mitter (Common)
3: Base (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
Panasonic SSMini5-F4-B
JEITA SC-107BB
Code SOT-665
(C2)
4
Tr1Tr2
(C1)
5
1
(B1)
3
(B2)
2
(E)
R1
R1
R2
R2
Resistance value R122 kW
R222 kW
Ver. EED
DMC96102
2
PT Ta IC VCE hFE IC
VCE(sat) IC IO VIN VIN IO
0
0 200 160 40 120 80
25
100
75
50
150
125
DMC96102_PT-Ta
Ambient temperature Ta (°C)
Total power dissipation PT (mW)
0
0 12 2 10 4 8 6
120
100
80
60
40
20
Collector current IC (mA)
Collector-emitter voltage VCE (V)
DMC96102_IC-VCE
Ta = 25°C
IB = 350 µA
300 µA
250 µA
200 µA
150 µA
100 µA
50 µA 0
0.1
400
250
350
300
200
150
100
50
1 10 100
Forward current transfer ratio hFE
Collector current IC (mA)
DMC96102_hFE-IC
25°C
−40°C
Ta = 85°C
VCE = 10 V
0.01
0.1
0.1
1
10
1 10 100
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
DMC96102_VCEsat-IC
25°C
−40°C
Ta = 85°C
IC / IB = 20
0 2.0 1.5 1.0 0.5
10−3
10−1
10−2
10
1
DMC96102_IO-VIN
VO = 5 V
Input voltage VIN (V)
Output current IO (mA)
25°C
−40°C
Ta = 85°C
0.1
0.1
1
10
100
1 10 100
Input voltage VIN (V)
Output current IO (mA)
DMC96102_VIN-IO
VO = 0.2 V
25°C
85°C
Ta = −40°C
Ver. EED
DMC96102
3
Land Pattern (Reference) (Unit: mm)
SSMini5-F4-B Unit: mm
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