NJG1122PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION The NJG1122PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12-B4 is adopted. QPACKAGE OUTLINE NJG1122PB4 QFEATURES OLow voltage operation OLow CTL voltage operation OLow current consumption +2.7V +1.85V 2.4mA typ. @2.1GHz band (High Gain Mode) 2.0mA typ. @800MHz band (High Gain Mode) 4uA typ. @800MHz / 2.1GHz band (Low Gain Mode) FFP12-B4 (Package size: 2.0 x 2.0 x 0.65mm typ) OSmall package [High gain mode] OHigh gain OLow noise figure 14.5dB typ. @fRF =2140MHz16.0dB typ. @fRF =885MHz 1.7dB typ. @fRF=2140MHz 1.45dB typ. @fRF =885MHz -3.5dBm typ. @ fRF=2140.0+2140.1MHz, Pin=-36dBm -3.5dBm typ. @fRF=885.0+885.1MHz, Pin=-36dBm OHigh Input IP3 [Low gain mode] OGain -4.0dB typ. @fRF=2140MHz -4.5dB typ. @fRF=885MHz 4.0dB typ. @fRF=2140MHz 4.5dB typ. @fRF=885MHz +2.5dBm typ. @fRF=2140.0+2140.1MHz, Pin=-20dBm +2.0dBm typ. @fRF=885.0+885.1MHz, Pin=-20dBm OLow noise figure OHigh Input IP3 QPIN CONFIGURATION (Top View) VINV 9 VCTL1 8 GND 7 RFIN2 RFOUT2 10 6 GND 11 Logic Circuit 2.1GHz Band GND 5 RFIN1 RFOUT1 12 4 800MHz Band GND 1 VCTL2 2 EXTCAP Pin Connection 1. GND 2. VCTL2 3. EXTCAP 4. RFOUT1 (800MHz band) 5. GND 6. RFOUT2 (2.1GHz band) 7. GND 8. VCTL1 9. VINV 10. RFIN2 (2.1GHz band) 11. GND 12. RFIN1 (800MHz band) 3 Note: Specifications and description listed in this catalog are subject to change without prior notice. Ver.2005-08-29 -1- NJG1122PB4 QABSOLUTE MAXIMUM RATINGS (Ta=+25C, Zs=Zl=50) PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Operating voltage VDD 5.0 V Inverter supply voltage VINV 5.0 V Control voltage VCTL 5.0 V Input power Pin +15 dBm Power dissipation PD 300 mW Operating temperature Topr -40~+85 C Storage temperature Tstg -55~+125 C VDD=2.7V QELECTRICAL CHARACTERISTICS 1 (DC) (VDD=VINV=2.7V, Ta=+25C, Zs=Zl=50) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage VDD 2.5 2.7 4.5 V Inverter supply voltage VINV 2.5 2.7 4.5 V Control voltage1 (High) VCTL1(H) 1.44 1.85 VINV+0.3 V Control voltage1 (Low) VCTL1(L) 0 0 0.8 V Control voltage 2 (High) VCTL2(H) 1.44 1.85 VINV+0.3 V Control voltage 2 (Low) VCTL2(L) 0 0 0.8 V Operating current1 800MHz[High gain mode] Operating current2 2.1GHz[High gain mode] Operating current 3 800M/2.1GHz[Low gain mode] IDD1 VCTL1=2.7V, VCTL2=1.85V - 2.4 2.9 mA IDD2 VCTL1=0V, VCTL2=1.85V - 2.0 2.4 mA IDD3 VCTL1=0 or 1.85V, VCTL2=0V - 4 13 uA Inverter current1 IINV1 RF OFF, VCTL=1.85V - 160 250 uA Inverter current2 IINV2 RF OFF, VCTL=0V - 210 330 uA Control current 1 ICTL1 VCTL1=1.85V - 14 35 uA Control current 2 ICTL2 VCTL2=1.85V - 14 35 uA -2- NJG1122PB4 QELECTRICAL CHARACTERISTICS 2 (2.1GHz band High Gain mode) (VDD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V, fRF=2140MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Small signal gain1 Noise figure1 Pin at 1dB gain compression point1 Input 3rd order intercept point SYMBOL MIN TYP MAX UNITS Gain1 13.0 14.5 16.0 dB NF1 - 1.7 2.0 dB P-1dB(1) -16.0 -14.0 - dBm -6.0 -3.5 - dBm IIP3_1 CONDITIONS f1=fRF, f2=fRF+100kHz, Pin=-36dBm RF Input VSWR1 VSWRI 1 - 1.7 2.2 RF Output VSWR1 VSWRo1 - 1.9 2.5 QELECTRICAL CHARACTERISTICS 3 (2.1GHz band Low Gain mode) (VDD=VINV=2.7V, VCTL1=VCTL2=0V, fRF=2140MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Small signal gain2 Noise figure2 Pin at 1dB gain compression point2 Input 3rd order intercept point2 SYMBOL MIN TYP MAX UNITS Gain2 -6.0 -4.0 -2.5 dB NF2 - 4.0 6.0 dB P-1dB(2) +5.0 +11.0 - dBm 0 +2.5 - dBm IIP3_2 CONDITIONS F1=fRF, f2=fRF+100kHz, Pin=-36dBm RF Input VSWR2 VSWRI 2 - 2.0 2.5 RF Output VSWR2 VSWRo2 - 1.6 2.0 -3- NJG1122PB4 QELECTRICAL CHARACTERISTICS 4 (800MHz band High Gain mode) (VDD=VINV=2.7V, VCTL1=VCTL2=1.85V, fRF=885MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Small signal gain1 Noise figure1 Pin at 1dB gain compression point1 Input 3rd order intercept point SYMBOL MIN TYP MAX UNITS Gain3 14.5 16.0 17.5 dB NF3 - 1.45 1.75 dB P-1dB(3) -17.0 -15.0 - dBm -6.0 -3.5 - dBm IIP3_3 CONDITIONS f1=fRF, f2=fRF+100kHz, Pin=-36dBm RF Input VSWR1 VSWRI 3 - 1.6 2.1 RF Output VSWR1 VSWRo3 - 1.7 2.3 QELECTRICAL CHARACTERISTICS 5 (800MHz band Low Gain mode) (VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V, fRF=885MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Small signal gain2 Noise figure2 Pin at 1dB gain compression point2 Input 3rd order intercept point2 SYMBOL MIN TYP MAX UNITS Gain4 -6.0 -4.0 -3.0 dB NF4 - 4.5 6.5 dB P-1dB(4) +4.0 +9.0 - dBm 1.5 +2.0 - dBm IIP3_4 CONDITIONS F1=fRF, f2=fRF+100kHz, Pin=-36dBm RF Input VSWR2 VSWRI 4 - 1.7 2.3 RF Output VSWR2 VSWRo4 - 1.6 2.1 -4- NJG1122PB4 QTERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 GND 2 VCTL2 3 EXTCAP An external bypass capacitor is required. (Please refer to TEST CIRCUIT.) 4 RFOUT1 Output terminal of 800MHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L3) to connect power supply. 5 GND 6 RFOUT2 7 GND 8 VCTL1 9 VINV Inverter voltage supplies terminal. 10 RFIN2 RF input terminal of 2.1GHz band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required. 11 GND Ground terminal. (0V) 12 RFIN1 RF input terminal of 800MHz band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required. Ground terminal. (0V) Control voltage supply terminal. The high level voltage of this terminal selects High Gain Mode. The low level voltage of this terminal selects Low Gain Mode. Ground terminal. (0V) Output terminal of 2.1GHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L7) to connect power supply. Ground terminal. (0V) Control voltage supply terminal. The high level voltage of this terminal selects 800MHz.band. The low level voltage of this terminal selects 2.1GHz band. CAUTION 1) Ground terminal (No.1, 5, 7, 11) should be connected to the ground plane as low inductance as possible. -5- NJG1122PB4 QELECTRICAL CHARACTERISTICS 1 (2.1GHz band High Gain Mode) Pout vs. Pin Gain vs. Pin (f=2140MHz, V DD=VINV=2.7V, VCTL1=0V, VCTL 2=1.85V) 10 18 5 16 0 14 Pout -5 Gain (dB) Pout (dBm) (f=2140MHz, V DD=VINV=2.7V, VCTL 1=0V, VCTL 2=1.85V) -10 -15 -20 Gain 12 10 8 6 P-1dB(IN)=-14.0dBm P-1dB(IN)=-14.0dBm -25 4 -30 -40 -30 -20 -10 0 2 -40 10 -30 -20 Pin (dBm) -10 0 10 Pin (dBm) NF vs. frequency Pout, IM3 vs. Pin (VDD=VINV=2.7V, VCTL1=0V, VCTL 2=1.85V) (f=2140+2140.1MHz, V DD=VINV=2.7V, VCTL 1=0V, VCTL 2=1.85V) 4 20 3.5 Pout, IM3 (dBm) Noise Figure (dB) 0 3 2.5 2 NF 1.5 Pout -20 -40 -60 1 IM3 -80 0.5 0 2 2.05 2.1 2.15 2.2 2.25 -100 -40 2.3 0 P-1dB(IN) vs. frequency 13 1 -10 0 11 -1 10 -2 9 -3 IIP3 7 -4 -5 2.12 2.14 2.16 frequency (GHz) 2.18 -6 2.2 P-1dB(IN) (dBm) -8 OIP3 10 (VDD=VINV=2.7V, VCTL 1=0V, VCTL 2=1.85V) 2 IIP3 (dBm) OIP3 (dBm) -10 OIP3, IIP3 vs. frequency 8 -6- -20 Pin (dBm) 14 6 2.1 -30 frequency (GHz) (df=100kHz, Pin=-36dBm, V DD=VINV=2.7V, VCTL 1=0V, VCTL 2=1.85V) 12 IIP3=-3.3dBm -12 P-1dB(IN) -14 -16 -18 -20 -22 2.1 2.12 2.14 2.16 frequency (GHz) 2.18 2.2 NJG1122PB4 QELECTRICAL CHARACTERISTICS 2 (2.1GHz band High Gain Mode) Gain, NF vs. VDD OIP3, IIP3 vs. VDD (f=2140MHz, V INV=2.7V, VCTL1=0V, VCTL 2=1.85V) (f=2140+2140.1MHz, Pin=-36dBm, V INV=2.7V, VCTL1=0V, VCTL 2=1.85V) Gain (dB) 15 3 4 12 2 3.5 11 14 3 13 2.5 12 2 NF 1 OIP3 10 0 9 -1 8 -2 IIP3 11 1.5 7 -3 10 1 6 -4 0.5 5 9 2 2.5 3 3.5 4 4.5 5 -5 2 2.5 3 VDD (V) 4 4.5 5 VSWR vs. VDD P-1dB(IN) vs. VDD (f=2140MHz, V INV=2.7V, VCTL1=0V, VCTL 2=1.85V) -6 4 -8 3.5 -10 3 VSWRi, VSWRo P-1dB(IN) (dBm) 3.5 VDD (V) (f=2140MHz, V INV=2.7V, VCTL 1=0V, VCTL2=1.85V) -12 IIP3 (dBm) Gain 13 OIP3 (dBm) 16 4.5 NF (dB) 17 P-1dB(IN) -14 -16 VSWRi VSWRo 2.5 2 1.5 -18 1 -20 0.5 0 -22 2 2.5 3 3.5 4 4.5 5 VDD (V) 2 2.5 3 3.5 4 4.5 5 VDD (V) IDD vs. VDD (PRF=OFF, VINV=2.7V, VCTL1=0V, VCTL 2=1.85V) 4 3.5 IDD (mA) 3 2.5 IDD 2 1.5 1 0.5 0 2 2.5 3 3.5 4 4.5 5 VDD (V) -7- NJG1122PB4 QELECTRICAL CHARACTERISTICS 3 (2.1GHz band High Gain Mode) Gain, NF vs. Temperature OIP3, IIP3 vs. Temperature (f=2140MHz, V DD=VINV=2.7V, VCTL 1=0V, VCTL2=1.85V) 16 4.5 13 3 4 12 2 3.5 11 14 3 13 2.5 12 2 NF OIP3 (dBm) Gain (dB) 15 NF (dB) Gain 10 0 9 -1 8 -2 11 1.5 7 10 1 6 9 -50 0 50 0.5 100 5 -50 o Temperature ( C) -8 3.5 -10 3 VSWRi, VSWRo P-1dB(IN) (dBm) 4 P-1dB(IN) -14 -16 0.5 100 Temperature ( C) IDD vs. Temperature (PRF=OFF, VINV=2.7V, VCTL 1=0V, VCTL2=1.85V) 5 IDD (mA) 4 3 IDD 2 1 -8- 0 50 Temperature (oC) 100 VSWRi VSWRo 1.5 -20 0 -50 -5 100 50 o 2 1 50 0 2.5 -18 o -4 VSWR vs. Temperature -6 0 -3 (f=2140MHz, V DD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V) (f=2140MHz, V DD=VINV=2.7V, VCTL 1=0V, VCTL2=1.85V) -22 -50 IIP3 Temperature ( C) P-1dB(IN) vs. Temperature -12 1 OIP3 0 -50 0 50 Temperature (oC) 100 IIP3 (dBm) 17 (f=2140+2140.1MHz, Pin=-36dBm, V DD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V) NJG1122PB4 QELECTRICAL CHARACTERISTICS 4 (2.1GHz band High Gain Mode) -9- NJG1122PB4 QELECTRICAL CHARACTERISTICS 5 (2.1GHz band High Gain Mode) k factor vs. frequency (VDD=VINV=2.7V, VCTL 1=0V, VCTL 2=1.85V) 20 k factor 15 10 5 0 0 5 10 frequency (GHz) - 10 - 15 20 NJG1122PB4 Pout vs. Pin Gain vs. Pin (f=2140MHz, V DD=VINV=2.7V, VCTL1=0V, VCTL 2=0V) (f=2140MHz, V DD=VINV=2.7V, VCTL1=0V, VCTL 2=0V) 10 0 0 -2 -10 -4 Gain (dB) Pout (dBm) QELECTRICAL CHARACTERISTICS 6 (2.1GHz band Low Gain Mode) Pout -20 Gain -6 -8 -30 -10 P-1dB(IN)=+11.4dBm -40 -50 -40 -30 -20 -10 0 10 P-1dB(IN)=+11.4dBm -12 -40 20 -30 -20 -10 0 10 20 Pin (dBm) Pin (dBm) NF vs. frequency Pout, IM3 vs. Pin (VDD=VINV=2.7V, VCTL 1=0V, VCTL 2=0V) (f=2140+2140.1MHz, V DD=VINV=2.7V, VCTL1=0V, VCTL 2=0V) 9 20 8 6 Pout, IM3 (dBm) Noise Figure (dB) 0 7 NF 5 4 -20 -40 -60 IM3 3 IIP3=+5.3dBm -80 2 1 2 2.05 2.1 2.15 2.2 2.25 -100 -40 2.3 -10 0 OIP3, IIP3 vs. frequency P-1dB(IN) vs. frequency 2 14 16 -2 10 -4 8 IIP3 -6 -8 6 4 2.12 2.14 2.16 frequency (GHz) 2.18 2 2.2 IIP3 (dBm) 12 P-1dB(IN) (dBm) 18 OIP3 10 (VDD=VINV=2.7V, VCTL 1=0V, VCTL 2=0V) 16 -10 2.1 -20 Pin (dBm) 4 0 -30 frequency (GHz) (df=100kHz, Pin=-36dBm, V DD=VINV=2.7V, VCTL1=0V, VCTL 2=0V) OIP3 (dBm) Pout 14 P-1dB(IN) 12 10 8 6 4 2 2.1 2.12 2.14 2.16 2.18 2.2 frequency (GHz) - 11 - NJG1122PB4 QELECTRICAL CHARACTERISTICS 7 (2.1GHz band Low Gain Mode) OIP3, IIP3 vs. VDD (f=2140+2140.1MHz, Pin=-20dBm, V INV=2.7V, VCTL 1=0V, VCTL2=0V) 3 11 -3 9 2 10 8 1 -5 7 -6 6 -7 5 NF 9 OIP3 0 8 -1 7 -2 -8 4 -3 5 -9 3 -4 4 2 -5 -10 2 2.5 3 3.5 4 4.5 5 3 2 2.5 3 3.5 18 4 16 3.5 14 3 VSWRi, VSWRo P-1dB(IN) (dBm) 5 (f=2140MHz, V INV=2.7V, VCTL1=0V, VCTL 2=0V) P-1dB(IN) 10 8 VSWRi VSWRo 2.5 2 1.5 6 1 4 0.5 0 2 2 2.5 3 3.5 4 4.5 5 IDD vs. VDD (PRF=OFF, VINV=2.7V, VCTL 1=0V, VCTL2=0V) 4 3.5 3 IDD 2.5 2 1.5 1 0.5 0 2 2.5 3 3.5 VDD (V) 2 2.5 3 3.5 VDD (V) VDD (V) IDD (uA) 4.5 VSWR vs. VDD P-1dB(IN) vs. VDD (f=2140MHz, V INV=2.7V, VCTL 1=0V, VCTL2=0V) 12 4 VDD (V) VDD (V) - 12 - 6 IIP3 4 4.5 5 4 4.5 5 IIP3 (dBm) Gain OIP3 (dBm) 10 NF (dB) -2 -4 Gain (dB) Gain, NF vs. VDD (f=2140MHz, V INV=2.7V, VCTL 1=0V, VCTL2=0V) NJG1122PB4 QELECTRICAL CHARACTERISTICS 8 (2.1GHz band Low Gain Mode) Gain, NF vs. Temperature OIP3, IIP3 vs. Temperature (f=2140MHz, V DD=VINV=2.7V, VCTL1=0V, VCTL2=0V) (f=2140+2140.1MHz, Pin=-20dBm, V DD=VINV=2.7V, VCTL1=0V, VCTL 2=0V) 10 -3 25 5 20 9 Gain 8 7 -6 6 -7 5 NF -8 OIP3 OIP3 (dBm) -5 NF (dB) -4 Gain (dB) 10 0 15 -5 10 -10 5 4 IIP3 -15 -9 0 3 -10 -50 0 2 100 50 -20 -50 o 0 -5 100 50 o Temperature ( C) Temperature ( C) VSWR vs. Temperature P-1dB(IN) vs. Temperature (f=2140MHz, V DD=VINV=2.7V, VCTL 1=0V, VCTL2=0V) (f=2140MHz, V DD=VINV=2.7V, VCTL1=0V, VCTL2=0V) 4 18 3.5 VSWRi, VSWRo 16 P-1dB(IN) (dBm) IIP3 (dBm) -2 14 P-1dB(IN) 12 10 8 VSWRi VSWRo 3 2.5 2 1.5 1 6 0.5 4 -50 0 50 Temperature (oC) 100 0 -50 0 50 Temperature (oC) 100 IDD vs. Temperature (PRF=OFF, VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V) 30 25 IDD (uA) 20 15 10 IDD 5 0 -50 0 50 Temperature (oC) 100 - 13 - NJG1122PB4 QELECTRICAL CHARACTERISTICS 9(2.1GHz band Low Gain Mode) - 14 - NJG1122PB4 QELECTRICAL CHARACTERISTICS 10(2.1GHz band Low Gain Mode ) k factor vs. frequency (VDD=VINV=2.7V, VCTL1=0V, VCTL 2=0V) 20 k factor 15 10 5 0 0 5 10 15 20 frequency (GHz) - 15 - NJG1122PB4 QELECTRICAL CHARACTERISTICS 11(800MHz band High Gain Mode) Pout vs. Pin Gain vs. Pin (f=885MHz, V DD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=1.85V) (f=885MHz, V DD=VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V) 10 20 5 18 Gain (dB) Pout (dBm) 0 Pout -5 -10 -15 14 12 10 8 P-1dB(IN)=-14.0dBm P-1dB(IN)=-14.0dBm -20 -25 -40 Gain 16 -30 -20 -10 0 6 4 -40 10 -30 -20 Pin (dBm) -10 0 10 Pin (dBm) NF vs. frequency Pout, IM3 vs. Pin (VDD=VINV=2.7V, VCTL 1=1.85V, VCTL2=1.85V) (f=885+885.1MHz, V DD=VINV=2.7V, VCTL 1=1.85V, VCTL2=1.85V) 4 20 3.5 Pout, IM3 (dBm) Noise Figure (dB) 0 3 2.5 2 NF 1.5 -20 -40 -60 1 IM3 -80 0.5 0 0.75 0.8 0.85 0.9 0.95 -100 -40 1 -10 0 10 P-1dB(IN) vs. frequency (VDD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=1.85V) -8 2 -10 1 13 0 12 -1 11 IIP3 -2 10 -3 9 -4 0.86 0.87 0.88 0.89 0.9 frequency (GHz) 0.91 -5 0.92 P-1dB(IN) (dBm) OIP3 3 IIP3 (dBm) OIP3 (dBm) -20 OIP3, IIP3 vs. frequency 15 8 0.85 -30 Pin (dBm) 16 14 IIP3=-2.7dBm frequency (GHz) (df=100kHz, Pin=-36dBm, VDD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=1.85V) - 16 - Pout -12 P-1dB(IN) -14 -16 -18 -20 -22 0.85 0.86 0.87 0.88 0.89 0.9 frequency (GHz) 0.91 0.92 NJG1122PB4 QELECTRICAL CHARACTERISTICS 12(800MHz band High Gain Mode) Gain, NF vs. VDD OIP3, IIP3 vs. VDD (f=885MHz, V INV=2.7V, VCTL1=1.85V, VCTL2=1.85V) (f=885+885.1MHz, Pin=-36dBm, V INV=2.7V, VCTL1=1.85V, VCTL2=1.85V) 4.5 16 3 17 4 15 2 3.5 14 15 3 14 2.5 13 2 NF 1.5 11 10 2.5 3 3.5 4 4.5 OIP3 1 13 0 12 -1 11 -2 IIP3 12 2 NF (dB) Gain (dB) Gain 10 -3 1 9 -4 0.5 8 5 -5 2 2.5 3 3.5 4 4.5 5 VDD (V) P-1dB(IN) vs. VDD VSWR vs. VDD (f=885MHz, V INV=2.7V, VCTL1=1.85V, VCTL2=1.85V) (f=885MHz, V INV=2.7V, VCTL1=1.85V, VCTL2=1.85V) -6 4 -8 3.5 -10 3 VSWRi, VSWRo P-1dB(IN) (dBm) VDD (V) -12 IIP3 (dBm) 16 OIP3 (dBm) 18 P-1dB(IN) -14 -16 VSWRi VSWRo 2.5 2 1.5 -18 1 -20 0.5 0 -22 2 2.5 3 3.5 4 4.5 5 2 2.5 3 3.5 4 4.5 5 VDD (V) VDD (V) IDD vs. VDD (PRF=OFF, VINV=2.7V, VCTL 1=1.85V, VCTL 2=1.85V) 5 4.5 IDD (mA) 4 3.5 3 IDD 2.5 2 1.5 1 2 2.5 3 3.5 4 4.5 5 VDD (V) - 17 - NJG1122PB4 QELECTRICAL CHARACTERISTICS 13(800MHz band High Gain Mode) Gain, NF vs. Temperature OIP3, IIP3 vs. Temperature (f=885MHz, V DD=VINV=2.7V, VCTL1=1.85V, VCTL 2=1.85V) 15 3 17 4 14 2 3.5 13 15 3 14 2.5 13 2 NF 12 11 1.5 0 50 12 0 11 -1 10 -2 9 1 10 -50 7 -50 Temperature ( C) P-1dB(IN) vs. Temperature 3.5 -10 3 VSWRi, VSWRo P-1dB(IN) (dBm) -8 P-1dB(IN) -14 -16 0.5 Temperature ( C) IDD vs. Temperature (PRF=OFF, VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V) 5 IDD (mA) 4 IDD 2 1 0 -50 - 18 - 0 50 Temperature (oC) 100 VSWRo 1.5 -20 100 VSWRi 2 1 3 -5 100 50 o 2.5 -18 50 0 VSWR vs. Temperature 4 o -4 (f=885MHz, V DD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=1.85V) -6 0 -3 Temperature ( C) (f=885MHz, V DD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=1.85V) -22 -50 IIP3 8 0.5 100 o -12 1 OIP3 0 -50 0 50 Temperature (oC) 100 IIP3 (dBm) Gain OIP3 (dBm) 4.5 NF (dB) 18 16 Gain (dB) (f=885+885.1MHz, Pin=-36dBm, V DD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=1.85V) NJG1122PB4 QELECTRICAL CHARACTERISTICS 14(800MHz band High Gain Mode) - 19 - NJG1122PB4 QELECTRICAL CHARACTERISTICS 15(800MHz band High Gain Mode ) k factor vs. frequency (VDD=VINV=2.7V, VCTL1=1.85V, VCTL 2=1.85V) 20 k factor 15 10 5 0 0 5 10 frequency (GHz) - 20 - 15 20 NJG1122PB4 Pout vs. Pin Gain vs. Pin (f=885MHz, V DD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=0V) (f=885MHz, V DD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=0V) 10 0 0 -2 -10 -4 Gain (dB) Pout (dBm) QELECTRICAL CHARACTERISTICS 16(800MHz band Low Gain Mode) Pout -20 -30 Gain -6 -8 -40 -10 P-1dB(IN)=+9.5dBm -50 -40 -30 -20 -10 0 10 P-1dB(IN)=+9.5dBm -12 -40 20 -30 -20 Pin (dBm) 0 10 20 NF vs. frequency Pout, IM3 vs. Pin (VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V) (f=885+885.1MHz, V DD=VINV=2.7V, VCTL 1=1.85V, VCTL2=0V) 20 9 8 0 7 Pout, IM3 (dBm) Noise Figure (dB) -10 Pin (dBm) NF 6 5 4 -20 Pout -40 -60 IM3 3 -80 IIP3=+4.2dBm 2 1 0.75 0.8 0.85 0.9 0.95 -100 -40 1 -30 -20 2 16 12 14 0 10 -2 8 -4 6 IIP3 -6 4 -8 2 0.88 0.89 0.9 frequency (GHz) 0.91 0 0.92 IIP3 (dBm) OIP3 (dBm) OIP3 0.87 10 (VDD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=0V) 14 P-1dB(IN) (dBm) 4 0.86 0 P-1dB(IN) vs. frequency OIP3, IIP3 vs. frequency (df=100kHz, Pin=-36dBm, VDD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=0V) -10 0.85 -10 Pin (dBm) frequency (GHz) 12 P-1dB(IN) 10 8 6 4 2 0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92 frequency (GHz) - 21 - NJG1122PB4 QELECTRICAL CHARACTERISTICS 17(800MHz band Low Gain Mode) OIP3, IIP3 vs. VDD (f=885+885.1MHz, Pin=-20dBm, V INV=2.7V, VCTL1=1.85V, VCTL2=0V) 2 10 -3 9 1 9 8 0 -5 7 -6 6 -7 5 NF OIP3 8 -1 7 -2 6 -3 -8 4 -4 4 -9 3 -5 3 -10 2 -6 2 2.5 3 3.5 4 4.5 5 2 2 2.5 3 3.5 VDD (V) 5 (f=885MHz, V INV=2.7V, VCTL 1=1.85V, VCTL2=0V) 18 4 16 3.5 14 3 VSWRi, VSWRo P-1dB(IN) (dBm) 4.5 VSWR vs. VDD P-1dB(IN) vs. VDD 12 P-1dB(IN) 10 8 VSWRi VSWRo 2.5 2 1.5 6 1 4 0.5 0 2 2 2.5 3 3.5 4 4.5 2 5 IDD vs. VDD (PRF=OFF, VINV=2.7V, VCTL 1=1.85V, VCTL 2=0V) 4 3.5 3 IDD 2.5 2 1.5 1 0.5 0 2 2.5 3 3.5 VDD (V) 4 4.5 2.5 3 3.5 VDD (V) VDD (V) IDD (uA) 4 VDD (V) (f=885MHz, V INV=2.7V, VCTL1=1.85V, VCTL2=0V) - 22 - 5 IIP3 5 4 4.5 5 IIP3 (dBm) Gain OIP3 (dBm) 10 NF (dB) -2 -4 Gain (dB) Gain, NF vs. VDD (f=885MHz, V INV=2.7V, VCTL1=1.85V, VCTL2=0V) NJG1122PB4 QELECTRICAL CHARACTERISTICS 18(800MHz band Low Gain Mode) OIP3, IIP3 vs. Temperature (f=885MHz, V DD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V) (f=885+885.1MHz, Pin=-20dBm, V DD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V) 11 -4 10 Gain 25 5 20 9 -7 7 -8 6 NF -9 -10 50 0 15 -5 10 -10 5 IIP3 5 4 0 OIP3 OIP3 (dBm) 8 NF (dB) -6 -11 -50 10 3 100 o -15 0 -20 -50 Temperature ( C) 0 -5 100 50 o Temperature ( C) VSWR vs. Temperature P-1dB(IN) vs. Temperature (f=885MHz, V DD=VINV=2.7V, VCTL1=1.85V, VCTL 2=0V) (f=885MHz, V DD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V) 4 16 3.5 VSWRi, VSWRo 14 P-1dB(IN) (dBm) IIP3 (dBm) -3 -5 Gain (dB) Gain, NF vs. Temperature 12 P-1dB(IN) 10 8 6 VSWRi VSWRo 3 2.5 2 1.5 1 4 0.5 2 -50 0 50 Temperature (oC) 100 0 -50 0 50 Temperature (oC) 100 IDD vs. Temperature (PRF=OFF, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V) 30 25 IDD (uA) 20 15 10 IDD 5 0 -50 0 50 Temperature (oC) 100 - 23 - NJG1122PB4 QELECTRICAL CHARACTERISTICS 19(800MHz band Low Gain Mode) - 24 - NJG1122PB4 QELECTRICAL CHARACTERISTICS 20(800MHz band Low Gain Mode) k factor vs. frequency (VDD=VINV=2.7V, VCTL 1=1.85V, VCTL 2=0V) 20 k factor 15 10 5 0 0 5 10 15 20 frequency (GHz) - 25 - NJG1122PB4 QTEST CIRCUIT (Top View) VCTL1=0V or 1.85V (Band Select) VINV=2.7V VINV 9 RF IN2 (2.1GHz) L6 4.3nH VCTL1 8 GND 7 RFIN2 RFOUT2 10 C3 20pF 6 L5 2.7nH 2.1GHz Band 11 L2 18nH GND VDD=2.7V 5 RFIN1 RFOUT1 12 C4 1000pF L3 18nH 4 800MHz Band L1 10nH GND 1 VCTL2 2 EXTCAP L4 33nH C1 6pF 3 C2 1000pF VCTL2=0V or 1.85V (RX ATT) 1 Pin INDEX PARTS LIST Parts ID Comment L1, L3~L5, L7 TAIYO-YUDEN (HK1005) L2, L6, L8 C1~C4 MURATA (LQW15A) MURATA (GRP15) *: Please use an appropriate inductor for L2, L6, L8 to improve Noise Figure. QTRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) Control voltage 800MHz band 2.1GHz band VCTL1 Band select VCTL2 RX ATT LNA IDD Bypass circuit LNA IDD Bypass circuit L L OFF ON OFF ON L H OFF OFF ON OFF H L OFF ON OFF ON H H ON OFF OFF OFF - 26 - RF OUT2 (2.1GHz) L7 1.8nH Logic Circuit GND RF IN1 (800MHz) L8 6.2nH RF OUT1 (800MHz) NJG1122PB4 QRECOMMENDED DESIGN (Top View) RF IN2 (2.1GHz) VCTL1 RF OUT2 (2.1GHz) VINV C3 L5 L7 L8 C4 L6 L3 RF IN1 (800MHz) L1 L2 L4 C1 C2 VDD VCTL2 RF OUT1 (800MHz) PCB (FR-4): t=0.2m MICROSTRIP LINE WIDTH=0.4mm (Z0=50) PCB SIZE=17.0mmx17.0mm - 27 - NJG1122PB4 QPACKAGE OUTLINE (FFP12-B4) 12pin 1pin INDEX (TOP VIEW) 0.25 1pin 2pin INDEX 0.125 0.750.15 2.00.1 0.30 0.17 35 0.20 0.50 0.103 0.303 0. (SIDE VIEW) (BOTTOM VIEW) 0.365 UNIT PCB OVER COAT TERMINAL TREAT WEIGHT : mm : Ceramic : Epoxy resin : Au : 10mg 0.27 2.00.1 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 28 - [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.