NJG1122PB4
- 1 -
Ver.2005-08-29
NJG1 122PB4
4
5
6
789
10
11
12
123
RFIN2
RFIN1
GND
RFOUT1
RFOUT2
GND
GND
GNDVINV
VCTL2
VCTL1
EXTCAP
Logic Circuit
2.1GHz B and
800MHz B and
W -CDMA Dual LNA GaAs MMIC
QGENERAL DESCRIPTION QPACKAGE OUTLINE
The NJG1 122PB4 is a Dual band LNA IC designed for W-CDMA
cellular phone of 2.1GHz and 800MHz band.
This IC has a LNA pass-through function to select high gain mode
or low gain mode.
An ultra small and ultra thin package of FFP12–B4 is adopted.
QFEATURES
OLow voltage operation +2.7V
OLow CTL voltage operation +1.85V
OLow current consumption 2.4mA typ. @2.1GHz band (High Gain Mode)
2.0mA typ. @800MHz band (High Gain Mode)
4uA typ. @800MHz / 2.1GHz band (Low Gain Mode)
OSmall package FFP12-B4 (Package size: 2.0 x 2.0 x 0.65mm typ)
[High gain mode]
OHigh gain 14.5dB typ. @fRF =2140MHz16.0dB typ. @fRF =885MHz
OLow noise figure 1.7dB typ. @fRF=2140MHz
1.45dB typ. @fRF =885MHz
OHigh Input IP3 -3.5dBm typ. @ fRF=2140.0+2140.1MHz, Pin=-36dBm
-3.5dBm typ. @fRF=885.0+885.1MHz, Pin=-36dBm
[Low gain mode]
OGain -4.0dB typ. @fRF=2140MHz
-4.5dB typ. @fRF=885MHz
OLow noise figure 4.0dB typ. @fRF=2140MHz
4.5dB typ. @fRF=885MHz
OHigh Input IP3 +2.5dBm typ. @fRF=2140.0+2140.1MHz, Pin=-20dBm
+2.0dBm typ. @fRF=885.0+885.1MHz, Pin=-20dBm
QPIN CONFIGURATION
Note: S pecifications and description listed in this catalog are subject to change without prior notice.
(Top View)
Pin Connection
1. GND
2. VCTL2
3. EXTCAP
4. RFOUT1 (800MHz band)
5. GND
6. RFOUT2 (2.1GHz band)
7. GND
8. VCTL1
9. VINV
10. RFIN2 (2.1GHz band)
11. GND
12. RFIN1 (800MHz band)
NJG1122PB4
- 2 -
QABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS SYMBOL CONDITIONS RATINGS UNITS
Operating volt age VDD 5.0 V
Inverter supply voltage VINV 5.0 V
Control voltage VCTL 5.0 V
Input power Pin VDD=2.7V +15 dBm
Power dissipation PD 300 mW
Operating temperature Topr -40~+85 °C
S torage temperature Tstg -55~+125 °C
QELECTRICAL CHARACTER ISTICS 1 (DC) (VDD=VINV=2.7V, Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating volt age VDD 2.5 2.7 4.5 V
Inverter supply voltage VINV 2.5 2.7 4.5 V
Control volt age1 (High) VCTL1(H) 1.44 1.85
VINV+0.3 V
Control volt age1 (Low) VCTL1(L) 0 0 0.8 V
Control voltage 2 (High) VCTL2(H) 1.44 1.85
VINV+0.3 V
Control voltage 2 (Low) VCTL2(L) 0 0 0.8 V
Operating current1
800MHz[High gain mode] IDD1 VCTL1=2.7V, VCTL2=1.85V - 2.4 2.9 mA
Operating current2
2.1GHz[High gain mode] IDD2 VCTL1=0V, VCTL2=1.85V - 2.0 2.4 mA
Operating current 3
800M/2.1GHz[Low gain mode] IDD3 VCTL1=0 or 1.85V, VCTL2=0V - 4 13 uA
Inverter current1 IINV1 RF OFF, VCTL=1.85V - 160 250 uA
Inverter current2 IINV2 RF OFF, VCTL=0V - 210 330 uA
Control current 1 ICTL1 VCTL1=1.85V - 14 35 uA
Control current 2 ICTL2 VCTL2=1.85V - 14 35 uA
NJG1122PB4
- 3 -
QELECTRICAL CHARACTER ISTICS 2 (2.1GHz band High Gain mode)
(VDD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V, fRF=2140MHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain1 Gain1 13.0 14.5 16.0 dB
Noise figure1 NF1 - 1.7 2.0 dB
Pin at 1dB gain
compression point1 P-1dB(1) -16.0 -14.0 - dBm
Input 3rd order
intercept point IIP3_1 f1=fRF, f2=fRF+100kHz,
Pin=-36dBm -6.0 -3.5 - dBm
RF Input VSWR1 VSWRI 1 - 1.7 2.2
RF Output VSWR1 VSWRo1 - 1.9 2.5
QELECTRICAL CHARACTERISTICS 3 (2.1GH z band Low Gain mode)
(VDD=VINV=2.7V, VCTL1=VCTL2=0V, fRF=2140MHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain2 Gain2 -6.0 -4.0 -2.5 dB
Noise figure2 NF2 - 4.0 6.0 dB
Pin at 1dB gain
compression point2 P-1dB(2) +5.0 +11.0 - dBm
Input 3rd order
intercept point2 IIP3_2 F1=fRF, f2=fRF+100kHz,
Pin=-36dBm 0 +2.5 - dBm
RF Input VSWR2 VSWRI 2 - 2.0 2.5
RF Output VSWR2 VSWRo2 - 1.6 2.0
NJG1122PB4
- 4 -
QELECTRICAL CHARACTER ISTICS 4 (800MHz band High Gain mode)
(VDD=VINV=2.7V, VCTL1=VCTL2=1.85V, fRF=885MHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain1 Gain3 14.5 16.0 17.5 dB
Noise figure1 NF3 - 1.45 1.75 dB
Pin at 1dB gain
compression point1 P-1dB(3) -17.0 -15.0 - dBm
Input 3rd order
intercept point IIP3_3 f1=fRF, f2=fRF+100kHz,
Pin=-36dBm -6.0 -3.5 - dBm
RF Input VSWR1 VSWRI 3 - 1.6 2.1
RF Output VSWR1 VSWRo3 - 1.7 2.3
QELECTRICAL CHARACTERISTICS 5 (800MHz band Low Gain mode)
(VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V, fRF=885MHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain2 Gain4 -6.0 -4.0 -3.0 dB
Noise figure2 NF4 - 4.5 6.5 dB
Pin at 1dB gain
compression point2 P-1dB(4) +4.0 +9.0 - dBm
Input 3rd order
intercept point2 IIP3_4 F1=fRF, f2=fRF+100kHz,
Pin=-36dBm 1.5 +2.0 - dBm
RF Input VSWR2 VSWRI 4 - 1.7 2.3
RF Output VSWR2 VSWRo4 - 1.6 2.1
NJG1122PB4
- 5 -
QTERMINAL INFORMATION
No. SYMBOL DESCRIPTION
1 GND Ground terminal. (0V)
2 VCTL2
Control voltage supply terminal. The high level voltage of this terminal selects High Gain
Mode. The low level voltage of this terminal selects Low Gain Mode.
3 EXTCAP An external bypass capacitor is required. (Please refer to TEST CIRCUIT.)
4 RFOUT1
Output terminal of 800MHz band. This terminal is also the power supply terminal of the
LNA, please use inductor (L3) to conne ct power supply.
5 GND Ground terminal. (0V)
6 RFOUT2
Output terminal of 2.1GHz band. This terminal is also the power supply terminal of the
LNA, please use inductor (L7) to conne ct power supply.
7 GND Ground terminal. (0V)
8 VCTL1
Control voltage supply terminal. The high level voltage of this terminal selects
800MHz.band. The low level voltage of this terminal selects 2.1GHz band.
9 VINV Inverter voltage supplies terminal.
10 RFIN2
RF input terminal of 2.1GHz band. The RF signal is input through external matching circuit
connected to this terminal. The DC blocking capacitor is not required.
11 GND Ground terminal. (0V)
12 RFIN1
RF input terminal of 800MHz band. The RF signal is input through external matching
circuit connected to this terminal. The DC blocking capacitor is not required.
CAUTION
1) Ground terminal (No.1, 5, 7, 1 1) should be connected to the ground plane as low inductance as possible.
NJG1122PB4
- 6 -
QELECTRICAL CHARACTERISTICS 1 (2.1GHz band High Gain Mode)
-30
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-14.0dBm
Pout
Pout vs. Pin
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
2
4
6
8
10
12
14
16
18
-40 -30 -20 -10 0 10
Gain (dB)
Pin (dBm)
P-1dB(IN)=-14.0dBm
Gain
Gain vs. Pin
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 (dBm)
Pin (dBm)
IIP3=-3.3dBm
Pout
IM3
Pou t, I M 3 vs . P i n
(f= 2140+2140.1MHz, VDD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
6
7
8
9
10
11
12
13
14
-6
-5
-4
-3
-2
-1
0
1
2
2.1 2.122.142.162.18 2.2
OIP3 (dBm)
IIP3 (dBm)
frequency (GHz)
OIP3
IIP3
OIP3, IIP3 vs . frequency
(df=100kHz, Pin=-36dBm, VDD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
-22
-20
-18
-16
-14
-12
-10
-8
2.1 2.12 2.14 2.16 2.18 2.2
P-1dB(IN) (dBm)
frequency (GHz)
P-1dB(IN)
P-1dB(IN) vs. frequency
(VDD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
0
0.5
1
1.5
2
2.5
3
3.5
4
2 2.05 2.1 2.15 2.2 2.25 2.3
Noise Figure (dB)
frequency (GHz)
NF
NF vs. fr equency
(VDD=VINV=2.7V, VCTL1=0V, V CTL2=1.85V)
NJG1122PB4
- 7 -
QELECTRICAL CHARACTERISTICS 2 (2.1GHz band High Gain Mode)
9
10
11
12
13
14
15
16
17
0.5
1
1.5
2
2.5
3
3.5
4
4.5
22.533.544.55
Gain, NF vs. VDD
Gain (dB)
NF (dB)
VDD (V)
Gain
NF
(f=2140MHz, VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
5
6
7
8
9
10
11
12
13
-5
-4
-3
-2
-1
0
1
2
3
22.533.544.55
OIP3 , IIP3 vs. VDD
OIP3 (dBm)
IIP3 (dBm)
VDD (V)
OIP3
IIP3
(f=2140+2140.1MHz, Pin=-36dBm , VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
-22
-20
-18
-16
-14
-12
-10
-8
-6
22.533.544.55
P-1dB(IN) vs. VDD
P-1dB(IN) (dBm)
VDD (V )
P-1dB(IN)
(f=2140MHz, VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
VSWR vs. VDD
VSWRi
VSWRo
VSWRi, VSWRo
VDD (V )
(f=214 0MHz, VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
IDD vs. VDD
IDD (mA)
VDD (V)
IDD
(PRF=OFF, VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
NJG1122PB4
- 8 -
QELECTRICAL CHARACTERISTICS 3 (2.1GHz band High Gain Mode)
5
6
7
8
9
10
11
12
13
-5
-4
-3
-2
-1
0
1
2
3
-50 0 50 100
OIP3, IIP3 v s. Tem p erat ure
OIP3 (dBm)
IIP3 (dBm)
Temperature (oC)
OIP3
IIP3
(f=2140+2140.1MHz, Pin=-36dBm, VDD=VINV=2.7V, VCTL1=0V, V CTL2=1.85V)
-22
-20
-18
-16
-14
-12
-10
-8
-6
-50 0 50 100
P-1dB(IN) vs. Temperature
P-1dB(IN) (dBm)
Temperature (oC)
P-1dB(IN)
(f=214 0 MH z , VDD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
0
1
2
3
4
5
-50 0 50 100
IDD vs. Temperature
IDD (mA)
Temperature (oC)
IDD
(PRF=OFF, VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
VSWR vs. Temperature
VSWRi
VSWRo
VSWRi, VSWRo
Tem p era t u re ( oC)
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0 V, V CTL2=1.85V)
9
10
11
12
13
14
15
16
17
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50 0 50 100
Gain, NF vs. Temperature
Gain (dB)
NF (dB)
Temperature (oC)
Gain
NF
(f=214 0 MH z , VDD=VINV=2.7V, VCTL1=0V, VCTL2=1.85V)
NJG1122PB4
- 9 -
QELECTRICAL CHARACTERISTICS 4 (2.1GHz band High Gain Mode)
NJG1122PB4
- 10 -
QELECTRICAL CHARACTERISTICS 5 (2.1GHz band High Gain Mode)
0
5
10
15
20
0 5 10 15 20
k factor
frequency (GHz)
k factor vs. frequ e ncy
(VDD=VINV=2.7 V , VCTL1=0V, VCTL2=1.85V)
NJG1122PB4
- 11 -
QELECTRICAL CHARACTERISTICS 6 (2.1GH z band Low Gain Mode)
-12
-10
-8
-6
-4
-2
0
-40 -30 -20 -10 0 10 20
Gain (dB)
Pin (dBm)
P-1dB(IN)=+11.4dBm
Gain
Gain vs. Pin
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
-50
-40
-30
-20
-10
0
10
-40 -30 -20 -10 0 10 20
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+11.4dBm
Pout
Pout vs. Pin
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 (dBm)
Pin (dBm)
IIP3=+5.3dBm
Pout
IM3
Pout, I M 3 vs. Pin
(f=2140+2140.1MHz, VDD=VINV=2.7V, VCTL1=0 V, V CTL2=0V)
1
2
3
4
5
6
7
8
9
2 2.05 2.1 2.15 2.2 2.25 2.3
Noise Figure (dB)
frequency (GHz)
NF
NF vs. fr equency
(VDD=VINV=2 .7V, VCTL1=0V, VCTL2=0V)
2
4
6
8
10
12
14
16
18
2.1 2.12 2.14 2.16 2.18 2.2
P-1dB(IN) (dBm)
frequency (GHz)
P-1dB(IN)
P-1dB(IN) vs. frequency
(VDD=VINV=2 .7V, VCTL1=0V, VCTL2=0V)
-10
-8
-6
-4
-2
0
2
4
2
4
6
8
10
12
14
16
2.1 2.122.142.162.18 2.2
OIP3 (dBm)
IIP3 (dBm)
frequency (GHz)
OIP3
IIP3
OIP3, IIP3 vs. frequency
(df=100kHz, Pin=-36dBm, VDD=VINV=2.7V, VCTL1=0 V , V CTL2=0V)
NJG1122PB4
- 12 -
QELECTRICAL CHARACTERISTICS 7 (2.1GH z band Low Gain Mode)
-10
-9
-8
-7
-6
-5
-4
-3
-2
2
3
4
5
6
7
8
9
10
22.533.544.55
Gain, NF vs. VDD
Gain (dB)
NF (dB)
VDD (V)
Gain
NF
(f=2140MHz, VINV=2.7V, VCTL1=0V, VCTL2=0V)
-5
-4
-3
-2
-1
0
1
2
3
3
4
5
6
7
8
9
10
11
22.533.544.55
OIP3 , IIP3 vs. VDD
OIP3 (dBm)
IIP3 (dBm)
VDD (V)
OIP3
IIP3
(f= 2 14 0 +2140.1MHz, Pin =-20dBm, VINV=2.7V, VCTL1=0V, VCTL2=0V)
2
4
6
8
10
12
14
16
18
22.533.544.55
P-1dB(IN) vs. VDD
P-1dB(IN) (dBm)
VDD (V )
P-1dB(IN)
(f=2140MHz, VINV=2.7V, VCTL1=0V, VCTL2=0V)
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
VSWR vs. VDD
VSWRi
VSWRo
VSWRi, VSWRo
VDD (V)
(f=2140MHz, VINV=2.7V, VCTL1=0V, VCTL2=0V)
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
IDD vs. VDD
IDD (uA)
VDD (V)
IDD
(PRF=OFF, VINV=2.7V, VCTL1=0V, VCTL2=0V)
NJG1122PB4
- 13 -
QELECTRICAL CHARACTERISTICS 8 (2.1GH z band Low Gain Mode)
-20
-15
-10
-5
0
5
10
-5
0
5
10
15
20
25
-50 0 50 100
OIP3, IIP3 vs. Temperature
OIP3 (dBm)
IIP3 (dBm)
Temperature (oC)
OIP3
IIP3
(f=2140+ 21 40.1MHz , P i n=-20d Bm, VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
4
6
8
10
12
14
16
18
-50 0 50 100
P-1dB(IN) vs. Temperatur e
P-1dB(IN) (dBm)
Temperature (oC)
P-1dB(IN)
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
0
5
10
15
20
25
30
-50 0 50 100
IDD vs. Temperatu re
IDD (uA)
Temperature (oC)
IDD
(PRF=OFF, VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
VSWR vs. Temperature
VSWRi
VSWRo
VSWRi, VSWRo
Temperature (oC)
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
-10
-9
-8
-7
-6
-5
-4
-3
-2
2
3
4
5
6
7
8
9
10
-50 0 50 100
Gain, NF vs. Temperature
Gain (dB)
NF (dB)
Temperature (oC)
Gain
NF
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
NJG1122PB4
- 14 -
QELECTRICAL CHARACTERISTICS 9(2 .1GHz band Low Gain Mode)
NJG1122PB4
- 15 -
QELECTRICAL CHARACTER ISTICS 10(2.1GHz band Low Gain Mode )
0
5
10
15
20
0 5 10 15 20
k factor
frequency (GHz)
k factor vs. f requency
(VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
NJG1122PB4
- 16 -
QELECTRICAL CHARACTER ISTICS 1 1(800MHz band High Gain Mode)
4
6
8
10
12
14
16
18
20
-40 -30 -20 -10 0 10
Gain (dB)
Pin (dBm)
P-1dB(IN)=-14.0dBm
Gain
Gain vs. Pin
(f=885MHz, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-14.0dBm
Pout
Pout vs. Pin
(f=885MHz, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 (dBm)
Pin (dBm)
IIP3=-2.7dBm
Pout
IM3
Pout, I M3 vs. Pin
(f=885+885.1MHz, VDD=VINV=2 .7 V, VCTL1=1.85V, VCTL2=1.85V)
0
0.5
1
1.5
2
2.5
3
3.5
4
0.75 0.8 0.85 0.9 0.95 1
Noise Figure (dB)
frequency (GHz)
NF
NF vs. frequency
(VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
-22
-20
-18
-16
-14
-12
-10
-8
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92
P-1dB(IN) (dBm)
frequency (GHz)
P-1dB(IN)
P-1dB(IN) vs. frequency
(VDD=VINV=2.7V, VCTL1=1 .8 5V, VCTL2=1.85V)
8
9
10
11
12
13
14
15
16
-5
-4
-3
-2
-1
0
1
2
3
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92
OIP3 (dBm)
IIP3 (d Bm)
frequency (GHz)
OIP3
IIP3
OIP3, IIP3 vs . frequency
(df=100kHz, Pin=-36dBm, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
NJG1122PB4
- 17 -
QELECTRICAL CHARACTER ISTICS 12(800MHz band High Gain Mode)
10
11
12
13
14
15
16
17
18
0.5
1
1.5
2
2.5
3
3.5
4
4.5
22.533.544.55
Gain, NF vs. VDD
Gain (dB)
NF (dB)
VDD (V)
Gain
NF
(f=885MHz, VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
8
9
10
11
12
13
14
15
16
-5
-4
-3
-2
-1
0
1
2
3
22.533.544.55
OIP3 , IIP3 vs. VDD
OIP3 (d Bm)
IIP3 (dBm)
VDD (V)
OIP3
IIP3
(f= 8 8 5+885.1MHz, Pin = - 36dBm, VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
VSWR vs. VDD
VSWRi
VSWRo
VSWRi, VSWRo
VDD (V)
(f=885MHz, VINV=2.7V , VCTL1=1.85V, VCTL2=1.85V)
-22
-20
-18
-16
-14
-12
-10
-8
-6
22.533.544.55
P-1dB(IN) vs. VDD
P-1dB(IN) (dBm)
VDD (V )
P-1dB(IN)
(f=885MHz, VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
1
1.5
2
2.5
3
3.5
4
4.5
5
22.533.544.55
IDD vs. VDD
IDD (mA)
VDD (V )
IDD
(PRF=OFF, V INV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
NJG1122PB4
- 18 -
QELECTRICAL CHARACTER ISTICS 13(800MHz band High Gain Mode)
7
8
9
10
11
12
13
14
15
-5
-4
-3
-2
-1
0
1
2
3
-50 0 50 100
OIP3, IIP3 v s. Tem p erat ure
OIP3 (d Bm)
IIP3 (dBm)
Temperature (oC)
OIP3
IIP3
(f=885+885.1MHz, Pin=-36d Bm, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
-22
-20
-18
-16
-14
-12
-10
-8
-6
-50 0 50 100
P-1dB(IN) vs. Temperatur e
P-1dB(IN) (dBm)
Temperature (oC)
P-1dB(IN)
(f=885MHz, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
0
1
2
3
4
5
-50 0 50 100
IDD vs. Temperatu re
IDD (mA)
Temperature (oC)
IDD
(PRF=OFF, VINV=2 .7V, VCTL1=1.85V, VCTL2=1.85V)
10
11
12
13
14
15
16
17
18
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50 0 50 100
Gain, NF vs. Temperature
Gain (dB)
NF (dB)
Temperature (oC)
Gain
NF
(f=885MHz, VDD=VINV=2.7 V, VCTL1=1.85V, VCTL2=1.85V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
VSWR vs. Temperature
VSWRi
VSWRo
VSWRi, VSWRo
Tem p era t u re ( oC)
(f=885MHz, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=1.85V)
NJG1122PB4
- 19 -
QELECTRICAL CHARACTER ISTICS 14(800MHz band High Gain Mode)
NJG1122PB4
- 20 -
QELECTRICAL CHARACTER ISTICS 15(800MHz band High Gain Mode )
0
5
10
15
20
0 5 10 15 20
k factor
frequency (GHz)
k factor vs. frequency
(VDD=VINV=2.7V, VCTL1=1.85V, V CTL2=1.85V)
NJG1122PB4
- 21 -
QELECTRICAL CHARACTER ISTICS 16(800MHz band Low Gain Mode)
-12
-10
-8
-6
-4
-2
0
-40 -30 -20 -10 0 10 20
Gain (dB)
Pin (dBm)
P-1dB(IN)=+9.5dBm
Gain
Gain vs. Pin
(f=885MHz, VDD=VINV=2.7V, VCTL1=1.8 5V, VCTL2=0V)
-50
-40
-30
-20
-10
0
10
-40 -30 -20 -10 0 10 20
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+9.5dBm
Pout
Pout vs. Pin
(f=885MHz, VDD=VINV=2.7V, VCTL1=1.8 5V, VCTL2=0V)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 (dBm)
Pin (dBm)
IIP3=+4.2dBm
Pout
IM3
Pou t, I M 3 vs . P i n
(f=885+885.1MHz, VDD=VINV=2.7V , VCTL1=1.85V, VCTL2=0V)
1
2
3
4
5
6
7
8
9
0.75 0.8 0.85 0.9 0.95 1
Noise Figure (dB)
frequency (GHz)
NF
NF vs. f requency
(VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
2
4
6
8
10
12
14
16
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92
P-1dB(IN) (dBm)
frequency (GHz)
P-1dB(IN)
P-1dB(IN) vs. frequency
(VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
-10
-8
-6
-4
-2
0
2
4
0
2
4
6
8
10
12
14
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92
OIP3 (dBm)
IIP3 (dBm)
frequency (GHz)
OIP3
IIP3
OIP3, IIP3 vs. frequency
(df=100kHz, Pin=- 36d Bm, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
NJG1122PB4
- 22 -
QELECTRICAL CHARACTER ISTICS 17(800MHz band Low Gain Mode)
-10
-9
-8
-7
-6
-5
-4
-3
-2
2
3
4
5
6
7
8
9
10
22.533.544.55
Gain, NF vs. VDD
Gain (dB)
NF (dB)
VDD (V)
Gain
NF
(f=885MHz, VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
-6
-5
-4
-3
-2
-1
0
1
2
2
3
4
5
6
7
8
9
10
22.533.544.55
OIP 3 , IIP 3 vs . VDD
OIP3 (d Bm)
IIP3 (dBm)
VDD (V)
OIP3
IIP3
(f=885+885.1MHz, Pin=-20dBm, VINV=2.7V, VCTL1=1 .8 5V, VCTL2=0V)
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
VSWR vs. VDD
VSWRi
VSWRo
VSWRi, VSWRo
VDD (V)
(f=885MHz, VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
2
4
6
8
10
12
14
16
18
22.533.544.55
P-1dB(IN) vs. VDD
P-1dB(IN) (dBm)
VDD (V)
P-1dB(IN)
(f=885MHz, VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
0
0.5
1
1.5
2
2.5
3
3.5
4
22.533.544.55
IDD vs. VDD
IDD (uA)
VDD (V )
IDD
(PRF=OFF, VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
NJG1122PB4
- 23 -
QELECTRICAL CHARACTER ISTICS 18(800MHz band Low Gain Mode)
-20
-15
-10
-5
0
5
10
-5
0
5
10
15
20
25
-50 0 50 100
OIP3, IIP3 v s. Tem p erat ure
OIP3 (dBm)
IIP3 (dBm)
Tem p era t u re ( oC)
OIP3
IIP3
(f=885+885.1MHz, Pin=-20dBm, VDD=VINV=2.7V , VCTL1=1.85V, VCTL2=0V)
2
4
6
8
10
12
14
16
-50 0 50 100
P-1dB(IN) vs. Temperatur e
P-1dB(IN) (dBm)
Temperature (oC)
P-1dB(IN)
(f=885MHz, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
0
5
10
15
20
25
30
-50 0 50 100
IDD vs. Temperatu re
IDD (uA)
Temperature (oC)
IDD
(PRF=OFF, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
-11
-10
-9
-8
-7
-6
-5
-4
-3
3
4
5
6
7
8
9
10
11
-50 0 50 100
Gain, NF vs. Temperature
Gain (dB)
NF (dB)
Temperature (oC)
Gain
NF
(f=885MHz, VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
VSWR vs. Temperature
VSWRi
VSWRo
VSWRi, VSWRo
Temperature (oC)
(f=885MHz, VDD=VINV=2.7 V, VCTL1=1.85V, VCTL2=0V)
NJG1122PB4
- 24 -
QELECTRICAL CHARACTER ISTICS 19(800MHz band Low Gain Mode)
NJG1122PB4
- 25 -
QELECTRICAL CHARACTER ISTICS 20(800MHz band Low Gain Mode)
0
5
10
15
20
0 5 10 15 20
k factor
frequency (GHz)
k factor vs. fr equency
(VDD=VINV=2.7V, VCTL1=1.85V, VCTL2=0V)
NJG1122PB4
- 26 -
RF IN1
(800MHz)
RF IN2
(2.1GHz)
RF OUT1
(800MHz)
RF OUT2
(2.1GHz)
VCTL2=0V or 1.85V
(RX ATT)
VINV=2.7V
VDD=2.7V
VCTL1=0V or 1.85V
(Band Select)
4
5
6
789
10
11
12
123
RFIN2
RFIN1
GND
RFOUT1
RFOUT2
GND
GND
GNDVINV
VCTL2
VCTL1
EXTCAP
Logic Circuit
2. 1GHz B and
800M Hz Band
QTEST CIRCUIT
P ARTS LIST
*: Please use an appropriate inductor for L2, L6, L8 to improve Noise Figure.
QTRUTH TABLE “H”=VCTL(H), “L”=VCTL(L)
Parts ID Comment
L1, L3~L5, L7 TAIYO-YUDEN (HK1005)
L2, L6, L8 MURATA (LQW15A)
C1~C4 MURATA (GRP15)
Control volt age 800MHz band 2.1GHz band
VCTL1
Band select VCTL2
RX ATT LNA IDD Bypass circuit LNA IDD Bypass circuit
L L OFF ON OFF ON
L H OFF OFF ON OFF
H L OFF ON OFF ON
H H ON OFF OFF OFF
(Top V iew)
L1
10nH
L2
18nH
L3
18nH
L4
33nH
L7
1.8nH
L8
6.2nH
C1
6pF
C2
1000pF
C3
20pF
C4
1000pF
1 Pin INDEX
L
5
2.7nH
L
6
4.3nH
NJG1122PB4
- 27 -
QRECOMMENDED DESIGN
PCB (FR-4): t=0.2m
MICROSTRIP LINE WIDTH=0.4mm (Z0=50Ω)
PCB SIZE=17.0mmx17.0mm
VDD
VINV
VCTL1
VCTL2
RF IN1
(800MHz)
RF OUT1
(800MHz)
RF IN2
(2.1GHz)
RF OUT2
(2.1GHz)
L1 L2
L3
L4
L5
L6
L7
L8
C1
C3
C4
(Top View)
C2
NJG1122PB4
- 28 -
QPACKAGE OUTLINE (FFP12-B4)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• T
o
waste this
p
roduct,
p
lease obe
y
the relatin
g
law of
y
ou
r
countr
y
.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoi
d
these dama
g
es.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
0.75±0.15
0.103
0.303
0.50
0.365 0.27
2.0±0.1
0.30
0.20
2pin INDEX
1pin INDEX
0.17
0.125
0.25
(TOP VIEW)
(BOTTOM VIEW)
(SIDE VIEW)
12pin
1pin
2.0±0.1
0.35
UNIT : mm
PCB : Ceramic
OVER COAT : Epoxy resin
TERMINAL TREA T : Au
WEIGHT : 10mg
