RB751V-40
200mW, Low VFSMD Schottky Barrier Diod
e
Small Signal Diode
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min Max Min Max
Case : SOD-323 small outline plastic package 1.20 1.40 0.047 0.055
2.50 2.80 0.098 0.106
0.25 0.35 0.010 0.014
1.60 1.80 0.063 0.071
0.80 0.90 0.031 0.035
0.08 0.15 0.003 0.006
Package Part No. Packing Su
gg
ested PAD La
y
ou
t
SOD-323 RB751V-40 RR 3K / 7" Reel
SOD-323 RB751V-40 RRG 3K / 7" Reel
Maximum Ratings and Electrical Characteristics
Maximum Ratings Value Units
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
IO
IFSM
TJ, TSTG
200 mW
V
Unit (inch)
5
0.19 REF
A
B
Ordering Information
Polarity : Indicated by cathode band
Marking
5
Weight :0.004 gram (approximately)
Junction and Storage Temperature Range
PD
VRRM
Thermal Resistance (Junction to Ambient) (Note 2)
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current @ TL=100°C (Lead Temperature)
RθJA
Rating at 25°C ambient temperature unless otherwise specified.
SOD-323
Pin Configuration
C
D
E
F
G 0.475 REF
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Low power loss, high current capability, low VF
Marking Code : 5
Features
Mechanical Data
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
High temperature soldering guaranteed: 260°C/10s
Dimensions Unit (mm)
Non-Repetitive Peak Forward Surge Current (Note 1)
VR
Type Number
Power Dissipation
Symbol
V
40
30
mA
A
°C/W
°C
30
0.2
500
-45~125
1.60
0.063
0.113
2.86
0.83
0.033
0.63
0.025
Version : B10
RB751V-40
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Electrical Characteristics
IF=
VR=
Junction Capacitance
Tape & Reel specification
-
2
0.37
CJ
UnitsMaxType Number
V
pF
1.0mA
30V uA
Symbol Min
3.73 ± 0.10
Forward Voltage
-Reverse Leakage Current IR
VR=0V, f=1.0MHz
0.5
VF
Feed hole width D2 13.0 ± 0.20
Item Symbol Dimension(mm)
Carrier depth C 1.68 ±0.10
1.7 ± 0.10
D1 55 Min
Sprocket hole 1.5 ± 0.1
4.00 ±0.10
178 ± 1
Carrier width A
Reel outside diameter D
d
Carrier length B
Reel inner diameter
8.00 ±0.20
E 1.75 ±0.10
Punch hole position F 3.50 ±0.05
Sprocke hole pitch
Embossment center
Sprocke hole position
P0
Reel width W1 14.4 Max
P1 2.00 ±0.05
Overall tape thickness T 0.23 ± 0.05
Tape width W
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
W1
D1D2
D
T
C
dP1 P0
A
B
F
W
E
Version : B10
RB751V-40
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Rating and Sharacteristic Curves
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
IF Forward Current (mA)
FIG 3 Admissible Power Dissipation Curve
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140
Power Dissipation (mW)
VF Forward Voltage (V)
Ambient Tempeatature (oC) Reverse Voltage (V)
FIG 4 Typical Junction Capacitance
0
1
2
3
4
5
0 5 10 15 20 25
Junction Capacitance(pF)
FIG 1 Typical Forward Characteristics
0
0.08
0.16
0.24
0.32
0.4
0 25 50 75 100 125 150
Io mean forward current (A)
FIG 2 Forward Current Derating Curve
Terminal Temperature (°C)
Ta=25oC
Version : B10
