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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors PART NUMBER designed for high current switching applications. FEATURES PACKAGE 2SK3225 TO-251 (MP-3) 2SK3225-Z TO-252 (MP-3Z) * Low on-state resistance RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 m MAX. (VGS = 4.0 V, ID = 17 A) * Low input capacitance Ciss = 2100 pF TYP. * Built-in gate protection diode (TO-251) * TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) 20 V Gate to Source Voltage VGSS(DC) +20, -10 V Drain Current (DC) ID(DC) 34 A ID(pulse) 136 A 40 W Drain Current (Pulse) Note1 Total Power Dissipation (TC = 25C) PT1 Total Power Dissipation (TA = 25C) PT2 1.0 W Channel Temperature Tch 150 C Tstg -55 to +150 C Single Avalanche Current Note2 IAS 15 A Single Avalanche Energy Note2 EAS 22 mJ Storage Temperature (TO-252) Note1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V . The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D13798EJ5V0DS00 (5th edition) Date Published November 2006 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 1999, 2000 2SK3225 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 A Gate to Source Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V | yfs | VDS = 10 V, ID = 17 A 13 27 RDS(on)1 VGS = 10 V, ID = 17 A 13 18 m RDS(on)2 VGS = 4.0 V, ID = 17 A 18 27 m Input Capacitance Ciss VDS = 10 V 2100 pF Output Capacitance Coss VGS = 0 V 550 pF Reverse Transfer Capacitance Crss f = 1 MHz 220 pF Turn-on Delay Time td(on) ID = 17 A 32 ns Rise Time tr VGS = 10 V 300 ns Turn-off Delay Time td(off) VDD = 30 V 110 ns Fall Time tf RG = 10 140 ns Total Gate Charge QG ID = 34 A 45 nC Gate to Source Charge QGS VDD = 48 V 7 nC QGD VGS = 10 V 13 nC VF(S-D) IF = 34 A, VGS = 0 V 0.94 V Reverse Recovery Time trr If = 34 A, VGS = 0 V 60 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 95 nC Forward Transfer Admittance Note Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note S Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 D.U.T. L RL PG. 50 VDD VGS = 20 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 VDD 10% 0 10% Wave Form VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D13798EJ5V0DS td(on) tr ton td(off) tf toff 2SK3225 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 20 40 60 80 60 50 40 30 20 10 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 Pw ID - Drain Current - A ID(pulse) 100 d ite ) im 0 V )L 1 n = o ID(DC) S S( RD t VG (a =1 10 0 s 1m 0 s s 10 10 ms DC 1 TC = 25C 0.1 Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1000 Rth(ch-A) = 125 C/W 100 10 Rth(ch-C) = 3.13 C/W 1 0.1 0.01 0.001 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13798EJ5V0DS 3 2SK3225 FORWARD TRANSFER CHARACTERISTICS 1000 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed Pulsed 100 ID - Drain Current - A ID - Drain Current - A 200 TA = -50C 25C 75C 150C 10 1 160 120 VGS = 10 V 80 4.0 V 40 0.1 0 1 2 3 4 5 0 6 10 TA = 150C 75C 25C -50C 1 VDS = 10 V Pulsed 10 100 RDS(on) - Drain to Source On-state Resistance - m | yfs | - Forward Transfer Admittance - S 100 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed ID = 17 A 20 10 0 5 Pulsed VGS = 4.0 V 10 V 10 0 1 10 100 15 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1000 VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - m 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 10 VGS - Gate to Source Voltage - V ID - Drain Current - A 30 4 3 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.1 0.1 2 1 0 VGS - Gate to Source Voltage - V VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 ID - Drain Current - A 0 -50 0 50 100 Tch - Channel Temperature - C Data Sheet D13798EJ5V0DS 150 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 40 ISD - Diode Forward Current - A VGS = 4.0 V 30 20 10 V 10 0 ID = 17 A -50 0 50 100 Pulsed 100 VGS = 10 V 0V 10 1 0.1 0 150 Tch - Channel Temperature - C 1000 Coss Crss 100 1 10 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz Ciss 10 0.1 1000 tf td(off) 100 td(on) 10 tr VDD = 30 V VGS = 10 V RG = 10 1 0.1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 10 10 100 80 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A /s VGS = 0 V 1 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 1 VDS - Drain to Source Voltage - V 1000 1.5 SWITCHING CHARACTERISTICS CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 1.0 0.5 VSD - Source to Drain Voltage - V ID = 34 A VGS = 10 V 60 16 14 12 VDD = 48 V 30 V 12 V VGS 10 8 40 6 4 20 2 VDS 0 IF - Drain Current - A 20 40 60 80 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m 2SK3225 0 QG - Gate Charge - nC Data Sheet D13798EJ5V0DS 5 2SK3225 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 IAS = 15 A 10 EAS =2 2m J 1.0 RG = 25 VDD = 30 V VGS = 20 0 V 0.1 Starting Tch = 25C 10 100 120 100 80 60 40 20 1m 10 m L - Inductive Load - H 6 VDD = 30 V RG = 25 VGS = 20 0 V IAS 15 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C Data Sheet D13798EJ5V0DS 2SK3225 PACKAGE DRAWINGS (Unit : mm) 1)TO-251 (MP-3) <R> 2)TO-252 (MP-3Z) +0.2 0.5-0.1 1.0 0.5 0.4 MIN. 0.5 TYP. 2.5 0.5 2.3 0.2 0.5 0.1 Note 0.5 0.1 +0.2 0.5-0.1 0.5 0.1 2.3 0.3 2.3 2.3 0.75 1 2 3 Note 5.6 0.3 5.5 0.2 1.10.2 4 13.7 MIN. 3 7.0 MIN. 2 4.4 0.2 1.5 -0.1 +0.2 5.0 0.2 5.50.2 1.60.2 1 +0.2 6.5 0.2 0.50.1 4 9.5 0.5 5.00.2 2.30.2 1.5-0.1 6.50.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.3 0.3 0.15 0.15 1. Gate 2. Drain 3. Source 4. Fin (Drain) Note The depth of notch at the top of the fin is from 0 to 0.2 mm. EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13798EJ5V0DS 7 2SK3225 * The information in this document is current as of November, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1