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MOS FIELD EFFECT TRANSISTOR
2SK3225
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D13798EJ5V0DS00 (5th edition)
Date Published November 2006 NS CP(K)
Printed in Japan
1999, 2000
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK3225 is N-Channel MOS Field Effect Transistors
designed for high current switching applications.
FEATURES
• Low on-state resistance
R
DS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A)
R
DS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A)
• Low input capacitance
Ciss = 2100 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, −10 V
Drain Current (DC) ID(DC) ±34 A
Drain Current (Pulse) Note1 ID(pulse) ±136 A
Total Power Dissipation (TC = 25°C) PT1 40 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 15 A
Single Avalanche Energy Note2 EAS 22 mJ
Note1. PW ≤ 10
μ
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3225 TO-251 (MP-3)
2SK3225-Z TO-252 (MP-3Z)
(TO-251)
(TO-252)
Data Sheet D13798EJ5V0DS
2
2SK3225
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10
μ
A
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V
Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 17 A 13 27 S
Drain to Source On-state Resistance Note RDS(on)1 VGS = 10 V, ID = 17 A 13 18 mΩ
RDS(on)2 VGS = 4.0 V, ID = 17 A 18 27 mΩ
Input Capacitance Ciss VDS = 10 V 2100 pF
Output Capacitance Coss VGS = 0 V 550 pF
Reverse Transfer Capacitance Crss f = 1 MHz 220 pF
Turn-on Delay Time td(on) ID = 17 A 32 ns
Rise Time tr VGS = 10 V 300 ns
Turn-off Delay Time td(off) VDD = 30 V 110 ns
Fall Time tf RG = 10 Ω 140 ns
Total Gate Charge QG ID = 34 A 45 nC
Gate to Source Charge QGS VDD = 48 V 7 nC
Gate to Drain Charge QGD VGS = 10 V 13 nC
Body Diode Forward Voltage Note VF(S-D) IF = 34 A, VGS = 0 V 0.94 V
Reverse Recovery Time trr If = 34 A, VGS = 0 V 60 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
μ
s 95 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25 Ω
50 Ω
PG.
L
V
DD
V
GS
= 20 → 0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1 s
μ
Duty Cycle ≤ 1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10% 90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG. 50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D13798EJ5V0DS 3
2SK3225
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - °C
dT - Percentage of Rated Power - %
020 40 60 80 100 120 140 160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - °C
P
T
- Total Power Dissipation - W
020 40 60 80 100 120 140 160
70
60
50
40
30
20
10
0.1
1
10
100
1000
0.1 1 10 100
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
ms
10
ms
ID(DC)
ID(pulse)
R
DS(on)
Limited
(at V
GS
= 10 V)
T
C
= 25
˚C
Single Pulse
DC
μ
Pw = 10 s
μ
100 s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.001
0.01
0.1
1
100
1000
1
m10
m 100
m 1 10 100 1000 10
μμ
100
Single Pulse
R
th(ch-C)
= 3.13
˚C/W
R
th(ch-A)
= 125
˚C/W
Data Sheet D13798EJ5V0DS
4
2SK3225
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID - Drain Current - A
Pulsed
14
23
1000
100
10
1
0.1 56
0
TA = −50˚C
25˚C
75˚C
150˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
00234
160
200
1
Pulsed
V
GS
=
10 V
4.0
V
120
80
40
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
y
fs
| - Forward Transfer Admittance - S
V
DS
=
10
V
Pulsed
0.1 1
1
10
100
10 100
0.1
T
A
= 150˚C
75˚C
25˚C
−50˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
05
20
10
30
10 15
Pulsed
ID
=
17
A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
10
101
20
30
100 1000
Pulsed
0
VGS = 4.0 V
10 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate to Source Cut-off Voltage - V
VDS = 10
V
ID = 1
mA
−50 0 50 100 150
0
1.0
2.0
1.5
0.5
Data Sheet D13798EJ5V0DS 5
2SK3225
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0−50
10
050 100 150
I
D
= 17
A
20
40
30 V
GS
= 4.0
V
10
V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
01.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
0 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
10
0.1
100
1000
10000
1 10 100
VGS = 0 V
f = 1
MHz
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
110.1
100
1000
10 100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 30
V
V
GS
= 10
V
R
G
= 10
Ω
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt
=
100
A
/μs
V
GS
=
0 V
1
0.1
10
1 10 100
1000
100
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
020 40 60 80
20
40
60
80
2
4
6
8
0
V
DD
= 48 V
30 V
12 V
12
14
16
10
I
D
= 34
A
V
GS
= 10
V
V
GS
V
DS
Data Sheet D13798EJ5V0DS
6
2SK3225
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1.0
10
100
1
m10
m
R
G
= 25
Ω
V
DD
= 30
V
V
GS
= 20
→
0 V
Starting T
ch
= 25°C
I
AS
= 15
A
10
μ
100
μ
0.1
E
AS
=
22
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50 75 100
160
140
120
100
80
60
40
20
0
125 150
V
DD
= 30 V
R
G
= 25 Ω
V
GS
= 20 → 0 V
I
AS
≤ 15 A
Data Sheet D13798EJ5V0DS 7
2SK3225
PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3) 2)TO-252 (MP-3Z)
Note The depth of notch at the top of the fin is from
0 to 0.2 mm.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
213
6.5±0.2
5.0±0.2
4
1.5-
0.1
+0.2
5.5±0.27.0 MIN.
13.7 MIN.
2.32.3
0.75
0.5±0.1
2.3±0.2
1.6±0.2
1.1±0.2
0.5-
0.1
+0.2
0.5-
0.1
+0.2
123
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1 0.5 ±0.1
5.6 ±0.3
9.5 ±0.5
2.5 ±0.5
1.0 ±0.5
1.5 −0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
Note
0.4 MIN.
0.5 TYP.
0.15 ±0.15
2.3 ±0.3 2.3 ±0.3
5.5 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
<R>
2SK3225
The information in this document is current as of November, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
