BYS10-25 thru BYS10-45
Document Number 86013
14-Jul-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AC (SMA)
Surface Mount Schottky Barrier Rectifier
Major Ratings and Characteristics
IF(AV) 1.5 A
VRRM 25 V to 45 V
IFSM 40 A
VF0.50 V
Tj max. 150 °C
Features
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter Symbol BYS10-25 BYS10-35 BYS10-45 Unit
Device marking code BYS 025 BYS 035 BYS 045
Maximum repetitive peak reverse voltage VRRM 25 35 45 V
Maximum average forward rectified current IF(AV) 1.5 A
Peak forward surge current single half sine-wave
superimposed on rated load
at 8.3 ms
at 10 ms
IFSM 40
30
A
Junction and storage temperature range TJ, TSTG - 65 to + 150 °C
www.vishay.com
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Document Number 86013
14-Jul-05
BYS10-25 thru BYS10-45
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified#
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbol BYS10-25 BYS10-35 BYS10-45 Unit
Maximum instantaneous forward
voltage
at 1.0 A (1) VF 500 mV
Maximum DC reverse current at VRRM(1) TJ = 25 °C
TJ = 100 °C
IR 500
10
µA
mA
Parameter Symbol BYS10-25 BYS10-35 BYS10-45 Unit
Maximum Thermal Resistance - Junction Lead RθJL 25 °C/W
Maximum Thermal Resistance - Junction Ambient RθJA
150 (1)
125 (2)
100 (3)
°C/W
Figure 1. Max. Reverse Power Dissipation
vs. Junction Temperature
P
R
-- Max. Reverse Power Dissipation (W)
T
j
-- JunctionTemperature (°C)
0 40 80 120 160
0
1
2
3
4
7
200
5
6
BYS10-25
BYS10-35
BYS10-45
R
thJA
=100K/W
R
thJA
=25K/W
Figure 2. Max. Reverse Current
vs. Junction Temperature
I
R
-- Reverse Current (mA)
T
j
-- JunctionTemperature (°C)
0 40 80 120 160
0.1
1
10
100
1000
200
V
R
=V
RRM
BYS10-25 thru BYS10-45
Document Number 86013
14-Jul-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Max. Average Forward Current
vs. Ambient Temperature
Figure 4. Max. Average Forward Current
vs. Ambient Temperature
T
amb
-- Ambient Temperature (°C)
I
FAV
-- Average Forward Current (A)
0
0
0.4
0.8
1.2
1.6
2.0
40 80 120 160 200
V
R
=V
RRM
, Half Sinewave, R
thJA
=25K/W
BYS10-25
BYS10-35
BYS10-45
T
amb
-- Ambient Temperature (°C)
I
FAV
-- Average Forward Current (A)
0
0
0.4
0.8
1.2
1.6
2.0
40 80 120 160 200
V
R
=0V, Half Sinewave
100K/W
125K/W
150K/W
R
thJA
=25K/W
Figure 5. Max. Forward Current
vs. Forward Voltage
Figure 6. Diode Capacitance
vs. Reverse Voltage
I
F
-- Forward Current (A)
V
F
-- Forward Voltage (V)
0 0.4 0.8 1.2 1.6
0.01
0.1
1
10
100
2.0
T
j
=25°-C
T
j
=150°-C
t, Heating Time (sec.)
Transient Thermal Impedance (°C/W)
0.01 0.1 110 100
0.1
1
10
100
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
