PD - 96385A AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features l l l l l l l l l l HEXFET(R) Power MOSFET Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G V(BR)DSS 40V RDS(on) max. 4m h ID S 160A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. D2Pak AUIRL1404S TO-262 AUIRL1404L G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Max. 160 110 640 3.8 200 1.3 20 520 95 20 5.0 -55 to + 175 c Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds c Units h h Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V d c e A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance RJC RCS RJA Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB mounted) --- 0.50 --- 0.75 --- 40 C/W i HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 09/06/11 AUIRL1404S/L Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 40 --- --- V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.038 --- --- --- 4.0 --- --- 5.9 RDS(on) Static Drain-to-Source On-Resistance Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 95A f f VGS = 4.3V, ID = 40A VGS(th) Gate Threshold Voltage 1.0 --- 3.0 V gfs IDSS Forward Transconductance 93 --- --- S VDS = 25V, ID = 95A Drain-to-Source Leakage Current --- --- 20 A VDS = 40V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 200 Gate-to-Source Reverse Leakage --- --- -200 VDS = VGS, ID = 250A VDS = 32V, VGS = 0V, TJ = 150C nA VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge --- --- 140 Qgs Gate-to-Source Charge --- --- 48 Qgd Gate-to-Drain ("Miller") Charge --- --- 60 VGS = 5.0V,See Fig 6 td(on) Turn-On Delay Time --- 18 --- VDD = 20V tr Rise Time --- 270 --- td(off) Turn-Off Delay Time --- 38 --- tf Fall Time --- 130 --- LD Internal Drain Inductance LS Internal Source Inductance --- 4.5 --- --- 7.5 --- ID = 95A nC VDS = 32V f ID = 95A ns RG = 2.5,VGS = 4.5V RD = 0.25 f Between lead, nH D 6mm (0.25in.) Between lead, G Ciss Input Capacitance --- 6600 --- and center of die contact VGS = 0V Coss Output Capacitance --- 1700 --- VDS = 25V Crss Reverse Transfer Capacitance --- 350 --- Coss Output Capacitance --- 6700 --- Coss Output Capacitance Effective Output Capacitance Coss eff. pF S = 1.0MHz, See Fig.5 VGS = 0V, VDS = 1.0V, =1.0MHz --- 1500 --- VGS = 0V, VDS = 32V, =1.0MHz --- 1500 --- VGS = 0V, VDS = 0V to 32V Min. Typ. Max. g Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD h Conditions MOSFET symbol --- --- (Body Diode) Diode Forward Voltage --- --- 640 --- --- 1.3 trr Reverse Recovery Time --- 63 94 ns Qrr Reverse Recovery Charge --- 170 250 nC ton Forward Turn-On Time c 160 Units A V showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 95A, VGS = 0V f S TJ = 25C, IF = 95A di/dt = 100A/s f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 0.35mH, RG = 25, IAS = 95A. (See Figure 12) ISD 95A, di/dt 160A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2 Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4. This is applied to D2Pak, When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com AUIRL1404S/L Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-D2 PAK MSL1 3L-TO-262 N/A Machine Model Class M4(+/- 800V ) (per AEC-Q101-002) Human Body Model Class H2(+/- 4000V ) (per AEC-Q101-001) Charged Device Model Class C5(+/- 2000V ) (per AEC-Q101-005) ESD RoHS Compliant Yes Qualification standards can be found at International Rectifier's web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 AUIRL1404S/L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.3V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 4.3V 4.3V 100 100 20s PULSE WIDTH TJ = 25 C 10 0.1 1 10 2.5 V DS = 15V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 4.0 10 100 Fig 2. Typical Output Characteristics 1000 TJ = 175 C 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 25 C 20s PULSE WIDTH TJ = 175 C 10 0.1 100 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.3V TOP TOP ID = 160A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRL1404S/L VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 8000 Ciss 6000 4000 Coss 2000 20 VGS , Gate-to-Source Voltage (V) 10000 1 10 VDS = 32V VDS = 20V 16 12 8 4 Crss 0 ID = 95A 0 100 VDS , Drain-to-Source Voltage (V) FOR TEST CIRCUIT SEE FIGURE 13 0 200 300 400 500 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID , Drain Current (A) ISD , Reverse Drain Current (A) 100 1000 TJ = 175 C TJ = 25 C V GS = 0 V 0.5 1.0 1.5 2.0 2.5 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 100us 100 10 1 0.0 10us 3.0 1ms 10 TC = 25 C TJ = 175 C Single Pulse 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRL1404S/L 160 LIMITED BY PACKAGE V GS 120 ID , Drain Current (A) RD V DS D.U.T. RG + -V DD 80 10V Pulse Width 1 s Duty Factor 0.1 % 40 0 25 50 75 100 125 150 VDS 175 90% TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRL1404S/L 15V D.U.T RG + V - DD IAS 20V A 0.01 tp TOP 1000 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 1200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp BOTTOM ID 39A 67A 95A 800 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50K 12V QGS .2F .3F QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 AUIRL1404S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG VGS * + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period V[ GS=10V] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs 8 www.irf.com AUIRL1404S/L D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUL1404S YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRL1404S/L TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number AUL1404L YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRL1404S/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. www.irf.com 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 11 AUIRL1404S/L Ordering Information Base part AUIRL1404L AUIRL1404S 12 Package Type TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRL1404L AUIRL1404S AUIRL1404STRL AUIRL1404STRR www.irf.com AUIRL1404S/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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