p-channel JFETs designed for... = Analog Switches = Choppers =# Commutators = Amplifiers Performance Curves PE See Section 5 BENEFITS @ Low Insertion Loss Siliconix Rps(on) < 180 & (2N3386) TO-72 See Section 7 *ABSOLUTE MAXIMUM RATINGS (25C) Gate-Drain Voltage (Note 1) .... 0.2.0... cece eee 30 V Gate-Source Voltage (Note 1) .................... 30 V 5 Gate Current .......... te eeeee seen e ee eee 50 mA so Storage Temperature Range.............. -65 to +200C Total Dissipation at 25C Ta (Note 2) .......... 300 mW s 6 s *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N3382 2N3384 2N3386 . 7 Characteristic Unit Test Conditions Min Max Min Max Min Max Ves = 30V 1 'gss Gate Reverse Current 15 15 15 nA Vpg=0 2 less Gate Reverse Current 15 15 15 yA vos SV Ta = 180C s Ds =0 T Gate-Source Breakdown {gG=1pA 3 A BVgss Voltage 30 30 30 y Vps=0 rT Gate-Source Cutoff Vps=-5V | . 4 VGSt{off) Voltage (Note 3) 1.0 5.0 4.0 5.0 4.0 9.5 Ip=-1pA Saturation Drain Current Vps = -10 V 5 -3. ~30. -15. -30. -15. ~50.! A Ipss (Note 3) 3.0 30.0 15.0 0.0 15.0 50.0 m Vag =0 : ~-2 2 -2.5 nA Vps =-5 V 6 ID(off) Drain Cutoff Current (6) (6) (10) (Vv) Vas=() Drain-Source ON Vasg=0 7 "ds(on) Resistance 300 180 150 Q Vpg=0 vk jp = z Common-Source Forward . Vps=-10V Y hi 8 N Ofs Transconductance (Note 3) 4500 12,500 7500 12,500 7600 15,000 ymho Vgg=0 TA Cy Source-Gate Capacitance gs = 9 [MIs Plus 6.0 6.0 6.0 Vps = 0 1 . . Ve6s=10V _Ic Cadgs Drain-Gate Capacitance pF = 140 kHz - Common-Source Input Vps=-5 V 10 Ciss Capacitance 16 Typ VG6s=1V PE * JEDEC registered data. NOTE: 1, Due to symmetrical geometry, units may be operated with source and drain leads interchanged. 2. Derate linearly to +175C at 2mW/C 3. Pulsewidth = 2 ms, duty cycle < 3%. 3-5 1979 Siliconix incorporated OSCENZ PSECENZ T8EENT xXIUOSI PE iconix GATE ALSO BACKSIDE CONTACT SAND D ARE SYMETRICAL poz (0.711) ALL DIMENSIONS IN INCHES (ALL DIMENSIONS IN MILLIMETERS} hannel JFET Designed for. General Purpose Amplifiers = Switches TYPE PACKAGE Single TO-72 Single Chip PERFORMANCE CURVES (25C unless otherwise noted) Qutput Characteristic Ip ~ DRAIN CURRENT (mA) o 2 4 6 8 W 12 14 16 CAPACITANCE (pF) 18 Vps DRAIN-SOURCE VOLTAGE (VOLTS} Transfer Characteristics Vps = -10 Ip DRAIN CURRENT {mA} 0 Vas GATE-SOURCE VOLTAGE {VOLTS) = Gn NOISE VOLTAGE (nV//Hiz} Drain Current & Transconductance Transconductance Characteristics Vos = -10V iad gfs FORWARD TRANSCONDUCTANCE (mmbos) loss SATURATION CURRENT (mA) Vs GATE-SOURCE VOLTAGE (VOLTS) 000 Siliconix BENEFITS: Wide Range of Transconductance PRINCIPAL DEVICES 2N3382, 2N3384, 2N3386, VCR3P 2N3382CHP-86CHP, VCR3PCHP Common-Source Capacitances vs Gate-Source Voltage 2 Ves GATE-SOURCE VOLTAGE (VOLTS) Equivalent Input Noise Voltage vs Frequency 10 10 100 1K f FREQUENCY (Hz) vs Gate-Source Voltage VI = wes7 wk 8 fs O f= 1 kHz ! 10K 2 5 x 2 2 Hi 4K 3 2K : R o t 2 3 4 5 6 Vestoff) GATE-SOURCE VOLTAGE (VOLTS) 5-38 1979 Siliconix incorporated