VARACTOR TUNING DIODES 3.3 450 23 31 Reverse Current @ T,=25C 4.7 450 24 3.1 and V, = 25.0 volts 20 nA 6.8 450 25 3.1 Reverse Current @ T,=150C 8.2 450 2.5 3.1 and V, = 25.0 volts 20 uA 10.0 400 26 3.1 Package Style DO-7 12.0 400 26 3.1 DC Power Dissipation High Q 15.0 400 2.6 3.1 @ T,=25C 400 mW 18.0 350 2.6 3.1 Operating Temp. Range -65C/+150C 20.0 350 26 3.1 Storage Temp. Range -65C/+150C Low 22.0 350 26 3.2 Capacitance Standard Voltage 350 26 32 30 30 Standard Device 420% 27.0 : . Suffix A 10% 33.0 350 2.6 3.2 Suffix B +5% General 39.0 300 26 3.2 suffi 4 uffix C 42% Purpose 47.0 ooo re 38 1.00 0.30 1.00 25.4 7.63 25.4 68.0 175 27 3.3 Min Max Min + 82.0 175 27 3.3 oD 100.0 175 27 33 a 4120.0 150 27 33 9.018/0.022 5,, Polarity _-9.018/0.022 28 139 130 0457/0 559 ean, 0.457/0.559 Low Q 40 0 100 | Low Voltage 56 60 75 All Dimensions ne DO-7 25 80 7 24 30 Reverse Current @ T,=25C General 28 25 30 and V, = V,yy Volts 1.0 uA Purpose 40 25 30 Reverse Current @ T,=150C 56 25 30 and V, = V,, Volts 50 uA 6.8 : Package Style DQ-7 8.2 2.42 2.58 | 0.263 0.283 100 4110 * Package Style DO-14 10.0 ' 2.34 2.50 | 0.242 0.262 100 110 DC Power Dissipation 12.0 2.35 2.49 | 0.242 0.259 100 110 @ T,225C 400 mw 15.0 2.37 2.49 | 0.242 0.256 100 110 Reverse Current @ T,=25C High and V, = 55 volts 5 nA 18.0 2.36 2.48 | 0.242 0.254 90 99 . = orc Voltage} 22.0 15 | 2:35 2.46 | 0.241 0.252] 90 99 | Reverse Current @ met 5 uA 27.0 2.35 2.46 | 0.276 0.285 65 72 Temp. Coefficient of Capacitance Low 33.0 2.35 2.46 | 0.287 0.295 60 66 at VR=4.0 Vde Leakage 39.0 2.34 2.44 | 0.300 0.306 55 61 | _ and T,=-40/485C 0.03% 47.0 2.33 2.43 | 0.313 0.320] 50 55 eee eee anae, eseg/s180%G 56.0 2.32 2.42 | 0.348 0.354 40 44 Capacitance Tolerance 68.0 2.30 2.40 | 0.398 0.404 30 33 Standard Device 20% 82.0 2.26 2.36 | 0.477 0.483 20 22 Suffix A 10% 100.0 2.24 2.33 | 0.478 0.484 20 22 Suffix B 5 % ffi 2% 6.8 2.40 256 | 0462 0482| 25 28 tans tt og 8.2 2.42 2.58 | 0.455 0.473 25 28 10.0 2.34 2.50 | 0.443 0.461 25 28 12.0 2.35 2.49 | 0.441 0.457 25 28 1.00 0.30 400 Low 15.0 2.37 2.49 | 0.438 0.448 25 28 + lel oa Voltage Min Max Min 18.0 2.36 2.48 | 0.487 0.497 20 22 Pp 22.0 2.35 2.46 | 0.487 0.497 20 22 a * Low 27.0 15 2.35 2.46 | 0.486 0.496 20 22 0.018/0.022 0.018/0.022 .. Leakage 33.0 2.35 2.46 | 0.485 0.495 20 22 pasvossg oY Qasriogs0 OF? 39.0 2.34 2.44 | 0.483 0.494 20 22 (Cathode) 47.0 2.33 2.43 | 0.483 0.492 20 22 All Dimensions in MCheS 56.0 2.32 2.42 | 0.551 0.561 15 17 68.0 2.30 2.40 | 0.551 0.561 15 17 82.0 2.26 2.36 | 0.549 0.558 15 17 DO-7 100.0 2.24 2.33 | 0.547 0.553 15 17 INTERNATIONAL SEMICONDUCTOR, INC. 89