BSS84DWQ-13 - DIODES Incorporated

BSS84DW

Document number: DS30204 Rev. 17 - 2

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BSS84DW

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS RDS(on) max ID

TA = +25°C

-50V 10 @ VGS = -5V -130mA

Description

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 General Purpose Interfacing Switch

 Power Management Functions

 Analog Switch

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT363

 Case Material: Molded Plastic. “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Compliance Case Packaging

BSS84DW-7-F Standard SOT363 3,000/Tape & Reel

BSS84DWQ-13 Automotive SOT363 10,000/Tape & Reel

BSS84DWQ-7 Automotive SOT363 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012

Code J K L M N P R S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT363

Top View Top View

Internal Schematic

K84 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: N = 2002)

M = Month (ex: 9 = September)

K84 YM

BSS84DW

Document number: DS30204 Rev. 17 - 2

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BSS84DW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage VDSS -50 V

Drain-Gate Voltage (Note 5) VDGR -50 V

Gate-Source Voltage Continuous VGSS 20 V

Drain Current (Note 6) Continuous ID -130 mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 6) PD 300 mW

Thermal Resistance, Junction to Ambient RθJA 417 C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BVDSS -50 -75  V VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS







-1

-2

-100

µA

VDS = -50V, VGS = 0V, TJ = +25°C

VDS = -50V, VGS = 0V, TJ = +125°C

VDS = -25V, VGS = 0V, TJ = +25°C

Gate-Body Leakage IGSS   10 nA VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage VGS

(

)

-0.8 -1.6 -2.0 V

VDS = VGS, ID = -1mA

Static Drain-Source On-Resistance RDS

(

)

 6 10  VGS = -5V, ID = -0.100A

Forward Transconductance gFS 0.05   S VDS = -25V, ID = -0.1A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss   45 pF

VDS = -25V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss   25 pF

Reverse Transfer Capacitance Crss   12 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time tD

(

)

 10  ns VDD = -30V, ID = -0.27A,

RGEN = 50, VGS = -10V Turn-Off Delay Time tD

(

OFF

)

 18  ns

Notes: 5. RGS  20K.

6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

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100

25 50 75 100 125 150 175 200

DISSI

N (mW)

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Max Power Dissipation vs. Ambient Temperature

150

200

250

300

350

400

-600

-500

-400

-300

-200

-100

0-2

-1

-5

-4-3

I, D

-S

(mA)

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 2 Drain-Source Current vs. Drain-Source Voltage

T = 25C

-0.0

-1.0

-0.8

-0.6

-0.4

-0.2

0-2-3-4-1 -8-7

-6

-5

I, D

(A)

V , GATE-SOURCE VOLTAGE (V)

Fig. 3 Drain-Current vs. Gate-Source Voltage

0-1 -2 -3 -4 -5

V , GATE-SOURCE VOLTAGE (V)

Fig. 4 On-Resistance vs. Gate-Source Voltage

T= 25C

T = 125C

R , NORMALIZED DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



-50 -25 0 25 50 125

100

75 150

T , JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance vs. Junction Temperature

V = -10V

I = -0.13A

R , ON-RESISTANCE ( )

DS(ON)



0.0

5.0

10.0

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0

I , DRAIN-CURRENT (A)

Fig. 6 On-Resistance vs. Drain-Current

15.0

20.0

25.0

V = -8V

V = -10V

V = -3V

V= -3.5V

V = -4V

V = -4.5V

V = -6V

V = -5V

N-

()

DS(ON)



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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT363

Dim Min Max Typ

A 0.10 0.30 0.25

B 1.15 1.35 1.30

C 2.00 2.20 2.10

D 0.65 Typ

F 0.40 0.45 0.425

H 1.80 2.20 2.15

J 0 0.10 0.05

K 0.90 1.00 1.00

L 0.25 0.40 0.30

M 0.10 0.22 0.11

 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.5

G 1.3

X 0.42

Y 0.6

C1 1.9

C2 0.65

B C

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Document number: DS30204 Rev. 17 - 2

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BSS84DW

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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final and determinative format released by Diodes Incorporated.

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

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