Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 1 of 6 July 2010
ECP200D
2 Watt, High Linearity InGaP HBT Amplifier
Product Features
• 400 – 2300 MHz
• 18 dB Gain @ 900 MHz
• +33 dBm P1dB
• +51 dBm Output IP3
• +5V Single Positive Supply
• Lead-free/green/RoHS-compliant
16pin 4mm QFN package
Applications
• Final stage amplifiers for Repeat ers
• Mobile Infrastructure
Product Description
The ECP200D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +51
dBm OIP3 and +33 dBm of compressed 1dB power. It
is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surface-
mount package. All devices are 100% RF and DC
tested.
The ECP200D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP200D to maintain high linearity over temperature
and operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Function Pin No.
Vref 1
RF Input 3
RF Output 10, 11
Vbias 16
GND Backside Paddle
N/C or GND 2, 4-9, 12-15
Specifications (1)
Parameter Units Min Typ Max
Operational Bandwidth MHz 400 2300
Test Frequency MHz 2140
Gain dB 9 10
Input Return Loss dB 20
Output Return Loss dB 6.8
P1dB dBm +32 +33.2
Output IP3 (2) dBm +47 +48
IS-95A Channel Power
@
-45 dBc ACPR, 1960 MHz dBm +27.5
wCDMA Channel Power
@
-45 dBc ACLR, 2140 MHz dBm +25.3
Noise Figure dB 7.7
Operating Current Range, Icc (3) mA 700 800 900
Device Voltage, Vcc V +5
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected th at the current c an increase b y an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the in ternal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current
typically will be 822 mA.)
Absolute Maximum Rating
Parameter Rating
Storage Temperature -65 to +150 °C
RF Input Power (continuous) +28 dBm
Device Voltage +8 V
Device Current 1400 mA
Device Power 8 W
Thermal Resistance, Rth 17.5°C/W
Junction Temperature +200°C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (4)
Parameter Units Typical
Frequency MHz 900 1960 2140
S21 – Gain dB 18 11 10
S11 – Input R.L. dB -18 -19 -20
S22 – Output R.L. dB -11 -6.8 -6.8
P1dB dBm +33 +33.4 +33.2
Output IP3 dBm +49 +51 +48
IS-95A Channel Power
@
-45 dBc ACPR dBm +27 +27.5
wCDMA Channel Power
@
-45 dBc ACLR dBm +25.3
Noise Figure dB 8.0 7.3 7.7
Device Bias (3) +5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
Ordering Information
Part No. Description
ECP200D-G 2 Watt, High Line arity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
ECP200D-PCB900 900 MHz Evaluation Board
ECP200D-PCB1960 1960 MHz Evaluation Board
ECP200D-PCB2140 2140 MHz Evaluation Board
Standard tape / reel size = 1000 pieces on a 7” reel
1
2
3
4
12
11
10
9
16
15 14 13
5 6 78
N/C
RF OUT
RF OUT
N/C
Vre
f
N/C
RF IN
N/C
Vbias
N/C
N/C
N/C
N/C
N/C
N/C
N/C
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 2 of 6 July 2010
ECP200D
2 Watt, High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system)
50 550 1050 1550 2050 2500
Frequency (MHz)
Gain / Maximum Stable Gain
0
5
10
15
20
25
30
35
40
Gain (dB)
DB(|S(2,1)|) DB(GMax())
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Swp M ax
4000MHz
Swp Min
50MHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Swp M ax
4000MHz
Swp Min
50MHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -0.80 -177.34 27.72 107.79 -45.30 19.06 -0.81 -139.65
100 -0.60 178.13 22.13 96.85 -43.21 11.92 -0.79 -158.43
200 -0.64 174.02 16.20 89.13 -44.86 -4.05 -0.62 -168.80
400 -0.76 166.66 10.54 80.79 -42.84 6.99 -0.35 -177.29
600 -0.89 158.43 7.75 72.52 -44.05 2.89 -0.47 179.92
800 -1.08 150.86 6.09 64.42 -43.61 -7.72 -0.66 179.00
1000 -1.54 141.98 5.29 54.50 -42.64 -4.97 -0.73 177.98
1200 -2.48 131.55 5.24 41.62 -39.25 -33.49 -0.82 176.35
1400 -5.25 115.96 5.83 20.85 -39.43 -52.73 -0.58 175.10
1600 -16.57 118.86 6.03 -9.41 -37.39 -100.38 -0.58 174.84
1800 -7.12 -149.33 3.81 -47.41 -39.26 -126.48 -0.42 170.66
2000 -2.68 -169.62 0.37 -72.56 -40.69 -169.19 -0.52 169.04
2200 -1.34 175.50 -3.32 -89.96 -45.63 -163.76 -0.53 167.35
2400 -0.80 164.47 -6.81 -102.05 -50.41 149.05 -0.61 164.01
2600 -0.49 154.67 -9.46 -112.59 -48.80 157.02 -0.62 162.14
2800 -0.53 146.29 -12.22 -121.23 -50.62 69.74 -0.68 157.85
3000 -0.50 136.44 -14.55 -128.37 -49.46 79.86 -0.77 156.81
Device S-parameters are available for download from the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 3 of 6 July 2010
ECP200D
2 Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (ECP200D-PCB900)
Typical RF Performance at 25 °C
Frequency 900 MHz
S21 – Gain 18 dB
S11 – Input Return Loss -18 dB
S22 – Output Return Loss -11 dB
Output P1dB +33 dBm
Output IP3
(
+17 dBm / tone, 1 MHz s
p
acin
g)
+49 dBm
Channel Power
(@
-45 dBc ACPR, IS-95 9 channels fwd
)
+27 dBm
Noise Figure 8.0 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
ID=C2
C=56 pF
ID=C3
C=56 pF
ID=C4
C=1e7 pF
ID=C6
C=10 pF
ID=C7
C=1000 pF
ID=C8
C=8.2 pF
ID=L1
L=18 nH
ID=C11
R=0 Ohm
ID=C9
C=10 pF
ID=C5
C=1000 pF
ID=R2
R=22 Ohm
ID=R3
R=51 Ohm
TLINP
ID=TL1
Z0=50 Ohm
L=75 mil
Eeff=3.16
Loss=0
F0=0 GHz
TLINP
ID=TL2
Z0=50 Ohm
L=375 mil
Eeff=3.16
Loss=0
F0=0 GHz
ID=R1
R=15 Ohm
ID=R4
R=0 Ohm
ID=C1
C=56 pF
1
2
3
4
5678
9
10
11
12
13141516
ID=ECP200D
C8 should be placed at silk screen marker "B"
on the WJ evaluation board.
C9 should be placed at s ilk
screen marker "8" on the
+5.6V Zener
Vsupply = +5V
size 1008
WJ evaluation board.
S21 vs. Frequency
15
16
17
18
19
20
840 860 880 900 920 940
Frequency (M Hz)
S21
dB
+25°C -40°C +85°C
S11 vs. Frequen cy
-30
-25
-20
-15
-10
-5
0
840 860 880 900 920 940
Frequency (M Hz)
S11
dB
+25°C -40°C +85°C
S22 vs. Frequen cy
-20
-15
-10
-5
0
840 860 880 900 920 940
Frequency (M Hz)
S22
dB
+25°C -40°C +85°C
Noise Figure vs. Frequency
0
2
4
6
8
10
840 860 880 900 920 940
Frequency (MH z)
NF
(
dB
)
-40°C +25°C +85°C
P1dB vs. Frequency
Circuit boards are optimized at 880 M Hz
26
28
30
32
34
36
840 860 880 900 920 940
Frequency (MH z)
P1dB
(
dBm
)
-40°C +25°C +85°C
ACPR vs. Channel Power
IS-95, 9 C h. Fwd, ±885 kHz offset, 30 kHz M eas BW, 900 MH z
-70
-60
-50
-40
22 23 24 25 26 27 28 29
Output Channel Power (dBm)
ACPR
(
dBc
)
-40 C +25 C +85 C
OIP3 vs. Frequency
+25° C, +17 dBm /tone
35
40
45
50
55
840 860 880 900 920 940
Frequency (MH z)
OIP3
(
dBm
)
O IP3 vs. Tem perature
freq. = 900 M Hz, 901 MH z, +17 dBm /tone
35
40
45
50
55
-40 -15 10 35 60 85
Tem perature (°C )
OIP3
(
dBm
)
O IP3 vs. Ou tput Po wer
freq. = 900 M Hz, 901 M Hz, +25° C
35
40
45
50
55
12 14 16 18 20 22 24 26
Output Power (dBm)
OIP3
(
dBm
)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 4 of 6 July 2010
ECP200D
2 Watt, High Linearity InGaP HBT Amplifier
1960 MHz Application Circuit (ECP200D-PCB1960)
Typical RF Performance at 25 °C
Frequency 1960 MHz
S21 – Gain 11 dB
S11 – Input Return Loss -20 dB
S22 – Output Return Loss -6.8 dB
Output P1dB +33.4 dBm
Output IP3
(
+17 dBm / tone, 1 MHz s
p
acin
g)
+51 dBm
Channel Power
(@
-45 dBc ACPR, IS-95 9 channels fwd
)
+27.5 dBm
Noise Figure 7.3 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
ID=C2
C=56 pF
ID=C4
C=1e7 pF
ID=C5
C=1000 pF
ID=C6
C=10 pF
ID=C7
C=1000 pF
ID=C8
C=2.2 pF ID=C9
C=3.9 pF
ID=L1
L=18 nH
ID=C11
R=0 Ohm
ID=R2
R=22 Ohm
ID=R3
R=51 Ohm
TLINP
ID=TL1
Z0=50 Ohm
L=300 mil
Eeff=3.16
Loss=0
F0=0 GHz
ID=R1
R=15 Ohm
ID=R4
R=0 Ohm
TLINP
ID=TL2
Z0=50 Ohm
L=100 mil
Eeff=3.16
Loss=0
F0=0 GHz
TLINP
ID=TL3
Z0=50 Ohm
L=125 mil
Eeff=3.16
Loss=0
F0=0 GHz
ID=C10
C=1.5 pF
ID=C1
C=56 pF
ID=C3
C=56 pF
1
2
3
4
5678
9
10
11
12
13141516
ID=ECP200D
on the WJ evaluation board.
C8 should be placed between silk screen markers "F"
and "G" on the WJ evaluation board.
C9 should be placed between
silkscreen markers "2" and "3"
+5.6V Zener
Vsupply = +5V
size 1008
the WJ evaluation board.
C10 should be placed at
silkscreen marker "5" on
S21 vs. Frequency
8
9
10
11
12
13
1930 1940 1950 1960 1970 1980 1990
Frequency (M Hz)
S21
dB
+25°C -40°C +85°C
S11 vs. Frequen cy
-30
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (M Hz)
S11
dB
+25°C -40°C +85°C
S22 vs. Frequen cy
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (M Hz)
S22
dB
+25°C -40°C +85°C
Noise Figure vs. Frequency
0
2
4
6
8
10
1930 1940 1950 1960 1970 1980 1990
Frequency (M Hz)
NF
(
dB
)
-40°C +25°C +85°C
P1dB vs. Frequency
Circuit boards are optimized at 1960 M Hz
26
28
30
32
34
36
1930 1940 1950 1960 1970 1980 1990
Frequency (M Hz)
P1dB
(
dBm
)
-40°C +25°C +85°C
ACPR vs. Channel Power
IS-95, 9 C h. Fwd, ±885 kHz offset, 30 kHz M eas B W , 1960 MH z
-75
-65
-55
-45
-35
22 23 24 25 26 27 28 29
Output Channel Power (dBm )
ACPR
(
dBc
)
-4 0 C +25 C +85 C
OIP3 vs. Frequency
+25° C, +17 dBm /tone
35
40
45
50
55
1930 1940 1950 1960 1970 1980 1990
Frequency (MH z)
OIP3
(
dBm
)
O IP3 vs. Tem perature
freq. = 1960 M Hz, 1961 MH z, +17 dBm /tone
35
40
45
50
55
-40 -15 10 35 60 85
Tem perature (°C )
OIP3
(
dBm
)
O IP3 vs. Ou tput Po wer
freq. = 1960 M Hz, 1961 M Hz, +25° C
35
40
45
50
55
12 14 16 18 20 22
Output Power (dBm)
OIP3
(
dBm
)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 5 of 6 July 2010
ECP200D
2 Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (ECP200D-PCB2140)
Typical RF Performance at 25 °C
Frequency 2140 MHz
S21 – Gain 10 dB
S11 – Input Return Loss -20 dB
S22 – Output Return Loss -6.8 dB
Output P1dB +33.2 dBm
Output IP3
(
+17 dBm / tone, 1 MHz s
p
acin
g)
+48 dBm
W-CDMA Channel Power
(@
-45 dBc ACLR
)
+25.3 dBm
Noise Figure 7.7 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
ID=C1
C=56 pF
ID=C2
C=56 pF
ID=C3
C=1e7 pF
ID=C4
C=1000 pF
ID=C5
C=10 pF
ID=C6
C=1000 pF
ID=C8
C=3 pF ID=C9
C=3 pF
ID=L1
L=18 nH
ID=C11
R=0 Ohm
ID=R2
R=22 Ohm
ID=R3
R=51 Ohm
ID=R1
R=15 Ohm
ID=R4
R=0 Ohm
TLINP
ID=TL1
Z0=50 Ohm
L=175 mil
Eeff=3.16
Loss=0
F0=0 GHz
TLINP
ID=TL2
Z0=50 Ohm
L=75 mil
Eeff=3.16
Loss=0
F0=0 GHz ID=C10
C=1.5 pF
ID=C3
C=56 pF
TLINP
ID=TL3
Z0=50 Ohm
L=100 mil
Eeff=3.16
Loss=0
F0=0 GHz
1
2
3
4
5678
9
10
11
12
13141516
ID=ECP200D
the WJ evaluation board.
C10 should be placed at
silkscreen marker "4" on
on the WJ evaluation board.
C8 should be placed at silk screen marker "D"
on the WJ evaluation board.
C9 should be placed at
silkscreen marker "2"
+5.6V Zener
Vsupply = +5V
size 1008
S21 vs. Frequency
7
8
9
10
11
12
2110 2120 2130 2140 2150 2160 2170
Frequency (M Hz)
S21
dB
+25°C -40°C +85°C
S11 vs. Frequen cy
-30
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (M Hz)
S11
dB
+25°C -40°C +85°C
S22 vs. Frequen cy
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (M Hz)
S22
dB
+25°C -40°C +85°C
Noise Figure vs. Frequency
0
2
4
6
8
10
2110 2120 2130 2140 2150 2160 2170
Frequency (M Hz)
NF
(
dB
)
-40°C +25°C +85°C
P1dB vs. Frequency
Circuit boards are optimized at 2140 M Hz
26
28
30
32
34
36
2110 2120 2130 2140 2150 2160 2170
Frequency (M Hz)
P1dB
(
dBm
)
-40°C +25°C +85°C
ACPR vs. Channel Power
3G PP W -CD M A, Test M odel 1+64 DP CH , ±5 M Hz offset, 2140 MH z
-60
-55
-50
-45
-40
-35
22 23 24 25 26 27
Output Channel Pow er (dBm )
ACPR
(
dBc
)
-40 C +25 C +85 C
OIP3 vs. Frequency
+25° C, +17 dBm /tone
35
40
45
50
55
2110 2120 2130 2140 2150 2160 2170
Frequency (MH z)
OIP3
(
dBm
)
O IP3 vs. Tem perature
freq. = 2140 M Hz, 2141 MH z, +17 dBm /tone
35
40
45
50
55
-40 -15 10 35 60 85
Tem perature (°C )
OIP3
(
dBm
)
O IP3 vs. Ou tput Po wer
freq. = 2140 M Hz, 2141 M Hz, +25° C
35
40
45
50
55
12 14 16 18 20 22
Output Power (dBm)
OIP3
(
dBm
)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 6 of 6 July 2010
ECP200D
2 Watt, High Linearity InGaP HBT Amplifier
ECP200D-G Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering proces s es . The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Land Pattern
Product Marking
The component will be marked with an
“E200G” designator with an alphanumeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“ECP200D” designator followed by an
alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes between 500 and 1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted
device is highly recommended for proper thermal operation.
Damage to the device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performan ce
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25
mm (.010”).
3. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
5. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters (inches). Angles are in
degrees.