BSS138 50V N-Channel MOSFET FEATURES VDS = 50V,ID = 0.22A RDS(ON) < 6 @ VGS=4.5V RDS(ON) < 3.5 @ VGS=10V ESD Rating: 1000V HBM High Power and Current Handling Capability Lead Free Surface Mount Package Schematic Diagram APPLICATIONS Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays Marking and Pin Assignment SOT-23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size S138 BSS138 SOT-23 O180mm ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted) Parameter Symbol Tape width Quantity 8 mm 3000 units Limit Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS 20 V ID 0.22 ID(70C) 0.18 IDM 0.88 A PD 0.43 W TJ,TSTG -55 To 175 C RJA 350 C /W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range A THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) 1/7 BSS138 50V N-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250A Zero Gate Voltage Drain Current IDSS VDS=50V,VGS=0V 1 A Gate-Body Leakage Current IGSS VGS=20V,VDS=0V 10 uA BVGSO VDS=0V, IG=250uA 20 Gate Threshold Voltage VGS(th) VDS=VGS,ID=1mA 0.8 Drain-Source On-State Resistance RDS(ON) Gate-Source Breakdown Voltage 50 V V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1.5 VGS=10V, ID=0.22A 3.5 VGS=4.5V, ID=0.22A 6 VDS=10V,ID=0.22A 0.1 V S DYNAMIC CHARACTERISTICS (Note 4) Input Capacitance Clss 30 VDS=25V,VGS=0V, F=1.0MHz Output Capacitance Coss 15 Reverse Transfer Capacitance Crss 6 Turn-on Delay Time td(on) 2.6 Turn-On Rise Time tr Turn-Off Delay Time td(off) PF SWITCHING CHARACTERISTICS (Note 4) VDD=30V,VGS=10V, RGEN=6ID=0.22A 9 Turn-Off Fall Time tf 6 Total Gate Charge Qg 1.7 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=25V,ID=0.22A,VGS=10V nS 20 2.4 0.1 nC 0.4 DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.44A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. 2/7 1.4 V BSS138 50V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs R gen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G S 90% INVERTED 10% 10% 90% VIN 50% 10% Figure 1. Switching Test Circuit toff tf 50% PULSE WIDTH PD Power(W) ID- Drain Current (A Figure 2 Switching Waveforms TJ-Junction Temperature(C ) TJ-Junction Temperature(C ) Figure 3. Power Dissipation ID- Drain Current (A) Rdson On-Resistance( ) Figure 4. Drain Current Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5. Output Characteristics Figure 6. Drain-Source On-Resistance 3/7 BSS138 ID- Drain Current (A) Normalized On-Resistance 50V N-Channel MOSFET TJ-Junction Temperature(C ) Figure 7. Transfer Characteristics Figure 8. Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance( ) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 9. Rdson vs Vgs Figure 10. Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11. Gate Charge Figure 12. Source- Drain Diode Forward 4/7 BSS138 ID- Drain Current (A) 50V N-Channel MOSFET Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13. Safe Operation Area Square Wave Pluse Duration(sec) Figure 14. Normalized Maximum Transient Thermal Impedance 5/7 BSS138 50V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 NOTES Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0 8 1. All dimensions are in millimeters. 2. Tolerance 0.10mm (4 mil) unless otherwise specified. 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. 6/7 BSS138 50V N-Channel MOSFET SOT-23 Tape and Reel Information Dimensions in Millimeters (UNIT:mm) NOTES 1. 2. 3. All dimensions are in millimeters. 10 Sprocket hole pitch cumulative tolerance 0.20 MAX. General tolerance 0.25 . www.goodarksemi.com 7/7 Doc.USBSS138xSS3.2 Apr.2019