PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Device Package Reel Size Tape width Quantity
S138 BSS138 SOT-23 Ø180mm 8 mm 3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID 0.22
A
ID(70°C) 0.18
IDM 0.88 A
Maximum Power Dissipation PD 0.43 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 °C
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 350 °C /W
FEATURES
●VDS = 50V,ID = 0.22A
●High Power and Current Handling Capability
●Lead Free
●Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
SOT-23 Top View
A
PPLICATIONS
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
1/7
BSS138
50V N-Channel MOSFET
RDS(ON) < 6Ω @ VGS=4.5V
RDS(ON) < 3.5Ω @ VGS=10V
ESD Rating: 1000V HBM
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 50 V
Zero Gate Voltage Drain Current IDSS VDS=50V,VGS=0V 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V 10 uA
Gate-Source Breakdown Voltage BVGSO VDS=0V, IG=±250uA ±20 V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=1mA 0.8 1.5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.22A 3.5 Ω
VGS=4.5V, ID=0.22A 6
Forward Transconductance gFS VDS=10V,ID=0.22A 0.1 S
DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance Clss
VDS=25V,VGS=0V,
F=1.0MHz
30
PF Output Capacitance Coss 15
Reverse Transfer Capacitance Crss 6
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time td(on)
VDD=30V,VGS=10V,
RGEN=6Ω，ID=0.22A
2.6
nS
Turn–On Rise Time tr 9
Turn-Off Delay Time td(off) 20
Turn–Off Fall Time tf 6
Total Gate Charge Qg
VDS=25V,ID=0.22A,VGS=10V
1.7 2.4
nC Gate–Source Charge Qgs 0.1
Gate–Drain Charge Qgd 0.4
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.44A 1.4 V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
2/7
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
OFF CHARACTERISTICS
BSS138
50V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V g s R gen
V in
G
V d d
Rl
V o ut
S
D
Figure 1. Switching Test Circuit
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%
tr
ton
90%
10%
toff
td(off) tf
90%
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%90%
tr
ton
90%
10%
toff
td(off) tf
90%
Figure 2 Switching Waveforms
TJ-Junction Temperature(°C )
Figure 3. Power Dissipation
PD Power(W)
TJ-Junction Temperature(°C )
Figure 4. Drain Current
ID- Drain Current (A）
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5. Output Characteristics
ID- Drain Current (A)
Figure 6. Drain-Source On-Resistance
Rdson On-Resistance(Ω )
3/7
BSS138
50V N-Channel MOSFET
TJ-Junction Temperature(°C )
Figure 8. Drain-Source On-Resistance
Normalized On-Resistance
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 7. Transfer Characteristics
Vgs Gate-Source Voltage (V)
Figure 9. Rdson vs Vgs
Rdson On-Resistance(Ω )
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 11. Gate Charge
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 10. Capacitance vs Vds
Vsd Source-Drain Voltage (V)
Figure 12. Source- Drain Diode Forward
Is- Reverse Drain Current (A)
4/7
BSS138
50V N-Channel MOSFET
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14. Normalized Maximum Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Figure 13. Safe Operation Area
ID- Drain Current (A)
5/7
BSS138
50V N-Channel MOSFET
SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm)
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified.
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Symbol
Dimensions in Millimeters
MIN.
MAX.
A
0.900
1.150
A1
0.000
0.100
A2
0.900
1.050
b
0.300
0.500
c
0.080
0.150
D
2.800
3.000
E
1.200
1.400
E1
2.250
2.550
e
0.950TYP
e1
1.800
2.000
L
0.550REF
L1
0.300
0.500
θ
0°
8°
6/7
BSS138
50V N-Channel MOSFET
SOT-23 Tape and Reel Information Dimensions in Millimeters (UNIT:mm)
NOTES：
1. All dimensions are in millimeters.
2. 10 Sprocket hole pitch cumulative tolerance ±0.20 MAX.
3. General tolerance ±0.25 .
7/7
www.goodarksemi.com Doc.USBSS138xSS3.2
Apr.2019
BSS138
50V N-Channel MOSFET
