Data Sheet No. 2N5153L Generic Part Number: 2N5153L Type 2N5153L Geometry 9702 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/545 Features: * * * * Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/545 which Semicoa meets in all cases. TO-5 Maximum Ratings o TC = 25 C unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 100 V Emitter-Base Voltage VEBO 5.5 V Collector Current, Continuous IC 2 A Collector Current, PW < 8.3 ms, < 1% duty cycle IC 10 A 15 mJ Watt o mW/ C Reverse Pulse Energy Power Disipation TA = 25oC ambient o Derate above 25 C PT 1.0 5.7 Operating Junction Temperature TJ -65 to +200 o TSTG -65 to +200 o Storage Temperature C C Data Sheet No. 2N5153L Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 mA, IB = 0, pulsed Base-Emitter Cutoff Current VEB = 4 V, IC = 0 VEB = 5.5 V, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, VBE = 0 VCE = 100 V, VBE = 0 VCE = 40 V, IB = 0 o VCE = 60 V, VBE = +2 V, TC = 150 C ON Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 5 V IC = 2.5 A, VCE = 5 V, pulsed IC = 5.0 A, VCE = 5 V, pulsed IC = 2.55 A, VCE = 5 V pulsed, TC = -55oC Base-Emitter Voltage, Nonsaturted VCE = 5 V, IC = 2.5 A, pulsed Base-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Collector-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 500 mA, f = 10 MHz Common Emitter, Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 100 mA, f = 1 kHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz Switching Time Delay Time IC = 5 A, IB1 = 500 mA Storage Time IB2 = -500 mA Fall Time VBE(off) = 3.7 V Turn-Off Time RL = 6 ohms Symbol Min Max Unit V(BR)CBO 80 --- V IEBO1 IEBO2 ----- 1.0 1.0 A mA ICES1 ICES2 ICEO ------- 1.0 1.0 50 A mA A ICEX --- 500 A Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 50 70 40 25 --200 ----- --------- VBE --- 1.45 V dc VBE(sat)1 VBE(sat)2 ----- 1.45 2.2 V dc V dc VCE(sat)1 VCE(sat)2 ----- 0.75 1.5 V dc V dc Symbol Min Max Unit |hfe| 7.0 --- --- hfe 50 --- --- COBO --- 250 pF Symbol Min Max Unit tON --- 0.5 s ts --- 1.4 s tf --- 0.5 s tOFF --- 1.5 s