Type 2N5153L
Geometry 9702
Polarity PNP
Qual Level: JAN - JANS
Data Sheet No. 2N5153L
Generic Part Number:
2N5153L
REF: MIL-PRF-19500/545
Features:
Silicon power transistor for use in
high speed switching applications.
Housed in a TO-5 case.
Also available in chip form using
the 9702 chip geometry.
The Min and Max limits shown are
per MIL-PRF-19500/545 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5.5 V
Collector Current, Continuous IC2 A
Collector Current, PW < 8.3 ms, < 1% duty cycle IC10 A
Reverse Pulse Energy 15 mJ
Power Disipation TA = 25oC ambient 1.0 Watt
Derate above 25oC 5.7 mW/oC
Operating Junction Temperature TJ-65 to +200 oC
Storage Temperature TSTG -65 to +200 oC
Maximum Ratings
TC = 25oC unless otherwise specified
PT
TO-5
Data Sheet No. 2N5153L
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 100 mA, I
B
= 0, pulsed
Base-Emitter Cutoff Current
VEB = 4 V, IC = 0 IEBO1 --- 1.0 µA
VEB = 5.5 V, IC = 0 IEBO2 --- 1.0 mA
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 0 ICES1 --- 1.0 µA
VCE = 100 V, VBE = 0 ICES2 --- 1.0 mA
VCE = 40 V, IB = 0 ICEO --- 50 µA
VCE = 60 V, VBE = +2 V, TC = 150
o
CICEX --- 500 µA
TC = 25oC unless otherwise specified
V
V(BR)CBO 80 ---
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5 V
h
FE1
50
---
---
I
C
= 2.5 A, V
CE
= 5 V, pulsed
h
FE2
70
200
---
I
C
= 5.0 A, V
CE
= 5 V, pulsed
h
FE3
40
---
---
I
C
= 2.55 A, V
CE
= 5 V pulsed, T
C
= -55
o
C
h
FE4
25
---
---
Base-Emitter Voltage, Nonsaturted
VCE = 5 V, IC = 2.5 A, pulsed VBE --- 1.45 V dc
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA, pulsed VBE(sat)1 --- 1.45 V dc
IC = 5 A, IB = 500 mA, pulsed VBE(sat)2 --- 2.2 V dc
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA, pulsed VCE(sat)1 --- 0.75 V dc
IC = 5 A, IB = 500 mA, pulsed VCE(sat)2 --- 1.5 V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 5 V, IC = 500 mA, f = 10 MHz
Common Emitter, Small Signal Short Circuit
Forward Current Transfer Ratio
VCE = 5 V, IC = 100 mA, f = 1 kHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
---
|hfe|7.0 ---
COBO --- 250 pF
hfe 50 --- ---
Switching Time
Symbol
Min
Max
Unit
Delay Time
IC = 5 A, IB1 = 500 mA
Storage Time
IB2 = -500 mA
Fall Time
VBE(off) = 3.7 V
Turn-Off Time
RL = 6 ohms
µs
tON --- 0.5
ts--- 1.4 µs
0.5 µs
tOFF --- 1.5 µs
tf---