TO-92 Plastic-Encapsulate Transistors 4 GW 84 ago TO-92 ! 1.EMITTER ! 2.COLLECTOR | 3.BASE 1 2 3 BC369 TRANSISTOR(PNP) FEATURES Pom: 0.625W (Tamb=25'C) lou: -1A Vieryceo: -25 Vv ge junction temperature range Tu,Tstg: -55C to + 150T ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Colfector-base breakdown voltage V(BR)CBO Ic= -100 n A, le=0 -25 Vv Collector-emitter breakdown voltage V(BR)CEO Ic= -10 mA, Ie=0 -20 Vv Emitter-base breakdown voltage ViBR)JEBO le= -100 b A, Ic=0 +45 Vv Collector cut-off current IcBo Ves= -25 V, le=0 -10 BA Emitter cut-off current leBo Vep= -5 V, Ic=0 -10 vA DC current gain hee Vece= -1 V, Ic= -0.5 mA 85 375 Base-emitter saturation voltage VcEsat Ic= -1 A, la=-100 mA -0.5 Vv Base-emitter voltage Vee Ic= -1 A, Vce=-1V -1 Vv Vce= -5 V, c= -10 MA Transition frequency fr 65 MHz f =20MHz Typical Characteristics Typical Pulsed Current Gain vs Collector Current w 8 Voge = 5.0V nN s 3 g 2 Bg hee TYPICAL PULSED CURRENT GAIN 0.4 1 2 i * COLLECTOR CURRENT (A) Qo Q 3 Base-E mitter Saturation Voltage vs Collector Current B =10 2 rep) Vessar- BASE-EMITTER VOLTAGE (V) fo) S 1 10 400 1000 | - COLLECTOR CURRENT (mA) Gain Bandwidth Product vs Collector Current ho a OQ Voce =10V tO 2 Oo _ ou Oo Q o qn o f,- GAIN BANDWIDTH PRODUCT (MHz) 1 10 100 1000 1, - COLLECTOR CURRENT (mA) mcc BC369 Collector-Emitter Saturation Voltage vs Collector Current = oe 2 a S b 2 rn oo 01 0.4 1 3 1, - COLLECTOR CURRENT (A) Voesar COLLECTOR-EMITTER VOLTAGE (V) Base-Emitter ON Voltage vs Collector Current _ oo o 2 b Vop=5.0V Vee- BASE-E MITTER ON VOLTAGE (V) S nN 10 100 1000 tc -COLLECTOR CURRENT (mA) = Power Dissipation vs Ambient Tem perature 700 2 600 th w > Fa) ao Q 8 Qo oS oO P, - POWER DISSIPATION 3 6 Qo 0 25 50 75 100 125 150 TEMPERATURE (C)