a Discrete POWER & Signal FAIRCHILD Technologies ee SEMICONDUCTOR wm PN2907A MMBT2907A PZT2907A SOT-23 B SOT-223 Mark: 2F MMPQ2907 NMT2907 C1 B2 SOT-6 ~ BI Mark: .2B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Abso I ute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units VeceEo Collector-Emitter Voltage 60 Vv Veso Collector-Base Voltage 60 Vv Veo Emitter-Base Voltage 5.0 Vv lo Collector Current - Continuous 800 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. & 1997 Fairchild Semiconductor Corporation VZ0621LZd / LO6ZLINN / ZO6Z2OdINW / VZO62LEIWNIN / VZ062NdElectrical Characteristics PNP General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vipryceo Collector-Emitter Breakdown Voltage | Ip = 10 mA, Iz =0 60 Vv Vipryco Collector-Base Breakdown Voltage lo = 10 pA, Ie = 0 60 Vv VieR)EBO Emitter-Base Breakdown Voltage le=10yA, Ilo =O 5.0 Vv lp Base Cutoff Current Vog = 30 V, Veg = 0.5 V 50 nA loex Collector Cutoff Current Vee = 30 V, Vee = 0.5 V 50 nA loBo Collector Cutoff Current Vog = 50 V, IE =0 0.02 uA Vop = 50 V, le = 0, Ta = 150C 20 uA ON CHARACTERISTICS hee DC Current Gain lo = 0.1 MA, Voce = 10V 75 lo = 1.0 mA, Voe = 10 V 100 lo = 10 mA, Voe = 10 V 100 Io = 150 mA, Voce = 10 V* 100 300 lo = 500 mA, Voce = 10V* 50 Voesat) Collector-Emitter Saturation Voltage Ico = 150 mA, Ip = 15 mA 0.4 Vv Io = 500 mA, Iz = 50 mA 1.6 Vv Vaeat) Base-Emitter Saturation Voltage Io = 150 mA, |p = 15 mA* 1.3 Vv Io = 500 mA, Iz = 50 mA 2.6 Vv SMALL SIGNAL CHARACTERISTICS (except MMPQ2907 and NMT2907) fr Current Gain - Bandwidth Product lo = 50 mA, Vce = 20 V, 200 MHz f = 100 MHz Cobo Output Capacitance Vep = 10 V, Ie =0, 8.0 pF f = 100 kHz Cibo Input Capacitance Veg = 2.0 V, 1, =0, 30 pF f = 100 kHz SWITCHING CHARACTERISTICS (except MMPQ2907 and NMT2907) ton Turn-on Time Voc = 30 V, Io = 150 mA, 45 ns ty Delay Time lp) = 15 mA 10 ns tr Rise Time 40 ns toft Turn-off Time Voc = 6.0 V, Ip = 150 MA 100 ns ts Storage Time lay =lp2 = 15 MA 80 ns t Fall Time 30 ns * Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% Spice Model PNP (Is=650.6E-18 Xtix3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 No=2 Isc=0 Ikr=0 Ro=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fe=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p Itf=.65 Vti=5 Xti=1.7 Rb=10) VZ0621LZd / LO6ZLINN / ZO6Z2OdINW / VZO62LEIWNIN / VZ062NdThermal Characteristics PNP General Purpose Amplifier (continued) TA = 25C unless otherwise noted Symbol Characteristic Max Units PN2907A *PZT2907A Pp Total Device Dissipation 625 1,000 mw Derate above 25C 5.0 8.0 mW/C Rac Thermal Resistance, Junction to Case 83.3 C/W Raa Thermal Resistance, Junction to Ambient 200 125 C/W Symbol Characteristic Max Units **MMBT2907A | MMPQ2907 Pp Total Device Dissipation 350 1,000 mw Derate above 25C 2.8 8.0 mWw/C Rosa Thermal Resistance, Junction to Ambient 357 C/W Effective 4 Die 125 C/W Each Die 240 C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 em?. ** Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 300 200 100 hee - TYPICAL PULSED CURRENT GAIN 0.3 1 3 10 30 100 300 Ic - COLLECTOR CURRENT (mA) Veegar> COLLECTOR EMITTER VOLTAGE (V) a 2 iy we B 2 Collector-Emitter Saturation Voltage vs Collector Current B =10 - 40C Qo 10 100 500 | ,- COLLECTOR CURRENT (mA) VZ0621LZd / LO6ZLINN / ZO6Z2OdINW / VZO62LEIWNIN / VZ062NdPNP General Purpose Amplifier (continued) Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current Veesar> BASE EMITTER VOLTAGE (V) 1 10 100 500 |c- COLLECTOR CURRENT (mA) Collector-Cutoff Current vs. Ambient Temperature 100 Vog= 35V Icgor COLLECTOR CURRENT (nA) 25 50 75 100 125 T,- AMBIENT TEMPERATURE (C) Switching Times vs Collector Current 250 le le1= Ip=75 np o oO Veg = 15V ao oO TIME (nS) Qo ao oO 10 100 1000 | - COLLECTOR CURRENT (mA) e n o io CAPACITANCE (pF) 500 400 wo o oO TIME (nS) re) 3 6 o oO Vacon - BASE EMITTER ON VOLTAGE (V) Qo oho Oo Base Emitter ON Voltage vs Collector Current Voce =5V 1 10 25 I- COLLECTOR CURRENT (mA) Input and Output Capacitance vs Reverse Bias Voltage 1 -1 -10 - 50 REVERSE BIAS VOLTAGE (V) Turn On and Turn Off Times vs Collector Current lc ley =|po=5 Veg = 15V ton 10 100 1000 | - COLLECTOR CURRENT (mA) VZ0621LZd / LO6ZLINN / ZO6Z2OdINW / VZO62LEIWNIN / VZ062NdPNP General Purpose Amplifier (continued) Typical Characteristics (continued) Rise Time vs Collector Power Dissipation vs and Turn On Base Currents Ambient Temperature a oO SOT-223 np oO 0.75 ao iy a nm P, - POWER DISSIPATION (W) a Ip, - TURN ON BASE CURRENT (mA) 100 500 0 | - COLLECTOR CURRENT (mA) o 0 256 50 76 100 125 150 TEMPERATURE Cc) Test Circuits 1 1 I I > 200ns I 1 >" : 200ns*< FIGURE 2: Saturated Turn-Off Switching Time Test Circuit VZ0621LZd / LO6ZLINN / ZO6Z2OdINW / VZO62LEIWNIN / VZ062NdTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. 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