DATA SH EET
Product specification
Supersedes data of 1999 Apr 08 2004 Dec 06
DISCRETE SEMICONDUCTORS
BCV29; BCV49
NPN Darlington transistors
b
ook, halfpage
M3D109
2004 Dec 06 2
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
FEATURES
•High current (max. 500 mA)
•Low voltage (max. 60 V)
•High DC current gain (min. 20000).
APPLICATIONS
•Preamplifier input applications.
DESCRIPTION
NPN small-signal Darlington transistor in a surface mount
SOT89 plastic package. PNP complements: BCV28 and
BCV48.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BCV29 EF
BCV49 EG
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym087
TR1 TR2
1
23
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BCV29 SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads SOT89
BCV49
2004 Dec 06 3
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BCV29 −40 V
BCV49 −80 V
VCES collector-emitter voltage VBE =0V
BCV29 −30 V
BCV49 −60 V
VEBO emitter-base voltage open collector −10 V
ICcollector current (DC) −500 mA
ICM peak collector current −1A
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −1.3 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 96 K/W
Rth(j-s) thermal resistance from junction to soldering point 16 K/W
2004 Dec 06 4
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current
BCV29 IE= 0 A; VCB =30V −−100 nA
BCV49 IE= 0 A; VCB =60V −−100 nA
IEBO emitter-base cut-off current IC= 0 A; VEB =10V −−100 nA
hFE DC current gain VCE = 5 V; see Fig.2
BCV29 IC= 1 mA 4000 −−
IC= 10 mA 10000 −−
IC= 100 mA 20000 −−
IC= 500 mA 4000 −−
DC current gain VCE = 5 V; see Fig.2
BCV49 IC= 1 mA 2000 −−
IC= 10 mA 4000 −−
IC= 100 mA 10000 −−
IC= 500 mA 2000 −−
VCEsat collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1V
VBEsat base-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1.5 V
VBEon base-emitter on-state voltage IC= 10 mA; VCE =5V −−1.4 V
fTtransition frequency IC= 30 mA; VCE = 5 V; f = 100 MHz −220 −MHz
2004 Dec 06 5
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
60000
80000
20000
40000
MGD837
10−11IC (mA)
hFE
10 102 103
VCE =2V.
2004 Dec 06 6
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 99-09-13
04-08-03
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2004 Dec 06 7
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers usingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Contact information
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Printed in The Netherlands R75/06/pp8 Date of release: 2004 Dec 06 Document order number: 9397 750 13863
