DRAM Flash - SSD MCP Storage Displays PRODUCT SELECTION GUIDE contacts DISPLAYS, MEMORY AND STORAGE 1H 2015 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers - from ultrabooks to powerful servers - and in a wide range of handheld devices such as smartphones and tablets. Samsung is also a leader in TV displays. In addition, Samsung provides the industry's widest line of storage products from the consumer to enterprise levels. These include optical disc drives as well as flash storage, such as Solid State Drives, and a range of embedded flash storage products. Markets DRAM SSD FLASH ASIC MOBILE/WIRELESS NOTEBOOK PCs/ ULTRABOOKSTM DESKTOP PCs/ WORKSTATIONS SERVERS NETWORKING/ COMMUNICATIONS CONSUMER ELECTRONICS To access our online sales portal, visit: https://smarttools.ssi.samsung.com www.samsung.com/us/oem-solutions LOGIC TFT/LCD ODD DRAM TABLE OF CONTENTS DRAM PAGES 4-13 samsung.com/dram * DDR4 SDRAM * Mobile DRAM * DDR3 SDRAM * Ordering Info * DDR2 SDRAM * Graphics DRAM FLASH - SSD PAGES 14-15 samsung.com/flash * eMMC * Solid State Drives (SSD) MULTI-CHIP PACKAGEs PAGES 16-17 samsung.com/mcp * eMMC + LPDDR3 storage PAGES 18-20 samsung.com/flash-ssd tsstodd.com * Solid State Drives * Optical Disc Drives Displays PAGES 21-22 samsungdisplay.com * Public Information Display (PID) Product Classification * SNB/UNB * Indoor PID * * * * E-Board Outdoor PID Tablets Monitors ContactS PAGES 23-25 samsung.com/semiconductor/sales-network * Sales Representatives and Distributors * To access our online sales portal, visit: https://smarttools.ssi.samsung.com // DDR4 SDRAM COMPONENTS Density Voltage 4Gb 1.2V 8Gb 1.2V Organization 1G x 4 512M x 8 256M x 16 2G x 4 1G x 8 512M x16 Part Number K4A4G045WD-BCRC/PB K4A4G085WD-BCRC/PB K4A4G165WD-BCRC/PB K4A8G045WB-BCRC/PB K4A8G085WB-BCRC/PB K4A8G165WB-BCRC/PB # Pins-Package 78 Ball -FBGA 78 Ball -FBGA 96 Ball -FBGA 78 ball FBGA 78 ball FBGA 96 Ball -FBGA Compliance Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free, Flip Chip Speed (Mbps) 2400/2133 2400/2133 2400/2133 2400/2133 2400/2133 2400/2133 Dimensions 7.5x11mm 7.5x11mm 7.5x13.3mm 7.5x11mm 7.5x11mm 7.5x13.3mm Production Now Now Now Now Now CS: '15, 1Q DDR4 SDRAM REGISTERED MODULES Density 8GB 16GB 32GB Voltage 1.2V 1.2V 1.2V Organization 1G x 72 2G x 72 4G x 72 64GB TSV 1.2V 8G x 72 Notes: DDR4 4Gb based 0 = IDT 0 = IDT 0 = IDT 0 = IDT DDR4 8Gb based Part Number Composition Compliance Speed (Mbps) Ranks Production M393A1G40DB0-CPB 4Gb (1G x4) * 18 Lead Free & Halogen Free, Flip Chip 2133 1 Now M393A1G40DB1-CRC 4Gb (1G x4) * 18 Lead Free & Halogen Free, Flip Chip 2400 1 CS: '15, Mar M393A1G43DB0-CPB 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2133 2 Now M393A1G43DB1-CRC 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, Apr M393A2G40DB0-CPB 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 2133 2 Now M393A2G40DB1-CRC 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, Feb M393A2K40BB0-CPB 8Gb (2G x4) * 18 Lead Free & Halogen Free, Flip Chip 2133 1 Now M393A2K40BB1-CRC 8Gb (2G x4) * 18 Lead Free & Halogen Free, Flip Chip 2400 1 1Q'15 M393A2K43BB1-CPB/CRC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 2 CS: '15, Apr M393A4K40BB0-CPB 8Gb (2G x4) * 36 Lead Free & Halogen Free, Flip Chip 2133 2 Now M393A4K40BB1-CRC 8Gb (2G x4) * 36 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, Mar M393A8G40D40-CRB 4Gb (4G x4) * 36 Lead Free & Halogen Free, 4High TSV 2133 8 Now M393A8G40D41-CTC 4Gb (4G x4) * 36 Lead Free & Halogen Free, 4High TSV 2400 8 CS: '15, 2Q 2 = Montage 4 = Montage 4 = Montage 4 = Montage PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) RB = DDR4-2133(17-15-15) TC = DDR4-2400(19-17-17) RB = DDR4-2400(17-15-15) TC = DDR4-2400(19-17-17) DDR4 SDRAM LOAD REDUCED MODULES Density Voltage Organization 32GB 1.2V 4G x 72 64GB 1.2V 8G x 72 Notes: DDR4 4Gb based DDR4 8Gb based 0 = IDT 5 = IDT 0 = IDT 5 = IDT Part Number Composition Compliance Speed (Mbps) Ranks Production M386A4G40DM0-CPB 4Gb DDP (2Gx4) * 36 Lead Free & Halogen Free, DDP 2133 4 Now M386A4G40DM1-CRC 4Gb DDP (2Gx4) * 36 Lead Free & Halogen Free, DDP 2400 4 CS: '15, May M386A8K40BM1-CPB 8Gb DDP (4Gx4) * 36 Lead Free & Halogen Free, DDP 2133 4 CS: '15, Mar M386A8K40BM1-CRC 8Gb DDP (4Gx4) * 36 Lead Free & Halogen Free, DDP 2400 4 CS: '15, May 2 = Montage 4 = Montage 4 = Montage 4 = Montage PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) DDR4 SDRAM VLP REGISTERED MODULES Density Voltage Organization 16GB 1.2V 2G x 72 32GB 1.2V 4G x 72 Part Number Composition Compliance Speed (Mbps) Ranks Production M392A2G40DM0-CPB 4Gb DDP (2G x4) * 18 Lead Free & Halogen Free, DDP 2133 2 Now M392A2K43BB1-CPB/RC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 2 CS: '15, July M392A4K40BM0-CPB/RC 8Gb DDP (4G x4) * 18 Lead Free & Halogen Free, DDP 2133/2400 2 CS: '15, Apr DDR4 SDRAM UNBUFFERED MODULES Density 4GB 8GB Voltage 1.2V Organization 512M x 64 1.2V 1G x 64 16GB 1.2V 2G x 64 Notes: PB = DDR4-2133(15-15-15) 4 DDR4 SDRAM Part Number Composition Compliance Speed (Mbps) Ranks Production M378A5143DB0-CPB 4Gb (512M x8) *8 Lead Free & Halogen Free 2133 1 Now M378A5143DB1-CRC 4Gb (512M x8) *8 Lead Free & Halogen Free 2400 1 CS: '15, Apr M378A1G43DB0-CPB 4Gb (512M x8) *16 Lead Free & Halogen Free 2133 2 Now M378A1G43DB1-CRC 4Gb (512M x8) *16 Lead Free & Halogen Free 2400 2 CS: '15, Apr M378A2K43BB1-CPB/CRC 8Gb (1G x8) * 16 Lead Free & Halogen Free 2133/2400 2 CS: '15, Feb RC = DDR4-2400(17-17-17) 1H 2015 samsung.com/dram samsung.com/dram Density Voltage Organization 8GB 1.2V 1G x72 16GB 1.2V 2G x72 Notes: PB = DDR4-2133(15-15-15) Part Number Composition Compliance M391A1G43DB0-CPB 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2133 Speed (Mbps) Ranks Production 2 Now M391A1G43DB1-CRC 4Gb (512M x8) * 18 M391A2K43BB1-CPB/CRC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, May Lead Free & Halogen Free, Flip Chip 2133/2400 2 CS: '15, Mar Part Number M471A5143DB0-CPB Composition Compliance Speed (Mbps) Ranks Production 4Gb (512M x8) * 8 Lead Free & Halogen Free 2133 1 Now M471A5143DB1-CRC 4Gb (512M x8) * 8 Lead Free & Halogen Free M471A1G43DB0-CPB 4Gb (512M x8) * 16 Lead Free & Halogen Free 2400 1 CS: '15, Apr 2133 2 M471A1G43DB1-CRC 4Gb (512M x8) * 16 Lead Free & Halogen Free Now 2400 2 CS: '15, Apr M471A2K43BB1-CPB/CRC 8Gb (1G x8) * 16 Lead Free & Halogen Free 2133/2400 2 CS: '15, Feb Speed (Mbps) RC = DDR4-2400(17-17-17) DDR4 SDRAM SODIMM MODULES Density 4GB 8GB Voltage 1.2V Organization 512M x 64 1.2V 1G x 64 16GB 1.2V 2G x 64 Notes: PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) DDR4 SDRAM ECC SODIMM MODULES Density Voltage Organization 8GB 1.2V 1G x 72 16GB 1.2V 2G x 72 Part Number Composition Compliance Ranks Production M474A1G43DB0-CPB 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2133 2 Now M474A1G43DB1-CRC 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, May M474A2K43BB1-CPB/RC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 2 CS: '15, Mar DDR3 SDRAM REGISTERED MODULES Density 8GB 16GB 8GB 16GB Voltage 1.5V 1.5V 1.35V 1.35V Composition Compliance Speed (Mbps) Ranks Production M393B1K70QB0-CMA (08/09) 2Gb (512M x4) * 36 Lead Free & Halogen Free, Flip Chip 1866 2 Now M393B1G70QH0-CMA (08/09) 4Gb (1G x4) * 18 Lead Free & Halogen Free 1866 1 Now M393B1G73QH0-CMA (08/09) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1866 2 Now M393B2G70QH0-CMA (08/09) 4Gb (1G x4) * 36 Lead Free & Halogen Free 1866 2 Now M393B2G70DB0-CMA (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1866 2 Now M393B2G70EB0-CMA (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1866 2 Now M393B1K70QB0-YK0 (08/09) 2Gb (512M x4) * 36 Lead Free & Halogen Free, Flip Chip 1600 2 Now M393B1G70QH0-YK0 (08/09) 4Gb (1G x4) * 18 Lead Free & Halogen Free 1600 1 Now M393B2G70QH0-YK0 (08/09) 4Gb (1G x4) * 36 Lead Free & Halogen Free 1600 2 Now M393B2G70DB0-YK0 (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1600 2 Now M393B2G70EB0-YK0 (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1600 2 Now M393B4G70DM0-YH9(02/03) 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free. DDP 1333 4 Now 2 = IDT Alpine 3 = Inphi XV-GS02 F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) Organization Part Number 1G x 72 2G x 72 1G x 72 2G x 72 32GB 1.35V 4G x 72 Notes: 8 = IDT A1 Evergreen 9 = Inphi UVGS02 DDR3 SDRAM Load Reduced REGISTERED MODULES Density 32GB 64GB Notes: Voltage 1.35V 1.5V 1.35V 1.5V Organization 4G x 72 8G x 72 3 = Inphi iMB GS02B samsung.com/dram Part Number Composition Compliance Speed (Mbps) Ranks Production M386B4G70DM0-YK0(3/4) 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free, DDP 1600 4 Now M386B4G70DM0-CMA(3/4) 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free, DDP 1866 4 Now M386B8G70DE0-YH9(4) 4Gb QDP (4G x4) * 36 Lead Free & Halogen Free, QDP 1333 8 Now M386B8G70DE0-CK0(4) 4Gb QDP (4G x4) * 36 Lead Free & Halogen Free, QDP 1600 8 Now 4 = Montage C1 1H 2015 DDR3 SDRAM 5 DRAM DDR4 SDRAM ECC UNBUFFERED MODULES DDR3 SDRAM VLP REGISTERED MODULES Density 8GB 16GB Part Number Composition Compliance Speed (Mbps) Ranks Production 1.5V M392B1G70DB0-CMA (03/04) 4Gb (1Gx4) * 18 Lead Free & Halogen Free, Flip Chip 1866 1 Now 1.35V M392B1G70DB0-YK0 (03/04) 4Gb (1Gx4) * 18 Lead Free & Halogen Free, Flip Chip 1600 1 Now M392B1G73DB0-CMA (03/04) 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 1866 2 Now Voltage 1.5V Organization 1G x 72 1.35V M392B1G73DB0-YK0 (03/04) 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 1600 2 Now 1.5V M392B2G70DM0-CMA (03/04) 4Gb DDP (2G x4) * 18 Lead Free & Halogen Free, DDP 1866 2 Now M392B2G70DM0-YK0 (03/04) 4Gb DDP (2G x4) * 18 Lead Free & Halogen Free, DDP 1600 2 Now M392B4G70DE0-YH9 (03/04) 4Gb QDP (4G x4) * 18 Lead Free & Halogen Free, QDP 1333 4 Now 1.35V 2G x 72 32GB 1.35V 4G x 72 Notes: 2 = IDT Alpine 3 = Inphi XV-GS02 K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) DDR3 SDRAM UNBUFFERED MODULES Density Voltage Organization 2GB 1.5V 256M x 64 1.5V 4GB 512M x 64 1.35V 1.5V 8GB 1024M x 64 1.35V Notes: K0 = DDR3-1600 (11-11-11) Part Number Composition Compliance Speed (Mbps) Ranks Production M378B5773QB0-CK0/MA 2Gb (256M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now M378B5173QH0-CK0/MA 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now M378B5173DB0-CK0/MA 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now M378B5173EB0-CK0/MA 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now M378B5173QH0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 2Q'15 M378B5173EB0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 2Q'15 M378B1G73QH0-CK0/MA 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600/1866 2 Now M378B1G73DB0-CK0/MA 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600/1866 2 Now M378B1G73EB0-CK0/MA 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600/1866 2 Now M378B1G73QH0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 2Q'15 M378B1G73EB0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 2Q'15 MA = DDR3-1866 (13-13-13) DDR3 SDRAM UNBUFFERED MODULES (ECC) Density 8GB Notes: Voltage 1.5V 1.35V Organization 1024M x 72 H9 = DDR3-1333 (9-9-9) Part Number Composition Compliance Speed (Mbps) Ranks Production M391B1G73QH0-CMA 4Gb (512M x8) * 18 Lead Free & Halogen Free 1866 2 Now 4Gb (512M x8) * 18 Lead Free & Halogen Free 1600 2 Now M391B1G73QH0-YK0 K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) DDR3 SDRAM SODIMM MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 2GB 1.35V 256M x 64 M471B5674QH0-YK0 4Gb (256M x16) * 4 Lead Free & Halogen Free 1600 1 Now M471B5173QH0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 Now 4GB 1.35V 512M x 64 M471B5173DB0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 Now M471B5173EB0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 Now M471B1G73QH0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 Now M471B1G73DB0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 Now M471B1G73EB0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 Now K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) 8GB 1.35V 1024M x 64 Notes: H9 = DDR3-1333 (9-9-9) DDR3 SDRAM ECC SODIMM MODULES Density 8GB 6 Voltage 1.5V 1.35V Organization 1024M x 72 Part Number Composition Compliance Speed (Mbps) Ranks Production M474B1G73QH0-CMA 4Gb (512M x8) * 18 Lead Free & Halogen Free 1866 2 Now M474B1G73QH0-YK0 4Gb (512M x8) * 18 Lead Free & Halogen Free 1600 2 Now DDR3 SDRAM & DDR2 SDRAM 1H 2015 samsung.com/dram Density Voltage 1Gb 1.5V 2Gb 8Gb 1.5V 1.5V 1Gb 1.35V 2Gb 1.35V 4Gb 1.35V Organization Part Number # PinsPackage Speed (Mbps) Dimensions 128M x 8 K4B1G0846G-BC(H9/K0/MA) 78 Ball -FBGA 128M x 16 K4B1G1646G-BC(H9/K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600/1866 7.5x11mm Lead Free & Halogen Free, Flip Chip 1333/1600/1866/2133 7.5x13.3mm Now 256M x 8 K4B2G0846Q-BC(K0/MA/NB) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x11mm Now 128M x 16 K4B2G1646Q-BC(K0/MA/NB) 512M x 8 K4B4G0846D-BC(K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x13.3mm Now 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x11mm Now 256M x 16 K4B4G1646D-BC(K0/MA/NB) 512M x 8 K4B4G0846E-BC(K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x13.3mm Now 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x11mm 256M x 16 Now K4B4G1646E-BC(K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x13.3mm Now 512M x 16 K4B8G1646Q-MCK0/MA 96 Ball -FBGA Lead Free & Halogen Free 1600/1866 11x13.3mm Now 128M x 8 K4B1G0846G-BY(H9/K0) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600 7.5x11mm Now 128M x 16 K4B1G1646G-BY(H9/K0) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600 7.5x13.3mm Now 512M x 4 K4B2G0446Q-BYK0 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now 256M x 8 K4B2G0846Q-BYK0/MA 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x11mm Now 128M x 16 K4B2G1646Q-BYK0/MA 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x13.3mm Now 1G x 4 K4B4G0446Q-HYK0 78 Ball -FBGA Lead Free & Halogen Free 1600 10x11mm Now 512M x 8 K4B4G0846Q-HYK0 78 Ball -FBGA Lead Free & Halogen Free 1600 10x11mm Now 256M x 16 K4B4G1646Q-HYK0 96 Ball -FBGA Lead Free & Halogen Free 1600 10x13.3mm Now 1G x 4 K4B4G0446D-BYK0 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now 512M x 8 K4B4G0846D-BYK0 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now 256M x 16 K4B4G1646D-BYK0/MA 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x13.3mm Now 1G x 4 K4B4G0446E-BY(K0/MA) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now 512M x 8 K4B4G0846E-BY(K0/MA) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x11mm Now Compliance Production Now 256M x 16 K4B4G1646E-BY(K0/MA) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x13.3mm Now 512M x 16 K4B8G1646Q-MYK0 96 Ball -FBGA Lead Free & Halogen Free 1600 11x13.3mm Now 8Gb 1.35V Notes: H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) NB = DDR3-2133 (14-14-14) DDR2 SDRAM COMPONENTS Density 512Mb 1Gb Notes: Organization Part Number # Pins-Package Dimensions Package Speed (Mbps) Production 64M x 8 K4T51083QQ-BC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now 32M x 16 K4T51163QQ-BC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now 128M x 8 K4T1G084QG-BC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now 64M x 16 K4T1G164QG-BC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now E6 = DDR2-667 (5-5-5) samsung.com/dram E7 = DDR2-800 (5-5-5) F7 = DDR2-800 (6-6-6) 1H 2015 F8 = DDR2-1066 (7-7-7) Graphics DRAM 7 DRAM DDR3 SDRAM COMPONENTS GRAPHICS DRAM COMPONENTS Type Density Organization 8Gb 256M x 32 4Gb 128M x 32 GDDR5 2Gb 4Gb 64M x 32 256M x 16 gDDR3 2Gb Notes: 128M x 16 Package (1) Speeds (clock cycle - speed bin) Part Number Package VDD/VDDQ Speed Bin (MHz) Production K4G80325FB-HC(04/03/28/25) 170-FCFBGA 1.5V/1.5V 5000/6000/7000/8000 CS: '15,2Q K4G80325FB-HC(04/03/28/25) 170-FCFBGA 1.35V/1.35V 4000/5000/6000/(TBD) CS: '15,2Q K4G41325FC-HC(04/03/*28) 170-FCFBGA 1.5V/1.5V(*1.55V/1.55V) 5000/6000/*7000 Now K4G41325FC-HC(04/03/28) 170-FCFBGA 1.35V/1.35V 4000/5000/5500 Now K4G20325FS-HC(04/03) 170-FBGA 1.5V/1.5V 5000/6000 Now K4G20325FS-HC(04/03) 170-FBGA 1.35V/1.35V 4000/5000 Now K4G20325FD-FC(04/03/*28) 170-FBGA 1.5V/1.5V(*1.6V/1.6V) 5000/6000/*7000 Now K4G20325FD-FC(04/03) 170-FBGA 1.35V/1.35V 4000/5000 Now K4W4G1646E-BC(1A/1B) 96-FCFBGA 1.5V/1.5V 2133/2400 Now K4W4G1646E-BC(1A/1B) 96-FCFBGA 1.35V/1.35V 1866/2133 Now K4W4G1646D-BC(12/11/1A) 96-FCFBGA 1.5V/1.5V 1600/1866/2133 Now K4W4G1646D-BC(1A) 96-FCFBGA 1.35V/1.35V 1866 Now K4W4G1646D-BY(12) 96-FCFBGA 1.35V/1.35V 1600 Now K4W2G1646Q-BC(12/11/1A) 96-FCFBGA 1.5V/1.5V 1600/1866/2133 Now K4W2G1646Q-BC(1A) 96-FCFBGA 1.35V/1.35V 1866 Now K4W2G1646Q-BY(12) 96-FCFBGA 1.35V/1.35V 1600 Now H: FBGA (Halogen Free & Lead Free) (DDR3) B: FCFBGA (Halogen Free & Lead Free) (DDR3) H: FCFBGA (Halogen Free & Lead Free) (GDDR5) F: FBGA (Halogen Free & Lead Free) (GDDR5) 25: 0.25ns (8000Mbps) 28: 0.28ns (7000Mbps) 03: 0.3ns (6000Mbps) 04: 0.4ns (5000Mbps) *HC28 is 1.55V *HC28 is 1.6V 05: 0.5ns (4000Mbps) 1B: 8.3ns (2400Mbps gDDR3) 1A: 1.0ns (2133Mbps gDDR3) 11: 1.1ns (1866Mbps) 12: 1.25ns (1600Mbps) MOBILE DRAM COMPONENTS Type Density Organization Part Number Package Power Production 1CH x 32 K4E8E304EE-EGCE 178-FBGA, 11x11.5, DDP, 1600Mbps 1.8V/1.2V/1.2V Now 1CH x 32 K4E8E304EE-AGCE 168-FBGA, 12x12, DDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3QF1F10EM-AGCE 253-FBGA, 11x11.5, DDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3QF1F10EM-BGCE 216-FBGA, 12x12, DDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3QF1F10EM-FGCE 256-FBGA, 14x14, DDP, 1600Mbps 1.8V/1.2V/1.2V Now 1CH x 32 K4E2E304EE-AGCE 168-FBGA, 12x12, TDP, 1600Mbps 1.8V/1.2V/1.2V Now 1CH x 32 K4E6E304EE-EGCE 178-FBGA, 11x11.5, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 1CH x 32 K4E6E304EE-AGCE 168-FBGA, 12x12, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3QF2F20EM-AGCE 253-FBGA, 11x11.5, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3QF2F20EM-BGCE 216-FBGA, 12x12 PoP, QDP,1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3QF2F20EM-FGCE 256-FBGA, 14x14 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3QF2F20EM-QGCE 216-FBGA, 15x15 PoP, QDP,1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3QF6F60MM-BGCE 216-FBGA, 12x12 PoP, QDP,1600Mbps 1.8V/1.2V/1.2V ES 2CH x 32 K3QF6F60MM-FGCE 256-FBGA, 14x14 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3QF6F60MM-QGCE 216-FBGA, 15x15 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x 32 K3MF9F90MM-MGCE 504-FBGA, 15x15 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 24Gb x 64 K3RG3G30MM-MGCH 366-FBGA, 15x15, QDP, 3200Mbps 1.8V/1.1V/1.1V Now 32Gb x 64 K3RG2G20BM-MGCH 366-FBGA, 15x15, QDP, 3200Mbps 1.8V/1.1V/1.1V ES 8Gb 12Gb LPDDR3 16Gb 24Gb LPDDR4 8 Mobile DRAM 1H 2015 samsung.com/dram 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power Package Type Generation Interface (VDD, VDDQ) Number of Internal Banks DRAM DRAM Type Density Bit Organization 1. Memory (K) 2. DRAM: 4 3. DRAM Type B: DDR3 SDRAM D: GDDR SDRAM G: GDDR5 SDRAM H: DDR SDRAM J: GDDR3 SDRAM M: Mobile SDRAM N: SDDR2 SDRAM S: SDRAM T: DDR SDRAM U: GDDR4 SDRAM V: Mobile DDR SDRAM Power Efficient Address W: SDDR3 SDRAM X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM 4. Density 10: 1G, 8K/32ms 16: 16M, 4K/64ms 26: 128M, 4K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms 68: 768M, 8K/64ms 1G: 1G, 8K/64ms 2G: 2G, 8K/64ms 4G: 4G, 8K/64ms 5. Bit Organization 02: x 2 04: x 4 06: x 4 Stack (Flexframe) 07: x 8 Stack (Flexframe) samsung.com/dram DRAM COMPONENT DRAM ORDERING INFORMATION 08: x 8 15: x 16 (2CS) 16: x 16 26: x 4 Stack (JEDEC Standard) 27: x 8 Stack (JEDEC Standard) 30: x 32 (2CS, 2CKE) 31: x 32 (2CS) 32: x 32 6. # of Internal Banks 2: 2 Banks 3: 4 Banks 4: 8 Banks 5: 16 Banks 7. Interface ( VDD, VDDQ) 2: LVTTL, 3.3V, 3.3V 4: LVTTL, 2.5V, 2.5V 5: SSTL-2 1.8V, 1.8V 6: SSTL-15 1.5V, 1.5V 8: SSTL-2, 2.5V, 2.5V A: SSTL, 2.5V, 1.8V F: POD-15 (1.5V,1.5V) H: SSTL_2 DLL, 3.3V, 2.5V M: LVTTL, 1.8V, 1.5V N: LVTTL, 1.5V, 1.5V P: LVTTL, 1.8V, 1.8V Q: SSTL-2 1.8V, 1.8V R: SSTL-2, 2.8V, 2.8V U: DRSL, 1.8V, 1.2V 8. Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation E: 6th Generation F: 7th Generation G: 8th Generation H: 9th Generation I: 10th Generation J: 11th Generation K: 12th Generation M: 1st Generation N: 14th Generation Q: 17th Generation 1H 2015 9. Package Type DDR2 DRAM L: TSOP II (Lead-free & Halogen-free) H: FBGA (Lead-free & Halogen-free) F: FBGA for 64Mb DDR (Lead-free & Halogen-free) 6: sTSOP II (Lead-free & Halogen-free) T: TSOP II N: sTSOP II G: FBGA U: TSOP II (Lead-free) V: sTSOP II (Lead-free) Z: FBGA (Lead-free) DDR2 SDRAM Z: FBGA (Lead-free) J: FBGA DDP (Lead-free) Q: FBGA QDP (Lead-free) H: FBGA (Lead-free & Halogen-free) M: FBGA DDP (Lead-free & Halogen-free) E: FBGA QDP (Lead-free & Halogen-free) T: FBGA DSP (Lead-free & Halogen-free, Thin) DDR3 SDRAM Z: FBGA (Lead-free) H: FBGA (Halogen-free & Lead-free) Graphics Memory Q: TQFP U: TQFP (Lead Free) G: 84/144 FBGA V: 144 FBGA (Lead Free) Z: 84 FBGA (Lead Free) T: TSOP L: TSOP (Lead Free) A: 136 FBGA B: 136 FBGA (Lead Free) H: FBGA (Hologen Free & Lead Free) E: 100 FBGA (Hologen Free & Lead Free) SDRAM L TSOP II (Lead-free & Halogen-free) N: STSOP II T: TSOP II U: TSOP II (Lead-free) V: sTSOP II (Lead-free) DRAM Ordering Information 9 COMPONENT DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power Package Type Generation Interface (VDD, VDDQ) Number of Internal Banks DRAM DRAM Type Density Bit Organization XDR DRAM J: BOC(LF) P: BOC Mobile DRAM Leaded/Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X/Z: 54balls BOC Mono J/V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.8pitch S/D: 90balls FBGA Monolithic (11mm x 13mm) F/H: Smaller 90balls FBGA Mono Y/P: 54balls CSP DDP M/E: 90balls FBGA DDP 10. Temp & Power - COMMON (Temp, Power) C: Commercial, Normal (0'C - 95'C) & Normal Power C: (Mobile Only) Commercial (-25 ~ 70'C), Normal Power J: Commercial, Medium L: Commercial, Low (0'C - 95'C) & Low Power L: (Mobile Only) Commercial, Low, i-TCSR F: Commercial, Low, i-TCSR & PASR & DS E: Extended (-25~85'C), Normal N: Extended, Low, i-TCSR G: Extended, Low, i-TCSR & PASR & DS I: Industrial, Normal (-40'C - 85'C) & Normal Power P: Industrial, Low (-40'C - 85'C) & Low Power H: Industrial, Low, i-TCSR & PASR & DS 11. Speed (Wafer/Chip Biz/BGD: 00) DDR SDRAM CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) B3: DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3) *1 A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3) B0: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3) Note 1: "B3" has compatibility with "A2" and "B0" 10 DRAM Ordering Information DDR2 SDRAM CC: DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3) D5: DDR2-533 (266MHz @ CL=4, tRCD=4, tRP=4) E6: DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5) F7: DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6) E7: DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5) DDR3 SDRAM F7: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6) F8: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7) G8: DDR3-1066 (533MHz @ CL=8, tRCD=8, tRP=8) H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11) MA: DDR3-1866 (933MHz @ CL=13, tRCD=13, tRP=13) NB: DDR3-2133 (1067MHz @ CL=14, tRCD=14, tRP=14) Graphics Memory 18: 1.8ns (550MHz) 04: 0.4ns (2500MHz) 20: 2.0ns (500MHz) 05: 0.5ns (2000MHz) 22: 2.2ns (450MHz) 5C: 0.56ns (1800MHz) 25: 2.5ns (400MHz) 06: 0.62ns (1600MHz) 2C: 2.66ns (375MHz) 6A: 0.66ns (1500MHz) 2A: 2.86ns (350MHz) 07: 0.71ns (1400MHz) 33: 3.3ns (300MHz) 7A: 0.77ns (1300MHz) 36: 3.6ns (275MHz) 08: 0.8ns (1200MHz) 40: 4.0ns (250MHz) 09: 0.9ns (1100MHz) 45: 4.5ns (222MHz) 1 : 1.0ns (1000MHz) 50/5A: 5.0ns (200MHz) 1 : 1.1ns (900MHz) 55: 5.5ns (183MHz) 12: 1.25ns (800MHz) 60: 6.0ns (166MHz) 14: 1.4ns (700MHz) 16: 1.6ns (600MHz) SDRAM (Default CL=3) 50: 5.0ns (200MHz CL=3) 60: 6.0ns (166MHz CL=3) 67: 6.7ns 75: 7.5ns PC133 (133MHz CL=3) XDR DRAM A2: 2.4Gbps, 36ns, 16Cycles B3: 3.2Gbps, 35ns, 20Cycles C3: 3.2Gbps, 35ns, 24Cycles C4: 4.0Gbps, 28ns, 24Cycles DS: Daisychain Sample Mobile-SDRAM 60: 166MHz, CL 3 75: 133MHz, CL 3 80: 125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3 15: 66MHz, CL 2 & 3 Mobile-DDR C3: 133MHz, CL 3 C2: 100MHz, CL 3 C0: 66MHz, CL 3 Note: All Lead-free and Halogen-free products are in compliance with RoHS 1H 2015 samsung.com/dram 1 2 3 4 5 6 7 8 9 10 11 12 13 M X XX T XX X X X X X X XX X AMB Vendor Speed Temp & Power PCB Revision Package Generation SAMSUNG Memory DIMM Data bits DRAM Component Type Depth Number of Banks Bit Organization 1. Memory Module: M 2. DIMM Type 3: DIMM 4: SODIMM 3. Data bits 12: x 72 184pin Low Profile Registered DIMM 63: x 63 PC100/PC133 SODIMM with SPD for 144pin 64: x 64 PC100/PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x 64 Unbuffered DIMM with SPD for 144pin/168pin (Intel/JEDEC) 68: x 64 184pin Unbuffered DIMM 70: x 64 200pin Unbuffered SODIMM 71: x 64 204pin Unbuffered SODIMM 74: x 72/ECC Unbuffered DIMM with SPD for 168pin (Intel/JEDEC) 77: x 72/ECC PLL + Register DIMM with SPD for 168pin (Intel PC100) 78: x 64 240pin Unbuffered DIMM 81: x 72 184pin ECC unbuffered DIMM 83: x 72 184pin Registered DIMM 90: x 72/ECC PLL + Register DIMM 91: x 72 240pin ECC unbuffered DIMM 92: x 72 240pin VLP Registered DIMM 93: x 72 240pin Registered DIMM 95: x 72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133) 4. DRAM Component Type B: DDR3 SDRAM (1.5V VDD) L: DDR SDRAM (2.5V VDD) S: SDRAM T: DDR2 SDRAM (1.8V VDD) 5. Depth 9.Package 09: 8M (for 128Mb/512Mb) 17: 16M (for 128Mb/512Mb) 16: 16M 28: 128M 29: 128M (for 128Mb/512Mb) 32: 32M 33: 32M (for 128Mb/512Mb) 51: 512M 52: 512M (for 512Mb/2Gb) 56: 256M 57: 256M (for 512Mb/2Gb) 59: 256M (for 128Mb/512Mb) 64: 64M 65: 64M (for 128Mb/512Mb) 1G: 1G 1K: 1G (for 2Gb) 6. # of Banks in Comp. & Interface 1: 4K/64mxRef., 4Banks & SSTL-2 2 : 8K/64ms Ref., 4Banks & SSTL-2 2: 4K/64ms Ref., 4Banks & LVTTL (SDR Only) 5: 8K/64ms Ref., 4Banks & LVTTL (SDR Only) 5: 4Banks & SSTL-1.8V 6: 8Banks & SSTL-1.8V 7. Bit Organization 0: x 4 3: x 8 4: x16 6: x 4 Stack (JEDEC Standard) 7: x 8 Stack (JEDEC Standard) 8: x 4 Stack 9: x 8 Stack 8.Generation A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. M: 1st Gen. Q: 17th Gen. samsung.com/dram DRAM MODULE DRAM ORDERING INFORMATION 1H 2015 E: FBGA QDP (Lead-free & Halogen-free) G: FBGA H: FBGA (Lead-free & Halogen-free) J: FBGA DDP (Lead-free) M: FBGA DDP (Lead-free & Halogen-free) N: sTSOP Q: FBGA QDP (Lead-free) T: TSOP II (400mil) U: TSOP II (Lead-Free) V: sTSOP II (Lead-Free) Z: FBGA (Lead-free) 10. PCB Revision 0: Mother PCB 1: 1st Rev 2: 2nd Rev. 3: 3rd Rev. 4: 4th Rev. A: Parity DIMM S: Reduced PCB U: Low Profile DIMM 11. Temp & Power C: Commercial Temp. (0C ~ 95C) & Normal Power L: Commercial Temp. (0C ~ 95C) & Low Power 12. Speed CC: (200MHz @ CL=3, tRCD=3, tRP=3) D5: (266MHz @ CL=4, tRCD=4, tRP=4) E6: (333MHz @ CL=5, tRCD=5, tRP=5) F7: (400MHz @ CL=6, tRCD=6, tRP=6) E7: (400MHz @ CL=5, tRCD=5, tRP=5) F8: (533MHz @ CL=7, tRCD=7, tRP=7) G8: (533MHz @ CL=8, tRCD=8, tRP=8) H9: (667MHz @ CL=9, tRCD=9, tRP=9) K0: (800MHz @ CL=10, tRCD=10, tRP=10) 7A: (133MHz CL=3/PC100 CL2) 13. AMB Vendor for FBDIMM 0, 5: Intel 1, 6, 8: IDT 9: Montage Note: All Lead-free and Halogen-free products are in compliance with RoHS DRAM Ordering Information 11 DDR4 SDRAM MODULE ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 12 M X XX A XX X X X X X X XX Speed Temp & Power PCB Revision Package Component Revision Memory Module DIMM Type Data bits DRAM Component Type Depth # of Banks in Comp. & Interface Bit Organization 1. Memory Module: M 6. # of Banks in Comp. & Interface 2. DIMM Type 3: R/LRDIMM 4: SODIMM 4: 16Banks & POD-1.2V 7. Bit Organization 74: x 72 260pin SODIMM 86: x 72 288pin Load Reduced DIMM 93: x 72 288pin Registered DIMM 8. Component Revision 4. DRAM Component Type A: DDR4 SDRAM (1.2V VDD) 5.Depth 1G: 1G 2G: 2G 4G: 4G 8G: 8G 1K: 1G (for 8Gb) 2K: 2G (for 8Gb) 12 DDR4 SDRAM Module Ordering Information B: FBGA (Halogen-free & Lead-free, Flip Chip) M: FBGA (Halogen-free & Lead-free, DDP) 10.PCB Revision 0: x 4 3: x 8 3. Data bits 9.Package M: 1st Gen. A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. 0: None 1: 1st Rev. 2: 2nd Rev. 3: 3rd Rev. 4: 4th Rev. 11.Temp & Power C: Commercial Temp. (0C ~ 85C) & Normal Power 12.Speed PB: DDR4-2133 (1066MHz @ CL=15, tRCD=15, tRP=15) 1H 2015 samsung.com/dram 1 2 3 4 5 6 7 8 9 10 11 K 4 A XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (Vdd, Vddq) #of Internal Banks Samsung Memory DRAM DRAM Type Density Bit Organization 1. Samsung Memory: K 2. DRAM: 4 3. DRAM Type A: DDR4 SDRAM 4.Density 4G: 4Gb 8G: 8Gb 5. Bit Organization 04: x 4 08: x 8 samsung.com/dram DRAM DDR4 SDRAM MEMORY ORDERING INFORMATION 6. # of Internal Banks 5: 16Banks 7. Interface (Vdd, Vddq) W: POD (1.2V, 1.2V) 8.Revision M: 1st Gen. A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. H: 9th Gen. 1H 2015 9. Package Type B: FBGA (Halogen-free & Lead-free, Flip Chip) M: FBGA (Halogen-free & Lead-free, DDP) 10.Temp & Power C: Commercial Temp. (0C ~ 85C) & Normal Power 11.Speed PB: DDR4-2133 (1066MHz @ CL=15, tRCD=15, tRP=15) RC: DDR4-2400 (1200MHz @ CL=17, tRCD=17, tRP=17) DDR4 SDRAM Memory Ordering Information 13 New 10nm-class eMMC MAINSTREAM eMMC Density Flash MMC* Part Number Seq R/W Perf (MB/s) Random R/W IOPS Package Size (mm) Status 8GB 64Gb*1 5 KLM8G1WEPD-B0310** 140/8 5000/600 11.5 x 13.0 x 0.8 MP 16GB 64Gb*2 5 KLMAG2WEPD-B0310** 150/12 5000/1200 11.5 x 13.0 x 0.8 MP 32GB 64Gb*4 5 KLMBG4WEBD-B0310** 260/45 5500/6000 11.5 x 13.0 x 1.0 MP 64GB 64Gb*8 5 KLMCG8WEBD-B0310** 260/45 5500/6000 11.5 x 13.0 x 1.0 MP 128GB 64Gb*16 5 KLMDGAWEBD-B0310** 250/45 5300/5000 11.5 x 13.0 x 1.4 MP *MMC5.0 is backwards compatible with 4.51 & 4.4 HIGH-PERFORMANCE eMMC Density Flash MMC* Part Number Seq R/W Perf (MB/s) Random R/W IOPS Package Size (mm) Status 4GB 32Gb*1 5 KLM4G1FEPD-B0310** 120/20 3000/700 11.0 x 10.0 x 0.8 MP 8GB 64Gb*1 5 KLM8G1GEND-B0310** 160/25 5000/2500 11.5 x 13.0 x 1.0 MP 16GB 64Gb*2 5 KLMAG2GEND-B0310** 230/50 6000/6000 11.5 x 13.0 x 1.0 MP 32GB 64Gb*4 5 KLMBG4GEND-B0310** 250/100 6000/12000 11.5 x 13.0 x 1.0 MP 64GB 64Gb*8 5 KLMCG8GEND-B0310** 250/100 6000/12000 11.5 x 13.0 x 1.0 MP *MMC5.0 is backwards compatible with 4.51 & 4.41 ***Denotes bucket code for latest firmware patch eMMC Key Features * Industry's fastest eMMC Performance Specs * Fully-managed NAND * Low active and standby power * High density in small form factor (11.5x13mm pkg) 32GB, 64GB Interface Speed Random R/W Sequential R/W * 4GB to 128GB capacities * JEDEC standard MMC 5.0 * Leading edge 10nm-class NAND Flash eMMC 4.5 200MB/s 3500/2000 IOPS 150/50 MB/s eMMC 5.0 400MB/s 6000/12000 IOPS 250/100 MB/s * Device performance condition: x8 Bus, Cache-On mode, without host overhead. Applications eMMC is the most optmized flash solution for tablets and smartphones, as well as applications from eReaders, HD cameras and smart TVs to PNDs, multi-media players and gaming devices. Industry-Leading Smartphone and Tablet Design Specifications * Density: 4GB to 128GB * Flash: 32Gb/64Gb * Package Type: FBGA * Package Size: 11x10mm, 11.5x13mm * eMMC: 4.5/5.0 14 Mainstream eMMC & High-Performance eMMC Simple Block Diagram LTE Modem AP + DRAM (POP) uSD Slot Samsung eMMC 1H 2015 samsung.com/flash SOLID STATE DRIVES (SSD) Drive Name CM851 Interface Form Factor Connector M.2 22x42 mm M.2 SATA III - 6Gb/s No mSATA M.2 22x80 mm PM871 PC Workload M.2 No 2.5" 7mmT Write Endurance Mini PCIe SATA III - 6Gb/s Client PC/ Embedded Power-loss Protection PC Workload SFF-8223 PCIe Gen 3 - SATAe SM951 M.2 22x80 mm M.2 No PC Workload PCIe Gen 3 - NVMe PM863 SATA III - 6Gb/s 2.5" 7mmT SFF-8223 Yes 0.8 DWPD Data Center SM843Tn SATA III - 6Gb/s SV843 SATA III - 6Gb/s PM1633 SAS 3.0 12 Gb/s SM1635 SAS 3.0 12 Gb/s 2.5" 7mmT 2.5" 7mmT 2.5" 15mmT 2.5" 15mmT SFF-8223 SFF-8223 SFF-8680 SFF-8680 Yes Yes Yes Yes 1.8 DWPD 3.6 DWPD 1.0 DWPD 10 DWPD Enterprise 2.5" 15mmT SM1715 Yes 10 DWPD PCIe Gen 3 - NVMe Half-Height Half-Length Add-In Card (HHHL AIC) samsung.com/flash SFF-8639 PCIe Edge-Connector 1H 2015 Yes 10 DWPD Density Part Number 16GB MZAPF016HCDD-00000 32GB MZAPF032HCFV-00000 MZMPF032HCFV-00000 64GB MZMPF064HCGM-00000 128GB MZNLN128HCGR-00000 256GB MZNLN256HCHP-00000 512GB MZNLN512HCJH-00000 128GB MZ7LN128HCHP-00000 256GB MZ7LN256HCHP-00000 512GB MZ7LN512HCHP-00000 128GB MZHPV128HDGM-00000 256GB MZHPV256HDGL-00000 512GB MZHPV512HDGL-00000 128GB MZVPV128HDGM-00000 256GB MZVPV256HDGL-00000 512GB MZVPV512HDGL-00000 120GB MZ7LM120HCFD-00003 240GB MZ7LM240HCGR-00003 480GB MZ7LM480HCHP-00003 960GB MZ7LM960HCHP-00003 1920GB MZ7LM1T9HCJM-00003 3840GB MZ7LM3T8HCJM-00003 120GB MZ7WD120HCFV-00003 240GB MZ7WD240HCFV-00003 480GB MZ7WD480HCGM-00003 480GB MZ7WD480HMHP-00003 960GB MZ7WD960HMHP-00003 480GB MZILS480HCGR-00003 960GB MZILS960HCHP-00003 1920GB MZILS1T9HCHP-00003 3840GB MZILS3T8HCJM-00003 400GB MZIES400HMGR-00003 800GB MZIES800HMHP-00003 1600GB MZIES1T6HMJH-00003 800GB MZWKI800HMHP-00003 1600GB MZWKI1T6HMHP-00003 3200GB MZWKI3T2HMJM-00003 1600GB MZPKI1T6HMHP-00003 3200GB MZPKI3T2HMJM-00003 Solid State Drives FLASH - SSD Drive Type 15 Samsung has a portfolio of eMCP products for a variety of devices, such as mobile phones and tablets. The following illustration shows Samsung's lineup of eMCP memory solutions, which can be deployed in almost any application. Samsung eMCP product suite with different densities and types of Mobile DRAM and eMMC eMCP = eMMC + LPDDR3 64GB 32GB RO M 16GB 8GB 4GB 2GB 4G 6G 8G 12G 16G 24G R AM 16 Multi-Chip Packages 1H 2015 samsung.com/mcp eMCP: eMMC + LPDDR3 Memory eMMC Density DRAM Density/Organization Voltage (eMMC-DRAM) Package 4GB 4Gb (x 32) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 4Gb*2 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 8GB eMMC & MDRAM 16GB 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 4Gb*4 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 6Gb*4 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 4Gb*4 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 6Gb*4 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm MCPs 32GB 6Gb*2 (x 32, 1CH, 2CS) 6Gb*2 (x 32, 1CH, 2CS) samsung.com/mcp 1H 2015 Multi-Chip Packages 17 Samsung Solid State Drives Client Data Center SATA PCIe Enterprise SATA SAS PCIe ENTERPRISE STORAGE SERIES High Redundancy Environments EXTREME PERFORMANCE SERIES Data Cache Environments Mainstream Extreme Performance STANDARD DATA CENTER SERIES ReadIntensive Environments Samsung PM871 Samsung SM951 Samsung PM863 Samsung SV843 Samsung PM1633 Samsung SM1715 2.5", M.2 M.2 2.5" 2.5" 2.5" 2.5" and HHHL 128/256/512 128/256/512 120/240/480/ 960/1920/ 3840 480/960 480/960/ 1920/3840 800/1600/ 3200 Serial ATA 3 (6 Gb/s) PCIe Gen3 x4 Serial ATA 3 (6 Gb/s) Serial ATA 3 (6 Gb/s) SAS 3 (12 Gb/s) PCIe Gen3 x4 1.5 Million Hours 1.5 Million Hours 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours Uncorrectable Bit Error Rate (UBER) 1 in 1015 1 in 1015 1 in 1017 1 in 1017 1 in 1017 1 in 1017 Power Consumption (Active) 250mW 6.5W 4.0W 2.9W 11.0W 25.0W 50mW 50mW 1.3W 1.0W 4.0W 10.0W Random Reads (up to) 97,000 IOPS 90,000 IOPS 99,000 IOPS 88,000 IOPS 180,000 IOPS 750,000 IOPS Random Writes (up to) 90,000 IOPS 70,000 IOPS 18,000 IOPS 14,000 IOPS 15,000 IOPS 185,000 IOPS Sequential Reads (up to) 540 MB/s 2,150MB/s 540 MB/s 530 MB/s 1,100 MB/s 3,000 MB/s Sequential Writes (up to) 510 MB/s 1,500 MB/s 480 MB/s 480 MB/s 1,000 MB/s 2,200 MB/s Client workload Client workload 0.8 DWPD 3.6 DWPD 1 DWPD 10 DWPD Form Factor Capacity (GB) Host Interface MTBF Power Consumption (Idle) Endurance (up to) Physical Dimensions Weight 100 x 70 x 7mm (2.5") 80 x 22 x 3.7mm (M.2) 54g (2.5"), 8.5g (M.2) DELUXE ENTERPRISE SERIES High-Write Environments 80 x 22 x 3.7mm 100 x 70 x 7mm 100 x 70 x 7mm 100 x 70 x 15mm 10g 60g 62g 140g 100 x 70 x 15mm (2.5") 168 x 70 x 19mm (HHHL) 210g Which SSD is right for you? For more information, email: SSD@ssi.samsung.com 18 Solid State Drives 1H 2015 samsung.com/flash-ssd SOLID STATE DRIVES (SSD) Drive Name CM851 Interface Form Factor Connector M.2 22 x 42 mm M.2 SATA III - 6Gb/s No mSATA M.2 22 x 80 mm PM871 PC Workload M.2 No 2.5" 7mmT Write Endurance Mini PCIe SATA III - 6Gb/s Client PC/ Embedded Power-loss Protection PC Workload SFF-8223 PCIe Gen 3 - SATAe SM951 M.2 22 x 80 mm M.2 No PC Workload PCIe Gen 3 - NVMe PM863 SATA III - 6Gb/s 2.5" 7mmT SFF-8223 Yes 0.8 DWPD Data Center SM843Tn SV843 PM1633 Enterprise SM1635 SATA III - 6Gb/s SATA III - 6Gb/s SAS 3.0 12 Gb/s SAS 3.0 12 Gb/s 2.5" 7mmT 2.5" 7mmT 2.5" 15mmT 2.5" 15mmT 2.5" 15mmT SM1715 SFF-8223 SFF-8223 SFF-8680 SFF-8680 SFF-8639 Yes Yes Yes Yes Yes 1.8 DWPD 3.6 DWPD 1.0 DWPD 10 DWPD 10 DWPD PCIe Gen 3 - NVMe Half-Height Half-Length Add-In Card (HHHL AIC) samsung.com/flash-ssd PCIe Edge-Connector 1H 2015 Yes 10 DWPD Density Part Number 16GB MZAPF016HCDD-00000 32GB MZAPF032HCFV-00000 MZMPF032HCFV-00000 64GB MZMPF064HCGM-00000 128GB MZNLN128HCGR-00000 256GB MZNLN256HCHP-00000 512GB MZNLN512HCJH-00000 128GB MZ7LN128HCHP-00000 256GB MZ7LN256HCHP-00000 512GB MZ7LN512HCHP-00000 128GB MZHPV128HDGM-00000 256GB MZHPV256HDGL-00000 512GB MZHPV512HDGL-00000 128GB MZVPV128HDGM-00000 256GB MZVPV256HDGL-00000 512GB MZVPV512HDGL-00000 120GB MZ7LM120HCFD-00003 240GB MZ7LM240HCGR-00003 480GB MZ7LM480HCHP-00003 960GB MZ7LM960HCHP-00003 1920GB MZ7LM1T9HCJM-00003 3840GB MZ7LM3T8HCJM-00003 120GB MZ7WD120HCFV-00003 240GB MZ7WD240HCFV-00003 480GB MZ7WD480HCGM-00003 480GB MZ7WD480HMHP-00003 960GB MZ7WD960HMHP-00003 480GB MZILS480HCGR-00003 960GB MZILS960HCHP-00003 1920GB MZILS1T9HCHP-00003 3840GB MZILS3T8HCJM-00003 400GB MZIES400HMGR-00003 800GB MZIES800HMHP-00003 1600GB MZIES1T6HMJH-00003 800GB MZWKI800HMHP-00003 1600GB MZWKI1T6HMHP-00003 3200GB MZWKI3T2HMJM-00003 1600GB MZPKI1T6HMHP-00003 3200GB MZPKI3T2HMJM-00003 Solid State Drives STORAGE Drive Type 19 Blu-ray Writer SLIM EXTERNAL Interface Speed Type Loading Model USB 2.0 BD Writer 6X Slim Tray SE-506CB Interface Speed Type Loading Model SATA DVD Write 24X H/H Tray SH-224FB Interface Speed Type Loading Model SATA DVD Write 8X Slim Tray SN-208FB Type Loading Model DVD-W H/H DVD-W SLIM DVD-W SLIM EXTERNAL Interface Speed USB 2.0 20 DVD Write 8X Optical Disc Drives Ultra Slim Tray Slim 1H 2015 SE-218GN SE-208GB samsung.com/flash-ssd tsstodd.com Public Information Display (PID) Product Classification Super Narrow Bezel (SNB)/ Ultra Narrow Bezel (UNB) Video Wall SNB: 5.9mm A-to-A UNB: 3.9mm A-to-A Indoor PID Narrow Bezel 40"/46"/55"/75" 700 nits Brightness E-Board PID Landscape Orientation 55"/70"/82" Edge LED AGAR Surface Treatment Outdoor PID High Brightness Full High Definition 110C Clearing Point Why PID instead of TV? COMMERCIAL (PID) CONSUMER (TV) WARRANTY 18 months to 2 years 90 days to 1 year RELIABILITY Public environments 20+ hours daily duty cycle Variety of temperatures & location 5-8 hour daily duty cycle Designed for in-home use in controlled environment In-home living room PRODUCTION LIFECYCLE 24-36 months 12-15 months PICTURE QUALITY Designed to resist image retention LCD backlight covers a wider color spectrum necessary for PC source integration, giving better picture quality AGAR coating for public viewing 120Hz / 240Hz for full-motion video Designed for TV signals Gloss surface treatment LOCATION Most models portrait capable Can only be oriented in landscape mode Product Segmentation SNB / UNB Indoor PID E-Board PID Outdoor PID LIGHT USE Professional Indoor Events Billboard * Control Room * Simulation * Scoreboard * Sports Broadcasting * Dynamic Signage Entertainment Transportation Communication * Casino * Theatre * Menu * Airport * Train/Bus Station * Conference Room Commercial Education Hospitality * Kiosk * Conference Systems * Interactive FPD * Hotel Signage Commercial Education Hospitality * Kiosk * Conference Systems * Interactive FPD * Hotel Signage DISPLAYS HEAVY USE Product Segmentation Type Class Warranty UNB / SNB Ultra / Super Narrow Bezel 2 years Indoor PID Indoor Commercial Panels E-Board Value, Large Format Outdoor PID High Bright, Wide Temp samsungdisplay.com Bezel Suggested Run Time Brightness Usage Applications Value Tier 20+ hours 500-700 nits Heavy Video Walls Premium commercial range 2 years 3.9mm - 5.9mm A-to-A Narrow 20+ hours 600/700 nits Medium Semi-Outdoor Mid-price range 18 months Normal 12 hours 450 nits Daily Indoor, e-Board High-value commercial range 2 years Normal 20+ hours 2500-5000 nits Heavy Outdoor Premium commercial range 1H 2015 DID Panel Lineup, Tablets & Monitors 21 SAMSUNG DIGITAL INFORMATION DISPLAY (DID) PANEL LINEUP Category SNB / UNB Indoor PID E-Board Model Size Model Bezel Resolution Brightness (typical) Contrast Ratio Response Time Frequency MP* Comment LTI460HN01 46" FHD Super narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 5.9mm Active to Active, LED LTI460HN09 46" FHD Super narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 5.9mm Active to Active, LED LTI460HN10 46" FHD Ultra narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED LTI460HN11 46" FHD Ultra narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED LTI550HN01 55" FHD Super narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 5.9mm Active to Active, LED LTI550HN08 55" FHD Super narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 5.7mm Active to Active, LED LTI550HN09 55" FHD Ultra narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED LTI550HN11-V 55" FHD Ultra narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED LTI400HA10 40" FHD Narrow eLED 700 nits 3,000:1 8ms 60Hz Now eLED LTI460HN08 46" FHD Narrow eLED 700 nits 4,000:1 8ms 60Hz Now eLED LTI550HN06 55" FHD Narrow eLED 700 nits 4,000:1 8ms 60Hz Now eLED LTI550HN07 55" FHD Narrow eLED 450 nits 4,000:1 8ms 60Hz Now E-Board; Landscape/Portrait LTI750HF02-0 75" FHD Normal D-LED 400 nits 3,500:1 8ms 120Hz Now Landscape / Portrait LTI750FJ01 75" UHD Normal D-LED 500 nits 5,000:1 8ms 120Hz Now Landscape / Portrait LTI700HA02 70" FHD Normal eLED 400 nits 4,000:1 8ms 60Hz Now E-Board; Landscape/Portrait LTI820HA01 82" FHD Normal eLED 450 nits 3,000:1 8ms 60Hz Now E-Board; Landscape mode only LTI460HZ01 46" FHD Narrow D-LED 5,000 nits 4,000:1 8ms 60Hz Now LTI460HF01-V 46" FHD Narrow D-LED 2,500 nits 3,000:1 8ms 120Hz Now LTH550HF04-V 55" FHD Narrow D-LED 2,500 nits 3,000:1 8ms 120Hz Now LTI750HF01-V 75" FHD Narrow D-LED 3,500 nits 3,000:1 8ms 120Hz Now Backlight Outdoor High Bright, Hi Temp LC, 1/4 Pol. High Bright, Hi Temp LC, 1/4 Pol. High Bright, Hi Temp LC, 1/4 Pol. High Bright, Hi Temp LC, 1/4 Pol. TABLETS Size PN Mode Resolution H(RGB) V Aspect Ratio PPI Brightness (nits) MP 7" LTL070NL01 PLS WSVGA 1024 600 16:09 170 400 Now 8.0" Open Cell LTL080AL01 PLS WXGA 1280 800 16:09 189 Open Cell Now 10.1" LTL101AL06 PLS WXGA 1280 800 16:10 149 400 Now 10.1" LTL101DL03 PLS WQXGA 2560 1600 16:10 300 370 Now MONITORS Size PN Mode Resolution H(RGB) V Aspect Ratio PPI Brightness (nits) MP 23" LTM230HL07 PLS FHD 1920 1080 16:09 96 300 Now 23.6" 27" 31.5" 22 LTM236FL01 PLS UHD 3840 2160 16:09 193 300 Now LTM270HT10 TN FHD 1920 1080 16:09 82 300 Now LTM270DL02 PLS QHD 2560 1440 16:09 109 300 Now LTM270HL02 PLS FHD 1920 1080 16:09 82 350 Now LTM270FL01 PLS UHD 3840 2160 16:09 164 350 Now LTM315FL01 PLS UHD 3840 2160 16:09 140 350 Now LTM315FL02 PLS UHD 3840 2160 16:09 140 350 Now DID Panel Lineup, Tablets & Monitors 1H 2015 samsungdisplay.com Contacts Feel free to contact your local distributor or sales representative with any Samsung sales inquiries. Adelsa | www.adetronics.com.mx PRODUCTS ADDRESS MAIN PHONE Memory SLSI LCD MEXICO Hacienda Corralejo #80 Bosque de Echegaray Naucalpan, Mexico 53310 52-555-560-5002 GUADALAJARA OFFICE 52-333-122-3054 MONTERREY OFFICE 52-818-214-0011 CD. JUAREZ OFFICE 52-656-613-3517 REYNOSA OFFICE 52-899-922-5540 ATMI Sales | FAX www.atmisales.com PRODUCTS ADDRESS MAIN PHONE FAX Memory SLSI LCD OREGON 4900 S.W. Griffith Drive Suite 253 Beaverton, OR 97005 1-800-898-2446 503-643-8307 503-643-4364 503-643-4364 WASHINGTON 8581 154th Avenue NE Redmond WA 98052 425-869-7636 425-869-9841 Bear VAI Technology | www.bearvai.com PRODUCTS ADRRESS MAIN PHONE FAX Memory SLSI LCD MAIN OFFICE - BRECKSVILLE, OHIO 6910 Treeline Drive Unit H Brecksville, OH 44141 440-526-1991 440-526-5426 MAIN OFFICE - INDIANA 11451 Overlook Drive Fishers, IN 46037 440-832-7637 317-845-8650 SOUTHERN OHIO/PITTSBURGH/KENTUCKY/MICHIGAN OFFICES 440-526-1991 440-526-5426 FAX Core Sales, Inc. | www.coresales.com PRODUCTS ADDRESS MAIN PHONE Memory SLSI LCD 901 Warrenville Road Suite 211 Lisle, IL 60532 847-843-8888 Crestone Technology Group | www.crestonegroup.com PRODUCTS ADDRESS MAIN PHONE FAX Memory SLSI LCD COLORADO 7108 S. Alton Way Building L Centennial, CO 80112 303-280-7202 720-482-2220 CONTACTS UTAH OFFICE samsung.com/semiconductor/sales-network 1H 2015 Contacts 23 Customer 1st | www.customer1st.com PRODUCTS ADDRESS MAIN PHONE FAX Memory SLSI LCD MINNESOTA 2950 Metro Drive Suite 101 Bloomington, MN 55425 952-851-7909 952-851-7907 KANSAS 2111 E. Crossroad Lane #202 Olathe, KS 66062 InTELaTECH | www.intelatech.com PRODUCTS ADDRESS MAIN PHONE FAX Memory SLSI ONTARIO - CANADA 5225 Orbitor Drive Suite 2 905-629-0082 905-624-6909 905-629-1795 905-629-8910 21 Concourse Gate Suite 12 Ottawa, ONT K2E 7S4 905-629-0082 613-221-9160 ALBERTA - CANADA 14939 Mt. McKenzie Drive SE Calgary, Alberta T2Z 2M6 905-629-0082 403-686-6926 QUEBEC - CANADA 620 St-Jean Boulevard Suite 202 Pointe Claire Quebec H9R 3K2 905-629-0082 905-629-0082 BRITISH COLUMBIA - CANADA 5811 Cooney Road Suite 305, South Tower Vancouver, BC V5X 3M1 905-629-0082 905-629-1795 I-Squared Incorporated | www.isquared.com PRODUCTS ADDRESS MAIN PHONE FAX Memory SLSI LCD 2635 N. 1st Street Suite 128 San Jose, CA 95134 408-988-3400 408-988-2079 1250 B Street Petaluma, CA 94952 Neptune Electronics (necco) | www.neccoelect.com PRODUCTS ADDRESS MAIN PHONE FAX Memory SLSI LCD 11 Oval Drive Suite 169 Islandia, NY 11749 631-234-2525 631-234-2707 New Elpis, Inc. | www.newelpis.com PRODUCTS ADDRESS MAIN PHONE FAX LCD 165 Dundas Street, W Suite 702 Mississauga, ON Canada L5B 2N6 905-275-3516 905-275-4109 24 Contacts 1H 2015 samsung.com/semiconductor/sales-network New Tech Solutions PRODUCTS ADDRESS MAIN PHONE FAX Memory SLSI LCD 26 Ray Avenue Burlington, MA 01803 781-229-8888 781-229-1614 Rep One Associates, Inc. | www.repone.com PRODUCTS ADDRESS MAIN PHONE FAX Memory SLSI LCD ALABAMA 303 Williams Avenue Suite 1011 Huntsville, AL 35801 256-539-7371 256-533-4509 GEORGIA 3000 Langford Road Bldg 300 Norcross, GA 30071 770-209-9242 678-591-6753 770-209-9245 NORTH CAROLINA 5540 Centerview Drive Suite 200 Raleigh, NC 27606 704-846-5744 919-424-3866 10800 Sikes Place Suite 300 Charlotte, NC 28277 704-846-5744 704-846-25 FLORIDA 128 Ledbury Drive Longwood, FL 32779 Tech Coast Sales | www.tc-sales.com PRODUCTS ADDRESS MAIN PHONE EMAIL Memory SLSI LCD MAIN OFFICE 23121 Verdugo Drive Suite 101 Laguna Hills, CA 92653 949-305-6869 sales@tc-sales.com West Associates | www.westassociates.com PRODUCTS ADDRESS MAIN PHONE FAX Memory SLSI LCD AUSTIN / SAN ANTONIO 4100 Duval Road Building 1, Suite 102 Austin, TX 78759 512-343-1199 512-343-1922 DALLAS / OKLAHOMA / ARKANSAS 2745 Dallas Parkway Suite 460 Plano, TX 75093 972-680-2800 972-699-0330 HOUSTON / VALLEY / LOUISIANA 24624 Interstate 45 North Suite 200 Spring, TX 77386 512-343-1199 512-343-1922 To access our online sales portal, visit: https://smarttools.ssi.samsung.com CONTACTS For all product information please visit: samsung.com/us/oem-solutions samsung.com/semiconductor/sales-network 1H 2015 Contacts 25 Notes 26 1H 2015 samsung.com/semiconductor/sales-network Notes samsung.com/semiconductor/sales-network 1H 2015 27 Samsung Semiconductor, Inc. 601 McCarthy Boulevard Milpitas, CA 95035 samsung.com/us/oem-solutions Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specifications with the intent to improve function or design at any time and without notice and is not required to update this documentation to reflect such changes. This publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation any consequential or incidental damages. Copyright 2014. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. Ultrabooks is a trademark of Intel Corporation. All other names and brands may be claimed as the property of others. The appearance of all products, dates, figures, diagrams and tables are subject to change at any time, without notice. BR-15-ALL-001 | Printed 4/15