PRODUCT
SELECTION
GUIDE
DISPLAYS, MEMORY AND STORAGE
1H 2015
contacts Displays storage Mcp Flash - ssD DraM
To access our online sales portal, visit: https://smarttools.ssi.samsung.com
www.samsung.com/us/oem-solutions
MOBILE/WIRELESS
NOTEBOOK PCs/
ULTRABOOKS™
DESKTOP PCs/
WORKSTATIONS
NETWORKING/
COMMUNICATIONS
CONSUMER
ELECTRONICS
Markets DRAM SSD FLASH ASIC LOGIC TFT/LCD ODD
SERVERS
Samsung continues to lead the industry with the broadest portfolio of memory products and
display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many
computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such
as smartphones and tablets. Samsung is also a leader in TV displays. In addition, Samsung provides
the industry’s widest line of storage products from the consumer to enterprise levels. These include
optical disc drives as well as flash storage, such as Solid State Drives, and a range of embedded flash
storage products.
Samsung Semiconductor, Inc.
taBle oF contents
//
DraM PAGES 4–13
samsung.com/dram
• DDR4 SDRAM
• DDR3 SDRAM
• DDR2 SDRAM
• Graphics DRAM
• Mobile DRAM
• Ordering Info
ASH - SSD PAGES 14–15
samsung.com/flash
• eMMC • Solid State Drives (SSD)
MUlti-chip pacKages PAGES 16–17
samsung.com/mcp
• eMMC + LPDDR3
storage PAGES 18–20
samsung.com/flash-ssd tsstodd.com
• Solid State Drives • Optical Disc Drives
Displays PAGES 21–22
samsungdisplay.com
• Public Information Display
(PID) Product Classification
• SNB/UNB
• Indoor PID
• E-Board
• Outdoor PID
• Tablets
• Monitors
contacts PAGES 23–25
samsung.com/semiconductor/sales-network
• Sales Representatives and Distributors
• To access our online sales portal, visit: https://smarttools.ssi.samsung.com
DraM
samsung.com/dram
41H 2015DDR4 SDRAM samsung.com/dram
DDR4 SDRAM REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
8GB 1.2V 1G x 72
M393A1G40DB0-CPB 4Gb (1G x4) * 18 Lead Free & Halogen Free, Flip Chip 2133 1 Now
M393A1G40DB1-CRC 4Gb (1G x4) * 18 Lead Free & Halogen Free, Flip Chip 2400 1 CS: '15, Mar
M393A1G43DB0-CPB 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2133 2 Now
M393A1G43DB1-CRC 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, Apr
16GB 1.2V 2G x 72
M393A2G40DB0-CPB 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 2133 2 Now
M393A2G40DB1-CRC 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, Feb
M393A2K40BB0-CPB 8Gb (2G x4) * 18 Lead Free & Halogen Free, Flip Chip 2133 1 Now
M393A2K40BB1-CRC 8Gb (2G x4) * 18 Lead Free & Halogen Free, Flip Chip 2400 1 1Q'15
M393A2K43BB1-CPB/CRC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 2 CS: '15, Apr
32GB 1.2V 4G x 72 M393A4K40BB0-CPB 8Gb (2G x4) * 36 Lead Free & Halogen Free, Flip Chip 2133 2 Now
M393A4K40BB1-CRC 8Gb (2G x4) * 36 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, Mar
64GB TSV 1.2V 8G x 72 M393A8G40D40-CRB 4Gb (4G x4) * 36 Lead Free & Halogen Free, 4High TSV 2133 8 Now
M393A8G40D41-CTC 4Gb (4G x4) * 36 Lead Free & Halogen Free, 4High TSV 2400 8 CS: '15, 2Q
Notes: DDR4 4Gb based 0 = IDT 2 = Montage PB = DDR4-2133(15-15-15) RB = DDR4-2133(17-15-15)
0 = IDT 4 = Montage RC = DDR4-2400(17-17-17) TC = DDR4-2400(19-17-17)
DDR4 8Gb based 0 = IDT 4 = Montage PB = DDR4-2133(15-15-15) RB = DDR4-2400(17-15-15)
0 = IDT 4 = Montage RC = DDR4-2400(17-17-17) TC = DDR4-2400(19-17-17)
DDR4 SDRAM COMPONENTS
Density Voltage Organization Part Number # Pins-Package Compliance Speed (Mbps) Dimensions Production
4Gb 1.2V
1G x 4 K4A4G045WD-BCRC/PB 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 2400/2133 7.5x11mm Now
512M x 8 K4A4G085WD-BCRC/PB 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 2400/2133 7.5x11mm Now
256M x 16 K4A4G165WD-BCRC/PB 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 2400/2133 7.5x13.3mm Now
8Gb 1.2V
2G x 4 K4A8G045WB-BCRC/PB 78 ball FBGA Lead Free & Halogen Free, Flip Chip 2400/2133 7.5x11mm Now
1G x 8 K4A8G085WB-BCRC/PB 78 ball FBGA Lead Free & Halogen Free, Flip Chip 2400/2133 7.5x11mm Now
512M x16 K4A8G165WB-BCRC/PB 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 2400/2133 7.5x13.3mm CS: '15, 1Q
DDR4 SDRAM LOAD REDUCED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
32GB 1.2V 4G x 72 M386A4G40DM0-CPB 4Gb DDP (2Gx4) * 36 Lead Free & Halogen Free, DDP 2133 4 Now
M386A4G40DM1-CRC 4Gb DDP (2Gx4) * 36 Lead Free & Halogen Free, DDP 2400 4 CS: '15, May
64GB 1.2V 8G x 72 M386A8K40BM1-CPB 8Gb DDP (4Gx4) * 36 Lead Free & Halogen Free, DDP 2133 4 CS: '15, Mar
M386A8K40BM1-CRC 8Gb DDP (4Gx4) * 36 Lead Free & Halogen Free, DDP 2400 4 CS: '15, May
Notes: DDR4 4Gb based 0 = IDT 2 = Montage PB = DDR4-2133(15-15-15)
5 = IDT 4 = Montage RC = DDR4-2400(17-17-17)
DDR4 8Gb based 0 = IDT 4 = Montage PB = DDR4-2133(15-15-15)
5 = IDT 4 = Montage RC = DDR4-2400(17-17-17)
DDR4 SDRAM VLP REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
16GB 1.2V 2G x 72 M392A2G40DM0-CPB 4Gb DDP (2G x4) * 18 Lead Free & Halogen Free, DDP 2133 2 Now
M392A2K43BB1-CPB/RC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 2 CS: '15, July
32GB 1.2V 4G x 72 M392A4K40BM0-CPB/RC 8Gb DDP (4G x4) * 18 Lead Free & Halogen Free, DDP 2133/2400 2 CS: '15, Apr
DDR4 SDRAM UNBUFFERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
4GB 1.2V 512M x 64 M378A5143DB0-CPB 4Gb (512M x8) *8 Lead Free & Halogen Free 2133 1 Now
M378A5143DB1-CRC 4Gb (512M x8) *8 Lead Free & Halogen Free 2400 1 CS: '15, Apr
8GB 1.2V 1G x 64 M378A1G43DB0-CPB 4Gb (512M x8) *16 Lead Free & Halogen Free 2133 2 Now
M378A1G43DB1-CRC 4Gb (512M x8) *16 Lead Free & Halogen Free 2400 2 CS: '15, Apr
16GB 1.2V 2G x 64 M378A2K43BB1-CPB/CRC 8Gb (1G x8) * 16 Lead Free & Halogen Free 2133/2400 2 CS: '15, Feb
Notes: PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17)
samsung.com/dram 5
DRAM
1H 2015 DDR3 SDRAM
DDR4 SDRAM ECC UNBUFFERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
8GB 1.2V 1G x72 M391A1G43DB0-CPB 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2133 2 Now
M391A1G43DB1-CRC 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, May
16GB 1.2V 2G x72 M391A2K43BB1-CPB/CRC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 2 CS: '15, Mar
Notes: PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17)
DDR4 SDRAM ECC SODIMM MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
8GB 1.2V 1G x 72 M474A1G43DB0-CPB 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2133 2 Now
M474A1G43DB1-CRC 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2400 2 CS: '15, May
16GB 1.2V 2G x 72 M474A2K43BB1-CPB/RC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 2 CS: '15, Mar
DDR4 SDRAM SODIMM MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
4GB 1.2V 512M x 64 M471A5143DB0-CPB 4Gb (512M x8) * 8 Lead Free & Halogen Free 2133 1 Now
M471A5143DB1-CRC 4Gb (512M x8) * 8 Lead Free & Halogen Free 2400 1 CS: '15, Apr
8GB 1.2V 1G x 64 M471A1G43DB0-CPB 4Gb (512M x8) * 16 Lead Free & Halogen Free 2133 2 Now
M471A1G43DB1-CRC 4Gb (512M x8) * 16 Lead Free & Halogen Free 2400 2 CS: '15, Apr
16GB 1.2V 2G x 64 M471A2K43BB1-CPB/CRC 8Gb (1G x8) * 16 Lead Free & Halogen Free 2133/2400 2 CS: '15, Feb
Notes: PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17)
DDR3 SDRAM REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed
(Mbps) Ranks Production
8GB 1.5V 1G x 72
M393B1K70QB0-CMA (08/09) 2Gb (512M x4) * 36 Lead Free & Halogen Free, Flip Chip 1866 2 Now
M393B1G70QH0-CMA (08/09) 4Gb (1G x4) * 18 Lead Free & Halogen Free 1866 1 Now
M393B1G73QH0-CMA (08/09) 4Gb (512M x8) * 18 Lead Free & Halogen Free 1866 2 Now
16GB 1.5V 2G x 72
M393B2G70QH0-CMA (08/09) 4Gb (1G x4) * 36 Lead Free & Halogen Free 1866 2 Now
M393B2G70DB0-CMA (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1866 2 Now
M393B2G70EB0-CMA (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1866 2 Now
8GB 1.35V 1G x 72 M393B1K70QB0-YK0 (08/09) 2Gb (512M x4) * 36 Lead Free & Halogen Free, Flip Chip 1600 2 Now
M393B1G70QH0-YK0 (08/09) 4Gb (1G x4) * 18 Lead Free & Halogen Free 1600 1 Now
16GB 1.35V 2G x 72
M393B2G70QH0-YK0 (08/09) 4Gb (1G x4) * 36 Lead Free & Halogen Free 1600 2 Now
M393B2G70DB0-YK0 (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1600 2 Now
M393B2G70EB0-YK0 (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1600 2 Now
32GB 1.35V 4G x 72 M393B4G70DM0-YH9(02/03) 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free. DDP 1333 4 Now
Notes: 8 = IDT A1 Evergreen
9 = Inphi UVGS02
2 = IDT Alpine
3 = Inphi XV-GS02
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
K0 = DDR3-1600 (11-11-11)
MA = DDR3-1866 (13-13-13)
DDR3 SDRAM Load Reduced REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed
(Mbps) Ranks Production
32GB 1.35V 4G x 72 M386B4G70DM0-YK0(3/4) 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free, DDP 1600 4 Now
1.5V M386B4G70DM0-CMA(3/4) 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free, DDP 1866 4 Now
64GB 1.35V 8G x 72 M386B8G70DE0-YH9(4) 4Gb QDP (4G x4) * 36 Lead Free & Halogen Free, QDP 1333 8 Now
1.5V M386B8G70DE0-CK0(4) 4Gb QDP (4G x4) * 36 Lead Free & Halogen Free, QDP 1600 8 Now
Notes: 3 = Inphi iMB GS02B 4 = Montage C1
samsung.com/dram
61H 2015DDR3 SDRAM & DDR2 SDRAM
DDR3 SDRAM ECC SODIMM MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
8GB 1.5V 1024M x 72 M474B1G73QH0-CMA 4Gb (512M x8) * 18 Lead Free & Halogen Free 1866 2 Now
1.35V M474B1G73QH0-YK0 4Gb (512M x8) * 18 Lead Free & Halogen Free 1600 2 Now
DDR3 SDRAM UNBUFFERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
2GB 1.5V 256M x 64 M378B5773QB0-CK0/MA 2Gb (256M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now
4GB
1.5V
512M x 64
M378B5173QH0-CK0/MA 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now
M378B5173DB0-CK0/MA 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now
M378B5173EB0-CK0/MA 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now
1.35V M378B5173QH0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 2Q'15
M378B5173EB0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 2Q'15
8GB
1.5V
1024M x 64
M378B1G73QH0-CK0/MA 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600/1866 2 Now
M378B1G73DB0-CK0/MA 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600/1866 2 Now
M378B1G73EB0-CK0/MA 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600/1866 2 Now
1.35V M378B1G73QH0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 2Q'15
M378B1G73EB0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 2Q'15
Notes: K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13)
DDR3 SDRAM VLP REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed
(Mbps) Ranks Production
8GB
1.5V
1G x 72
M392B1G70DB0-CMA (03/04) 4Gb (1Gx4) * 18 Lead Free & Halogen Free, Flip Chip 1866 1 Now
1.35V M392B1G70DB0-YK0 (03/04) 4Gb (1Gx4) * 18 Lead Free & Halogen Free, Flip Chip 1600 1 Now
1.5V M392B1G73DB0-CMA (03/04) 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 1866 2 Now
1.35V M392B1G73DB0-YK0 (03/04) 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 1600 2 Now
16GB 1.5V 2G x 72 M392B2G70DM0-CMA (03/04) 4Gb DDP (2G x4) * 18 Lead Free & Halogen Free, DDP 1866 2 Now
1.35V M392B2G70DM0-YK0 (03/04) 4Gb DDP (2G x4) * 18 Lead Free & Halogen Free, DDP 1600 2 Now
32GB 1.35V 4G x 72 M392B4G70DE0-YH9 (03/04) 4Gb QDP (4G x4) * 18 Lead Free & Halogen Free, QDP 1333 4 Now
Notes: 2 = IDT Alpine 3 = Inphi XV-GS02 K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13)
DDR3 SDRAM UNBUFFERED MODULES (ECC)
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
8GB 1.5V 1024M x 72 M391B1G73QH0-CMA 4Gb (512M x8) * 18 Lead Free & Halogen Free 1866 2 Now
1.35V M391B1G73QH0-YK0 4Gb (512M x8) * 18 Lead Free & Halogen Free 1600 2 Now
Notes: H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13)
DDR3 SDRAM SODIMM MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
2GB 1.35V 256M x 64 M471B5674QH0-YK0 4Gb (256M x16) * 4 Lead Free & Halogen Free 1600 1 Now
4GB 1.35V 512M x 64
M471B5173QH0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 Now
M471B5173DB0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 Now
M471B5173EB0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 Now
8GB 1.35V 1024M x 64
M471B1G73QH0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 Now
M471B1G73DB0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 Now
M471B1G73EB0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 Now
Notes: H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13)
samsung.com/dram 7
DRAM
1H 2015
DDR3 SDRAM COMPONENTS
Density Voltage Organization Part Number # Pins-
Package Compliance Speed
(Mbps) Dimensions Production
1Gb 1.5V 128M x 8 K4B1G0846G-BC(H9/K0/MA) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600/1866 7.5x11mm Now
128M x 16 K4B1G1646G-BC(H9/K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600/1866/2133 7.5x13.3mm Now
2Gb 1.5V
256M x 8 K4B2G0846Q-BC(K0/MA/NB) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x11mm Now
128M x 16 K4B2G1646Q-BC(K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x13.3mm Now
512M x 8 K4B4G0846D-BC(K0/MA/NB) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x11mm Now
256M x 16 K4B4G1646D-BC(K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x13.3mm Now
512M x 8 K4B4G0846E-BC(K0/MA/NB) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x11mm Now
256M x 16 K4B4G1646E-BC(K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x13.3mm Now
8Gb 1.5V 512M x 16 K4B8G1646Q-MCK0/MA 96 Ball -FBGA Lead Free & Halogen Free 1600/1866 11x13.3mm Now
1Gb 1.35V 128M x 8 K4B1G0846G-BY(H9/K0) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600 7.5x11mm Now
128M x 16 K4B1G1646G-BY(H9/K0) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600 7.5x13.3mm Now
2Gb 1.35V
512M x 4 K4B2G0446Q-BYK0 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now
256M x 8 K4B2G0846Q-BYK0/MA 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x11mm Now
128M x 16 K4B2G1646Q-BYK0/MA 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x13.3mm Now
4Gb 1.35V
1G x 4 K4B4G0446Q-HYK0 78 Ball -FBGA Lead Free & Halogen Free 1600 10x11mm Now
512M x 8 K4B4G0846Q-HYK0 78 Ball -FBGA Lead Free & Halogen Free 1600 10x11mm Now
256M x 16 K4B4G1646Q-HYK0 96 Ball -FBGA Lead Free & Halogen Free 1600 10x13.3mm Now
1G x 4 K4B4G0446D-BYK0 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now
512M x 8 K4B4G0846D-BYK0 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now
256M x 16 K4B4G1646D-BYK0/MA 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x13.3mm Now
1G x 4 K4B4G0446E-BY(K0/MA) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now
512M x 8 K4B4G0846E-BY(K0/MA) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x11mm Now
256M x 16 K4B4G1646E-BY(K0/MA) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x13.3mm Now
8Gb 1.35V 512M x 16 K4B8G1646Q-MYK0 96 Ball -FBGA Lead Free & Halogen Free 1600 11x13.3mm Now
Notes: H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) NB = DDR3-2133 (14-14-14)
DDR2 SDRAM COMPONENTS
Density Organization Part Number # Pins-Package Dimensions Package Speed (Mbps) Production
512Mb 64M x 8 K4T51083QQ-BC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now
32M x 16 K4T51163QQ-BC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now
1Gb 128M x 8 K4T1G084QG-BC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now
64M x 16 K4T1G164QG-BC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now
Notes: E6 = DDR2-667 (5-5-5) E7 = DDR2-800 (5-5-5) F7 = DDR2-800 (6-6-6) F8 = DDR2-1066 (7-7-7)
Graphics DRAM
samsung.com/dram
81H 2015Mobile DRAM
MOBILE DRAM COMPONENTS
Type Density Organization Part Number Package Power Production
LPDDR3
8Gb
1CH x 32 K4E8E304EE-EGCE 178-FBGA, 11x11.5, DDP, 1600Mbps 1.8V/1.2V/1.2V Now
1CH x 32 K4E8E304EE-AGCE 168-FBGA, 12x12, DDP, 1600Mbps 1.8V/1.2V/1.2V Now
2CH x 32 K3QF1F10EM-AGCE 253-FBGA, 11x11.5, DDP, 1600Mbps 1.8V/1.2V/1.2V Now
2CH x 32 K3QF1F10EM-BGCE 216-FBGA, 12x12, DDP, 1600Mbps 1.8V/1.2V/1.2V Now
2CH x 32 K3QF1F10EM-FGCE 256-FBGA, 14x14, DDP, 1600Mbps 1.8V/1.2V/1.2V Now
12Gb 1CH x 32 K4E2E304EE-AGCE 168-FBGA, 12x12, TDP, 1600Mbps 1.8V/1.2V/1.2V Now
16Gb
1CH x 32 K4E6E304EE-EGCE 178-FBGA, 11x11.5, QDP, 1600Mbps 1.8V/1.2V/1.2V Now
1CH x 32 K4E6E304EE-AGCE 168-FBGA, 12x12, QDP, 1600Mbps 1.8V/1.2V/1.2V Now
2CH x 32 K3QF2F20EM-AGCE 253-FBGA, 11x11.5, QDP, 1600Mbps 1.8V/1.2V/1.2V Now
2CH x 32 K3QF2F20EM-BGCE 216-FBGA, 12x12 PoP, QDP,1600Mbps 1.8V/1.2V/1.2V Now
2CH x 32 K3QF2F20EM-FGCE 256-FBGA, 14x14 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now
2CH x 32 K3QF2F20EM-QGCE 216-FBGA, 15x15 PoP, QDP,1600Mbps 1.8V/1.2V/1.2V Now
24Gb
2CH x 32 K3QF6F60MM-BGCE 216-FBGA, 12x12 PoP, QDP,1600Mbps 1.8V/1.2V/1.2V ES
2CH x 32 K3QF6F60MM-FGCE 256-FBGA, 14x14 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now
2CH x 32 K3QF6F60MM-QGCE 216-FBGA, 15x15 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now
2CH x 32 K3MF9F90MM-MGCE 504-FBGA, 15x15 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now
LPDDR4
24Gb x 64 K3RG3G30MM-MGCH 366-FBGA, 15x15, QDP, 3200Mbps 1.8V/1.1V/1.1V Now
32Gb x 64 K3RG2G20BM-MGCH 366-FBGA, 15x15, QDP, 3200Mbps 1.8V/1.1V/1.1V ES
GRAPHICS DRAM COMPONENTS
Type Density Organization Part Number Package VDD/VDDQ Speed Bin (MHz) Production
GDDR5
8Gb 256M x 32
K4G80325FB-HC(04/03/28/25) 170-FCFBGA 1.5V/1.5V 5000/6000/7000/8000 CS: '15,2Q
K4G80325FB-HC(04/03/28/25) 170-FCFBGA 1.35V/1.35V 4000/5000/6000/(TBD) CS: '15,2Q
4Gb 128M x 32
K4G41325FC-HC(04/03/*28) 170-FCFBGA 1.5V/1.5V(*1.55V/1.55V) 5000/6000/*7000 Now *HC28 is 1.55V
K4G41325FC-HC(04/03/28) 170-FCFBGA 1.35V/1.35V 4000/5000/5500 Now
2Gb 64M x 32
K4G20325FS-HC(04/03) 170-FBGA 1.5V/1.5V 5000/6000 Now
K4G20325FS-HC(04/03) 170-FBGA 1.35V/1.35V 4000/5000 Now
K4G20325FD-FC(04/03/*28) 170-FBGA 1.5V/1.5V(*1.6V/1.6V) 5000/6000/*7000 Now *HC28 is 1.6V
K4G20325FD-FC(04/03) 170-FBGA 1.35V/1.35V 4000/5000 Now
gDDR3
4Gb 256M x 16
K4W4G1646E-BC(1A/1B) 96-FCFBGA 1.5V/1.5V 2133/2400 Now
K4W4G1646E-BC(1A/1B) 96-FCFBGA 1.35V/1.35V 1866/2133 Now
K4W4G1646D-BC(12/11/1A) 96-FCFBGA 1.5V/1.5V 1600/1866/2133 Now
K4W4G1646D-BC(1A) 96-FCFBGA 1.35V/1.35V 1866 Now
K4W4G1646D-BY(12) 96-FCFBGA 1.35V/1.35V 1600 Now
2Gb 128M x 16
K4W2G1646Q-BC(12/11/1A) 96-FCFBGA 1.5V/1.5V 1600/1866/2133 Now
K4W2G1646Q-BC(1A) 96-FCFBGA 1.35V/1.35V 1866 Now
K4W2G1646Q-BY(12) 96-FCFBGA 1.35V/1.35V 1600 Now
Notes: Package
(1) Speeds (clock cycle - speed
bin)
H: FBGA (Halogen Free & Lead Free) (DDR3)
B: FCFBGA (Halogen Free & Lead Free) (DDR3)
H: FCFBGA (Halogen Free & Lead Free) (GDDR5)
F: FBGA (Halogen Free & Lead Free) (GDDR5)
25: 0.25ns (8000Mbps)
28: 0.28ns (7000Mbps)
03: 0.3ns (6000Mbps)
04: 0.4ns (5000Mbps)
05: 0.5ns (4000Mbps)
1B: 8.3ns (2400Mbps gDDR3)
1A: 1.0ns (2133Mbps gDDR3)
11: 1.1ns (1866Mbps)
12: 1.25ns (1600Mbps)
samsung.com/dram 9
DRAM
1H 2015 DRAM Ordering Information
1. Memory (K)
2. DRAM: 4
3. DRAM Type
B: DDR3 SDRAM
D: GDDR SDRAM
G: GDDR5 SDRAM
H: DDR SDRAM
J: GDDR3 SDRAM
M: Mobile SDRAM
N: SDDR2 SDRAM
S: SDRAM
T: DDR SDRAM
U: GDDR4 SDRAM
V: Mobile DDR SDRAM Power Efficient Address
W: SDDR3 SDRAM
X: Mobile DDR SDRAM
Y: XDR DRAM
Z: Value Added DRAM
4. Density
10: 1G, 8K/32ms
16: 16M, 4K/64ms
26: 128M, 4K/32ms
28: 128M, 4K/64ms
32: 32M, 2K/32ms
50: 512M, 32K/16ms
51: 512M, 8K/64ms
52: 512M, 8K/32ms
54: 256M, 16K/16ms
55: 256M, 4K/32ms
56: 256M, 8K/64ms
62: 64M, 2K/16ms
64: 64M, 4K/64ms
68: 768M, 8K/64ms
1G: 1G, 8K/64ms
2G: 2G, 8K/64ms
4G: 4G, 8K/64ms
5. Bit Organization
02: x 2
04: x 4
06: x 4 Stack (Flexframe)
07: x 8 Stack (Flexframe)
08: x 8
15: x 16 (2CS)
16: x 16
26: x 4 Stack (JEDEC Standard)
27: x 8 Stack (JEDEC Standard)
30: x 32 (2CS, 2CKE)
31: x 32 (2CS)
32: x 32
6. # of Internal Banks
2: 2 Banks
3: 4 Banks
4: 8 Banks
5: 16 Banks
7. Interface ( VDD, VDDQ)
2: LVTTL, 3.3V, 3.3V
4: LVTTL, 2.5V, 2.5V
5: SSTL-2 1.8V, 1.8V
6: SSTL-15 1.5V, 1.5V
8: SSTL-2, 2.5V, 2.5V
A: SSTL, 2.5V, 1.8V
F: POD-15 (1.5V,1.5V)
H: SSTL_2 DLL, 3.3V, 2.5V
M: LVTTL, 1.8V, 1.5V
N: LVTTL, 1.5V, 1.5V
P: LVTTL, 1.8V, 1.8V
Q: SSTL-2 1.8V, 1.8V
R: SSTL-2, 2.8V, 2.8V
U: DRSL, 1.8V, 1.2V
8. Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
E: 6th Generation
F: 7th Generation
G: 8th Generation
H: 9th Generation
I: 10th Generation
J: 11th Generation
K: 12th Generation
M: 1st Generation
N: 14th Generation
Q: 17th Generation
9. Package Type
DDR2 DRAM
L: TSOP II (Lead-free & Halogen-free)
H: FBGA (Lead-free & Halogen-free)
F: FBGA for 64Mb DDR (Lead-free & Halogen-free)
6: sTSOP II (Lead-free & Halogen-free)
T: TSOP II
N: sTSOP II
G: FBGA
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
Z: FBGA (Lead-free)
DDR2 SDRAM
Z: FBGA (Lead-free)
J: FBGA DDP (Lead-free)
Q: FBGA QDP (Lead-free)
H: FBGA (Lead-free & Halogen-free)
M: FBGA DDP (Lead-free & Halogen-free)
E: FBGA QDP (Lead-free & Halogen-free)
T: FBGA DSP (Lead-free & Halogen-free, Thin)
DDR3 SDRAM
Z: FBGA (Lead-free)
H: FBGA (Halogen-free & Lead-free)
Graphics Memory
Q: TQFP
U: TQFP (Lead Free)
G: 84/144 FBGA
V: 144 FBGA (Lead Free)
Z: 84 FBGA (Lead Free)
T: TSOP
L: TSOP (Lead Free)
A: 136 FBGA
B: 136 FBGA (Lead Free)
H: FBGA (Hologen Free & Lead Free)
E: 100 FBGA (Hologen Free & Lead Free)
SDRAM
L TSOP II (Lead-free & Halogen-free)
N: STSOP II
T: TSOP II
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
COMPONENT DRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11
K 4 T XX XX X X X X X XX
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
Speed
Temp & Power
Package Type
Generation
Interface (VDD, VDDQ)
Number of Internal Banks
samsung.com/dram
10 1H 2015DRAM Ordering Information
COMPONENT DRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11
K 4 T XX XX X X X X X XX
XDR DRAM
J: BOC(LF) P: BOC
Mobile DRAM
Leaded/Lead Free
G/A: 52balls FBGA Mono
R/B: 54balls FBGA Mono
X/Z: 54balls BOC Mono
J/V: 60(72)balls FBGA Mono 0.5pitch
L /F: 60balls FBGA Mono 0.8pitch
S/D: 90balls FBGA
Monolithic (11mm x 13mm)
F/H: Smaller 90balls FBGA Mono
Y/P: 54balls CSP DDP
M/E: 90balls FBGA DDP
10. Temp & Power - COMMON
(Temp, Power)
C: Commercial, Normal (0’C – 95’C) & Normal
Power
C: (Mobile Only) Commercial (-25 ~ 70’C), Normal
Power
J: Commercial, Medium
L: Commercial, Low (0’C – 95’C) & Low Power
L: (Mobile Only) Commercial, Low, i-TCSR
F: Commercial, Low, i-TCSR & PASR & DS
E: Extended (-25~85’C), Normal
N: Extended, Low, i-TCSR
G: Extended, Low, i-TCSR & PASR & DS
I: Industrial, Normal (-40’C – 85’C) & Normal
Power
P: Industrial, Low (-40’C – 85’C) & Low Power
H: Industrial, Low, i-TCSR & PASR & DS
11. Speed (Wafer/Chip Biz/BGD: 00)
DDR SDRAM
CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
B3: DDR333 (166MHz @ CL=2.5, tRCD=3,
tRP=3) *1
A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
B0: DDR266 (133MHz @ CL=2.5, tRCD=3,
tRP=3)
Note 1: "B3" has compatibility with "A2" and "B0"
DDR2 SDRAM
CC: DDR2-400 (200MHz @ CL=3, tRCD=3,
tRP=3)
D5: DDR2-533 (266MHz @ CL=4, tRCD=4,
tRP=4)
E6: DDR2-667 (333MHz @ CL=5, tRCD=5,
tRP=5)
F7: DDR2-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
E7: DDR2-800 (400MHz @ CL=5, tRCD=5,
tRP=5)
DDR3 SDRAM
F7: DDR3-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,
tRP=7)
G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,
tRP=8)
H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,
tRP=9)
K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,
tRP=11)
MA: DDR3-1866 (933MHz @ CL=13, tRCD=13,
tRP=13)
NB: DDR3-2133 (1067MHz @ CL=14, tRCD=14,
tRP=14)
Graphics Memory
18: 1.8ns (550MHz)
04: 0.4ns (2500MHz)
20: 2.0ns (500MHz)
05: 0.5ns (2000MHz)
22: 2.2ns (450MHz)
5C: 0.56ns (1800MHz)
25: 2.5ns (400MHz)
06: 0.62ns (1600MHz)
2C: 2.66ns (375MHz)
6A: 0.66ns (1500MHz)
2A: 2.86ns (350MHz)
07: 0.71ns (1400MHz)
33: 3.3ns (300MHz)
7A: 0.77ns (1300MHz)
36: 3.6ns (275MHz)
08: 0.8ns (1200MHz)
40: 4.0ns (250MHz)
09: 0.9ns (1100MHz)
45: 4.5ns (222MHz)
1 : 1.0ns (1000MHz)
50/5A: 5.0ns (200MHz)
1 : 1.1ns (900MHz)
55: 5.5ns (183MHz)
12: 1.25ns (800MHz)
60: 6.0ns (166MHz)
14: 1.4ns (700MHz)
16: 1.6ns (600MHz)
SDRAM (Default CL=3)
50: 5.0ns (200MHz CL=3)
60: 6.0ns (166MHz CL=3)
67: 6.7ns
75: 7.5ns PC133 (133MHz CL=3)
XDR DRAM
A2: 2.4Gbps, 36ns, 16Cycles
B3: 3.2Gbps, 35ns, 20Cycles
C3: 3.2Gbps, 35ns, 24Cycles
C4: 4.0Gbps, 28ns, 24Cycles
DS: Daisychain Sample
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
Note: All Lead-free and Halogen-free products are in
compliance with RoHS
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
Speed
Temp & Power
Package Type
Generation
Interface (VDD, VDDQ)
Number of Internal Banks
samsung.com/dram 11
DRAM
1H 2015 DRAM Ordering Information
MODULE DRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11 12 13
M X XX T XX X X X X X X XX X
1. Memory Module: M
2. DIMM Type
3: DIMM
4: SODIMM
3. Data bits
12: x 72 184pin Low Profile Registered DIMM
63: x 63 PC100/PC133 μSODIMM with SPD
for 144pin
64: x 64 PC100/PC133 SODIMM with SPD
for 144pin (Intel/JEDEC)
66: x 64 Unbuffered DIMM with SPD for
144pin/168pin (Intel/JEDEC)
68: x 64 184pin Unbuffered DIMM
70: x 64 200pin Unbuffered SODIMM
71: x 64 204pin Unbuffered SODIMM
74: x 72/ECC Unbuffered DIMM with SPD
for 168pin (Intel/JEDEC)
77: x 72/ECC PLL + Register DIMM with SPD
for 168pin (Intel PC100)
78: x 64 240pin Unbuffered DIMM
81: x 72 184pin ECC unbuffered DIMM
83: x 72 184pin Registered DIMM
90: x 72/ECC PLL + Register DIMM
91: x 72 240pin ECC unbuffered DIMM
92: x 72 240pin VLP Registered DIMM
93: x 72 240pin Registered DIMM
95: x 72 240pin Fully Buffered DIMM with SPD
for 168pin (JEDEC PC133)
4. DRAM Component Type
B: DDR3 SDRAM (1.5V VDD)
L: DDR SDRAM (2.5V VDD)
S: SDRAM
T: DDR2 SDRAM (1.8V VDD)
5. Depth
09: 8M (for 128Mb/512Mb)
17: 16M (for 128Mb/512Mb)
16: 16M
28: 128M
29: 128M (for 128Mb/512Mb)
32: 32M
33: 32M (for 128Mb/512Mb)
51: 512M
52: 512M (for 512Mb/2Gb)
56: 256M
57: 256M (for 512Mb/2Gb)
59: 256M (for 128Mb/512Mb)
64: 64M
65: 64M (for 128Mb/512Mb)
1G: 1G
1K: 1G (for 2Gb)
6. # of Banks in Comp. & Interface
1: 4K/64mxRef., 4Banks & SSTL-2
2 : 8K/64ms Ref., 4Banks & SSTL-2
2: 4K/64ms Ref., 4Banks & LVTTL (SDR Only)
5: 8K/64ms Ref., 4Banks & LVTTL (SDR Only)
5: 4Banks & SSTL-1.8V
6: 8Banks & SSTL-1.8V
7. Bit Organization
0: x 4
3: x 8
4: x16
6: x 4 Stack (JEDEC Standard)
7: x 8 Stack (JEDEC Standard)
8: x 4 Stack
9: x 8 Stack
8. Generation
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
M: 1st Gen.
Q: 17th Gen.
9. Package
E: FBGA QDP (Lead-free & Halogen-free)
G: FBGA
H: FBGA (Lead-free & Halogen-free)
J: FBGA DDP (Lead-free)
M: FBGA DDP (Lead-free & Halogen-free)
N: sTSOP
Q: FBGA QDP (Lead-free)
T: TSOP II (400mil)
U: TSOP II (Lead-Free)
V: sTSOP II (Lead-Free)
Z: FBGA (Lead-free)
10. PCB Revision
0: Mother PCB
1: 1st Rev
2: 2nd Rev.
3: 3rd Rev.
4: 4th Rev.
A: Parity DIMM
S: Reduced PCB
U: Low Profile DIMM
11. Temp & Power
C: Commercial Temp. (0°C ~ 95°C) & Normal
Power
L: Commercial Temp. (0°C ~ 95°C) & Low Power
12. Speed
CC: (200MHz @ CL=3, tRCD=3, tRP=3)
D5: (266MHz @ CL=4, tRCD=4, tRP=4)
E6: (333MHz @ CL=5, tRCD=5, tRP=5)
F7: (400MHz @ CL=6, tRCD=6, tRP=6)
E7: (400MHz @ CL=5, tRCD=5, tRP=5)
F8: (533MHz @ CL=7, tRCD=7, tRP=7)
G8: (533MHz @ CL=8, tRCD=8, tRP=8)
H9: (667MHz @ CL=9, tRCD=9, tRP=9)
K0: (800MHz @ CL=10, tRCD=10, tRP=10)
7A: (133MHz CL=3/PC100 CL2)
13. AMB Vendor for FBDIMM
0, 5: Intel
1, 6, 8: IDT
9: Montage
Note: All Lead-free and Halogen-free products are in
compliance with RoHS
SAMSUNG Memory
DIMM
Data bits
DRAM Component Type
Depth
Number of Banks
Bit Organization
AMB Vendor
Speed
Temp & Power
PCB Revision
Package
Generation
samsung.com/dram
12 1H 2015
1. Memory Module: M
2. DIMM Type
3: R/LRDIMM
4: SODIMM
3. Data bits
74: x 72 260pin SODIMM
86: x 72 288pin Load Reduced DIMM
93: x 72 288pin Registered DIMM
4. DRAM Component Type
A: DDR4 SDRAM (1.2V VDD)
5. Depth
1G: 1G
2G: 2G
4G: 4G
8G: 8G
1K: 1G (for 8Gb)
2K: 2G (for 8Gb)
6. # of Banks in Comp. & Interface
4: 16Banks & POD-1.2V
7. Bit Organization
0: x 4
3: x 8
8. Component Revision
M: 1st Gen.
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
9. Package
B: FBGA (Halogen-free & Lead-free, Flip Chip)
M: FBGA (Halogen-free & Lead-free, DDP)
10. PCB Revision
0: None
1: 1st Rev.
2: 2nd Rev.
3: 3rd Rev.
4: 4th Rev.
11. Temp & Power
C: Commercial Temp. (0°C ~ 85°C) &
Normal Power
12. Speed
PB: DDR4-2133
(1066MHz @ CL=15, tRCD=15, tRP=15)
DDR4 SDRAM MODULE ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11 12
M X XX A XX X X X X X X XX
Memory Module
DIMM Type
Data bits
DRAM Component Type
Depth
# of Banks in Comp. & Interface
Bit Organization
Speed
Temp & Power
PCB Revision
Package
Component Revision
DDR4 SDRAM Module Ordering Information
samsung.com/dram 13
DRAM
1H 2015
1. Samsung Memory: K
2. DRAM: 4
3. DRAM Type
A: DDR4 SDRAM
4. Density
4G: 4Gb
8G: 8Gb
5. Bit Organization
04: x 4
08: x 8
6. # of Internal Banks
5: 16Banks
7. Interface (Vdd, Vddq)
W: POD (1.2V, 1.2V)
8. Revision
M: 1st Gen.
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
H: 9th Gen.
9. Package Type
B: FBGA (Halogen-free & Lead-free, Flip Chip)
M: FBGA (Halogen-free & Lead-free, DDP)
10. Temp & Power
C: Commercial Temp. (0°C ~ 85°C) &
Normal Power
11. Speed
PB: DDR4-2133
(1066MHz @ CL=15, tRCD=15, tRP=15)
RC: DDR4-2400
(1200MHz @ CL=17, tRCD=17, tRP=17)
DDR4 SDRAM MEMORY ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11
K 4 A XX XX X X X X X XX
Samsung Memory
DRAM
DRAM Type
Density
Bit Organization
Speed
Temp & Power
Package Type
Revision
Interface (Vdd, Vddq)
#of Internal Banks
DDR4 SDRAM Memory Ordering Information
samsung.com/flash
14 1H 2015Mainstream eMMC & High-Performance eMMC
MAINSTREAM eMMC
Density Flash MMC* Part Number Seq R/W Perf (MB/s) Random R/W IOPS Package Size (mm) Status
8GB 64Gb*1 5 KLM8G1WEPD-B0310** 140/8 5000/600 11.5 x 13.0 x 0.8 MP
16GB 64Gb*2 5 KLMAG2WEPD-B0310** 150/12 5000/1200 11.5 x 13.0 x 0.8 MP
32GB 64Gb*4 5 KLMBG4WEBD-B0310** 260/45 5500/6000 11.5 x 13.0 x 1.0 MP
64GB 64Gb*8 5 KLMCG8WEBD-B0310** 260/45 5500/6000 11.5 x 13.0 x 1.0 MP
128GB 64Gb*16 5 KLMDGAWEBD-B0310** 250/45 5300/5000 11.5 x 13.0 x 1.4 MP
*MMC5.0 is backwards compatible with 4.51 & 4.4
HIGH-PERFORMANCE eMMC
Density Flash MMC* Part Number Seq R/W Perf (MB/s) Random R/W IOPS Package Size (mm) Status
4GB 32Gb*1 5 KLM4G1FEPD-B0310** 120/20 3000/700 11.0 x 10.0 x 0.8 MP
8GB 64Gb*1 5 KLM8G1GEND-B0310** 160/25 5000/2500 11.5 x 13.0 x 1.0 MP
16GB 64Gb*2 5 KLMAG2GEND-B0310** 230/50 6000/6000 11.5 x 13.0 x 1.0 MP
32GB 64Gb*4 5 KLMBG4GEND-B0310** 250/100 6000/12000 11.5 x 13.0 x 1.0 MP
64GB 64Gb*8 5 KLMCG8GEND-B0310** 250/100 6000/12000 11.5 x 13.0 x 1.0 MP
*MMC5.0 is backwards compatible with 4.51 & 4.41 ***Denotes bucket code for latest firmware patch
Specications
• Density: 4GB to 128GB
• Flash: 32Gb/64Gb
• Package Type: FBGA
• Package Size: 11x10mm, 11.5x13mm
• eMMC: 4.5/5.0
Simple Block Diagram
LTE
Modem
uSD
Slot
AP +
DRAM
(POP)
Samsung
eMMC
Industry-Leading Smartphone and Tablet Design
• Industry’s fastest eMMC
• Fully-managed NAND
• Low active and standby power
• High density in small form factor
(11.5x13mm pkg)
• 4GB to 128GB capacities
• JEDEC standard MMC 5.0
• Leading edge 10nm-class NAND Flash
Performance Specs
32GB, 64GB eMMC 4.5 eMMC 5.0
Interface Speed 200MB/s 400MB/s
Random R/W 3500/2000 IOPS 6000/12000 IOPS
Sequential R/W 150/50 MB/s 250/100 MB/s
* Device performance condition: x8 Bus, Cache-On mode, without host overhead.
eMMC Key Features
Applications
eMMC is the most optmized flash solution for tablets and
smartphones, as well as applications from eReaders, HD cameras
and smart TVs to PNDs, multi-media players and gaming devices.
New 10nm-class eMMC
samsung.com/flash 15
FLASH - SSD
1H 2015 Solid State Drives
SOLID STATE DRIVES (SSD)
Drive Type Drive
Name Interface Form Factor Connector Power-loss
Protection
Write
Endurance Density Part Number
Client PC/
Embedded
CM851 SATA III - 6Gb/s
M.2 22x42 mm M.2
No PC Workload
16GB MZAPF016HCDD-00000
32GB
MZAPF032HCFV-00000
mSATA Mini PCIe
MZMPF032HCFV-00000
64GB MZMPF064HCGM-00000
PM871 SATA III - 6Gb/s
M.2 22x80 mm M.2
No PC Workload
128GB MZNLN128HCGR-00000
256GB MZNLN256HCHP-00000
512GB MZNLN512HCJH-00000
2.5" 7mmT SFF-8223
128GB MZ7LN128HCHP-00000
256GB MZ7LN256HCHP-00000
512GB MZ7LN512HCHP-00000
SM951
PCIe Gen 3
- SATAe
M.2 22x80 mm M.2 No PC Workload
128GB MZHPV128HDGM-00000
256GB MZHPV256HDGL-00000
512GB MZHPV512HDGL-00000
PCIe Gen 3
- NVMe
128GB MZVPV128HDGM-00000
256GB MZVPV256HDGL-00000
512GB MZVPV512HDGL-00000
Data Center
PM863 SATA III - 6Gb/s 2.5" 7mmT SFF-8223 Yes 0.8 DWPD
120GB MZ7LM120HCFD-00003
240GB MZ7LM240HCGR-00003
480GB MZ7LM480HCHP-00003
960GB MZ7LM960HCHP-00003
1920GB MZ7LM1T9HCJM-00003
3840GB MZ7LM3T8HCJM-00003
SM843Tn SATA III - 6Gb/s 2.5" 7mmT SFF-8223 Yes 1.8 DWPD
120GB MZ7WD120HCFV-00003
240GB MZ7WD240HCFV-00003
480GB MZ7WD480HCGM-00003
SV843 SATA III - 6Gb/s 2.5" 7mmT SFF-8223 Yes 3.6 DWPD
480GB MZ7WD480HMHP-00003
960GB MZ7WD960HMHP-00003
Enterprise
PM1633 SAS 3.0 -
12 Gb/s 2.5" 15mmT SFF-8680 Yes 1.0 DWPD
480GB MZILS480HCGR-00003
960GB MZILS960HCHP-00003
1920GB MZILS1T9HCHP-00003
SM1635 SAS 3.0 -
12 Gb/s 2.5" 15mmT SFF-8680 Yes 10 DWPD
3840GB MZILS3T8HCJM-00003
400GB MZIES400HMGR-00003
800GB MZIES800HMHP-00003
1600GB MZIES1T6HMJH-00003
SM1715 PCIe Gen 3
- NVMe
2.5" 15mmT SFF-8639 Yes 10 DWPD
800GB MZWKI800HMHP-00003
1600GB MZWKI1T6HMHP-00003
3200GB MZWKI3T2HMJM-00003
Half-Height Half-Length
Add-In Card (HHHL AIC)
PCIe
Edge-Connector Yes 10 DWPD
1600GB MZPKI1T6HMHP-00003
3200GB MZPKI3T2HMJM-00003
samsung.com/mcp
16 1H 2015Multi-Chip Packages
Samsung has a portfolio of eMCP products for a variety of devices, such as mobile
phones and tablets. The following illustration shows Samsung’s lineup of eMCP
memory solutions, which can be deployed in almost any application.
eMCP = eMMC + LPDDR3
Samsung eMCP product suite with dierent densities and types
of Mobile DRAM and eMMC
4G 6G 8G 12G 16G 24G
64GB
32GB
8GB
4GB
2GB
16GB
ROM
RAM
MCPs
samsung.com/mcp 17
1H 2015 Multi-Chip Packages
eMCP: eMMC + LPDDR3
Memory eMMC Density DRAM Density/Organization Voltage (eMMC-DRAM) Package
eMMC & MDRAM
4GB 4Gb (x 32) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
8GB
4Gb*2 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
6Gb*2 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
16GB
6Gb*2 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
4Gb*4 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
6Gb*4 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
32GB
4Gb*4 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
6Gb*4 (x 32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
18 samsung.com/flash-ssd
1H 2015Solid State Drives
Samsung Solid State Drives
Which SSD is right for you?
For more information, email: SSD@ssi.samsung.com
Client Data Center Enterprise
SATA PCIe SATA SAS PCIe
Mainstream Extreme
Performance
STANDARD
DATA
CENTER SERIES
Read-
Intensive
Environments
DELUXE
ENTERPRISE
SERIES
High-Write
Environments
ENTERPRISE
STORAGE
SERIES
High
Redundancy
Environments
EXTREME
PERFORMANCE
SERIES
Data Cache
Environments
Samsung PM871 Samsung SM951 Samsung PM863 Samsung SV843 Samsung PM1633 Samsung SM1715
Form Factor 2.5", M.2 M.2 2.5" 2.5" 2.5" 2.5" and HHHL
Capacity (GB) 128/256/512 128/256/512
120/240/480/
960/1920/
3840
480/960 480/960/
1920/3840
800/1600/
3200
Host Interface Serial ATA 3
(6 Gb/s) PCIe Gen3 x4 Serial ATA 3
(6 Gb/s)
Serial ATA 3
(6 Gb/s)
SAS 3
(12 Gb/s) PCIe Gen3 x4
MTBF 1.5 Million Hours 1.5 Million Hours 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours
Uncorrectable Bit Error
Rate (UBER) 1 in 1015 1 in 1015 1 in 1017 1 in 1017 1 in 1017 1 in 1017
Power Consumption
(Active) 250mW 6.5W 4.0W 2.9W 11.0W 25.0W
Power Consumption (Idle) 50mW 50mW 1.3W 1.0W 4.0W 10.0W
Random Reads (up to) 97,000 IOPS 90,000 IOPS 99,000 IOPS 88,000 IOPS 180,000 IOPS 750,000 IOPS
Random Writes (up to) 90,000 IOPS 70,000 IOPS 18,000 IOPS 14,000 IOPS 15,000 IOPS 185,000 IOPS
Sequential Reads (up to) 540 MB/s 2,150MB/s 540 MB/s 530 MB/s 1,100 MB/s 3,000 MB/s
Sequential Writes (up to) 510 MB/s 1,500 MB/s 480 MB/s 480 MB/s 1,000 MB/s 2,200 MB/s
Endurance (up to) Client workload Client workload 0.8 DWPD 3.6 DWPD 1 DWPD 10 DWPD
Physical Dimensions
100 x 70 x 7mm
(2.5")
80 x 22 x 3.7mm
(M.2)
80 x 22 x 3.7mm 100 x 70 x 7mm 100 x 70 x 7mm 100 x 70 x 15mm
100 x 70 x 15mm
(2.5")
168 x 70 x 19mm
(HHHL)
Weight 54g (2.5"),
8.5g (M.2) 10g 60g 62g 140g 210g
19
STORAGE
samsung.com/flash-ssd 1H 2015 Solid State Drives
SOLID STATE DRIVES (SSD)
Drive Type Drive
Name Interface Form Factor Connector Power-loss
Protection
Write
Endurance Density Part Number
Client PC/
Embedded
CM851 SATA III - 6Gb/s
M.2 22 x 42 mm M.2
No PC Workload
16GB MZAPF016HCDD-00000
32GB
MZAPF032HCFV-00000
mSATA Mini PCIe
MZMPF032HCFV-00000
64GB MZMPF064HCGM-00000
PM871 SATA III - 6Gb/s
M.2 22 x 80 mm M.2
No PC Workload
128GB MZNLN128HCGR-00000
256GB MZNLN256HCHP-00000
512GB MZNLN512HCJH-00000
2.5" 7mmT SFF-8223
128GB MZ7LN128HCHP-00000
256GB MZ7LN256HCHP-00000
512GB MZ7LN512HCHP-00000
SM951
PCIe Gen 3
- SATAe
M.2 22 x 80 mm M.2 No PC Workload
128GB MZHPV128HDGM-00000
256GB MZHPV256HDGL-00000
512GB MZHPV512HDGL-00000
PCIe Gen 3
- NVMe
128GB MZVPV128HDGM-00000
256GB MZVPV256HDGL-00000
512GB MZVPV512HDGL-00000
Data Center
PM863 SATA III - 6Gb/s 2.5" 7mmT SFF-8223 Yes 0.8 DWPD
120GB MZ7LM120HCFD-00003
240GB MZ7LM240HCGR-00003
480GB MZ7LM480HCHP-00003
960GB MZ7LM960HCHP-00003
1920GB MZ7LM1T9HCJM-00003
3840GB MZ7LM3T8HCJM-00003
SM843Tn SATA III - 6Gb/s 2.5" 7mmT SFF-8223 Yes 1.8 DWPD
120GB MZ7WD120HCFV-00003
240GB MZ7WD240HCFV-00003
480GB MZ7WD480HCGM-00003
SV843 SATA III - 6Gb/s 2.5" 7mmT SFF-8223 Yes 3.6 DWPD
480GB MZ7WD480HMHP-00003
960GB MZ7WD960HMHP-00003
Enterprise
PM1633 SAS 3.0 -
12 Gb/s 2.5" 15mmT SFF-8680 Yes 1.0 DWPD
480GB MZILS480HCGR-00003
960GB MZILS960HCHP-00003
1920GB MZILS1T9HCHP-00003
3840GB MZILS3T8HCJM-00003
SM1635 SAS 3.0 -
12 Gb/s 2.5" 15mmT SFF-8680 Yes 10 DWPD
400GB MZIES400HMGR-00003
800GB MZIES800HMHP-00003
1600GB MZIES1T6HMJH-00003
SM1715 PCIe Gen 3
- NVMe
2.5" 15mmT SFF-8639 Yes 10 DWPD
800GB MZWKI800HMHP-00003
1600GB MZWKI1T6HMHP-00003
3200GB MZWKI3T2HMJM-00003
Half-Height Half-Length
Add-In Card (HHHL AIC)
PCIe
Edge-Connector Yes 10 DWPD
1600GB MZPKI1T6HMHP-00003
3200GB MZPKI3T2HMJM-00003
20 samsung.com/flash-ssd
1H 2015Optical Disc Drives
Blu-ray Writer SLIM EXTERNAL
Interface Speed Type Loading Model
USB 2.0 BD Writer 6X Slim Tray SE-506CB
DVD-W H/H
Interface Speed Type Loading Model
SATA DVD Write 24X H/H Tray SH-224FB
DVD-W SLIM
Interface Speed Type Loading Model
SATA DVD Write 8X Slim Tray SN-208FB
DVD-W SLIM EXTERNAL
Interface Speed Type Loading Model
USB 2.0 DVD Write 8X
Ultra Slim
Tray
SE-218GN
Slim SE-208GB
tsstodd.com
DISPLAYS
samsungdisplay.com 21
1H 2015 DID Panel Lineup, Tablets & Monitors
Public Information Display (PID) Product Classication
Why PID instead of TV?
COMMERCIAL (PID) CONSUMER (TV)
WARRANTY 18 months to 2 years 90 days to 1 year
RELIABILITY
Public environments
20+ hours daily duty cycle
Variety of temperatures & location
5-8 hour daily duty cycle
Designed for in-home use in controlled environment
In-home living room
PRODUCTION LIFECYCLE 24-36 months 12-15 months
PICTURE QUALITY
Designed to resist image retention
LCD backlight covers a wider color spectrum necessary for
PC source integration, giving better picture quality
AGAR coating for public viewing
120Hz / 240Hz for full-motion video
Designed for TV signals
Gloss surface treatment
LOCATION Most models portrait capable Can only be oriented in landscape mode
Product Segmentation
Type Class Warranty Bezel Suggested
Run Time Brightness Usage Applications Value Tier
UNB / SNB Ultra / Super Narrow Bezel 2 years 3.9mm - 5.9mm
A-to-A 20+ hours 500-700 nits Heavy Video Walls Premium commercial range
Indoor PID Indoor Commercial Panels 2 years Narrow 20+ hours 600/700 nits Medium Semi-Outdoor Mid-price range
E-Board Value, Large Format 18 months Normal 12 hours 450 nits Daily Indoor, e-Board High-value commercial range
Outdoor PID High Bright, Wide Temp 2 years Normal 20+ hours 2500-5000 nits Heavy Outdoor Premium commercial range
Super Narrow Bezel (SNB)/
Ultra Narrow Bezel (UNB) » UNB: 3.9mm A-to-A» SNB: 5.9mm A-to-A» Video Wall
» Narrow Bezel
Indoor PID » 700 nits Brightness» 40"/46"/55"/75"
» Landscape Orientation
E-Board PID » AGAR Surface Treatment» 55"/70"/82" Edge LED
» High Brightness
Outdoor PID » 110°C Clearing Point» Full High Definition
Product Segmentation
HEAVY USE
LIGHT USE
SNB / UNB Professional Indoor Events Billboard
• Control Room
• Simulation
• Scoreboard
• Sports Broadcasting
• Dynamic Signage
Indoor PID Entertainment Transportation Communication
• Casino
• Theatre
• Menu
• Airport
• Train/Bus Station
• Conference Room
E-Board PID Commercial Education Hospitality
• Kiosk
• Conference Systems
• Interactive FPD • Hotel Signage
Outdoor PID Commercial Education Hospitality
• Kiosk
• Conference Systems
• Interactive FPD • Hotel Signage
samsungdisplay.com
22 1H 2015DID Panel Lineup, Tablets & Monitors
SAMSUNG DIGITAL INFORMATION DISPLAY (DID) PANEL LINEUP
Category Model Size Model
Resolution Bezel Backlight Brightness
(typical)
Contrast
Ratio
Response
Time Frequency MP* Comment
SNB / UNB
LTI460HN01 46" FHD Super narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 5.9mm Active to Active, LED
LTI460HN09 46" FHD Super narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 5.9mm Active to Active, LED
LTI460HN10 46" FHD Ultra narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED
LTI460HN11 46" FHD Ultra narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED
LTI550HN01 55" FHD Super narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 5.9mm Active to Active, LED
LTI550HN08 55" FHD Super narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 5.7mm Active to Active, LED
LTI550HN09 55" FHD Ultra narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED
LTI550HN11-V 55" FHD Ultra narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED
Indoor PID
LTI400HA10 40" FHD Narrow eLED 700 nits 3,000:1 8ms 60Hz Now eLED
LTI460HN08 46" FHD Narrow eLED 700 nits 4,000:1 8ms 60Hz Now eLED
LTI550HN06 55" FHD Narrow eLED 700 nits 4,000:1 8ms 60Hz Now eLED
LTI550HN07 55" FHD Narrow eLED 450 nits 4,000:1 8ms 60Hz Now E-Board; Landscape/Portrait
LTI750HF02-0 75" FHD Normal D-LED 400 nits 3,500:1 8ms 120Hz Now Landscape / Portrait
LTI750FJ01 75" UHD Normal D-LED 500 nits 5,000:1 8ms 120Hz Now Landscape / Portrait
E-Board
LTI700HA02 70" FHD Normal eLED 400 nits 4,000:1 8ms 60Hz Now E-Board; Landscape/Portrait
LTI820HA01 82" FHD Normal eLED 450 nits 3,000:1 8ms 60Hz Now E-Board; Landscape mode only
Outdoor
LTI460HZ01 46" FHD Narrow D-LED 5,000 nits 4,000:1 8ms 60Hz Now High Bright, Hi Temp LC,
1/4λ Pol.
LTI460HF01-V 46" FHD Narrow D-LED 2,500 nits 3,000:1 8ms 120Hz Now High Bright, Hi Temp LC,
1/4λ Pol.
LTH550HF04-V 55" FHD Narrow D-LED 2,500 nits 3,000:1 8ms 120Hz Now High Bright, Hi Temp LC,
1/4λ Pol.
LTI750HF01-V 75" FHD Narrow D-LED 3,500 nits 3,000:1 8ms 120Hz Now High Bright, Hi Temp LC,
1/4λ Pol.
TABLETS
Size PN Mode Resolution H(RGB) V Aspect
Ratio PPI Brightness
(nits) MP
7" LTL070NL01 PLS WSVGA 1024 600 16:09 170 400 Now
8.0" Open Cell LTL080AL01 PLS WXGA 1280 800 16:09 189 Open Cell Now
10.1" LTL101AL06 PLS WXGA 1280 800 16:10 149 400 Now
10.1" LTL101DL03 PLS WQXGA 2560 1600 16:10 300 370 Now
MONITORS
Size PN Mode Resolution H(RGB) V Aspect
Ratio PPI Brightness
(nits) MP
23" LTM230HL07 PLS FHD 1920 1080 16:09 96 300 Now
23.6" LTM236FL01 PLS UHD 3840 2160 16:09 193 300 Now
27"
LTM270HT10 TN FHD 1920 1080 16:09 82 300 Now
LTM270DL02 PLS QHD 2560 1440 16:09 109 300 Now
LTM270HL02 PLS FHD 1920 1080 16:09 82 350 Now
LTM270FL01 PLS UHD 3840 2160 16:09 164 350 Now
31.5" LTM315FL01 PLS UHD 3840 2160 16:09 140 350 Now
LTM315FL02 PLS UHD 3840 2160 16:09 140 350 Now
23
CONTACTS
1H 2015
samsung.com/semiconductor/sales-network
Adelsa | www.adetronics.com.mx
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
MEXICO
Hacienda Corralejo #80
Bosque de Echegaray
Naucalpan, Mexico 53310
52-555-560-5002
GUADALAJARA OFFICE 52-333-122-3054
MONTERREY OFFICE 52-818-214-0011
CD. JUAREZ OFFICE 52-656-613-3517
REYNOSA OFFICE 52-899-922-5540
ATMI Sales | www.atmisales.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
OREGON
4900 S.W. Griffith Drive
Suite 253
Beaverton, OR 97005
1-800-898-2446
503-643-8307
503-643-4364
503-643-4364
WASHINGTON
8581 154th Avenue NE
Redmond WA 98052
425-869-7636 425-869-9841
Bear VAI Technology | www.bearvai.com
PRODUCTS ADRRESS MAIN PHONE FAX
Memory
SLSI
LCD
MAIN OFFICE - BRECKSVILLE, OHIO
6910 Treeline Drive
Unit H
Brecksville, OH 44141
440-526-1991 440-526-5426
MAIN OFFICE - INDIANA
11451 Overlook Drive
Fishers, IN 46037
440-832-7637 317-845-8650
SOUTHERN OHIO/PITTSBURGH/KENTUCKY/MICHIGAN OFFICES 440-526-1991 440-526-5426
Core Sales, Inc. | www.coresales.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
901 Warrenville Road
Suite 211
Lisle, IL 60532
847-843-8888
Crestone Technology Group | www.crestonegroup.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
COLORADO
7108 S. Alton Way
Building L
Centennial, CO 80112
303-280-7202 720-482-2220
UTAH OFFICE
Contacts
Feel free to contact your local distributor or sales representative with any Samsung sales inquiries.
Contacts
samsung.com/semiconductor/sales-network
24 1H 2015Contacts
Customer 1st | www.customer1st.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
MINNESOTA
2950 Metro Drive
Suite 101
Bloomington, MN 55425
952-851-7909 952-851-7907
KANSAS
2111 E. Crossroad Lane
#202
Olathe, KS 66062
InTELaTECH | www.intelatech.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
ONTARIO - CANADA
5225 Orbitor Drive
Suite 2
905-629-0082 905-624-6909
905-629-1795
905-629-8910
21 Concourse Gate
Suite 12
Ottawa, ONT K2E 7S4
905-629-0082 613-221-9160
ALBERTA - CANADA
14939 Mt. McKenzie Drive SE
Calgary, Alberta T2Z 2M6
905-629-0082 403-686-6926
QUEBEC - CANADA
620 St-Jean Boulevard
Suite 202
Pointe Claire Quebec H9R 3K2
905-629-0082 905-629-0082
BRITISH COLUMBIA - CANADA
5811 Cooney Road
Suite 305, South Tower
Vancouver, BC V5X 3M1
905-629-0082 905-629-1795
I-Squared Incorporated | www.isquared.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
2635 N. 1st Street
Suite 128
San Jose, CA 95134
408-988-3400 408-988-2079
1250 B Street
Petaluma, CA 94952
Neptune Electronics (necco) | www.neccoelect.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
11 Oval Drive
Suite 169
Islandia, NY 11749
631-234-2525 631-234-2707
New Elpis, Inc. | www.newelpis.com
PRODUCTS ADDRESS MAIN PHONE FAX
LCD 165 Dundas Street, W
Suite 702
Mississauga, ON
Canada L5B 2N6
905-275-3516 905-275-4109
25
CONTACTS
1H 2015
samsung.com/semiconductor/sales-network Contacts
New Tech Solutions
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
26 Ray Avenue
Burlington, MA 01803
781-229-8888 781-229-1614
Rep One Associates, Inc. | www.repone.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
ALABAMA
303 Williams Avenue
Suite 1011
Huntsville, AL 35801
256-539-7371 256-533-4509
GEORGIA
3000 Langford Road
Bldg 300
Norcross, GA 30071
770-209-9242
678-591-6753
770-209-9245
NORTH CAROLINA
5540 Centerview Drive
Suite 200
Raleigh, NC 27606
704-846-5744 919-424-3866
10800 Sikes Place
Suite 300
Charlotte, NC 28277
704-846-5744 704-846-25
FLORIDA
128 Ledbury Drive
Longwood, FL 32779
Tech Coast Sales | www.tc-sales.com
PRODUCTS ADDRESS MAIN PHONE EMAIL
Memory
SLSI
LCD
MAIN OFFICE
23121 Verdugo Drive
Suite 101
Laguna Hills, CA 92653
949-305-6869 sales@tc-sales.com
West Associates | www.westassociates.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory
SLSI
LCD
AUSTIN / SAN ANTONIO
4100 Duval Road
Building 1, Suite 102
Austin, TX 78759
512-343-1199 512-343-1922
DALLAS / OKLAHOMA / ARKANSAS
2745 Dallas Parkway
Suite 460
Plano, TX 75093
972-680-2800 972-699-0330
HOUSTON / VALLEY / LOUISIANA
24624 Interstate 45 North
Suite 200
Spring, TX 77386
512-343-1199 512-343-1922
For all product information please visit:
samsung.com/us/oem-solutions
To access our online sales portal, visit: https://smarttools.ssi.samsung.com
26 1H 2015 samsung.com/semiconductor/sales-network
Notes
27
1H 2015
samsung.com/semiconductor/sales-network
Notes
Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible
errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specications
with the intent to improve function or design at any time and without notice and is not required to update this documentation to reect such changes. This publication does not convey to
a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specically disclaims any and all
liability, including without limitation any consequential or incidental damages.
Copyright 2014. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. Ultrabooks is a trademark of Intel Corporation. All other names and
brands may be claimed as the property of others. The appearance of all products, dates, gures, diagrams and tables are subject to change at any time, without notice.
BR-15-ALL-001 | Printed 4/15
Samsung Semiconductor, Inc.
601 McCarthy Boulevard
Milpitas, CA 95035
samsung.com/us/oem-solutions