PZTA42T1G, SPZTA42T1G High Voltage Transistor Surface Mount NPN Silicon http://onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT Compliant* MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Vdc SOT-223 CASE 318E STYLE 1 Vdc COLLECTOR 2, 4 Unit Collector-Emitter Voltage (Open Base) VCEO Collector-Base Voltage (Open Emitter) VCBO Emitter-Base Voltage (Open Collector) VEBO Collector Current (DC) IC Total Power Dissipation @ TA = 25C (Note 1) PD Storage Temperature Range Tstg -65 to 150 C Junction Temperature TJ 150 C 300 300 BASE 1 Vdc 6.0 500 mAdc EMITTER 3 W 1.5 MARKING DIAGRAM AYW P1D G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient (Note 1) Symbol RqJA Max Unit 1 C/W 83.3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. P1D A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 9 1 Package Shipping PZTA42T1G SOT-223 (Pb-Free) 1,000 / Tape & Reel SPZTA42T1G SOT-223 (Pb-Free) 1,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: PZTA42T1/D PZTA42T1G, SPZTA42T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Max 300 - 300 - 6.0 - - 0.1 - 0.1 25 40 40 - - - 50 - - 3.0 - 0.5 - 0.9 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO Emitter-Base Cutoff Current (VBE = 6.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE - DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Feedback Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Cre Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) MHz pF Vdc Vdc 2. Pulse Test Conditions, tp = 300 ms, d 0.02. 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125C 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 100 PZTA42T1G, SPZTA42T1G 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) 1000 Figure 2. Capacitance 1.4 V, VOLTAGE (V) 1.2 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125C, IC/IB = 10 0.6 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 100 1 IC, COLLECTOR CURRENT (A) f T, CURRENT-GAIN -- BANDWIDTH (MHz) Figure 3. "ON" Voltages 10 0.1 1 10 1.0 s 0.01 0.001 100 10 ms 0.1 1 IC, COLLECTOR CURRENT (mA) 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 5. Safe Operating Area Figure 4. Current Gain Bandwidth Product http://onsemi.com 3 1000 PZTA42T1G, SPZTA42T1G PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E q L STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 --- --- 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 --- 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 --- 0.078 0.287 10 BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 mm inches 1.5 SCALE 6:1 0.059 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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